Abstract: A fuel supply system includes: a flange mounted at an upper opening in a fuel tank; a fuel pump that discharges fuel in the fuel tank; a high-pressure filter that filters fuel discharged from the fuel pump; and a filter case that accommodates the high-pressure filter and includes an upper case and a lower case, the upper case integrally formed with the flange. The fuel pump is fitted to an underside of the lower case to be positioned substantially coaxial with the high-pressure filter.

Abstract: A fuel supply system provided in a fuel tank includes: a fuel pump that sucks fuel reserved within the fuel tank via a suction filter and discharges the sucked fuel; a pressure regulator that maintains pressure of the fuel discharged from the fuel pump within a predetermined range; a pump holder that holds the fuel pump and the pressure regulator; and a cushioning rubber extending in radial and axial directions of the fuel pump between the pump holder and the fuel pump for damping vibrations associated with driving of the fuel pump. Excess fuel is introduced in a flow path from the pressure regulator to the suction filter. The flow path includes: a gap defined between the pump holder and the cushioning rubber; and a gap defined between the cushioning rubber and the fuel pump.

Abstract: Cell/organism is separated by using a hydrogel capable of selectively moving a cell in accordance with a difference in the concentration of a physiologically active substance. The invention provides a hydrogel capable of conducting separation (fractionation, differential separation, fractional collection) of cell/organism having a variety of taxes, which could not be attained in the prior art.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A fluid supply nozzle includes a fluid flow-in section into which a fluid flows in, a reservoir section for storing the fluid, a flow velocity control wall provided between the fluid flow-in section and the reservoir section and including an orifice for making the fluid flow in the reservoir section while reducing a flow velocity, and a discharging section including a slit for discharging the fluid with pressure of the fluid applied to the reservoir section. A substrate processing apparatus is formed so as to include the fluid supply nozzle. Moreover, a substrate processing method includes the step of discharging a fluid in a single-layered, continuous film to supply the fluid onto a substrate. Thus, the substrate is processed. To perform this method, the fluid supply nozzle of the present invention can be used.

Abstract: A process for forming a resist pattern according to the invention is a process for forming a resist pattern in which a photoresist is coated on a first substrate, the coated photoresist is exposed to light of a predetermined pattern, and afterwards developing is performed, wherein in at least one of the processes of coating, exposing, and developing, whenever lots to which the first substrate belongs change, the atmosphere residing in the lot is changed.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A leak detecting system for a transpiration purge system including a fuel tank 1 and a canister 13 includes a jet pump 8, which leads the atmosphere into the fuel tank 1 using a return flow of excess fuel of fuel pumped to an internal combustion engine, internal pressure measuring means 15, and fuel volume detecting means 18. After intaking air via pressurizing means for a predetermined time, the leak detecting system judges that a leak is present when a holding pressure measurement value in a state in which the transpiration purge system is closed is lower than a decompression calculation value calculated from a pressurization measurement value, an air volume, and a leak hole diameter.

Abstract: A fuel pump is obtained, by which a high fuel pump-up height and a short fuel pump-up time can be achieved without deteriorating a fuel injection state by discharging a vapor toward the [Means for Resolution] An air exhaust port having a channel area s satisfying s?0.07 mm2 is provided in a lower channel including the terminal of a pump channel, and an air exhaust valve mechanism that opens the valve when the pump is started to exhaust intake air and closes the valve as soon as the application of pressure on the fuel is started to prevent the fuel from being exhausted to the outside of the pump channel is provided.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A rotary encoder includes a shaft which serves as a rotation axis, a disc supporting plate fixed to the shaft, an encoder disc having a center hole, a first side face, and a second side face opposing the first side face, an elastic member contacting and pressing the second side face of the encoder disc, and a retaining member retaining the second side face of the encoder disc via the elastic member. The first side face is contacted with a surface of the disc supporting plate. The shaft is inserted into the hole. A belt conveyance apparatus includes an endless belt, a roller configured to rotate the endless belt, including a shaft and the rotary encoder. The rotary encoder is provided on the shaft of the roller. An electrophotographic image forming apparatus includes an image forming unit and the belt conveyance apparatus.

Abstract: A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.

