Abstract: According to one embodiment, an infrared imaging device includes a substrate, an infrared absorption unit, a thermoelectric conversion unit, a support body, and an interconnection. The infrared absorption unit is provided on the substrate and apart from the substrate to absorb an infrared ray. The thermoelectric conversion unit is provided apart from the substrate and in contact with the infrared absorption unit between the infrared absorption unit and the substrate. The thermoelectric conversion unit converts a temperature change due to the infrared ray absorbed by the infrared absorption unit into an electrical signal. The support body supports the thermoelectric conversion unit on the substrate and apart from the substrate and transmits the electrical signal. The interconnection transmits the electrical signal in reading the electrical signal. The infrared absorption unit includes a protrusion provided on a rim of the infrared absorption unit to protrude toward the substrate.

Abstract: In a pixel unit, cells are arranged in rows and columns two-dimensionally. Each of the cells accumulates signal charge obtained by photoelectrically converting light incident on photoelectric conversion section and outputs a voltage corresponding to the accumulated signal charge. On the cells, W, R, G, and B color filters are provided. Analog signals output from the W pixel, R pixel, G pixel, and B pixel are converted into digital signals by an analog/digital converter circuit, which outputs a W signal, an R signal, a G signal, and a B signal separately. A W signal saturated signal quantity is controlled by a saturated signal quantity control circuit. Then, a signal generator circuit corrects the R signal, the G signal, and the B signal using the W signal, the R signal, the G signal, and B signal output from the analog/digital converter circuit and outputs the corrected R, G, and B signals.

Abstract: According to one embodiment, an electronic device includes an airtight container, a functioning unit, and an airtightness detection unit. The airtight container has a containment space capable of being sealed airtightly. The functioning unit is stored in the containment space. The functioning unit is capable of executing a prescribed function. The airtightness detection unit is stored in the containment space. The airtightness detection unit is capable of detecting an airtightness of the containment space.

Abstract: A two-dimensional digital data acquisition element includes: a pixel area having a plurality of pixels arranged in a matrix form, each of the pixels having a photoelectric conversion element to convert the reproduced light from the optical information recording medium to an electric signal; selection circuits which select the pixel; a readout circuit which reads out an electric signal of a pixel selected by the selection circuits; and a 1-bit AD converter which converts an output of the readout circuit to 1-bit digital data. A pitch ratio N between a pitch P1 of the unit data areas in the two-dimensional digital image information and a pitch P2 of the pixels in the pixel area defined as N=P1/P2 satisfies a relation A·n2/(An+1)<N<A·n2/(An?1) where A is the number of digital data in one-dimensional direction of one byte of the two-dimensional digital data and n is a natural number of at least 2.

Abstract: The present invention enables to provide a simple and inexpensive electromagnetic wave sensor that selectively detects sub-millimeter waves and millimeter waves in a specific frequency band, an imaging element and an imaging device. The distance of the gap between a plurality of antenna elements is smaller than the wavelength of infrared light. A capacitor electrically formed by the gap between the plurality of antenna elements, and an electrical resistor portion form parallel circuits electrically coupled to the antenna portion. The plurality of antenna elements are formed so that the impedance of the antenna portion is matched with the impedance of the parallel circuits against electromagnetic waves having a predetermined frequency, and is not matched against the higher harmonics of electromagnetic waves having the predetermined frequency.

Abstract: An infrared-detecting element includes: a substrate; a laminated body; an anchor coupling a part of the laminated body with the substrate and supporting the laminated body with a gap above the substrate; and an amplifier provided on the substrate and connected to at least one of the lower electrode and the upper electrode. The laminated body has a lower electrode, an upper electrode, and a piezoelectric film made of aluminum nitride which is provided between the lower electrode and the upper electrode and in which a c-axis is oriented almost perpendicularly to a film plane. The amplifier has a circuit performing conversion into voltage according to a charge generated in the laminated body.

Abstract: An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element.

Abstract: A solid-state image sensing device has a plurality of pixels, a read-out circuit for reading out electric signals obtained by the photoelectric conversion element, and a signal processing unit for performing signal processing for the electric signal read out from the read-out circuit. The plurality of pixels include a first pixel having a transparent film, a plurality of second pixels each having a first color filter, a plurality of third pixels each having a second color filter, and a plurality of fourth pixels each having a third color filter. The signal processing unit has a color acquisition unit for acquiring a white pixel value and first to third color pixel values, an edge judgment unit, a color separation unit and a single color pixel calculation unit.

