Abstract: A composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film, one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, and one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes, wherein the electrode surface and the base member second surface form a same flat surface.

Abstract: A manufacturing method of an electronic structure includes forming a second sacrificial layer extending from a substrate to a function part of a layered substrate including the substrate, a first sacrificial layer formed on the substrate, and the function part formed on the first sacrificial layer. The manufacturing method further includes forming a cover layer extending from the substrate to the second sacrificial layer, and removing the first sacrificial layer and the second sacrificial layer.

Abstract: A light emitting device includes a first layer including a first light emitting element that has a first light emission region and a first transparent insulation member that covers the first light emitting element; a second layer stacked on the first layer and including a second light emitting element that has a second light emission region and a second transparent insulation member that covers the second light emitting element; and a third layer stacked on the second layer and including a third light emitting element that has a third light emission region, at least partially overlapping with the first light emission region and the second light emission region, and a third transparent insulation member that covers the third light emitting element, wherein the third light emission region is formed so that its area is larger than the first light emission region and the second light emission region.

Abstract: A manufacturing method of a semiconductor element includes forming a plurality of semiconductor layers on a sapphire substrate, each of the semiconductor layers having a first surface on the sapphire substrate side and a second surface on the opposite side, joining the second surfaces of the plurality of semiconductor layers to a retention member via an adhesive member, peeling off the plurality of semiconductor layers from the sapphire substrate by irradiating the first surfaces of the plurality of semiconductor layers with laser light, and polishing the first surfaces of the plurality of semiconductor layers. At least one semiconductor layer among the plurality of semiconductor layers includes a polishing indication part extending from the second surface toward the first surface. The polishing is executed until the polishing indication part is exposed to the polished surface.

Abstract: A manufacturing method of a semiconductor element includes forming a plurality of islands, each including a semiconductor layer containing a nitride semiconductor and a support formed on the semiconductor layer, on a sapphire substrate, joining the support to a retention substrate via an adhesive member, peeling off the semiconductor layer from the sapphire substrate by irradiating the semiconductor layer with laser light, and polishing a surface of the semiconductor layers peeled off from the sapphire substrate.

Abstract: A semiconductor device includes: a planarized layer having insulating properties, the planarized layer having a first surface and a second surface opposite the first surface; a plurality of semiconductor elements formed on the first surface of the planarized layer; and a groove provided in the second surface of the planarized layer. The groove is formed in a region outside the plurality of semiconductor elements as viewed in a direction perpendicular to the first surface.

Abstract: An electronic structure includes: a substrate having a first surface; a functional element unit including a functional element having an electronic function, and a protector covering the functional element, the functional element unit having a second surface facing the first surface; a support disposed between the first surface and the second surface, the support supporting the second surface; and a projection disposed on a first surface side of the substrate, the projection projecting toward the functional element unit. The support has a third surface in contact with the second surface of the functional element unit, the third surface having an area smaller than an area of the second surface. The projection has a fourth surface in contact with or close to the functional element unit, the fourth surface having an area smaller than the area of the second surface, the projection being formed by a different material from the support.

Abstract: A semiconductor device includes: a first layer including a first optical semiconductor element; a second layer including a second optical semiconductor element having a lower conversion efficiency than the first optical semiconductor element; and a lens member. The first optical semiconductor element and the second optical semiconductor element are disposed between the lens member and a focal point of the lens member in an optical axis direction of the lens member, at least partially overlap as viewed in the optical axis direction, and are disposed so that the second optical semiconductor element is closer to the focal point than the first optical semiconductor element.

Abstract: A light emitting device includes: a first layer in which a first light emitting element is disposed; a second layer stacked on the first layer and including a second light emitting element that at least partially overlaps the first light emitting element as viewed in a light emitting direction perpendicular to a light emitting surface of the first light emitting element; and a control substrate on which the first layer is stacked and that controls light emission of the first light emitting element and the second light emitting element. The first layer includes a first surface facing the second layer in the light emitting direction, a second surface facing the control substrate in the light emitting direction, and a first opening formed from the first surface to the second surface. The second light emitting element and the control substrate are electrically connected together through the first opening.

Abstract: A semiconductor element unit includes a semiconductor element; and a first electrode having a flat first electrode mounting surface whose surface roughness is less than or equal to 10 [nm] and forming eutectic bonding with the semiconductor element in a part different from the first electrode mounting surface. A semiconductor element unit supply substrate includes one or more semiconductor element units. A semiconductor packaging circuit includes the semiconductor element unit.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a P type, a second semiconductor layer of an N type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the P type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the N type arranged adjacent to the third semiconductor layer. A part of the first semiconductor layer is an active layer adjacent to the second semiconductor layer. A dopant concentration of the active layer is higher than or equal to a dopant concentration of the third semiconductor layer. A thickness of the third semiconductor layer is thinner than a thickness of the second semiconductor layer. A dopant concentration of the second semiconductor layer is lower than the dopant concentration of the third semiconductor layer.

Abstract: A composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film, one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, and one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes, wherein the electrode surface and the base member second surface form a same flat surface.

Abstract: A light emitting device includes a pixel set unit that includes a plurality of pixels arranged in a grid; first common wiring that connects together first terminals of pixels aligned in a first direction among the plurality of pixels; and second common wiring that connects together second terminals of two pixels aligned in a second direction orthogonal to the first direction among the plurality of pixels.

Abstract: Provided is a light emitting device that includes a substrate including electrodes; a film member; light emitting elements arranged on the film member; and conductive members that electrically connect the light emitting elements and the electrodes to each other, wherein the film member has through holes formed at positions corresponding to the electrodes, and each of the conductive members includes a first conductive part extending from the light emitting element to the through hole and a second conductive part connecting the first conductive part and the electrode to each other via the through hole.

Abstract: A semiconductor device includes a base material and light emitting elements (or LEE) aligned in a first direction on the base material. Among the LEEs, a first LEE is provided with a first semiconductor multilayer structure and a first organic insulating film. Among the LEEs, a second LEE is provided with a second semiconductor multilayer structure and a second organic insulating film. A first multilayer structure width is smaller than a second multilayer structure width that is the first direction width of the second semiconductor multilayer structure, a first multilayer structure thickness is narrower than a second multilayer structure thickness, and a first film thickness is greater than a second film thickness wherein the first film thickness is a thickness of a portion of the first organic insulating film and a second film thickness is a thickness of a portion of the second organic insulating film.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a P type, a second semiconductor layer of an N type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the P type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the N type arranged adjacent to the third semiconductor layer. A part of the first semiconductor layer is an active layer adjacent to the second semiconductor layer. A dopant concentration of the active layer is higher than or equal to a dopant concentration of the third semiconductor layer. A thickness of the third semiconductor layer is thinner than a thickness of the second semiconductor layer. A dopant concentration of the second semiconductor layer is lower than the dopant concentration of the third semiconductor layer.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.

Abstract: A semiconductor device includes a light-emitting thyristor, including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type, and first to third electrodes. The first semiconductor layer includes a first layer, a second layer having a band gap wider than band gaps of the second semiconductor layer and the third semiconductor layer, and a third layer having an impurity concentration higher than impurity concentrations of the second semiconductor layer and the third semiconductor layer and having a band gap narrower than or equal to the band gaps of the second semiconductor layer and the third semiconductor layer.