Abstract: A semiconductor apparatus includes: a semiconductor substrate; a diffusion layer; a first depletion prevention region; a channel stopper electrode, a monitor electrode and an insulating film. The inner edge portion of the monitor electrode is positioned between the diffusion layer and the first depletion prevention region. A distance between the outer edge portion of the channel stopper electrode and the inner edge portion of the monitor electrode is a first distance. A distance between the diffusion layer and the first depletion prevention region is a second distance. The first and second distances are set so that a discharge voltage between the channel stopper electrode and the monitor electrode becomes greater than an avalanche breakdown voltage at a PN junction portion of the diffusion layer and the semiconductor substrate.

Abstract: Provided is a semiconductor device capable of suppressing increase in size of a package and adjusting an amount of negative feedback. A power module as a semiconductor device includes an IGBT which is a switching element and a free wheel diode (FWD) parallelly connected to the switching element. The IGBT has, on a surface thereof, an emitter electrode and a gate electrode of the IGBT and a conductive pattern insulated from the emitter electrode and the gate electrode. The FWD has, on a surface thereof, an anode electrode of the FWD and a conductive pattern insulated from the anode electrode.

Abstract: Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ? in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.

Abstract: An airline ticket sales system having a stock recording unit retaining a stock of flights, and a destination candidate extraction unit including: receiving an input of at least one condition from a user via an information processing terminal, information about a destination airport being excluded from the condition; acquiring, from the stock recording unit, information about outbound candidate flights and inbound candidate flights satisfying the condition; extracting, as candidate airports, a predetermined number from airports common to arrival airports of the outbound candidate flights and departure airports of the inbound candidate flights; selecting, based on a predetermined criterion, one from round-trip candidate flights composed of combinations of the outbound candidate flights and the inbound candidate flights among the departure airports of the outbound candidate flights specified by the condition and the respective candidate airports; and regarding the selected one as a to-be-sold round-trip flight.

Abstract: An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a ceramic substrate, a first piezoelectric layer positioned on the ceramic substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the ceramic substrate, a second piezoelectric layer positioned on the ceramic substrate, and an interdigital transducer electrode on the second piezoelectric layer.

Abstract: An object is to provide a technique capable of improving heat dissipation while maintaining the workability of a product in a semiconductor device. A semiconductor device includes power chips, control chips configured to control the power chips, power side terminals, control side terminals, and a mold resin covering the power chips, the control chips, one ends side of the power side terminals, and one ends side of the control side terminals. An other ends side of the power side terminals and an other ends side of the control side terminals protrude horizontally from a side surface of the mold resin and bend downward at middle parts thereof. Of the power side terminals and the control side terminals, only on the other ends side of the power side terminals, heat dissipation portions protruding in a direction approaching or away from the mold resin from portions bent downward are formed.

Abstract: A semiconductor device includes: a semiconductor chip including a field effect transistor for switching; a die pad on which the semiconductor chip is mounted via a first bonding material; a lead electrically connected to a pad for source of the semiconductor chip through a metal plate; a lead coupling portion formed integrally with the lead; and a sealing portion for sealing them. A back surface electrode for drain of the semiconductor chip and the die pad are bonded via the first bonding material, the metal plate and the pad for source of the semiconductor chip are bonded via a second bonding material, and the metal plate and the lead coupling portion are bonded via a third bonding material. The first, second, and third bonding materials have conductivity, and an elastic modulus of each of the first and second bonding materials is lower than that of the third bonding material.

Abstract: An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a ceramic substrate, a first piezoelectric layer positioned on the ceramic substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the ceramic substrate, a second piezoelectric layer positioned on the ceramic substrate, and an interdigital transducer electrode on the second piezoelectric layer.

Abstract: A delay line for radio frequency circuits comprises a piezoelectric substrate, a transmission single phase unidirectional transducer (SPUDT) disposed on the piezoelectric substrate, and a receive SPUDT disposed on the piezoelectric substrate and separated from the transmission SPUDT in a direction of transmission of a main acoustic wave mode utilized by the transmission SPUDT.