Abstract: A solid-state image sensor has a plurality of pixels, a read-out circuit and a signal processing section. The plurality of pixels includes a plurality of first pixels, a plurality of second pixels, a plurality of third pixels and a plurality of fourth pixels.

Abstract: A bolometer type uncooled infrared ray sensor includes: an image pickup region having detection pixels arranged in a matrix form on a semiconductor substrate to detect incident infrared rays; a plurality of row selection lines provided in the image pickup region; current sources capable of letting constant currents flow through the respective row selection lines; a plurality of signal lines provided in the image pickup region; voltage readout circuits provided so as to respectively correspond to the signal lines to read out signal voltages generated on the respectively corresponding signal lines; coupling capacitances respectively provided between the respective signal lines and the corresponding voltage readout circuits; and a calculator which calculates a difference between two signal voltages read out by the voltage readout circuits, corresponding to outputs of the same detection pixel for two different current values supplied from the current sources.

Abstract: A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.

Abstract: An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

Abstract: The present invention provides a solid-state image sensing device that converts long-wavelength light represented by the terahertz band into electric signals without being affected by the fluctuation of radiated heat, and outputs the signals mainly as picture signals; a method for manufacturing the same, and an imaging system. The cell unit has an antenna to generate electrical signals by receiving incident electric waves, an electrical resistor electrically connected to the antenna, and to vary the temperature of the cell unit by generating Joule heat corresponding to the electrical signals, and a thermoelectric conversion element electrically connected to the support structure portion, electrically insulated from the antenna and the electrical resistor, and thermally connected to the electrical resistor, to generate electrical signals by detecting the temperature variation of the cell unit; and the side of the incident electric waves in the cell unit is formed of a material to reflect infrared lights.

Abstract: An infrared detector includes: a readout wiring portion provided on a semiconductor substrate; a support structure portion disposed over a concave portion formed in a surface portion of the semiconductor substrate, the support structure portion having connection wiring connected electrically to the readout wiring portion; and a cell portion disposed over the concave portion and supported by the support structure portion.

Abstract: A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface.

Abstract: An optical element includes a plurality of first beam bodies arranged in a first direction on a first plane and being parallel to each other, and second beam bodies placed between adjacent ones of the first beam bodies and provided parallel to the first beam bodies. The first beam body has side surfaces which face the second beam bodies adjacent thereto and are sloped so that the width in the first direction gradually decreases to the upward direction perpendicular to the first plane, the second beam body has side surfaces which face the first beam bodies adjacent thereto and are sloped so that the width in the first direction gradually increases to the upward direction perpendicular to the first plane, and as viewed in the first direction, the spacing between the first beam body and the second beam body is variable.

Abstract: An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part.

Abstract: An infrared-detecting element includes: a substrate; a laminated body; an anchor coupling a part of the laminated body with the substrate and supporting the laminated body with a gap above the substrate; and an amplifier provided on the substrate and connected to at least one of the lower electrode and the upper electrode. The laminated body has a lower electrode, an upper electrode, and a piezoelectric film made of aluminum nitride which is provided between the lower electrode and the upper electrode and in which a c-axis is oriented almost perpendicularly to a film plane. The amplifier has a circuit performing conversion into voltage according to a charge generated in the laminated body.

Abstract: This disclosure concerns a solid-state imaging device including a pixel thermally separated from a substrate; a heat conduction switch having one end connected to the substrate and other end capable of contacting to the substrate or the pixel, the heat conduction switch changing over a state of the pixel to one of a first state and a second state, the first state being a state in which the pixel is thermally isolated from the substrate by causing the other end of the heat conduction switch to contact with the substrate, the second state being a state in which the pixel is thermally shorted to the substrate by causing the other end of the heat conduction switch to contact with the pixel; and a signal detector detecting a difference between the signal voltage of the pixel in the first state and the signal voltage of the pixel in the second state.

Abstract: A bolometer type uncooled infrared ray sensor includes: an image pickup region having detection pixels arranged in a matrix form on a semiconductor substrate to detect incident infrared rays; a plurality of row selection lines provided in the image pickup region; current sources capable of letting constant currents flow through the respective row selection lines; a plurality of signal lines provided in the image pickup region; voltage readout circuits provided so as to respectively correspond to the signal lines to read out signal voltages generated on the respectively corresponding signal lines; coupling capacitances respectively provided between the respective signal lines and the corresponding voltage readout circuits; and a calculator which calculates a difference between two signal voltages read out by the voltage readout circuits, corresponding to outputs of the same detection pixel for two different current values supplied from the current sources.