Patents by Inventor Hiroyasu Kawano

Hiroyasu Kawano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130005408
    Abstract: Cellular phones include a power reception resonance coil arranged inside a first outer surface side of a housing, a power extracting unit for extracting power of an induction current of the power reception resonance coil, a magnetic core that has one end arranged inside the first outer surface side and the other end arranged inside a second outer surface side of the housing, and penetrates into the power reception resonance coil, and a printed board that is arranged in a space between the first outer surface and the second outer surface and has an area where circuit elements are not arranged on a periphery of the core.
    Type: Application
    Filed: September 12, 2012
    Publication date: January 3, 2013
    Applicant: FUJITSU LIMITED
    Inventors: Kiyoto MATSUI, Masakazu TAGUCHI, Hiroyasu KAWANO, Satoshi SHIMOKAWA, Akiyoshi UCHIDA
  • Publication number: 20120212069
    Abstract: A wireless power transmitting device includes a housing configured to have a feeding surface on which a power receiving device is to be placed; a power transmitting coil disposed inside the housing and configured to have a central axis that intersects with the feeding surface; and an alternating-current power supply configured to supply power to the power transmitting coil, wherein the feeding surface has raised and recessed portions in an area corresponding to a region inside an outer region of the power transmitting coil.
    Type: Application
    Filed: January 25, 2012
    Publication date: August 23, 2012
    Applicant: Fujitsu Limited
    Inventors: Hiroyasu KAWANO, Kiyoto Matsui, Masakazu Taguchi, Satoshi Shimokawa, Akiyoshi Uchida
  • Patent number: 8188466
    Abstract: A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, another electrode, an oxide layer between the electrodes, and an oxide layer in contact with the oxide layer between the oxide layer and the electrode. The oxide layer is switchable from the low-resistance state to the high-resistance state by donating oxygen ions to the oxide layer, and from the high-resistance state to the low-resistance state by accepting oxygen ions from the oxide layer. The oxide layer is switchable from the low-resistance state to the high-resistance state by accepting oxygen ions from the oxide layer, and from the high-resistance state to the low-resistance state by donating oxygen ions to the oxide layer.
    Type: Grant
    Filed: April 14, 2009
    Date of Patent: May 29, 2012
    Assignees: Fujitsu Limited, National University Corporation Nagoya Institute of Technology
    Inventors: Hiroyasu Kawano, Keiji Shono, Manabu Gomi, Takeshi Yokota
  • Publication number: 20110073833
    Abstract: A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.
    Type: Application
    Filed: December 6, 2010
    Publication date: March 31, 2011
    Applicant: FUJITSU LIMITED
    Inventors: Mizuhisa NIHEI, Hiroyasu Kawano
  • Patent number: 7867814
    Abstract: A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: January 11, 2011
    Assignee: Fujitsu Limited
    Inventors: Mizuhisa Nihei, Hiroyasu Kawano
  • Publication number: 20100200832
    Abstract: A resistance variable device is provided, which is capable of making a bipolar operation based on a predetermined operation principle. The resistance variable device is usable as a storage device. The resistance variable device has a laminated structure which include, for example, a first electrode, a second electrode, and a hole conductive layer between the first and second electrodes. The hole conductive layer gives anions to the second electrode, thereby changing its state from a reference electric field state to a positive electric field state. The hole conductive layer also receives anions from the second electrode, thereby changing its state from the positive electric field state to the reference electric field state.
    Type: Application
    Filed: February 18, 2010
    Publication date: August 12, 2010
    Applicant: FUJITSU LIMITED
    Inventors: Hiroyasu Kawano, Keiji Shono
  • Patent number: 7764160
    Abstract: The invention provides a variable-resistance element having a multilayer structure. The variable-resistance element includes, for example, a first electrode, a second electrode, and an oxygen ion migration layer disposed between the first electrode and the second electrode. In the oxygen ion migration layer, oxygen vacancy can be produced owing to oxygen ion migration, thereby forming a low resistance path. The variable-resistance element also includes an oxygen ion generation promoting layer disposed between the oxygen ion migration layer and the first electrode and held in contact with the oxygen ion migration layer.
    Type: Grant
    Filed: January 12, 2009
    Date of Patent: July 27, 2010
    Assignee: Fujitsu Limited
    Inventors: Hiroyasu Kawano, Keiji Shono
  • Publication number: 20090218565
    Abstract: A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, an electrode, an oxide layer between the electrodes, and an oxide layer in contact with the oxide layer between the oxide layer and the electrode. The oxide layer is switchable from the low-resistance state to the high-resistance state by donating oxygen ions to the oxide layer, and from the high-resistance state to the low-resistance state by accepting oxygen ions from the oxide layer. The oxide layer is switchable from the low-resistance state to the high-resistance state by accepting oxygen ions from the oxide layer, and from the high-resistance state to the low-resistance state by donating oxygen ions to the oxide layer.
