Abstract: Cellular phones include a power reception resonance coil arranged inside a first outer surface side of a housing, a power extracting unit for extracting power of an induction current of the power reception resonance coil, a magnetic core that has one end arranged inside the first outer surface side and the other end arranged inside a second outer surface side of the housing, and penetrates into the power reception resonance coil, and a printed board that is arranged in a space between the first outer surface and the second outer surface and has an area where circuit elements are not arranged on a periphery of the core.

Abstract: A wireless power transmitting device includes a housing configured to have a feeding surface on which a power receiving device is to be placed; a power transmitting coil disposed inside the housing and configured to have a central axis that intersects with the feeding surface; and an alternating-current power supply configured to supply power to the power transmitting coil, wherein the feeding surface has raised and recessed portions in an area corresponding to a region inside an outer region of the power transmitting coil.

Abstract: A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, another electrode, an oxide layer between the electrodes, and an oxide layer in contact with the oxide layer between the oxide layer and the electrode. The oxide layer is switchable from the low-resistance state to the high-resistance state by donating oxygen ions to the oxide layer, and from the high-resistance state to the low-resistance state by accepting oxygen ions from the oxide layer. The oxide layer is switchable from the low-resistance state to the high-resistance state by accepting oxygen ions from the oxide layer, and from the high-resistance state to the low-resistance state by donating oxygen ions to the oxide layer.

Abstract: A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.

Abstract: A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.

Abstract: A resistance variable device is provided, which is capable of making a bipolar operation based on a predetermined operation principle. The resistance variable device is usable as a storage device. The resistance variable device has a laminated structure which include, for example, a first electrode, a second electrode, and a hole conductive layer between the first and second electrodes. The hole conductive layer gives anions to the second electrode, thereby changing its state from a reference electric field state to a positive electric field state. The hole conductive layer also receives anions from the second electrode, thereby changing its state from the positive electric field state to the reference electric field state.

Abstract: The invention provides a variable-resistance element having a multilayer structure. The variable-resistance element includes, for example, a first electrode, a second electrode, and an oxygen ion migration layer disposed between the first electrode and the second electrode. In the oxygen ion migration layer, oxygen vacancy can be produced owing to oxygen ion migration, thereby forming a low resistance path. The variable-resistance element also includes an oxygen ion generation promoting layer disposed between the oxygen ion migration layer and the first electrode and held in contact with the oxygen ion migration layer.

Abstract: A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, an electrode, an oxide layer between the electrodes, and an oxide layer in contact with the oxide layer between the oxide layer and the electrode. The oxide layer is switchable from the low-resistance state to the high-resistance state by donating oxygen ions to the oxide layer, and from the high-resistance state to the low-resistance state by accepting oxygen ions from the oxide layer. The oxide layer is switchable from the low-resistance state to the high-resistance state by accepting oxygen ions from the oxide layer, and from the high-resistance state to the low-resistance state by donating oxygen ions to the oxide layer.

Abstract: The invention provides a variable-resistance element having a multilayer structure. The variable-resistance element includes, for example, a first electrode, a second electrode, and an oxygen ion migration layer disposed between the first electrode and the second electrode. In the oxygen ion migration layer, oxygen vacancy can be produced owing to oxygen ion migration, thereby forming a low resistance path. The variable-resistance element also includes an oxygen ion generation promoting layer disposed between the oxygen ion migration layer and the first electrode and held in contact with the oxygen ion migration layer.

Abstract: A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.

Abstract: This invention relates to a magnetic backlayer, and provides a magnetic backlayer giving a small spike noise spk and a small media noise Nm and exhibiting a large saturation magnetization Ms to have a good soft magnetic property. The magnetic backlayer is formed on a substrate; has a structure in that soft magnetic layers comprising iron and carbon as main components and nonmagnetic layers are alternately laminated; and has easy axes of magnetization in the in-plane direction of the film and the radius direction of the substrate.

Abstract: A recording medium substrate has on a surface thereof a foundation film for electroless plating film formation, or has such a foundation film and an electroless plating film formed thereon. The foundation film includes an alloy containing one metallic element selected from Co and Cu, and an element having a greater ionization tendency than the metallic element. A recording medium may be manufactured, for example, using such a recording medium substrate.

Abstract: This invention relates to a magnetic backlayer, and provides a magnetic backlayer giving a small spike noise spk and a small media noise Nm and exhibiting a large saturation magnetization Ms to have a good soft magnetic property. The magnetic backlayer is formed on a substrate; has a structure in that soft magnetic layers comprising iron and carbon as main components and nonmagnetic layers are alternately laminated; and has easy axes of magnetization in the in-plane direction of the film and the radius direction of the substrate.

Abstract: A magneto-optical recording medium which is capable of improving the floating stability and the travelling stability of an optical head of a slider type, by forming a lubricating protective layer having a transparent/translucent property on a surface on which the optical head is placed.

Abstract: A magneto-optical recording medium which is capable of improving the floating stability and the travelling stability of an optical head of a slider type, by forming a lubricating protective layer having a transparent/translucent property on a surface on which the optical head is placed.

Abstract: An electrode for a display device, including a laminate of an underlying layer, a conductive layer and a protective layer formed on a substrate in this order from the substrate side in such a manner that at least the conductive layer is completely covered by the protective layer, the underlying layer and the protective layer being composed of a metal which is hard to form an alloy or intermetallic compound with the metal constituting the conductive layer and has a low solid solubility to the conductive layer.

Abstract: An electrode for a display device, including a laminate of an underlying layer, a conductive layer and a protective layer formed on a substrate in this order from the substrate side in such a manner that at least the conductive layer is completely covered by the protective layer, the underlying layer and the protective layer being composed of a metal which is hard to form an alloy or intermetallic compound with the metal constituting the conductive layer and has a low solid solubility to the conductive layer.