Abstract: An alkali metal cell is disclosed, including a substrate in which is formed an opening which penetrates from one face to the other face thereof; a first transparent substrate bonded to the other face of the substrate; and a second transparent substrate bonded to the one face of the substrate, wherein an alkali metal is sealed into a space surrounded by the first transparent substrate and the second transparent substrate in the opening of the substrate, wherein, in the substrate and the second transparent substrate, the space is enclosed by a bonding between a first bonding metal layer formed by a first bonding metal and a second bonding metal layer formed by a second bonding metal, and wherein the second bonding metal layer has a bonding temperature higher than that of the first bonding metal layer.

Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.

Abstract: A surface emitting laser array element is disclosed that includes a lower distributed bragg reflector (DBR) that is formed on a substrate, an active layer that is formed on the lower DBR, and an upper DBR that is formed on the active layer. A mesa and a dummy mesa that is arranged at a periphery of the mesa are created by removing a portion of the upper DBR. The mesa forms a surface emitting laser, and a wiring is connected to an electrode that is formed on an upper face of the mesa. The wiring includes a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring.

Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.

Abstract: A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.

Abstract: A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

Abstract: An alkali metal cell is disclosed, including a substrate in which is formed an opening which penetrates from one face to the other face thereof; a first transparent substrate bonded to the other face of the substrate; and a second transparent substrate bonded to the one face of the substrate, wherein an alkali metal is sealed into a space surrounded by the first transparent substrate and the second transparent substrate in the opening of the substrate, wherein, in the substrate and the second transparent substrate, the space is enclosed by a bonding between a first bonding metal layer formed by a first bonding metal and a second bonding metal layer formed by a second bonding metal, and wherein the second bonding metal layer has a bonding temperature higher than that of the first bonding metal layer.

Abstract: A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

Abstract: A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.

Abstract: A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.

Abstract: A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

Abstract: A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.

Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.

Abstract: A surface emitting laser array element is disclosed that includes a lower distributed bragg reflector (DBR) that is formed on a substrate, an active layer that is formed on the lower DBR, and an upper DBR that is formed on the active layer. A mesa and a dummy mesa that is arranged at a periphery of the mesa are created by removing a portion of the upper DBR. The mesa forms a surface emitting laser, and a wiring is connected to an electrode that is formed on an upper face of the mesa. The wiring includes a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring.

Abstract: A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.

Abstract: A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array including a plurality of columns of the surface-emission laser diode elements, each column including therein at least two surface-emission laser diode elements in a first direction. The surface-emission laser diode elements in a column are disposed with an equal interval in the first direction. The plural columns arc disposed in a second direction which is perpendicular to the first direction. An interval between two adjacent columns is larger in a central part than in a peripheral part of the two-dimensional array of the surface-emission laser diode elements in the second direction.

Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.

Abstract: A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.

Abstract: A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.

Abstract: A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.