Abstract: The invention enables generation of engineering data, for subsequent retrieval and implementation for a batch process. In an embodiment, the invention comprises (i) executing a processor implemented unit model editor, (ii) generating a unit model that includes data corresponding to a unit represented within a P&ID; (iiia) generating a control logic drawing corresponding to the unit represented within the P&ID, and (iii-b) generating a graphic drawing corresponding to the unit represented within the P&ID—both based on data parsed from the unit model, (iv) executing an operation sequence editor, (v) generating one or more operation sequences corresponding to the unit, and (vi) generating a wrapper object that includes the generated control logic drawing, the generated graphic drawing and the generated one or more operation sequences. Each of the control logic drawing, graphic drawing, and operation sequences may be implemented on formats that are different from the others.

Abstract: Information related to a vehicle can be displayed by projecting an image based on the information on a road surface or the like. An image projection apparatus that projects an image includes: a sensor unit that acquires information related to a vehicle; and an image projection unit that projects the image based on the information acquired by the sensor unit.

Abstract: A trigger type liquid ejector includes an ejector body and nozzle, the ejector body includes a vertical supply pipe, ejection barrel, trigger, piston, and cylinder, a recovery passage brings the cylinder in communication with the vertical supply pipe via a space between a piston body and a piston guide of the cylinder formed in the ejector body, the vertical supply pipe has a lower inner tube part where the recovery passage opens, the trigger type liquid ejector further includes an upright and inverted posture adaptor attached into the lower inner tube part where communication between the recovery passage and an inside of a container body is blocked, and a communication passage brings the recovery passage in communication with the inside of the container body forms between an outer circumferential surface of the upright and inverted posture adaptor and an inner circumferential surface of the lower inner tube part.

Abstract: A bulk acoustic wave resonator is disclosed. The bulk acoustic wave resonator can include a ceramic substrate, and a piezoelectric layer on the ceramic substrate. The bulk acoustic wave resonator can also include first and second electrodes positioned on opposing sides of the piezoelectric layer. The bulk acoustic wave resonator can also include passivation layers that includes a first passivation layer and a second passivation layer. The first passivation layer can be positioned between the ceramic substrate and the first electrode. The second electrode can be positioned between the piezoelectric layer and the second passivation layer. The bulk acoustic wave resonator can further include a frame structure along an edge of an active region of the bulk acoustic wave resonator.

Abstract: A semiconductor device includes: a first semiconductor integrated circuit including at least a first terminal and a second terminal; a first lead frame connected to the first terminal; a second lead frame connected to the second terminal; and a mold resin covering the first semiconductor integrated circuit. The mold resin further covers the first lead frame with a portion of the first lead frame being exposed. The mold resin further covers the second lead frame with a tip of the second lead frame opposite to the second terminal being exposed. The mold resin includes a recess, and the recess is opened to expose only the portion and the mold resin.

Abstract: Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ? in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.

Abstract: A laminated film including an adhesive layer peelably laminated on a base film is shear cut using an upper roller including specific upper blades arranged at a pitch of 0.5 mm or less for slitting. The upper blade includes one side surface constituting a blade edge being a flat surface and the other side surface having a first ridge and a second ridge from the blade edge aide. A laminated tape including an adhesive layer peelably laminated on a base film is slit by slitting using this upper blade to a tape width of 0.5 mm or less without the base film and the adhesive layer peeling apart and with suppressed protrusion of the adhesive layer in the slit tape.

Abstract: An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a glass substrate, a first piezoelectric layer positioned on the glass substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the glass substrate, a second piezoelectric layer positioned on the glass substrate, and an interdigital transducer electrode on the second piezoelectric layer.

Abstract: Information related to a vehicle can be displayed by projecting an image based on the information on a road surface or the like. An image projection apparatus that projects an image includes: a sensor unit that acquires information related to a vehicle; and an image projection unit that projects the image based on the information acquired by the sensor unit.

Abstract: There are provided a method of producing a placenta-like organoid that can be subjected to long-term culture, a placenta-like organoid that is produced by the above producing method, and a production or test kit that contains the above placenta-like organoid. The method of producing a placenta-like organoid includes subjecting a pluripotent stem cell to suspension culture in the presence of a bone morphogenetic protein BMP4.

Abstract: A semiconductor device includes: a package to seal a semiconductor element; a lead frame having one end portion connected to the semiconductor element and the other end portion protruding from a side surface of the package; a plurality of threaded holes formed in the package to enable the package to be fixed to the substrate; and a resin part capable of closing each of the plurality of threaded holes. A type name of the semiconductor device is represented by open and closed states of the respective threaded holes.