Abstract: A pure copper sheet has a composition including 99.96 mass% or more of Cu, 9.0 mass ppm or more and less than 100.0 mass ppm of a total content of Ag, Sn, and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 µm or more, the pure copper sheet has crystals in which crystal planes parallel to the rolled surface are a {022} plane, a {002} plane, a {113} plane, a {111} plane, and a {133} plane, and diffraction peak intensities of the individual crystal planes that are obtained by X-ray diffraction measurement by a 2?/? method on the rolled surface satisfy I {022}/(I {022} + I {002} + I {113} + I {111} + I {133}) ? 0.15, I {002}/I {111} ? 10.0, and I {002}/I {113} ? 15.0.

Abstract: A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 0.01 mass ppm or more and 3.00 mass ppm or less of P, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 ?m or more, and, in a case where a measurement area of 1 mm2 or more is measured by an EBSD method at measurement intervals of 5 ?m steps, a measurement point where a CI value analyzed with data analysis software OIM is 0.1 or less is excluded, and a boundary where an orientation angle between adjacent pixels is 5° or more is regarded as a crystal grain boundary, a Kernel average misorientation (KAM) value is 1.50 or less.

Abstract: A metal base substrate of the present invention is a metal base substrate including a metal substrate, an insulating layer laminated on one surface of the metal substrate, and a circuit layer laminated on a surface of the insulating layer opposite to the metal substrate side, in which the circuit layer is made of a metal having a semi-softening temperature of 100° C. or higher and 150° C. or lower, the insulating layer contains a resin, and a relationship between a thickness t (?m) of the insulating layer and an elastic modulus E (GPa) of the insulating layer at 100° C. satisfies a following formula (1).

Abstract: A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 10.0 mass ppm or less of a total content of Pb, Se, and Te, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 ?m or more, an aspect ratio of the crystal grain on the rolled surface is 2.0 or less, and an average crystal grain size of the crystal grains on the rolled surface after a pressure heat treatment performed under conditions of a pressure of 0.6 MPa, a heating temperature of 850° C., and a retention time at the heating temperature of 90 minutes is 500 ?m or less.

Abstract: The present invention relates to a thermoplastic elastomer for carbon fiber reinforced plastic bonding lamination, which is contained in a layer to be laminated on a layer composed of a carbon-fiber reinforced plastic, wherein the thermoplastic elastomer for carbon fiber reinforced plastic bonding lamination contains a styrene-based thermoplastic elastomer and a polymer modified by an ?,?-unsaturated carboxylic acid, the styrene-based thermoplastic elastomer contains components (a) to (d), and a concentration of an ?,?-unsaturated carboxylic acid derived from the polymer modified by the ?,?-unsaturated carboxylic acid is 0.01 to 10% by mass.

Abstract: Aspects of the present disclosure relate to a method for fabricating an interconnection layer carrying structure. A carrier is provided. An organic layer is deposited on the carrier, wherein the organic layer includes a multi-layer wiring structure therein, and the uppermost surface is covered with an organic top layer. A sacrificial layer is deposited on the organic top layer. The carrier and the organic layer are diced together with the sacrificial layer.

Abstract: A Mg removal agent is composed of a chloride and copper oxide. The chloride contains at least Mg and one or more base metal elements selected from K, Na, and Ca. The chloride contains, for example, 0.2 to 60 mass % of MgCl2 and/or 40 to 99.8 mass % of KCl with respect to the chloride as a whole. The compounding ratio that is a mass ratio of the chloride to the copper oxide is, for example, 0.15 or more. The chloride may be a re-solidified salt or a mixed salt. At least a part of the chloride may be a mineral containing the base metal elements and Mg or a mineral-derived chloride. A preferred example of the Mg removal agent is granular flux introduced into the aluminum alloy molten metal.

Abstract: A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and the average value of KAM values is 3.0 or less.

Abstract: This pure copper plate or sheet contains 99.96% by mass or greater of Cu, in which when an average crystal grain size of crystal grains in a rolled surface is represented by X ?m and an amount of Ag is represented by Y mass ppm, an expression of 1×10?8?X?3Y?1?1×10?5 is satisfied, and when a ratio of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to all grain boundary triple junctions is defined as NFJE and a ratio of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary constituting the grain boundary triple junction is a random grain boundary, to all grain boundary triple junctions is defined as NFJ2, an expression of 0.30<(NFJ2/(1?NFJ3))0.5?0.48 is satisfied.

