Patents by Inventor Hiroyuki Yamashita

Hiroyuki Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210131861
    Abstract: A blade vibration monitoring device includes: a rotary machine including a rotating shaft that extends along an axis, and a plurality of moving blades having moving blade bodies that extend radially outward in a radial direction from the rotating shaft, and shrouds that are provided at tips of the moving blade bodies and are in contact with each other in a circumferential direction; and a sensor that is provided on the outside of the shroud in the radial direction to face the shroud, and is configured to detect a change in an outer circumferential surface of the shroud, in which the outer circumferential surface of the shroud includes a first surface, and a second surface which is disposed to be interposed between the first surfaces from both sides in the circumferential direction, and in which a detection signal from the sensor is different from that of the first surface.
    Type: Application
    Filed: May 30, 2018
    Publication date: May 6, 2021
    Inventors: Hiroyuki YAMASHITA, Kazuhiro TAMURA, Keiichiro MIYAJIMA
  • Publication number: 20210122730
    Abstract: Described herein are glucocorticoid receptor modulators and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for the treatment of cancer and hypercortisolism.
    Type: Application
    Filed: April 10, 2018
    Publication date: April 29, 2021
    Inventors: Xiaohui DU, John EKSTEROWICZ, Valeria R. FANTIN, Yosup REW, Daqing SUN, Qiuping YE, Haiying ZHOU, Hiroyuki KAWAI, Jared MOORE, Johnny PHAM, Kejia WU, Liusheng ZHU, Dennis YAMASHITA
  • Publication number: 20210118906
    Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.
    Type: Application
    Filed: December 29, 2020
    Publication date: April 22, 2021
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Keiichi SAWA, Kazuhiro MATSUO, Kazuhisa MATSUDA, Hiroyuki YAMASHITA, Yuta SAITO, Shinji MORI, Masayuki TANAKA, Kenichiro TORATANI, Atsushi TAKAHASHI, Shouji HONDA
  • Publication number: 20210106101
    Abstract: In this molded surface fastener, plural engaging elements having a stem portion and an engaging head portion formed integrally on the stem portion are standing on the base portion, at least one pawl portion having a pawl width dimension narrower than a width dimension at a boundary between the stem portion and the engaging head portion is protruded on an outer peripheral edge part of the engaging head portion, and a back surface of pawl of the pawl portion is formed at different angles with respect to a back surface of head portion of the engaging head portion. Such a molded surface fastener of the present invention has a substantial engaging force with respect to a female surface fastener and can make a texture of its surface comfortable.
    Type: Application
    Filed: December 21, 2020
    Publication date: April 15, 2021
    Inventors: Yoshiyuki Fukuhara, Hiroyuki Yamashita, Takahiro Fuse, Isamu Michihata, Yui Hashimoto
  • Patent number: 10974511
    Abstract: A liquid discharge apparatus includes a head including a nozzle plate having a plurality of nozzles lined in a row and configured to discharge a liquid, a conveyor configured to convey the liquid application target, and a liquid receptacle configured to receive the liquid discharged from the head. The conveyor defines a conveyance passage of a liquid application target to which the head applies the liquid. The liquid receptacle has an opening through which the liquid discharged from the head passes. A longitudinal direction of the opening is along a movement direction of the liquid application target. A width of the opening is greater than a width of the liquid application target in a direction orthogonal to the movement direction.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: April 13, 2021
    Assignee: RICOH COMPANY, LTD.
    Inventors: Shinya Tanaka, Hiroyuki Yamashita
  • Patent number: 10923487
    Abstract: A semiconductor memory device includes a channel layer and a gate electrode. A first insulating layer is between the semiconductor layer and the gate electrode. A second insulating layer is between the first insulating layer and the gate electrode. A storage region is between the first insulating layer and the second insulating layer. The storage region comprises metal or semiconductor material. A coating layer comprises silicon and nitrogen and surrounds the storage region. The coating layer is between the storage region and the second insulating layer and between the storage region and the first insulating layer.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: February 16, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Hiroyuki Yamashita, Shinji Mori, Keiichi Sawa, Kazuhiro Matsuo, Kazuhisa Matsuda, Yuta Saito, Atsushi Takahashi, Masayuki Tanaka
  • Patent number: 10910401
    Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: February 2, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Keiichi Sawa, Kazuhiro Matsuo, Kazuhisa Matsuda, Hiroyuki Yamashita, Yuta Saito, Shinji Mori, Masayuki Tanaka, Kenichiro Toratani, Atsushi Takahashi, Shouji Honda
  • Publication number: 20210013225
    Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.
