Patents by Inventor Hiroto FUJIKAWA

Hiroto FUJIKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12112943
    Abstract: A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.
    Type: Grant
    Filed: March 24, 2022
    Date of Patent: October 8, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Keita Kumagai, Hiroto Fujikawa, Ryo Watanabe
  • Publication number: 20240327984
    Abstract: A film forming method for forming a silicon film on a substrate, includes preparing a substrate having a first film and a second film on a surface thereof, supplying a growth inhibiting gas that inhibits growth of the silicon film to the substrate, to cause physical adsorption of the growth inhibiting gas on the first film, and forming the silicon film on the first film and on the second film by supplying a silane-based gas having a silicon number 1 to the substrate having the growth inhibiting gas physically adsorbed on the first film.
    Type: Application
    Filed: March 25, 2024
    Publication date: October 3, 2024
    Inventors: Tuhin Shuvra Basu, Hiroto FUJIKAWA, Yutaka MOTOYAMA, Keita KUMAGAI
  • Publication number: 20240328033
    Abstract: A film forming method for forming a silicon film on a substrate, includes supplying a silane-based gas and a termination gas to the substrate during a period. The termination gas includes an element having an electronegativity lower than an electronegativity of hydrogen, and the supplying includes terminating a dangling bond of silicon in the silicon film with the element.
    Type: Application
    Filed: March 19, 2024
    Publication date: October 3, 2024
    Inventors: Tuhin Shuvra BASU, Hiroto FUJIKAWA, Keita KUMAGAI, Yoshihiro TAKEZAWA, Daisuke SUZUKI
  • Publication number: 20220319843
    Abstract: A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.
    Type: Application
    Filed: March 24, 2022
    Publication date: October 6, 2022
    Inventors: Keita KUMAGAI, Hiroto FUJIKAWA, Ryo WATANABE