Abstract: Embodiments are disclosed for a method for restoring a wearable biological sensor. The method includes determining that a wearable biological marker sensor comprising a reference electrode is placed within a restoration apparatus. The restoration apparatus includes a correct reference electrode, a counter electrode, and a chloride solution. The reference electrode is in electrical contact with the correct reference electrode and the counter electrode through the chloride solution. The method additionally includes determining whether the reference electrode is degraded based on a voltage differential between the reference electrode and the correct reference electrode. The method also includes restoring the reference electrode, if the reference electrode is degraded, by applying a voltage to a circuit. The circuit includes the reference electrode and the counter electrode. Further, multiple chloride ions of the chloride solution bond with a plurality of silver atoms of the reference electrode.

Abstract: This copper alloy for electronic or electric devices includes: Mg: 0.15 mass % or greater and less than 0.35 mass %; and P: 0.0005 mass % or greater and less than 0.01 mass %, with a remainder being Cu and unavoidable impurities, wherein an amount of Mg [Mg] and an amount of P [P] in terms of mass ratio satisfy [Mg]+20×[P]<0.5, and 0.20<(NFJ2/(1?NFJ3))0.5?0.45 is satisfied in a case where a proportion of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to total grain boundary triple junctions is represented by NFJ3, and a proportion of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary is a random grain boundary, to the total grain boundary triple junctions is represented by NFJ2.

Abstract: The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a charge retaining section that temporarily retains electric charge converted by the photoelectric conversion section; and a first trench formed in a semiconductor substrate between the photoelectric conversion section and the charge retaining section, the first trench being higher than the photoelectric conversion section in a depth direction of the semiconductor substrate. Alternatively, the first trench is lower than the photoelectric conversion section and higher than the charge retaining section in the depth direction of the semiconductor substrate. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: A metal joined body has an iron base body and an aluminum base body that are joined together via a joint layer. The joint layer has a first layer composed of a first intermetallic compound formed on the iron base body side and a second layer composed of a second intermetallic compound formed on the aluminum base body side. The first layer has one or more first protrusions that merge integrally into the iron base body and extend in a pile shape into the first intermetallic compound. The second layer may have one or more second protrusions that are composed of a second intermetallic compound and extend in a columnar shape into the aluminum base body. The first intermetallic compound may contain Al5Fe2, and the second intermetallic compound may contain Al3Fe. The total thickness of the first layer and the second layer is, for example, 2 to 15 ?m.

Abstract: The present invention relates to a thermoplastic elastomer for carbon fiber reinforced plastic bonding lamination, which is contained in a layer to be laminated on a layer composed of a carbon-fiber reinforced plastic, wherein the thermoplastic elastomer for carbon fiber reinforced plastic bonding lamination contains a styrene-based thermoplastic elastomer and a polymer modified by an ?,?-unsaturated carboxylic acid, the styrene-based thermoplastic elastomer contains components (a) to (d), and a concentration of an ?,?-unsaturated carboxylic acid derived from the polymer modified by the ?,?-unsaturated carboxylic acid is 0.01 to 10% by mass.

Abstract: A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 0.01 mass ppm or more and 3.00 mass ppm or less of P, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 ?m or more, and, in a case where a measurement area of 1 mm2 or more is measured by an EBSD method at measurement intervals of 5 ?m steps, a measurement point where a CI value analyzed with data analysis software OIM is 0.1 or less is excluded, and a boundary where an orientation angle between adjacent pixels is 5° or more is regarded as a crystal grain boundary, a Kernel average misorientation (KAM) value is 1.50 or less.

Abstract: A metal base substrate of the present invention is a metal base substrate including a metal substrate, an insulating layer laminated on one surface of the metal substrate, and a circuit layer laminated on a surface of the insulating layer opposite to the metal substrate side, in which the circuit layer is made of a metal having a semi-softening temperature of 100° C. or higher and 150° C. or lower, the insulating layer contains a resin, and a relationship between a thickness t (?m) of the insulating layer and an elastic modulus E (GPa) of the insulating layer at 100° C. satisfies a following formula (1).

Abstract: A pure copper sheet has a composition including 99.96 mass% or more of Cu, 9.0 mass ppm or more and less than 100.0 mass ppm of a total content of Ag, Sn, and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 µm or more, the pure copper sheet has crystals in which crystal planes parallel to the rolled surface are a {022} plane, a {002} plane, a {113} plane, a {111} plane, and a {133} plane, and diffraction peak intensities of the individual crystal planes that are obtained by X-ray diffraction measurement by a 2?/? method on the rolled surface satisfy I {022}/(I {022} + I {002} + I {113} + I {111} + I {133}) ? 0.15, I {002}/I {111} ? 10.0, and I {002}/I {113} ? 15.0.

