Patents by Inventor Hisanori Yokura
Hisanori Yokura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11054326Abstract: In a physical quantity sensor, a first substrate has a recess depressed from a second surface to provide a thin film section adjacent to a first surface, and a second substrate has a first surface bonded to the first surface of the first substrate, and has a hollow depressed from the first surface and facing the recess. The recess and the hollow have such sizes that a projected line defined by projecting an end of a bottom surface in the recess to the first surface of the first substrate surrounds an open end of the hollow. When the thin film section is displaced toward the hollow, a maximum tensile stress is generated at a position on a rear surface of the thin film section intersecting an extended line along a normal direction to the first surface of the first substrate and passing through the open end of the hollow.Type: GrantFiled: July 15, 2019Date of Patent: July 6, 2021Assignee: DENSO CORPORATIONInventors: Yutaka Hayakawa, Hisanori Yokura
-
Publication number: 20200399118Abstract: A electronic device includes a substrate, a first metal film, an insulating film, a second metal film, and a third metal film. The substrate has one surface. The first metal film is disposed on the one surface. The insulating film is disposed on the one surface in a state covering the first metal film. The insulating film has a contact hole exposing the first metal film. The second metal film is disposed on a portion of the first metal film exposed from the contact hole and a periphery of the contact hole. The third metal film is made of gold and disposed on the second metal film. The first metal film, the second metal film, and the third metal film are stacked as a pad portion.Type: ApplicationFiled: September 3, 2020Publication date: December 24, 2020Inventors: Yutaka HAYAKAWA, Hisanori YOKURA
-
Publication number: 20200095115Abstract: A semiconductor device includes a first substrate having a first surface, and a second substrate having a second surface. A part of the second substrate is bonded to a part of the first surface with atmospheric pressure plasma. The semiconductor device further includes an oxide film disposed on the first surface of the first substrate, and a protection film layered on a surface of the oxide film opposite to the first substrate.Type: ApplicationFiled: November 27, 2019Publication date: March 26, 2020Inventors: Takahiro KAWANO, Hisanori YOKURA, Tsuyoshi FUJIWARA
-
Publication number: 20190339147Abstract: In a physical quantity sensor, a first substrate has a recess depressed from a second surface to provide a thin film section adjacent to a first surface, and a second substrate has a first surface bonded to the first surface of the first substrate, and has a hollow depressed from the first surface and facing the recess. The recess and the hollow have such sizes that a projected line defined by projecting an end of a bottom surface in the recess to the first surface of the first substrate surrounds an open end of the hollow. When the thin film section is displaced toward the hollow, a maximum tensile stress is generated at a position on a rear surface of the thin film section intersecting an extended line along a normal direction to the first surface of the first substrate and passing through the open end of the hollow.Type: ApplicationFiled: July 15, 2019Publication date: November 7, 2019Inventors: Yutaka HAYAKAWA, Hisanori YOKURA
-
Patent number: 10468322Abstract: A semiconductor device includes: a first substrate having connectors at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connectors; through-electrodes respectively arranged at through-holes and electrically connected with the connectors; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.Type: GrantFiled: February 23, 2017Date of Patent: November 5, 2019Assignee: DENSO CORPORATIONInventors: Kazuyuki Kakuta, Hisanori Yokura, Minoru Murata
-
Publication number: 20190051575Abstract: A semiconductor device includes: a first substrate having connection parts at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connection parts; through-electrodes respectively arranged at through-holes and electrically connected with the connection parts; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.Type: ApplicationFiled: February 23, 2017Publication date: February 14, 2019Inventors: Kazuyuki KAKUTA, Hisanori YOKURA, Minoru MURATA
-
Patent number: 9944515Abstract: A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1° C./sec or smaller until a temperature of the substrate increases to 700° C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.Type: GrantFiled: February 3, 2016Date of Patent: April 17, 2018Assignee: DENSO CORPORATIONInventors: Yutaka Hayakawa, Hisanori Yokura
-
Patent number: 9835507Abstract: A dynamic quantity sensor includes a first substrate and a second substrate. The first substrate has one surface, another surface opposite to the one surface, and a depressed portion defining a thin portion. The second substrate has one surface attached to the first substrate and a recessed portion disposed corresponding to the depressed portion. At least a part of a first projection line obtained by projecting the recessed portion is disposed outside of a second projection line obtained by projecting a boundary line between side walls of the depressed portion and the thin portion. The thin portion disposed inside the periphery of the recessed portion provides a film portion which is displaceable corresponding to a physical quantity applied to the film portion, and a region sandwiched between the film portion and a portion connected to the periphery of the recessed portion provides a stress release region.Type: GrantFiled: August 1, 2014Date of Patent: December 5, 2017Assignee: DENSO CORPORATIONInventors: Takahiro Kawano, Takashi Katsumata, Hisanori Yokura, Shoji Ozoe, Hiroaki Tanaka
-
Publication number: 20170305742Abstract: A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1° C./sec or smaller until a temperature of the substrate increases to 700° C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.Type: ApplicationFiled: February 3, 2016Publication date: October 26, 2017Inventors: Yutaka HAYAKAWA, Hisanori YOKURA
