Patents by Inventor Hirotada Oishi
Hirotada Oishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10369658Abstract: The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.Type: GrantFiled: July 5, 2016Date of Patent: August 6, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Publication number: 20160311057Abstract: The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.Type: ApplicationFiled: July 5, 2016Publication date: October 27, 2016Inventors: Koichiro TANAKA, Hirotada OISHI
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Patent number: 9387553Abstract: The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.Type: GrantFiled: August 24, 2011Date of Patent: July 12, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Patent number: 8891170Abstract: A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical lens array are included. The following formula is satisfied: 1/f=1/(a+b)+1/c, when: “a” is a distance between an emission opening of the laser oscillator and the deflecting mirror; “b” is a distance between the deflecting mirror and the transfer lens; “c” is a distance between the transfer lens and an incidence plane of the cylindrical lens array; and “f” is a focal length of the transfer lens.Type: GrantFiled: June 29, 2011Date of Patent: November 18, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Patent number: 8670641Abstract: The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide.Type: GrantFiled: November 29, 2012Date of Patent: March 11, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Patent number: 8580700Abstract: To provide a method for manufacturing a semiconductor device using a method in which a desired position is rapidly subjected to laser irradiation while switching laser irradiation patterns. With respect to an organic memory element having a structure in which an organic compound layer is interposed between a pair of conductive layers, data is written to the organic memory element by laser irradiation using a laser irradiation apparatus. Further, a laser beam emitted from a laser oscillator is split by a diffractive optical element into a plurality of laser beams, thereby irradiating a plurality of portions on the organic compound layer with laser beams by single irradiation.Type: GrantFiled: February 5, 2007Date of Patent: November 12, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Patent number: 8512917Abstract: A photomask is provided, with which the roundness of a corner portion of a resist mask can be reduced in a photolithography step. Further, a method for manufacturing a semiconductor device with less variation is provided. A photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and (k+1) sides (k is a natural number of 3 or more) form k obtuse angles in the auxiliary pattern. Alternatively, a photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and the auxiliary pattern includes a zigzag curve.Type: GrantFiled: April 26, 2011Date of Patent: August 20, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hideaki Shishido, Yuto Yakubo, Hirotada Oishi
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Patent number: 8455790Abstract: To provide a laser irradiation apparatus and a laser irradiation method in which a region formed with microcrystals in a region irradiated with laser beams is decreased by disposing a slit in an optical system using a deflector, and laser processing can be favorably conducted to a semiconductor film. Further to provide a semiconductor manufacturing apparatus using the above-described laser irradiation apparatus and the laser irradiation method. In the optical system, an f-? lens having an image space telecentric characteristic or a slit the shape of which is changed in accordance with the incidence angle of a laser beam, is used. The slit is disposed between the f-? lens and an irradiation surface, and an image at a slit opening portion is projected onto the irradiation surface by a projection lens. By the above-described structure, laser irradiation can be uniformly conducted to a whole region scanned with laser beams.Type: GrantFiled: December 11, 2006Date of Patent: June 4, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Patent number: 8426324Abstract: A method for manufacturing a memory element is proposed. A laser beam emitted from a laser oscillator is entered into a deflector, and a laser beam which has passed through the deflector is entered into a diffractive optical element to be diverged into a plurality of laser beams. Then, a photoresist formed over an insulating film is irradiated with the laser beam which is made to diverge into the plurality of laser beams, and the photoresist irradiated with the laser beam is developed so as to selectively etch the insulating film.Type: GrantFiled: April 6, 2011Date of Patent: April 23, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Patent number: 8372762Abstract: In a manufacturing process of a semiconductor device, a manufacturing technique and a manufacturing apparatus of a semiconductor device which simplify a lithography step using a photoresist is provided, so that the manufacturing cost is reduced, and the throughput is improved. An irradiated object, in which a light absorbing layer and an insulating layer are stacked over a substrate, is irradiated with a multi-mode laser beam and a single-mode laser beam so that both the laser beams overlap with each other, and an opening is formed by ablation in part of the irradiated object the irradiation of which is performed so that both the laser beams overlap with each other.Type: GrantFiled: June 3, 2010Date of Patent: February 12, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirotada Oishi, Koichiro Tanaka