    Type: Application
    Filed: April 14, 2009
    Publication date: September 3, 2009
    Applicants: FUJITSU LIMITED, NATIONAL UNIVERSITY CORPORATION NAGOYA INSTITUTE OF TECHNOLOGY
    Inventors: Hiroyasu Kawano, Keiji Shono, Manabu Gomi, Takeshi Yokota
  • Publication number: 20090121823
    Abstract: The invention provides a variable-resistance element having a multilayer structure. The variable-resistance element includes, for example, a first electrode, a second electrode, and an oxygen ion migration layer disposed between the first electrode and the second electrode. In the oxygen ion migration layer, oxygen vacancy can be produced owing to oxygen ion migration, thereby forming a low resistance path. The variable-resistance element also includes an oxygen ion generation promoting layer disposed between the oxygen ion migration layer and the first electrode and held in contact with the oxygen ion migration layer.
    Type: Application
    Filed: January 12, 2009
    Publication date: May 14, 2009
    Applicant: FUJITSU LIMITED
    Inventors: Hiroyasu Kawano, Keiji Shono
  • Publication number: 20080296551
    Abstract: A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.
    Type: Application
    Filed: July 17, 2008
    Publication date: December 4, 2008
    Applicant: FUJITSU LIMITED
    Inventors: Mizuhisa NIHEI, Hiroyasu KAWANO
  • Patent number: 7144641
    Abstract: This invention relates to a magnetic backlayer, and provides a magnetic backlayer giving a small spike noise spk and a small media noise Nm and exhibiting a large saturation magnetization Ms to have a good soft magnetic property. The magnetic backlayer is formed on a substrate; has a structure in that soft magnetic layers comprising iron and carbon as main components and nonmagnetic layers are alternately laminated; and has easy axes of magnetization in the in-plane direction of the film and the radius direction of the substrate.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: December 5, 2006
    Assignee: Fujitsu Limited
    Inventors: Hiroyasu Kawano, Takeshi Morikawa, Koji Matsumoto, Satomi Kubo
  • Publication number: 20060019122
    Abstract: A recording medium substrate has on a surface thereof a foundation film for electroless plating film formation, or has such a foundation film and an electroless plating film formed thereon. The foundation film includes an alloy containing one metallic element selected from Co and Cu, and an element having a greater ionization tendency than the metallic element. A recording medium may be manufactured, for example, using such a recording medium substrate.
    Type: Application
    Filed: November 18, 2004
    Publication date: January 26, 2006
    Inventors: Hiroyasu Kawano, Takahiro Umada, Mineo Moribe
  • Publication number: 20050118460
    Abstract: This invention relates to a magnetic backlayer, and provides a magnetic backlayer giving a small spike noise spk and a small media noise Nm and exhibiting a large saturation magnetization Ms to have a good soft magnetic property. The magnetic backlayer is formed on a substrate; has a structure in that soft magnetic layers comprising iron and carbon as main components and nonmagnetic layers are alternately laminated; and has easy axes of magnetization in the in-plane direction of the film and the radius direction of the substrate.
    Type: Application
    Filed: December 30, 2004
    Publication date: June 2, 2005
    Applicant: FUJITSU LIMITED
    Inventors: Hiroyasu Kawano, Takeshi Morikawa, Koji Matsumoto, Satomi Kubo
  • Patent number: 6625107
    Abstract: A magneto-optical recording medium which is capable of improving the floating stability and the travelling stability of an optical head of a slider type, by forming a lubricating protective layer having a transparent/translucent property on a surface on which the optical head is placed.
    Type: Grant
    Filed: July 22, 1999
    Date of Patent: September 23, 2003
    Assignee: Fujitsu Limited
    Inventor: Hiroyasu Kawano
  • Publication number: 20020031054
    Abstract: A magneto-optical recording medium which is capable of improving the floating stability and the travelling stability of an optical head of a slider type, by forming a lubricating protective layer having a transparent/translucent property on a surface on which the optical head is placed.
    Type: Application
    Filed: July 22, 1999
    Publication date: March 14, 2002
    Applicant: FUJITSU LIMITED
    Inventor: HIROYASU KAWANO
  • Patent number: 6334802
    Abstract: An electrode for a display device, including a laminate of an underlying layer, a conductive layer and a protective layer formed on a substrate in this order from the substrate side in such a manner that at least the conductive layer is completely covered by the protective layer, the underlying layer and the protective layer being composed of a metal which is hard to form an alloy or intermetallic compound with the metal constituting the conductive layer and has a low solid solubility to the conductive layer.
    Type: Grant
    Filed: November 21, 2000
    Date of Patent: January 1, 2002
    Assignee: Fujitsu Ltd.
    Inventors: Shin'ya Fukuta, Hiroyasu Kawano, Hideki Harada
  • Patent number: 6191530
    Abstract: An electrode for a display device, including a laminate of an underlying layer, a conductive layer and a protective layer formed on a substrate in this order from the substrate side in such a manner that at least the conductive layer is completely covered by the protective layer, the underlying layer and the protective layer being composed of a metal which is hard to form an alloy or intermetallic compound with the metal constituting the conductive layer and has a low solid solubility to the conductive layer.
    Type: Grant
    Filed: June 25, 1998
    Date of Patent: February 20, 2001
    Assignee: Fujitsu Limited
    Inventors: Shin'ya Fukuta, Hiroyasu Kawano, Hideki Harada