Abstract: A copper alloy has a composition including 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and a length LLB of a low-angle grain boundary and a subgrain boundary and a length LHB of a high-angle grain boundary have a relationship of LLB/(LLB+LHB)>20%.

Abstract: A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, an average crystal grain size is in a range of 10 ?m or more and 100 ?m or less, an electrical conductivity is 90% IACS or more, and a residual stress rate is 50% or more at 150° C. after 1000 hours.

Abstract: Interconnecting a first chip and a second chip by a bridge member includes a chip handler for handling the first chip and the second chip. Each of the first chip and the second chip has a first surface including a first set of terminals and a second surface opposite to the first surface. The chip handler has an opening and at least one support surface for supporting the first surfaces of the first chip and the second chip when the first chip and the second chip are mounted to the chip handler. A chip support member supports the first chip and the second chip from the second surfaces, and a bridge handler is provided for inserting the bridge member through the opening of the chip handler and for placing the bridge member onto the first sets of terminals of the first chip and the second chip.

Abstract: An integrated circuit package includes a substrate including at least one electrical connection to at least one of power or ground. The package further includes a bridge structure including at least one layer of conductive material and at least one layer of insulative material. The bridge structure is configured to be coupled to the substrate such that the conductive material is electrically connected to the at least one electrical connection. The bridge structure includes a side pad made of conductive material that is electrically connected to the at least one electrical connection. The side pad is in direct contact with the conductive material and with the insulative material of the bridge structure. The side pad forms an end face of the bridge structure such that the conductive material of the side pad is exposed.

Abstract: A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.

Abstract: Aspects of the present disclosure relate to a method for fabricating an interconnection layer carrying structure. A carrier is provided. An organic layer is deposited on the carrier, wherein the organic layer includes a multi-layer wiring structure therein, and the uppermost surface is covered with an organic top layer. A sacrificial layer is deposited on the organic top layer. The carrier and the organic layer are diced together with the sacrificial layer.

Abstract: A metal purifying method having: a local heating step of heating an aluminum-based molten metal in a first region on a molten metal surface of the aluminum-based molten metal; and a local low pressure step of lowering the pressure in a second region on the molten metal surface to a pressure lower than the pressure in the first region. The second region is different from the first region. This allows a specific element to be vaporized from the second region to purify the aluminum-based molten metal. The specific element is one or more of Zn, Mg, or Pb having a saturated vapor pressure higher than that of Al. This is effective not only in a purifying method for removing a specific element from an aluminum-based molten metal but also in a method of recovering a specific element, which can be a resource, from an aluminum-based molten metal.

Abstract: This copper alloy for electronic or electric devices contains 100 mass ppm or greater and 400 mass ppm or less of Mg, 5 mass ppm or greater and 20 mass ppm or less of Ag, and less than 5 mass ppm of P with a balance being Cu and inevitable impurities, in which when a ratio of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to all grain boundary triple junctions is defined as NFJ3 and a ratio of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary constituting the grain boundary triple junction is a random grain boundary, to all grain boundary triple junctions is defined as NFJ2, an expression of 0.22<(NFJ2/(1?NFJ3))0.5?0.45 is satisfied.

Abstract: A method of fabricating a connection structure is disclosed. The method includes providing a substrate that has a top surface and includes a set of pads for soldering, each of which has a pad surface exposed from the top surface of the substrate. The method also includes applying a surface treatment to a part of the top surface of the substrate close to the pads and the pad surface of each pad so as to make at least the part of the top surface and the pad surfaces of the pads rougher. The surface treatment includes sandblasting.

Abstract: A combustion ash handling method of handling combustion ash discharged from a combustion furnace that combusts a petroleum-based fuel includes: separating the combustion ash into a heavy component and a light component by a dry-type separation technique; feeding the light component to the combustion furnace as a fuel; and recovering the heavy component. A metal such as vanadium is separated and extracted from the heavy component of the combustion ash.

Abstract: An article sorting facility includes a plurality of storage members each configured to store one or more articles, a plurality of article transport vehicles each capable of traveling in at least a portion of a preset travel lane with one or more support members on board, each support member being configured to support one or more articles; a plurality of work areas each configured to allow work to be performed to transfer articles between one or more storage members and at least one of the one or more support members on board an article transport vehicle in the travel lane, wherein each of the work areas is located adjacent to one or more storage members and to the travel lane, wherein the plurality of work areas are arranged one adjacent to another along the travel lane, and wherein two or more article transport vehicles are in the travel lane simultaneously to travel in a line.