Patents by Inventor Hiroyoshi Tanabe

Hiroyoshi Tanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12038685
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Grant
    Filed: May 24, 2023
    Date of Patent: July 16, 2024
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Hiroyoshi Tanabe, Toshiyuki Uno, Hiroshi Hanekawa, Daijiro Akagi
  • Publication number: 20240176225
    Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dbi of the absorbent layer satisfies a relationship of: dbi MAX?(i×6+1) nm?dbi?dbi MAX?(i×6?1) nm where the integer i is 0 or 1, and dbi MAX is represented by: d bi ? MAX ( nm ) = 13.53 2 ? n ? cos ? 6 ? ° { INT ( 0.58 1 - n 1 ) + 1 2 ? ? ? ( tan - 1 ( - k 2 1 - n 2 ) + 0.
    Type: Application
    Filed: January 19, 2024
    Publication date: May 30, 2024
    Applicant: AGC INC.
    Inventors: Hiroyoshi TANABE, Hiroshi HANEKAWA, Toshiyuki UNO
  • Patent number: 11914283
    Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: d M ? A ? X - ( i × 6 + 1 ) ? nm ? d ? d M ? A ? X - ( i × 6 - 1 ) ? nm where the integer i is 0 or 1, and dMAX is represented by: d MAX ( nm ) = 13.53 2 ? n ? cos ? 6 ? ° { INT ? ( 0.58 1 - n ) + 1 2 ? ? ? ( tan - 1 ( - k 1 - n ) + 0.64 ) } where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
    Type: Grant
    Filed: April 11, 2022
    Date of Patent: February 27, 2024
    Assignee: AGC INC.
    Inventors: Hiroyoshi Tanabe, Hiroshi Hanekawa, Toshiyuki Uno
  • Patent number: 11835852
    Abstract: A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film and a surface reflection enhancing film in this order from the substrate side. The relation of ((n?1)2+k2)1/2>((nABS?1)2+kABS2)1/2+0.03 is satisfied, nABS and kABS being a reflective index and an absorption coefficient of the absorber film at a wavelength of 13.53 nm, respectively, and n and k being a reflective index and an absorption coefficient of the surface reflection enhancing film at a wavelength of 13.53 nm, respectively.
    Type: Grant
    Filed: February 7, 2022
    Date of Patent: December 5, 2023
    Assignee: AGC Inc.
    Inventor: Hiroyoshi Tanabe
  • Publication number: 20230305383
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Application
    Filed: May 24, 2023
    Publication date: September 28, 2023
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO, Hiroshi HANEKAWA, Daijiro AKAGI
  • Patent number: 11698580
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: July 11, 2023
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Hiroyoshi Tanabe, Toshiyuki Uno, Hiroshi Hanekawa, Daijiro Akagi
  • Publication number: 20230185181
    Abstract: A reflective mask blank includes a substrate, and a multilayer reflective film configured to reflect EUV light, a phase shift film configured to shift a phase of the EUV light, and a semi-light-shielding film configured to shield the EUV light, which are formed on the substrate in this order. A reflectance at a wavelength of 13.5 nm when a surface of the semi-light-shielding film is irradiated with the EUV light is less than 7%. A reflectance at a wavelength of 13.5 nm when a surface of the phase shift film is irradiated with the EUV light is 9% or more and less than 15%.
    Type: Application
    Filed: February 9, 2023
    Publication date: June 15, 2023
    Applicant: AGC Inc.
    Inventor: Hiroyoshi TANABE
  • Publication number: 20220299862
    Abstract: A reflective mask blank for EUV lithography includes, in the following order, a substrate, a multilayer reflective film for reflecting EUV light, a phase shift film for shifting a phase of EUV light, and an etching mask film. The phase shift film is constituted of a ruthenium-based material containing ruthenium as a main component. The phase shift film has a film thickness of 20 nm or larger. The etching mask film is removable with a cleaning liquid comprising an acid or a base.
    Type: Application
    Filed: June 8, 2022
    Publication date: September 22, 2022
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO
  • Publication number: 20220236636
    Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: d M ? A ? X - ( i × 6 + 1 ) ? nm ? d ? d M ? A ? X - ( i × 6 - 1 ) ? nm where the integer i is 0 or 1, and dMAX is represented by: d M ? A ? X ( nm ) = 1 ? 3 . 5 ? 3 2 ? n ? cos ? 6 ? ° ? { INT ? ( 0 . 5 ? 8 1 - n ) + 1 2 ? ? ? ( tan - 1 ( - k 1 - n ) + 0 . 6 ? 4 ) } where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
    Type: Application
    Filed: April 11, 2022
    Publication date: July 28, 2022
    Applicant: AGC INC.
    Inventors: Hiroyoshi TANABE, Hiroshi HANEKAWA, Toshiyuki UNO
  • Publication number: 20220187699
    Abstract: A reflective mask blank for EUVL, includes a substrate; a multilayer reflective film reflecting EUV light; an absorber film absorbing EUV light; and an antireflective film. The multilayer reflective film, the absorber film, and the antireflective film are formed on or above the substrate in this order. The antireflective film includes an aluminum alloy containing aluminum (Al), and at least one metallic element selected from the group consisting of tantalum (Ta), chromium (Cr), titanium (Ti), niobium (Nb), molybdenum (Mo), tungsten (W), and ruthenium (Ru). The aluminum alloy further contains at least one element (X) selected from the group consisting of oxygen (O), nitrogen (N), and boron (B). An aluminum (Al) content of component of the aluminum alloy excluding the element (X) is greater than or equal to 3 at % and less than or equal to 95 at %.
    Type: Application
    Filed: December 3, 2021
    Publication date: June 16, 2022
    Applicant: AGC Inc.