-
Patent number: 9664768Abstract: A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.Type: GrantFiled: April 17, 2013Date of Patent: May 30, 2017Assignee: DENSO CORPORATIONInventors: Takamoto Furuichi, Toshifumi Yano, Hisanori Yokura
-
Publication number: 20160187215Abstract: A dynamic quantity sensor includes a first substrate and a second substrate. The first substrate has one surface, another surface opposite to the one surface, and a depressed portion defining a thin portion. The second substrate has one surface attached to the first substrate and a recessed portion disposed corresponding to the depressed portion. At least a part of a first projection line obtained by projecting the recessed portion is disposed outside of a second projection line obtained by projecting a boundary line between side walls of the depressed portion and the thin portion. The thin portion disposed inside the periphery of the recessed portion provides a film portion which is displaceable corresponding to a physical quantity applied to the film portion, and a region sandwiched between the film portion and a portion connected to the periphery of the recessed portion provides a stress release region.Type: ApplicationFiled: August 1, 2014Publication date: June 30, 2016Applicant: DENSO CORPORATIONInventors: Takahiro KAWANO, Takashi KATSUMATA, Hisanori YOKURA, Shoji OZOE, Hiroaki TANAKA
-
Patent number: 9349644Abstract: In a method for producing a semiconductor device having a through electrode structure, a masking material is formed so as to bridge over a through hole formed in a second semiconductor substrate, and a hole is formed in the masking material at a position corresponding to the through hole. A contact hole is formed in an insulating film via this hole. In such a method, even if there is a large level difference from the surface of the second semiconductor substrate to the bottom of the through hole, only the masking material bridged over the through hole is exposed by photolithography. Therefore, photolithography for a large level difference is not necessary. As a result, the hole can be formed in the masking material successfully, and the contact hole can be formed successively by an anisotropic dry etching via this hole, even in the case where etching for a large level difference is performed.Type: GrantFiled: September 3, 2013Date of Patent: May 24, 2016Assignee: DENSO CORPORATIONInventors: Takashi Katsumata, Hisanori Yokura
-
Publication number: 20150228540Abstract: In a method for producing a semiconductor device having a through electrode structure, a masking material is formed so as to bridge over a through hole formed in a second semiconductor substrate, and a hole is formed in the masking material at a position corresponding to the through hole. A contact hole is formed in an insulating film via this hole. In such a method, even if there is a large level difference from the surface of the second semiconductor substrate to the bottom of the through hole, only the masking material bridged over the through hole is exposed by photolithography. Therefore, photolithography for a large level difference is not necessary. As a result, the hole can be formed in the masking material successfully, and the contact hole can be formed successively by an anisotropic dry etching via this hole, even in the case where etching for a large level difference is performed.Type: ApplicationFiled: September 3, 2013Publication date: August 13, 2015Applicant: DENSO CORPORTIONInventors: Takashi Katsumata, Hisanori Yokura
-
Patent number: 9105753Abstract: A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.Type: GrantFiled: August 2, 2013Date of Patent: August 11, 2015Assignee: DENSO CORPORATIONInventors: Masaya Tanaka, Hisanori Yokura
-
Patent number: 9024632Abstract: A magnetic sensor is provided, including: a substrate; a plurality of magneto resistance element portions, disposed above the substrate, each including: a free magnetic layer having a magnetization direction changeable by an external magnetic field; and a pin magnetic layer having a fixed magnetization direction; and a plurality of heater portions corresponding to the magneto resistance element portions, respectively, and configured to heat a corresponding pin magnetic layer, wherein the magnetization direction of the pin magnetic layer of one magneto resistance element portion is different from the magnetization direction of the pin magnetic layer of another magneto resistance element portion on a plane parallel to a surface of the substrate, when the external magnetic field is applied to each of the magneto resistance element portions, the magnetic sensor detects a physical amount based on a change in a resistance of each of the magneto resistance element portions.Type: GrantFiled: May 22, 2012Date of Patent: May 5, 2015Assignee: DENSO CORPORATIONInventors: Takamoto Furuichi, Hisanori Yokura, Toshifumi Yano
-
Publication number: 20150042319Abstract: A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.Type: ApplicationFiled: April 17, 2013Publication date: February 12, 2015Inventors: Takamoto Furuichi, Toshifumi Yano, Hisanori Yokura
-
Patent number: 8785231Abstract: A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.Type: GrantFiled: January 24, 2013Date of Patent: July 22, 2014Assignee: DENSO CORPORATIONInventors: Kazuhiko Sugiura, Tetsuo Fujii, Hisanori Yokura
-
Publication number: 20140042497Abstract: A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.Type: ApplicationFiled: August 2, 2013Publication date: February 13, 2014Applicant: DENSO CORPORATIONInventors: Masaya TANAKA, Hisanori YOKURA
-
Patent number: 8497557Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.Type: GrantFiled: April 5, 2010Date of Patent: July 30, 2013Assignee: DENSO CORPORATIONInventors: Masaya Tanaka, Tetsuo Fujii, Hisanori Yokura
-
Patent number: 8413507Abstract: A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.Type: GrantFiled: June 8, 2010Date of Patent: April 9, 2013Assignee: DENSO CORPORATIONInventors: Tetsuo Fujii, Hisanori Yokura, Hirofumi Higuchi