Abstract: A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 10.0 mass ppm or less of a total content of Pb, Se, and Te, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 ?m or more, an aspect ratio of the crystal grain on the rolled surface is 2.0 or less, and an average crystal grain size of the crystal grains on the rolled surface after a pressure heat treatment performed under conditions of a pressure of 0.6 MPa, a heating temperature of 850° C., and a retention time at the heating temperature of 90 minutes is 500 ?m or less.

Abstract: The present invention relates to a thermoplastic elastomer for carbon fiber reinforced plastic bonding lamination, which is contained in a layer to be laminated on a layer composed of a carbon-fiber reinforced plastic, wherein the thermoplastic elastomer for carbon fiber reinforced plastic bonding lamination contains a styrene-based thermoplastic elastomer and a polymer modified by an ?,?-unsaturated carboxylic acid, the styrene-based thermoplastic elastomer contains components (a) to (d), and a concentration of an ?,?-unsaturated carboxylic acid derived from the polymer modified by the ?,?-unsaturated carboxylic acid is 0.01 to 10% by mass.

Abstract: Aspects of the present disclosure relate to a method for fabricating an interconnection layer carrying structure. A carrier is provided. An organic layer is deposited on the carrier, wherein the organic layer includes a multi-layer wiring structure therein, and the uppermost surface is covered with an organic top layer. A sacrificial layer is deposited on the organic top layer. The carrier and the organic layer are diced together with the sacrificial layer.

Abstract: A Mg removal agent is composed of a chloride and copper oxide. The chloride contains at least Mg and one or more base metal elements selected from K, Na, and Ca. The chloride contains, for example, 0.2 to 60 mass % of MgCl2 and/or 40 to 99.8 mass % of KCl with respect to the chloride as a whole. The compounding ratio that is a mass ratio of the chloride to the copper oxide is, for example, 0.15 or more. The chloride may be a re-solidified salt or a mixed salt. At least a part of the chloride may be a mineral containing the base metal elements and Mg or a mineral-derived chloride. A preferred example of the Mg removal agent is granular flux introduced into the aluminum alloy molten metal.

Abstract: A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and the average value of KAM values is 3.0 or less.

Abstract: This pure copper plate or sheet contains 99.96% by mass or greater of Cu, in which when an average crystal grain size of crystal grains in a rolled surface is represented by X ?m and an amount of Ag is represented by Y mass ppm, an expression of 1×10?8?X?3Y?1?1×10?5 is satisfied, and when a ratio of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to all grain boundary triple junctions is defined as NFJE and a ratio of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary constituting the grain boundary triple junction is a random grain boundary, to all grain boundary triple junctions is defined as NFJ2, an expression of 0.30<(NFJ2/(1?NFJ3))0.5?0.48 is satisfied.

Abstract: A copper alloy has a composition including 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and a length LLB of a low-angle grain boundary and a subgrain boundary and a length LHB of a high-angle grain boundary have a relationship of LLB/(LLB+LHB)>20%.

Abstract: A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, an average crystal grain size is in a range of 10 ?m or more and 100 ?m or less, an electrical conductivity is 90% IACS or more, and a residual stress rate is 50% or more at 150° C. after 1000 hours.

Abstract: Interconnecting a first chip and a second chip by a bridge member includes a chip handler for handling the first chip and the second chip. Each of the first chip and the second chip has a first surface including a first set of terminals and a second surface opposite to the first surface. The chip handler has an opening and at least one support surface for supporting the first surfaces of the first chip and the second chip when the first chip and the second chip are mounted to the chip handler. A chip support member supports the first chip and the second chip from the second surfaces, and a bridge handler is provided for inserting the bridge member through the opening of the chip handler and for placing the bridge member onto the first sets of terminals of the first chip and the second chip.

Abstract: An integrated circuit package includes a substrate including at least one electrical connection to at least one of power or ground. The package further includes a bridge structure including at least one layer of conductive material and at least one layer of insulative material. The bridge structure is configured to be coupled to the substrate such that the conductive material is electrically connected to the at least one electrical connection. The bridge structure includes a side pad made of conductive material that is electrically connected to the at least one electrical connection. The side pad is in direct contact with the conductive material and with the insulative material of the bridge structure. The side pad forms an end face of the bridge structure such that the conductive material of the side pad is exposed.

Abstract: Aspects of the present disclosure relate to a method for fabricating an interconnection layer carrying structure. A carrier is provided. An organic layer is deposited on the carrier, wherein the organic layer includes a multi-layer wiring structure therein, and the uppermost surface is covered with an organic top layer. A sacrificial layer is deposited on the organic top layer. The carrier and the organic layer are diced together with the sacrificial layer.

Abstract: A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.