Abstract: Provided is a ceramic sintered body having high wear resistance and chipping resistance. Also provided are an insert, a cutting tool and a friction stir welding tool, each of which uses such a high-performance ceramic sintered body. The ceramic sintered body includes Al2O3 (alumina), WC (tungsten carbide) and ZrO2 (zirconia), wherein Zr (zirconium) element is present at either one or both of: (1) a grain boundary between crystal grains of the Al2O3; and (2) a grain boundary of crystal grains of the Al2O and crystal grains of the WC, wherein the ceramic sintered body contains 55.0 to 97.5 vol % of the WC, 0.1 to 18.0 vol % of the ZrO2, and the balance being the Al2O3, and wherein the ZrO2 is in a phase of tetragonal structure (T) or a mixed phase of tetragonal structure (T) and monoclinic structure (M).

Abstract: Provided is a ceramic sintered body having high wear resistance and chipping resistance. Also provided are an insert, a cutting tool and a friction stir welding tool, each of which uses such a high-performance ceramic sintered body. The ceramic sintered body includes Al2O3 (alumina), WC (tungsten carbide) and ZrO2 (zirconia), wherein Zr (zirconium) element is present at either one or both of: (1) a grain boundary between crystal grains of the Al2O3; and (2) a grain boundary of crystal grains of the Al2O and crystal grains of the WC, wherein the ceramic sintered body contains 55.0 to 97.5 vol % of the WC, 0.1 to 18.0 vol % of the ZrO2, and the balance being the Al2O3, and wherein the ZrO2 is in a phase of tetragonal structure (T) or a mixed phase of tetragonal structure (T) and monoclinic structure (M).

Abstract: An electrical characteristic measuring substrate includes a plurality of laminated dielectric layers, front-surface coplanar lines disposed at a front surface of the substrate, back-surface coplanar electrodes disposed at a back surface thereof, and interlayer ground electrodes disposed between dielectric layers. First ends of the front-surface coplanar lines define a front-surface component mounting electrode, and first ends of the back-surface coplanar lines define a back-surface component mounting electrode. The front-surface component mounting electrode and the back-surface component mounting electrode have substantially the same pattern when viewed from the direction perpendicular to the front surface. Each of the front-surface component mounting electrode and the back-surface component mounting electrode has an electrode pattern asymmetric about a substantially central line of the front surface or about that of the back surface.

Abstract: A substrate including a sensor unit, wherein the sensor unit includes a coil wound at least once arranged on the surface of the sensor or embedded within and near the surface thereof. With such an arrangement, an electric current that corresponds to information with respect to the substrate (e.g., the temperature of the substrate or the amount of charge stored in the substrate) flows through the coil.

Abstract: A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance.

Abstract: An electrostatic chuck has a structure in which a heater is sandwiched between a base member and an electrostatic chuck substrate, the heater being bonded to the base member with an adhesive layer interposing therebetween. The adhesive layer interposing between the heater and the base member has a structure in which a first adhesive layer and a second adhesive layer are stacked, the first adhesive layer being formed by curing an adhesive having high thermal conductivity, the second adhesive layer being formed as gel by curing an adhesive having lower viscosity than the adhesive of the first adhesive layer. Preferably, the first and second adhesive layers are both made of a silicone-based resin.

Abstract: An electrostatic chuck includes a dielectric layer 30 formed with an attraction and fix face onto which a plate member 10 is attracted and fixed, wherein the attraction and fix face of the dielectric layer 30 is formed with a plurality of projection parts 32 each with only a tip face abutting the plate member 10 formed as a flat face by grinding and formed with a coolant gas flow path 36 where a coolant gas flows is opened to the flat face of each of the projection parts 32.

Abstract: An electrical characteristic measuring substrate includes a plurality of laminated dielectric layers, front-surface coplanar lines disposed at a front surface of the substrate, back-surface coplanar electrodes disposed at a back surface thereof, and interlayer ground electrodes disposed between dielectric layers. First ends of the front-surface coplanar lines define a front-surface component mounting electrode, and first ends of the back-surface coplanar lines define a back-surface component mounting electrode. The front-surface component mounting electrode and the back-surface component mounting electrode have substantially the same pattern when viewed from the direction perpendicular to the front surface. Each of the front-surface component mounting electrode and the back-surface component mounting electrode has an electrode pattern asymmetric about a substantially central line of the front surface or about that of the back surface.

Abstract: An electrostatic chuck has a structure in which a heater is sandwiched between a base member and an electrostatic chuck substrate, the heater being bonded to the base member with an adhesive layer interposing therebetween. The adhesive layer interposing between the heater and the base member has a structure in which a first adhesive layer and a second adhesive layer are stacked, the first adhesive layer being formed by curing an adhesive having high thermal conductivity, the second adhesive layer being formed as gel by curing an adhesive having lower viscosity than the adhesive of the first adhesive layer. Preferably, the first and second adhesive layers are both made of a silicone-based resin.