    Type: Application
    Filed: March 5, 2020
    Publication date: January 14, 2021
    Applicant: Kioxia Corporation
    Inventors: Yuta SAITO, Shinji MORI, Atsushi TAKAHASHI, Toshiaki YANASE, Keiichi SAWA, Kazuhiro MATSUO, Hiroyuki YAMASHITA
  • Publication number: 20200385149
    Abstract: A flying object includes a housing formed by combining a plurality of panels having reinforced fibers and a matrix resin, and a low melting point member having a lower melting point than that of at least the reinforced fiber, wherein the housing is configured to be breakable according to a change of the low melting point member during either of fusion or sublimation.
    Type: Application
    Filed: May 4, 2020
    Publication date: December 10, 2020
    Inventors: Tetsuya Gomi, Hiroyuki Yamashita, Takahira Kawata, Koh Kamachi
  • Publication number: 20200373328
    Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.
    Type: Application
    Filed: August 14, 2020
    Publication date: November 26, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Yuta SAITO, Shinji MORI, Keiichi SAWA, Kazuhisa MATSUDA, Kazuhiro MATSUO, Hiroyuki YAMASHITA
  • Publication number: 20200305558
    Abstract: Provided is a molded surface fastener capable of stably having high engaging strength with respect to a loop member. The molded surface fastener of the present invention includes a base portion and a plurality of engaging elements provided with a stem portion and an engaging portion, and is formed of synthetic resin containing lubricant at 0.15 wt % or more and 1.00 wt % or less. A top end surface of the engaging element is formed to be flat, and the engaging portion has a hanging portion which hangs down obliquely downward toward the base portion.
    Type: Application
    Filed: March 24, 2020
    Publication date: October 1, 2020
    Inventors: Makoto Takekawa, Yoshiyuki Fukuhara, Hiroyuki Yamashita, Kyoichi Yuki
  • Publication number: 20200295035
    Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.
    Type: Application
    Filed: September 3, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Keiichi SAWA, Kazuhiro MATSUO, Kazuhisa MATSUDA, Hiroyuki YAMASHITA, Yuta SAITO, Shinji MORI, Masayuki TANAKA, Kenichiro TORATANI, Atsushi TAKAHASHI, Shouji HONDA
  • Patent number: 10777573
    Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: September 15, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Yuta Saito, Shinji Mori, Keiichi Sawa, Kazuhisa Matsuda, Kazuhiro Matsuo, Hiroyuki Yamashita
  • Patent number: 10737520
    Abstract: There is provided a thermal transfer sheet having satisfactory transferability when a transfer layer is transferred on a transfer receiving article over a wide energy range. A thermal transfer sheet 100 for obtaining a thermal transfer image-receiving sheet includes a substrate 1 and a transfer layer 10 provided on the substrate, wherein the transfer layer 10 has a layered structure in which two or more layers are layered, the transfer layer 10 includes at least a receiving layer 2, the layer located nearest to the substrate 1 of the layers constituting the transfer layer 10 is the receiving layer 2, and the receiving layer 2 contains a cellulosic resin.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: August 11, 2020
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Yasushi Yoneyama, Hiroyuki Yamashita
  • Patent number: 10723158
    Abstract: A line head type liquid discharge apparatus includes a treatment liquid applying device, a first discharging device, a heating device, and a second discharging device. The treatment liquid applying device applies a treatment liquid to a non-permeable base material. The first discharging device discharges a first ink containing an organic solvent onto the non-permeable base material to which the treatment liquid has been applied. The heating device heats, with an infrared ray, the non-permeable base material onto which the first ink has been discharged. The second discharging device discharges a second ink containing an organic solvent onto the non-permeable base material heated by the heating device. A content ratio of the organic solvent contained in the first ink is higher than a content ratio of the organic solvent contained in the second ink.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: July 28, 2020
    Assignee: Ricoh Company, Ltd.
