Abstract: A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure. The failure analyzer 13 extracts as a candidate interconnection for a failure, an interconnection passing an analysis region, out of a plurality of interconnections, using interconnection information to describe a configuration of interconnections in the semiconductor device by a pattern data group of interconnection patterns in respective layers, and, for extracting the candidate interconnection, it performs an equipotential trace of the interconnection patterns using the pattern data group, thereby extracting the candidate interconnection.

Abstract: A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure. The failure analyzer 13 extracts candidate nets passing at least one of analysis regions set from the failure observed image, out of a plurality of nets in the semiconductor device, and passage counts of the respective candidate nets through the analysis regions, selects a candidate net with the largest passage count as a first failure net, and selects a second failure net with attention to analysis regions where the first failure net does not pass. This substantializes a semiconductor failure analysis apparatus, failure analysis method, and failure analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device using the failure observed image.

Abstract: When a semiconductor device 11 is observed, first, when it is detected that a solid immersion lens 6 comes into contact with the semiconductor device 11, the solid immersion lens 6 is caused to vibrate by a vibration generator unit. Next, a reflected light image from the solid immersion lens 6 is input to calculate a reflected light quantity m of the reflected light image, and it is judged whether a ratio (m/n) of the reflected light quantity m to an incident light quantity n is not greater than a threshold value A. When the ratio (m/n) is greater than the threshold value A, it is judged that optical close contact between the solid immersion lens 6 and the semiconductor device 11 is not achieved, and the solid immersion lens 6 is again caused to vibrate. When the ratio (m/n) is not greater than the threshold value A, it is judged that optical close contact between the solid immersion lens 6 and the semiconductor device 11 is achieved, and an observed image of the semiconductor device 11 is acquired.

Abstract: A solid immersion lens holder 200 includes a holder main body 8 having a lens holding unit 60 that holds a solid immersion lens 6, and an objective lens socket 9 for attaching the holder main body 8 to a front end of an objective lens 21. The solid immersion lens 6 is held in a state of being unfixed to be free with respect to the lens holding unit 60. A vibration generator unit 120 that causes the holder main body 8 to vibrate is attached to the objective lens socket 9. The vibration generator unit 120 has a vibrating motor 140 held by a motor holding member 130, and a weight 142 structured to be eccentric by weight is attached to an output shaft 141 of the vibrating motor 140. A vibration generated in the vibration generator unit 120 is transmitted to the solid immersion lens 6 via the objective lens socket 9 and the holder main body 8. Thereby, achieving the solid immersion lens holder capable of improving the close contact between the solid immersion lens and an observation object.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: An arrangement, equipped with a holder 9, which supports a solid immersion lens 3 in the gravity direction with the bottom surface of solid immersion lens 3 being protruded downward through an opening 9b, is provided. With this arrangement, when solid immersion lens 3 is set on an observed object, solid immersion lens 3 is put in a state in which it is raised by the observed object and is made free with respect to holder 9. Also in this state, an excessive pressure will not be applied to the observed object and yet solid immersion lens 3 is put in close contact in conformance with the observed object and temperature drifts at the holder 9 side or the observed object side are cut off from the counterpart side and thus the influences of such temperature drifts are eliminated. A solid immersion lens holder, with which the damaging of the observed object can be eliminated and which enables high-precision observation, is thus provided.

Abstract: Pulse excitation light, emitted from a laser light source 10, is scanned in a first direction by a first scanning means 100, scanned in a second direction, perpendicular to the first direction, by a second scanning means 120, converged by an objective optical system 140, and illuminated onto sample 50. Fluorescences, emitted from sample 50, are output from objective optical system 140 to second scanning means 120, scanned in the second direction, perpendicular to the first direction, and output to a light separation means 110 by second scanning means 120, output from light separation means 110 to a streak camera, and recorded as variations of time of the fluorescence intensities by streak camera 30. Fluorescence lifetimes are calculated based on these variations with time of the fluorescence intensities and a fluorescence lifetime distribution image is prepared.

Abstract: A solid immersion lens 1 comprises a spherical portion 2 and a bottom surface portion 3. The bottom surface portion 3 is attached in close contact with a substrate 10 of a semiconductor device to be an observed object. The bottom surface portion 3 of this solid immersion lens 1 is formed in a cylindrical shape. Thereby, a solid immersion lens which can be easily separated from the observed object after an observation and can, during an observation, allow a light flux with a high NA to pass and a microscope using the same can be obtained.

Abstract: Optical contact liquid containing an amphipathic molecule is dripped onto a semiconductor device which is a sample as an inspection object (S104), and a solid immersion lens is set thereon (S105). The inserted position of the solid immersion lens is then adjusted (S106). The optical contact liquid is then dried (S108), and thereby the solid immersion lens is brought into optically-close contact with the semiconductor device. As a result, a sample observation method and a microscope or the like can be realized, in which the solid immersion lens can be easily aligned to a desired position on the sample, and the solid immersion lens can be securely brought into optically-close contact with the sample.