Abstract: In a duplexer, a transmission elastic wave filter and a reception elastic wave filter are mounted on a laminated substrate, a coil connected between an antenna terminal and a ground potential is provided on the laminated substrate, the reception elastic wave filter has first and second ground pads connected to ground potentials of IDTs connected to first and second balanced terminals, the distance between the second ground pad and the coil is greater than the distance between the first ground pad and the coil, and an inductance component in a conductive path E connecting the second ground pad to the second ground terminal is less than an inductance component in a conductive path D connecting the first ground pad to the first ground terminal, so as to improve isolation characteristics between first and second balanced terminals of a reception filter chip.

Abstract: An electrostatic chuck includes a dielectric layer 30 formed with an attraction and fix face onto which a plate member 10 is attracted and fixed, wherein the attraction and fix face of the dielectric layer 30 is formed with a plurality of projection parts 32 each with only a tip face abutting the plate member 10 formed as a flat face by grinding and formed with a coolant gas flow path 36 where a coolant gas flows is opened to the flat face of each of the projection parts 32.

Abstract: A substrate including a sensor unit, wherein the sensor unit includes a coil wound at least once arranged on the surface of the sensor or embedded within and near the surface thereof. With such an arrangement, an electric current that corresponds to information with respect to the substrate flows through the coil.

Abstract: In a duplexer, a transmission elastic wave filter and a reception elastic wave filter are mounted on a laminated substrate, a coil connected between an antenna terminal and a ground potential is provided on the laminated substrate, the reception elastic wave filter has first and second ground pads connected to ground potentials of IDTs connected to first and second balanced terminals, the distance between the second ground pad and the coil is greater than the distance between the first ground pad and the coil, and an inductance component in a conductive path E connecting the second ground pad to the second ground terminal is less than an inductance component in a conductive path D connecting the first ground pad to the first ground terminal, so as to improve isolation characteristics between first and second balanced terminals of a reception filter chip.

Abstract: A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance.

Abstract: A substrate temperature adjusting-fixing device 10 includes an electrostatic chuck 11 which is provided with a base body 21 having a substrate placement surface 21A for placing s substrate 20 thereon, an electrostatic electrode 22 embedded in the base body 21, and a resistance heater 23 embedded in the base body 21 to heat the substrate 20; and a base plate 12 which is provided with a cooling mechanism 46 for cooling the electrostatic chuck 11 and supports the electrostatic chuck 11, in which a heat insulation portion 47 is provided in a base plate body 45 at a portion located between the cooling mechanism 46 and the electrostatic chuck 11.

Abstract: An electrostatic chuck of the invention includes a base portion; a heat insulating layer bonded onto the base portion; and a chuck function portion bonded on the heat insulating layer and composed by providing a heater electrode and an electrostatic chuck (ESC) electrode in a ceramic substrate portion. Adhesive layers are respectively provided on the both surface sides of the heat insulating layer. In the case where the base portion and the chuck function portion are bonded together with high adhesion strength, openings are formed in the heat insulating layer and are filled with the adhesive layers.

Abstract: In fabrication of a semiconductor device which is provided with resistances and MOS transistors on the same substrate, conduction failures of contacts and leaching of wiring metal into a silicon substrate is prevented. Firstly, an underlying structure is prepared. Then, a silicon oxide layer is formed on the underlying structure. Then, a silicon nitride layer is formed on the silicon oxide layer. Then, an inter-layer insulation layer is formed on the silicon nitride layer. Then, a contact hole is formed penetrating through a laminate of the silicon oxide layer, the silicon nitride layer and the inter-layer insulation layer. A thickness of the silicon oxide layer is a value in a range from 32 nm to 48 nm.

Abstract: A substrate heating device includes a ceramic plate on which a substrate is loaded, and first resistance heating bodies built in the ceramic plate, whereby the first resistance heating bodies are arranged on a same planar surface in substantially parallel with a substrate loading surface of the ceramic plate such that adjacent first resistance heating bodies are separated mutually and the first resistance heating bodies are constructed such that a temperature is controlled independently respectively, and also includes second resistance heating bodies built in the ceramic plate to heat portions of the ceramic plate positioned between the first resistance heating bodies.

Abstract: An electrostatic chuck 15 for chucking and supporting a work 20 made of an electrical insulating material includes a chuck body having a positive electrode 12a and a negative electrode 12b formed therein to which positive and negative voltages are applied. An area ratio of the positive electrode 12a and the negative electrode 12b to a chucking surface of the chuck body is in the range of 60% to 90%.

Abstract: In fabrication of a semiconductor device which is provided with resistances and MOS transistors on the same substrate, preventing conduction failures of contacts and preventing leaching of wiring metal into a silicon substrate. Firstly, an underlying structure is prepared. Then, a silicon oxide layer is formed on the underlying structure. Then, a silicon nitride layer is formed on the silicon oxide layer. Then, an inter-layer insulation layer is formed on the silicon nitride layer. Then, a contact hole is formed penetrating through a laminate of the silicon oxide layer, the silicon nitride layer and the inter-layer insulation layer. A thickness of the silicon oxide layer is a value in a range from 32 to 48 nm.