Patents by Inventor Hiroto SAITO

Hiroto SAITO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220077286
    Abstract: A semiconductor device in an embodiment includes a substrate and a transistor. The transistor includes a source layer, a drain layer, a gate insulation film, a gate electrode, a contact plug and a first epitaxial layer. The source layer and the drain layer are provided in surface regions of the substrate, and contain an impurity. The gate insulation film is provided on the substrate between the source layer and the drain layer. The gate electrode is provided on the gate insulation film. The contact plug is provided so as to protrude to the source layer or the drain layer downward of a surface of the substrate. The first epitaxial layer is provided between the contact plug and the source layer or drain layer, and contains both the impurity and carbon.
    Type: Application
    Filed: June 17, 2021
    Publication date: March 10, 2022
    Applicant: Kioxia Corporation
    Inventors: Tomonari SHIODA, Yasunori OSHIMA, Taichi IWASAKI, Shota YAMAGIWA, Hiroto SAITO
  • Patent number: 11127748
    Abstract: A semiconductor device includes a substrate, a first insulating layer, a second insulating layer above the first insulating layer, a void space between the first and second insulating layers, and contact electrodes extending through the first insulating layer, the void space, and the second insulating layer. Each of the contact electrodes includes a first end facing the substrate, a second end opposite to the first end, and a first width portion between the first end and the second end. The first width portion has a width in a second direction parallel to the substrate that is greater than a width of the first end in the second direction and a width of the second end in the second direction. The first width portion is within the void space.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: September 21, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Shizuka Kutsukake, Hiroshi Matsumoto, Hiroto Saito
  • Publication number: 20200286904
    Abstract: A semiconductor device includes a substrate, a first insulating layer, a second insulating layer above the first insulating layer, a void space between the first and second insulating layers, and contact electrodes extending through the first insulating layer, the void space, and the second insulating layer. Each of the contact electrodes includes a first end facing the substrate, a second end opposite to the first end, and a first width portion between the first end and the second end. The first width portion has a width in a second direction parallel to the substrate that is greater than a width of the first end in the second direction and a width of the second end in the second direction. The first width portion is within the void space.
    Type: Application
    Filed: September 3, 2019
    Publication date: September 10, 2020
    Inventors: Shizuka KUTSUKAKE, Hiroshi MATSUMOTO, Hiroto SAITO
  • Publication number: 20190283242
    Abstract: A multi-directional drive device includes a first drive motor supported by a holding portion and having a first drive shaft, a rotary member integrally connected to the first drive shaft of the first drive motor and configured to rotate together with the first drive shaft, a spherical body supported on the rotary member to be relatively rotatable and configured to rotate about a second rotation center axis different from a first rotation center axis of the first drive shaft, a second drive motor mounted on the rotary member and having a second drive shaft independent of the first drive shaft, and a transmission mechanism provided between the second drive shaft of the second drive motor and the spherical body on the rotary member and configured to transmit power of the second drive shaft to the spherical body and cause the spherical body to slidably rotate about the second rotation center axis with respect to the rotary member, wherein a body to be operated is supported by the spherical body.
    Type: Application
    Filed: November 10, 2017
    Publication date: September 19, 2019
    Applicants: NEC Embedded Products, Ltd., National University Corporation Yamagata University
    Inventors: Yasunori OKAZAKI, Tomomi MATSUDA, Riichiro TADAKUMA, Hiroto SAITO, Kazuki ABE, Shinnosuke HAO, Kazuki MOGI
  • Patent number: 10401711
    Abstract: A multidirectional drive device includes: a driven member that comprises a spherical surface having depressions and protrusions; a rotation driving part that is in contact with the spherical surface of the driven member and rotates the driven member; and a supporting member that is fixed to the driven member and supports an operated body. At least either one of a position and an orientation of the operated body is adjusted by rotation of the driven member.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: September 3, 2019
    Assignee: NEC Embedded Products, Ltd.
    Inventors: Tomomi Matsuda, Riichiro Tadakuma, Hiroto Saito, Kazuki Abe
  • Publication number: 20180284578
    Abstract: A multidirectional drive device includes: a driven member that comprises a spherical surface having depressions and protrusions; a rotation driving part that is in contact with the spherical surface of the driven member and rotates the driven member; and a supporting member that is fixed to the driven member and supports an operated body. At least either one of a position and an orientation of the operated body is adjusted by rotation of the driven member.
    Type: Application
    Filed: September 29, 2016
    Publication date: October 4, 2018
    Applicant: NEC Embedded Products, Ltd.
    Inventors: Tomomi MATSUDA, Riichiro TADAKUMA, Hiroto SAITO, Kazuki ABE