Abstract: A breechblock assembly and operating mechanism for a gas operating automatic loading fire-arm has a breechblock slider adapted to be retracted by utilization of a gas pressure at the firing of the shotshell, a link is pivoted at the rear end of the slider so as to be swingable up and down and provided with swinging-movement limiting means, a breechblock is adapted to be locked so as to tightly close the breech face of the barrel and is mounted on the breechblock slider so as to be forwardly movable for a predetermined length, and a propelling force recoil spring mechanism engages the rear end of the link and is located in the stock of the gun for energizing the link to guide the tilting backward movement thereof, and the actuating mechanism is so constructed that it releases the limitation of the swinging-movement of the link when the breechblock slider and the breechblock are relatively moved by a predetermined length from their initial positions.

Abstract: An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 10.sup.7 to 10.sup.11 ohm-cm, which has improved passivation property.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.

Abstract: A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.

Abstract: A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain.

Abstract: A firearm cartridge assembly consists of a casing having a bullet mounted in one end and an explosive charge in the opposite end with a wad extending between the two end elements. The wad has a generally cylindrical configuration and includes a first end and a second end each containing a similarly shaped recess. The first end in the assembled position contacts the explosive charge and the second end contacts the trailing end surface of the bullet. Located between and spaced axially from the ends of the wad is a centrally located disc-shaped section extending transversely of the axis extending between the ends and having an outer periphery generally conforming to and in surface contact with the inner surface of the casing so that the disc-shaped section forms a seal with the casing against gas leakage when the charge is exploded.

Abstract: A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.

Abstract: A semiconductor device including a substrate of semiconductor material having charge carriers of one conductivity type and a main region of opposite conductivity type. A ring of said opposite conductivity type is disposed around the main region and an auxiliary region of said opposite conductivity type is disposed on the opposite surface of the substrate. The said rings and the said auxiliary region are spaced from the main region by distances that permit the depletion region of the main region to reach the ring and the auxiliary region when the main region is reversed biased with respect to the substrate.

Abstract: A semiconductor device is provided having at least two semiconductor regions of opposite conductivity type and forming a planar-type PN junction. A field limiting ring is disposed spaced from the PN junction. A high-resistivity polycrystalline silicon layer covers the PN junction and the field limiting ring.