Patents by Inventor Hisanori Yokura

Hisanori Yokura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11054326
    Abstract: In a physical quantity sensor, a first substrate has a recess depressed from a second surface to provide a thin film section adjacent to a first surface, and a second substrate has a first surface bonded to the first surface of the first substrate, and has a hollow depressed from the first surface and facing the recess. The recess and the hollow have such sizes that a projected line defined by projecting an end of a bottom surface in the recess to the first surface of the first substrate surrounds an open end of the hollow. When the thin film section is displaced toward the hollow, a maximum tensile stress is generated at a position on a rear surface of the thin film section intersecting an extended line along a normal direction to the first surface of the first substrate and passing through the open end of the hollow.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: July 6, 2021
    Assignee: DENSO CORPORATION
    Inventors: Yutaka Hayakawa, Hisanori Yokura
  • Publication number: 20200399118
    Abstract: A electronic device includes a substrate, a first metal film, an insulating film, a second metal film, and a third metal film. The substrate has one surface. The first metal film is disposed on the one surface. The insulating film is disposed on the one surface in a state covering the first metal film. The insulating film has a contact hole exposing the first metal film. The second metal film is disposed on a portion of the first metal film exposed from the contact hole and a periphery of the contact hole. The third metal film is made of gold and disposed on the second metal film. The first metal film, the second metal film, and the third metal film are stacked as a pad portion.
    Type: Application
    Filed: September 3, 2020
    Publication date: December 24, 2020
    Inventors: Yutaka HAYAKAWA, Hisanori YOKURA
  • Publication number: 20200095115
    Abstract: A semiconductor device includes a first substrate having a first surface, and a second substrate having a second surface. A part of the second substrate is bonded to a part of the first surface with atmospheric pressure plasma. The semiconductor device further includes an oxide film disposed on the first surface of the first substrate, and a protection film layered on a surface of the oxide film opposite to the first substrate.
    Type: Application
    Filed: November 27, 2019
    Publication date: March 26, 2020
    Inventors: Takahiro KAWANO, Hisanori YOKURA, Tsuyoshi FUJIWARA
  • Publication number: 20190339147
    Abstract: In a physical quantity sensor, a first substrate has a recess depressed from a second surface to provide a thin film section adjacent to a first surface, and a second substrate has a first surface bonded to the first surface of the first substrate, and has a hollow depressed from the first surface and facing the recess. The recess and the hollow have such sizes that a projected line defined by projecting an end of a bottom surface in the recess to the first surface of the first substrate surrounds an open end of the hollow. When the thin film section is displaced toward the hollow, a maximum tensile stress is generated at a position on a rear surface of the thin film section intersecting an extended line along a normal direction to the first surface of the first substrate and passing through the open end of the hollow.
    Type: Application
    Filed: July 15, 2019
    Publication date: November 7, 2019
    Inventors: Yutaka HAYAKAWA, Hisanori YOKURA
  • Patent number: 10468322
    Abstract: A semiconductor device includes: a first substrate having connectors at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connectors; through-electrodes respectively arranged at through-holes and electrically connected with the connectors; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: November 5, 2019
    Assignee: DENSO CORPORATION
    Inventors: Kazuyuki Kakuta, Hisanori Yokura, Minoru Murata
  • Publication number: 20190051575
    Abstract: A semiconductor device includes: a first substrate having connection parts at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connection parts; through-electrodes respectively arranged at through-holes and electrically connected with the connection parts; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.
    Type: Application
    Filed: February 23, 2017
    Publication date: February 14, 2019
    Inventors: Kazuyuki KAKUTA, Hisanori YOKURA, Minoru MURATA
  • Patent number: 9944515
    Abstract: A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1° C./sec or smaller until a temperature of the substrate increases to 700° C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: April 17, 2018
    Assignee: DENSO CORPORATION
    Inventors: Yutaka Hayakawa, Hisanori Yokura
  • Patent number: 9835507
    Abstract: A dynamic quantity sensor includes a first substrate and a second substrate. The first substrate has one surface, another surface opposite to the one surface, and a depressed portion defining a thin portion. The second substrate has one surface attached to the first substrate and a recessed portion disposed corresponding to the depressed portion. At least a part of a first projection line obtained by projecting the recessed portion is disposed outside of a second projection line obtained by projecting a boundary line between side walls of the depressed portion and the thin portion. The thin portion disposed inside the periphery of the recessed portion provides a film portion which is displaceable corresponding to a physical quantity applied to the film portion, and a region sandwiched between the film portion and a portion connected to the periphery of the recessed portion provides a stress release region.
    Type: Grant
    Filed: August 1, 2014
    Date of Patent: December 5, 2017
    Assignee: DENSO CORPORATION
    Inventors: Takahiro Kawano, Takashi Katsumata, Hisanori Yokura, Shoji Ozoe, Hiroaki Tanaka
  • Publication number: 20170305742
    Abstract: A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1° C./sec or smaller until a temperature of the substrate increases to 700° C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.