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Patent number: 8326102Abstract: The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide.Type: GrantFiled: March 23, 2011Date of Patent: December 4, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Patent number: 8309443Abstract: It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the split beams to reduce optical interference. The optical path difference is set to have a length equivalent to the pulse width of the megahertz laser beam or more and less than a length equivalent to the pulse repetition interval; thus, optical interference can be suppressed with a very short optical path difference. Therefore, laser beams can be applied continuously and efficiently without energy deterioration.Type: GrantFiled: November 4, 2009Date of Patent: November 13, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Publication number: 20110304920Abstract: The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.Type: ApplicationFiled: August 24, 2011Publication date: December 15, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Koichiro TANAKA, Hirotada OISHI
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Publication number: 20110269060Abstract: A photomask is provided, with which the roundness of a corner portion of a resist mask can be reduced in a photolithography step. Further, a method for manufacturing a semiconductor device with less variation is provided. A photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and (k+1) sides (k is a natural number of 3 or more) form k obtuse angles in the auxiliary pattern. Alternatively, a photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and the auxiliary pattern includes a zigzag curve.Type: ApplicationFiled: April 26, 2011Publication date: November 3, 2011Inventors: Hideaki Shishido, Yuto Yakubo, Hirotada Oishi
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Patent number: 8045271Abstract: The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.Type: GrantFiled: August 5, 2009Date of Patent: October 25, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Publication number: 20110255172Abstract: A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical lens array are included. The following formula is satisfied: 1/f=1/(a+b)+1/c, when: “a” is a distance between an emission opening of the laser oscillator and the deflecting mirror; “b” is a distance between the deflecting mirror and the transfer lens; “c” is a distance between the transfer lens and an incidence plane of the cylindrical lens array; and “f” is a focal length of the transfer lens.Type: ApplicationFiled: June 29, 2011Publication date: October 20, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Koichiro TANAKA, Hirotada OISHI
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Patent number: 8000016Abstract: A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical lens array are included. The following formula is satisfied: 1/f=1/(a+b)+1/c, when: “a” is a distance between an emission opening of the laser oscillator and the deflecting mirror; “b” is a distance between the deflecting mirror and the transfer lens; “c” is a distance between the transfer lens and an incidence plane of the cylindrical lens array; and “f” is a focal length of the transfer lens.Type: GrantFiled: October 20, 2006Date of Patent: August 16, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi
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Publication number: 20110183500Abstract: A method for rapidly performing laser irradiation in a desired position as laser irradiation patterns are switched is proposed. A laser beam emitted from a laser oscillator is entered into a deflector, and a laser beam which has passed through the deflector is entered into a diffractive optical element to be diverged into a plurality of laser beams. Then, a photoresist formed over an insulating film is irradiated with the laser beam which is made to diverge into the plurality of laser beams, and the photoresist irradiated with the laser beam is developed so as to selectively etch the insulating film.Type: ApplicationFiled: April 6, 2011Publication date: July 28, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Koichiro TANAKA, Hirotada OISHI
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Publication number: 20110170198Abstract: The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide.Type: ApplicationFiled: March 23, 2011Publication date: July 14, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Koichiro TANAKA, Hirotada OISHI
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Patent number: 7940441Abstract: A method for rapidly performing laser irradiation in a desired position as laser irradiation patterns are switched is proposed. A laser beam emitted from a laser oscillator is entered into a deflector, and a laser beam which has passed through the deflector is entered into a diffractive optical element to be diverged into a plurality of laser beams. Then, a photoresist formed over an insulating film is irradiated with the laser beam which is made to diverge into the plurality of laser beams, and the photoresist irradiated with the laser beam is developed so as to selectively etch the insulating film.Type: GrantFiled: January 29, 2007Date of Patent: May 10, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hirotada Oishi