    Inventors: Naohiro Toda, Takuma Nakamura, Yukie Inoue, Masaya Hamaguchi, Hiroyuki Yamashita
  • Publication number: 20200207087
    Abstract: A liquid discharge apparatus includes a head including a nozzle plate having a plurality of nozzles lined in a row and configured to discharge a liquid, a conveyor configured to convey the liquid application target, and a liquid receptacle configured to receive the liquid discharged from the head. The conveyor defines a conveyance passage of a liquid application target to which the head applies the liquid. The liquid receptacle has an opening through which the liquid discharged from the head passes. A longitudinal direction of the opening is along a movement direction of the liquid application target. A width of the opening is greater than a width of the liquid application target in a direction orthogonal to the movement direction.
    Type: Application
    Filed: December 16, 2019
    Publication date: July 2, 2020
    Inventors: Shinya TANAKA, Hiroyuki YAMASHITA
  • Publication number: 20200196716
    Abstract: In this molded surface fastener, an engaging element includes a columnar stem portion, and micro pawl portions protruding outward from an upper end outer peripheral edge of the stem portion in a plan view of the engaging elements. A pawl width dimension of the micro pawl portions is smaller than a line segment connecting two points on the upper end outer peripheral edge of the stem portion. The micro pawl portions protrude toward a base portion. This molded surface fastener has a high peel strength and a shear strength with respect to a female surface fastener.
    Type: Application
    Filed: March 3, 2020
    Publication date: June 25, 2020
    Inventors: Yoshiyuki Fukuhara, Hiroyuki Yamashita, Makoto Takekawa, Takahiro Fuse
  • Publication number: 20200196715
    Abstract: In this molded surface fastener, plural engaging elements having a stem portion and an engaging head portion formed integrally on the stem portion are standing on the base portion, at least one pawl portion having a pawl width dimension narrower than a width dimension at a boundary between the stem portion and the engaging head portion is protruded on an outer peripheral edge part of the engaging head portion, and a back surface of pawl of the pawl portion is formed at different angles with respect to a back surface of head portion of the engaging head portion. Such a molded surface fastener of the present invention has a substantial engaging force with respect to a female surface fastener and can make a texture of its surface comfortable.
    Type: Application
    Filed: March 3, 2020
    Publication date: June 25, 2020
    Inventors: Yoshiyuki Fukuhara, Hiroyuki Yamashita, Takahiro Fuse, Isamu Michihata, Yui Hashimoto
  • Publication number: 20200107617
    Abstract: Provided is a molding apparatus used for manufacturing a molded surface fastener wherein a die wheel driving rotationally has a concentric double cylinder structure provided with an outer side cylindrical body that has provided therethrough a plurality of penetrating holes, and an inner side cylindrical body that has formed, in the outer peripheral surface thereof, a plurality of grooved portions, the grooved portions located in the inner side cylindrical body include a use grooved portion that intersects with the penetrating hole of the outer side cylindrical body and a non-use grooved portion that is covered by the inner peripheral surface of the outer side cylindrical body. By using this molding apparatus obtained is a molded surface fastener in which a plurality of types of engaging elements having different shapes in a plan view are arranged cyclically in a reference direction.
    Type: Application
    Filed: April 3, 2017
    Publication date: April 9, 2020
    Inventors: Makoto Takekawa, Yoshiyuki Fukuhara, Hiroyuki Yamashita, Isamu Michihata, Yui Hashimoto
  • Publication number: 20200091165
    Abstract: A semiconductor memory device includes a channel layer and a gate electrode. A first insulating layer is between the semiconductor layer and the gate electrode. A second insulating layer is between the first insulating layer and the gate electrode. A storage region is between the first insulating layer and the second insulating layer. The storage region comprises metal or semiconductor material. A coating layer comprises silicon and nitrogen and surrounds the storage region. The coating layer is between the storage region and the second insulating layer and between the storage region and the first insulating layer.
    Type: Application
    Filed: February 27, 2019
    Publication date: March 19, 2020
    Inventors: Hiroyuki YAMASHITA, Shinji MORI, Keiichi SAWA, Kazuhiro MATSUO, Kazuhisa MATSUDA, Yuta SAITO, Atsushi TAKAHASHI, Masayuki TANAKA