    Type: Application
    Filed: February 3, 2016
    Publication date: October 26, 2017
    Inventors: Yutaka HAYAKAWA, Hisanori YOKURA
  • Patent number: 9664768
    Abstract: A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: May 30, 2017
    Assignee: DENSO CORPORATION
    Inventors: Takamoto Furuichi, Toshifumi Yano, Hisanori Yokura
  • Publication number: 20160187215
    Abstract: A dynamic quantity sensor includes a first substrate and a second substrate. The first substrate has one surface, another surface opposite to the one surface, and a depressed portion defining a thin portion. The second substrate has one surface attached to the first substrate and a recessed portion disposed corresponding to the depressed portion. At least a part of a first projection line obtained by projecting the recessed portion is disposed outside of a second projection line obtained by projecting a boundary line between side walls of the depressed portion and the thin portion. The thin portion disposed inside the periphery of the recessed portion provides a film portion which is displaceable corresponding to a physical quantity applied to the film portion, and a region sandwiched between the film portion and a portion connected to the periphery of the recessed portion provides a stress release region.
    Type: Application
    Filed: August 1, 2014
    Publication date: June 30, 2016
    Applicant: DENSO CORPORATION
    Inventors: Takahiro KAWANO, Takashi KATSUMATA, Hisanori YOKURA, Shoji OZOE, Hiroaki TANAKA
  • Patent number: 9349644
    Abstract: In a method for producing a semiconductor device having a through electrode structure, a masking material is formed so as to bridge over a through hole formed in a second semiconductor substrate, and a hole is formed in the masking material at a position corresponding to the through hole. A contact hole is formed in an insulating film via this hole. In such a method, even if there is a large level difference from the surface of the second semiconductor substrate to the bottom of the through hole, only the masking material bridged over the through hole is exposed by photolithography. Therefore, photolithography for a large level difference is not necessary. As a result, the hole can be formed in the masking material successfully, and the contact hole can be formed successively by an anisotropic dry etching via this hole, even in the case where etching for a large level difference is performed.
    Type: Grant
    Filed: September 3, 2013
    Date of Patent: May 24, 2016
    Assignee: DENSO CORPORATION
    Inventors: Takashi Katsumata, Hisanori Yokura
  • Publication number: 20150228540
    Abstract: In a method for producing a semiconductor device having a through electrode structure, a masking material is formed so as to bridge over a through hole formed in a second semiconductor substrate, and a hole is formed in the masking material at a position corresponding to the through hole. A contact hole is formed in an insulating film via this hole. In such a method, even if there is a large level difference from the surface of the second semiconductor substrate to the bottom of the through hole, only the masking material bridged over the through hole is exposed by photolithography. Therefore, photolithography for a large level difference is not necessary. As a result, the hole can be formed in the masking material successfully, and the contact hole can be formed successively by an anisotropic dry etching via this hole, even in the case where etching for a large level difference is performed.
    Type: Application
    Filed: September 3, 2013
    Publication date: August 13, 2015
    Applicant: DENSO CORPORTION
    Inventors: Takashi Katsumata, Hisanori Yokura
  • Patent number: 9105753
    Abstract: A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.
    Type: Grant
    Filed: August 2, 2013
    Date of Patent: August 11, 2015
    Assignee: DENSO CORPORATION
    Inventors: Masaya Tanaka, Hisanori Yokura
  • Patent number: 9024632
    Abstract: A magnetic sensor is provided, including: a substrate; a plurality of magneto resistance element portions, disposed above the substrate, each including: a free magnetic layer having a magnetization direction changeable by an external magnetic field; and a pin magnetic layer having a fixed magnetization direction; and a plurality of heater portions corresponding to the magneto resistance element portions, respectively, and configured to heat a corresponding pin magnetic layer, wherein the magnetization direction of the pin magnetic layer of one magneto resistance element portion is different from the magnetization direction of the pin magnetic layer of another magneto resistance element portion on a plane parallel to a surface of the substrate, when the external magnetic field is applied to each of the magneto resistance element portions, the magnetic sensor detects a physical amount based on a change in a resistance of each of the magneto resistance element portions.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: May 5, 2015
    Assignee: DENSO CORPORATION
    Inventors: Takamoto Furuichi, Hisanori Yokura, Toshifumi Yano
  • Publication number: 20150042319
    Abstract: A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.
    Type: Application
    Filed: April 17, 2013
    Publication date: February 12, 2015
    Inventors: Takamoto Furuichi, Toshifumi Yano, Hisanori Yokura
  • Patent number: 8785231
    Abstract: A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: July 22, 2014
    Assignee: DENSO CORPORATION
    Inventors: Kazuhiko Sugiura, Tetsuo Fujii, Hisanori Yokura
  • Publication number: 20140042497
    Abstract: A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.
    Type: Application
    Filed: August 2, 2013
    Publication date: February 13, 2014
    Applicant: DENSO CORPORATION
    Inventors: Masaya TANAKA, Hisanori YOKURA
  • Patent number: 8497557
    Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.
    Type: Grant
    Filed: April 5, 2010
    Date of Patent: July 30, 2013
    Assignee: DENSO CORPORATION
    Inventors: Masaya Tanaka, Tetsuo Fujii, Hisanori Yokura
  • Patent number: 8413507
    Abstract: A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: April 9, 2013
    Assignee: DENSO CORPORATION
    Inventors: Tetsuo Fujii, Hisanori Yokura, Hirofumi Higuchi