Abstract: Optical contact liquid containing an amphipathic molecule is dripped onto a semiconductor device which is a sample as an inspection object (S104), and a solid immersion lens is set thereon (S105). The inserted position of the solid immersion lens is then adjusted (S106). The optical contact liquid is then dried (S108), and thereby the solid immersion lens is brought into optically-close contact with the semiconductor device. As a result, a sample observation method and a microscope or the like can be realized, in which the solid immersion lens can be easily aligned to a desired position on the sample, and the solid immersion lens can be securely brought into optically-close contact with the sample.

Abstract: Optical contact liquid containing an amphipathic molecule is dripped onto a semiconductor device which is a sample as an inspection object (S104), and a solid immersion lens is set thereon (S105). The inserted position of the solid immersion lens is then adjusted (S106). The optical contact liquid is then dried (S108), and thereby the solid immersion lens is brought into optically-close contact with the semiconductor device. As a result, a sample observation method and a microscope or the like can be realized, in which the solid immersion lens can be easily aligned to a desired position on the sample, and the solid immersion lens can be securely brought into optically-close contact with the sample.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure. The failure analyzer 13 extracts candidate nets passing at least one of analysis regions set from the failure observed image, out of a plurality of nets in the semiconductor device, and passage counts of the respective candidate nets through the analysis regions, selects a candidate net with the largest passage count as a first failure net, and selects a second failure net with attention to analysis regions where the first failure net does not pass. This substantializes a semiconductor failure analysis apparatus, failure analysis method, and failure analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device using the failure observed image.

Abstract: A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure. The failure analyzer 13 extracts as a candidate interconnection for a failure, an interconnection passing an analysis region, out of a plurality of interconnections, using interconnection information to describe a configuration of interconnections in the semiconductor device by a pattern data group of interconnection patterns in respective layers, and, for extracting the candidate interconnection, it performs an equipotential trace of the interconnection patterns using the pattern data group, thereby extracting the candidate interconnection.

Abstract: A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure of the semiconductor device. The failure analyzer 13 has an analysis region setter for comparing an intensity distribution in the failure observed image with a predetermined intensity threshold to extract a reaction region arising from a failure, and for setting an analysis region used in the failure analysis of the semiconductor device, in correspondence to the reaction region. This substantializes a semiconductor failure analysis apparatus, failure analysis method, and failure analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device using the failure observed image.

Abstract: A solid immersion lens 1 comprises a spherical portion 2 and a bottom surface portion 3. The bottom surface portion 3 is attached in close contact with a substrate 10 of a semiconductor device to be an observed object. The bottom surface portion 3 of this solid immersion lens 1 is formed in a cylindrical shape. Thereby, a solid immersion lens which can be easily separated from the observed object after an observation and can, during an observation, allow a light flux with a high NA to pass and a microscope using the same can be obtained.

Abstract: For a semiconductor device S as a sample of an observed object, there are provided an image acquisition part 1 for carrying out observation of the semiconductor device S, and an optical system 2 comprising an objective lens 20. A solid immersion lens (SIL) 3 for magnifying an image of the semiconductor device S is arranged movable between an insertion position where the solid immersion lens includes an optical axis from the semiconductor device S to the objective lens 20 and is in close contact with a surface of the semiconductor device S, and a standby position off the optical axis. Then an image containing reflected light from SIL 3 is acquired with the SIL 3 at the insertion position, and the insertion position of SIL 3 is adjusted by SIL driver 30, with reference to the image.

Abstract: The present invention relates to a laser beam inspection apparatus for inspecting a defect on a sample such as semiconductor integrated circuits by using a laser beam. The laser beam inspection apparatus irradiates a laser beam to a sample supplied with a constant current or applied by a constant voltage, and then detects indirectly a change in current or a change in electric field corresponding to a change in the value of resistance developed by scanning the laser beam along the surface of the sample. For example, the change in current is conducted indirectly in such a manner that a magnetic field detecting apparatus detects the change in the magnetic field caused by a current flowing the power supply line provided between a constant voltage source and a sample, and whereby it becomes possible to specify the defective area of the sample based on the detection of the change in the magnetic field.

Abstract: For a semiconductor device S as a sample of an observed object, there are provided an image acquisition part 1 for carrying out observation of the semiconductor device S, and an optical system 2 comprising an objective lens 20. A solid immersion lens (SIL) 3 for magnifying an image of the semiconductor device S is arranged movable between an insertion position where the solid immersion lens includes an optical axis from the semiconductor device S to the objective lens 20 and is in close contact with a surface of the semiconductor device S, and a standby position off the optical axis. Then an image containing reflected light from SIL 3 is acquired with the SIL 3 at the insertion position, and the insertion position of SIL 3 is adjusted by SIL driver 30, with reference to the image.