    Inventor: Hiroyoshi TANABE
  • Publication number: 20220163879
    Abstract: A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film and a surface reflection enhancing film in this order from the substrate side. The relation of ((n?1)2+k2)1/2>((nABS?1)2+kABS2)1/2+0.03 is satisfied, nABS and kABS being a reflective index and an absorption coefficient of the absorber film at a wavelength of 13.53 nm, respectively, and n and k being a reflective index and an absorption coefficient of the surface reflection enhancing film at a wavelength of 13.53 nm, respectively.
    Type: Application
    Filed: February 7, 2022
    Publication date: May 26, 2022
    Applicant: AGC Inc.
    Inventor: Hiroyoshi TANABE
  • Patent number: 11281088
    Abstract: A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film and a surface reflection enhancing film in this order from the substrate side. The relation of ((n?1)2+k2)1/2>((nABS?1)2+kABS2)1/2+0.03 is satisfied, nABS and kABS being a reflective index and an absorption coefficient of the absorber film at a wavelength of 13.53 nm, respectively, and n and k being a reflective index and an absorption coefficient of the surface reflection enhancing film at a wavelength of 13.53 nm, respectively.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: March 22, 2022
    Assignee: AGC Inc.
    Inventor: Hiroyoshi Tanabe
  • Publication number: 20210349387
    Abstract: A reflective mask blank includes a substrate and, disposed on or above the substrate in the following order from the substrate side, a reflective layer, a protective layer, and an absorbent layer. The reflective layer is a multilayered reflective film includes a plurality of cycles, each cycle including a high-refractive-index layer and a low-refractive-index layer. The reflective layer includes one phase inversion layer which is either the high-refractive-index layer or the low-refractive-index layer each having a film thickness increased by ?d ([unit: nm]). The increase in film thickness ?d [unit: nm] of the phase inversion layer satisfies a relationship: (¼+m/2)×13.53?1.0??d?(¼+m/2)×13.53+1.0. The reflective layer and the absorbent layer satisfy a relationship: Tabs+80 tanh(0.037NML)?1.6 exp(?0.08Ntop)(NML?Ntop)2<140.
    Type: Application
    Filed: July 20, 2021
    Publication date: November 11, 2021
    Applicant: AGC Inc.
    Inventors: Hiroyoshi TANABE, Takahira MIYAGI
  • Publication number: 20210325772
    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
    Type: Application
    Filed: April 20, 2021
    Publication date: October 21, 2021
    Applicant: AGC Inc.
    Inventors: Hirotomo KAWAHARA, Hiroyoshi TANABE, Toshiyuki UNO, Hiroshi HANEKAWA, Daijiro AKAGI
  • Patent number: 10890842
    Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side, a reflective layer which reflects EUV light, and an absorber layer which absorbs EUV light. The absorber layer contains Sn as a main component and Ta in an amount of 25 at % or more.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: January 12, 2021
    Assignee: AGC INC.
    Inventor: Hiroyoshi Tanabe
  • Publication number: 20190384156
    Abstract: A reflective mask blank has a reflective layer to reflect EUV light and an absorber layer to absorb the EUV light, formed over a substrate in this order from a substrate side. The absorber layer contains Sn, and a preventive layer is provided over the absorber layer, to prevent oxidation of the absorber layer.
    Type: Application
    Filed: June 5, 2019
    Publication date: December 19, 2019
    Applicant: AGC Inc.
    Inventor: Hiroyoshi TANABE
  • Publication number: 20190086791
    Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side, a reflective layer which reflects EUV light, and an absorber layer which absorbs EUV light. The absorber layer contains Sn as a main component and Ta in an amount of 25 at % or more.
    Type: Application
    Filed: September 14, 2018
    Publication date: March 21, 2019
    Applicant: AGC INC.
    Inventor: Hiroyoshi TANABE
  • Publication number: 20180299766
    Abstract: A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film and a surface reflection enhancing film in this order from the substrate side. The relation of ((n?1)2+k2)1/2>((nABS?1)2+kABS2)1/2+0.03 is satisfied, nABS and kABS being a reflective index and an absorption coefficient of the absorber film at a wavelength of 13.53 nm, respectively, and n and k being a reflective index and an absorption coefficient of the surface reflection enhancing film at a wavelength of 13.53 nm, respectively.
    Type: Application
    Filed: April 16, 2018
    Publication date: October 18, 2018
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventor: Hiroyoshi TANABE
  • Patent number: 6150059
    Abstract: A photomask has a plurality of main holes which pass a prescribed light beam that is shone onto positions that make up a plurality of pattern parts, at locations that are opposite a plurality of pattern parts for said semiconductor device, this photomask also having a plurality of minute auxiliary holes, which pass a light beam of a degree that is not transferred at the time of exposure, these auxiliary holes being disposed between the main holes.
    Type: Grant
    Filed: October 29, 1998
    Date of Patent: November 21, 2000
    Assignee: NEC Corporation
    Inventors: Hiroyoshi Tanabe, Shinji Ishida, Tadao Yasuzato
  • Patent number: 5945237
    Abstract: In a halftone phase-shift mask, a phase-inverting light transmission part is formed inside the light-blocking part which blocks light that is radiated onto a transparent substrate so as to cover a shifter missing part defect, this phase-inverting light transmission part inverting the phase of light that passes through it with respect to light that passes through a light transmission part. The ratio between the surface areas of the phase-inverting light transmission part and the light-blocking part is established so that the transfer characteristics of the light-blocking part during exposure are substantially the same as those of the translucent phase-shift part.
    Type: Grant
    Filed: December 29, 1997
    Date of Patent: August 31, 1999
    Assignee: NEC Corporation
    Inventor: Hiroyoshi Tanabe