Abstract: A ferroelectric storage device includes a ferroelectric capacitor C1, a bit line BL, a first switching element 103 selectively connecting the ferroelectric capacitor C1 and the bit line BL, a first transistor 203 connected to the bit line BL and to a reference potential, a reference ferroelectric capacitor CR1, a reference bit line Lref, a reference switching element 105 selectively connecting the reference ferroelectric capacitor CR1 and the reference bit line Lref, a second transistor 201 connected to the reference bit line Lref and to the reference potential, potential control circuits 110 and 200 controlling a potential of the bit line BL and a potential of the reference bit line Lref, and a timing control circuit 210 controlling a detection timing for detecting data on the bit line.

Abstract: A leak detecting system for a transpiration purge system including a fuel tank 1 and a canister 13 includes a jet pump 8, which leads the atmosphere into the fuel tank 1 using a return flow of excess fuel of fuel pumped to an internal combustion engine, internal pressure measuring means 15, and fuel volume detecting means 18. After supplying the air from pressurizing means for a predetermined time, the leak detecting system judges that a leak is present when a holding pressure measurement value in a state in which the transpiration purge system is closed is lower than a decompression calculation value calculated from a pressurization measurement value, an air volume, and a leak hole diameter.

Abstract: A ferroelectric memory including a ferroelectric capacitor to store data; a bit line inputting and outputting data with respect to the ferroelectric capacitor; a control circuit having a first field effect transistor to be connected to the bit line and a reference potential, and to lower potential of the bit line when the bit line is connected to the ferroelectric capacitor; a reference ferroelectric capacitor to store fixed data; a reference bit line to input and output data with respect to the reference ferroelectric capacitor; and a second field effect transistor to be connected to the reference bit line and the reference potential, in which the first and second field effect transistors configure a current mirror circuit, is provided.

Abstract: A ferroelectric storage device includes a ferroelectric capacitor C1, a bit line BL, a first switching element 103 selectively connecting the ferroelectric capacitor C1 and the bit line BL, a first transistor 203 connected to the bit line BL and to a reference potential, a reference ferroelectric capacitor CR1, a reference bit line Lref, a reference switching element 105 selectively connecting the reference ferroelectric capacitor CR1 and the reference bit line Lref, a second transistor 201 connected to the reference bit line Lref and to the reference potential, potential control circuits 110 and 200 controlling a potential of the bit line BL and a potential of the reference bit line Lref, and a timing control circuit 210 controlling a detection timing for detecting data on the bit line.

Abstract: The present invention provides a display device which can provide a stereoscopic display to a viewer by overlapping a plurality of sheets of liquid crystal panels. A front liquid crystal panel and a rear liquid crystal panel are overlapped to each other. The display device also includes a TCON board on which timing controllers which are connected with a front liquid crystal panel and a rear liquid crystal panel are arranged. The timing controllers output output I/F signals to the front liquid crystal panel and the rear liquid crystal panel based on input I/F signals which are inputted from an external image signal source.

Abstract: A semiconductor memory device is characterized by including a bit line, a transistor coupled to the bit line, a ferroelectric memory cell coupled to the bit line via the transistor, a shift circuit coupled to the bit line to lower a data potential that appears on the bit line in response to data stored in the memory cell, and a sense amplifier coupled to the bit line and to a ground potential to amplify a potential difference between the data potential lowered by the shift circuit and the ground potential.

Abstract: A fuel vapor leak detecting apparatus, includes: a valve which is in a vapor purge system including a canister that is communicated with a fuel tank and an internal combustion engine, and which controllably closes the vapor purge system; a pressurizing section which introduces atmospheric air into the vapor purge system to pressurize the vapor purge system; and an internal-pressure measuring section which detects an internal pressure of the vapor purge system. The pressurizing section supplies the air for a predetermined time in a state where the vapor purge system is closed. When the internal pressure measured by the internal-pressure measuring section at the air supply is equal to or lower than a preset criterion pressure, it is judged that leak occurs.

Abstract: A fuel filter includes: a filtration chamber consisting of an inner cylinder and an outer cylinder disposed concentrically with a predetermined space, a bottom part that closes an opening end on one end side of the inner cylinder and the outer cylinder, and a lid part disposed with a fuel suction pipe and a fuel sending pipe, that closes an opening end on the other end side of the inner cylinder and the outer cylinder; and a filtering member that is accommodated in a filtration chamber and filtrates fuel that flows into the filtration chamber. In this filter, a centrifugal force applying member for centrifuging the fuel that flows into is disposed at the end of the filtering member on the lid part side. A groove portion extending along an inner wall face of the outer cylinder is formed on the bottom part.