Abstract: A fine particle producing apparatus includes a reaction chamber extending vertically from the lower side to the upper side; a material supply device which is connected to a central part on one end side of the vertically lower side inside the reaction chamber and supplies a material particle into the reaction chamber of a vertically upper side from a material supply port; a first electrode arrangement region which protrudes in an inward radial direction to be disposed on an inner peripheral wall in the reaction chamber which is vertically above the material supply device, and includes a plurality of lower electrodes to which AC power is applied; a second electrode arrangement region which protrudes in an inward radial direction to be disposed on an inner peripheral wall in the reaction chamber which is vertically above the first electrode arrangement region, and includes a plurality of upper electrodes to which AC power is applied; a collector which is connected to the other end side in the reaction chamber of

Abstract: A production apparatus and method for fine particles are capable of increasing a production amount and producing fine particles at low cost by efficiently inputting a large amount of material to plasma. The production apparatus includes a material supply device, which includes a plurality of material supply ports that supply a material gas containing material particles and are arranged below a plurality of electrodes in a vertical direction inside a vacuum chamber. The material supply device further includes a first gas supply port that supplies a first shield gas arranged in an inner periphery of the plural material supply ports and plural second gas supply ports that supply a second shield gas arranged in an outer periphery of the plural material supply ports.

Abstract: An apparatus and a method for producing fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles into the vacuum chamber from material feeing ports, and a plurality of electrodes connected to the vacuum chamber. Tip ends of the electrodes protrude into the vacuum chamber to generate plasma, and a collecting device is connected to the vacuum chamber and collects fine particles. The electrodes generate discharge inside the vacuum chamber and produce the fine particles from the material. The material feeding ports of the material feeding device are arranged in a lower side than (below) the plural electrodes in the vertical direction in the vacuum chamber.

Abstract: A fine particle producing apparatus includes a reaction chamber extending vertically from the lower side to the upper side; a material supply device which is connected to a central part on one end side of the vertically lower side inside the reaction chamber and supplies a material particle into the reaction chamber of a vertically upper side from a material supply port; a first electrode arrangement region which protrudes in an inward radial direction to be disposed on an inner peripheral wall in the reaction chamber which is vertically above the material supply device, and includes a plurality of lower electrodes to which AC power is applied; a second electrode arrangement region which protrudes in an inward radial direction to be disposed on an inner peripheral wall in the reaction chamber which is vertically above the first electrode arrangement region, and includes a plurality of upper electrodes to which AC power is applied; a collector which is connected to the other end side in the reaction chamber of

Abstract: A production apparatus for fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a fine particle collection device connected to the vacuum chamber and collecting fine particles. The fine particles are produced from the material by generating electric discharge inside the vacuum chamber. The apparatus includes an inner chamber which forms an outside space with respect to the vacuum chamber installed between a wall of the vacuum chamber and a plasma generation region and gas supply pipes which supply a gas to the outside space between the wall of the vacuum chamber and a wall of the inner chamber.

Abstract: An apparatus and a method for producing fine particles capable of increasing the production and producing fine particles at low costs by feeding a large quantity of material efficiently into the plasma. The apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles into the vacuum chamber from material feeding ports, a plurality of electrodes connected to the vacuum chamber, tip ends of which protrude into the vacuum chamber to generate plasma and a collecting device connected to the vacuum chamber and collecting fine particles, which generates discharge inside the vacuum chamber and produces the fine particles from the material, in which the material feeding ports of the material feeding device are arranged in a lower side than the plural electrodes in the vertical direction in the vacuum chamber.

Abstract: To provide an apparatus and a method of producing fine particles capable of increasing evaporation efficiency of a material, increasing the production of fine particles and reducing costs by heating the inputted material by a gas heated by thermal plasma. A fine particle production apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a collection device connected to the vacuum chamber and collecting fine particles, which produces the fine particles from the material by generating electric discharge inside the vacuum chamber, in which the collection device and the material feeding device are connected by piping, and a material heating and circulation device which heats the material by heat of a gas inside the chamber heated by the plasma through the piping is provided.

Abstract: An apparatus and a method for producing fine particles capable of increasing the production and producing fine particles at low costs by feeding a large quantity of material efficiently into the plasma. The apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles into the vacuum chamber from material feeing ports, a plurality of electrodes connected to the vacuum chamber, tip ends of which protrude into the vacuum chamber to generate plasma and a collecting device connected to the vacuum chamber and collecting fine particles, which generates discharge inside the vacuum chamber and produces the fine particles from the material, in which the material feeding ports of the material feeding device are arranged in a lower side than the plural electrodes in the vertical direction in the vacuum chamber.

Abstract: A production apparatus for fine particles includes a vacuum chamber, a material supply device, a plurality of electrodes arranged and a collection device connecting to the other end of the vacuum chamber and collecting fine particles, which generates plasma and produces fine particles from the material particles, in which a first electrode arrangement region on the material supply port's side and a second electrode arrangement region apart from the first electrode arrangement region to the collection device's side which respectively cross a direction in which the material flows between the vicinity of the material supply port and the collection device are provided in the intermediate part of the vacuum chamber, and both the first electrode arrangement region and the second electrode arrangement region are provided with a plurality of electrodes respectively to form the electrodes in multi-stages.

Abstract: A production apparatus and method for fine particles are capable of increasing a production amount and producing fine particles at low cost by efficiently inputting a large amount of material to plasma. The production apparatus includes a material supply device, which includes a plurality of material supply ports that supply a material gas containing material particles and are arranged below a plurality of electrodes in a vertical direction inside a vacuum chamber. The material supply device further includes a first gas supply port that supplies a first shield gas arranged in an inner periphery of the plural material supply ports and plural second gas supply ports that supply a second shield gas arranged in an outer periphery of the plural material supply ports.

Abstract: A production apparatus for fine particles includes a vacuum chamber, a material supply device, a plurality of electrodes arranged and a collection device connecting to the other end of the vacuum chamber and collecting fine particles, which generates plasma and produces fine particles from the material particles, in which a first electrode arrangement region on the material supply port's side and a second electrode arrangement region apart from the first electrode arrangement region to the collection device's side which respectively cross a direction in which the material flows between the vicinity of the material supply port and the collection device are provided in the intermediate part of the vacuum chamber, and both the first electrode arrangement region and the second electrode arrangement region are provided with a plurality of electrodes respectively to form the electrodes in multi-stages.

Abstract: A production apparatus for fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a fine particle collection device connected to the vacuum chamber and collecting fine particles. The fine particles are produced from the material by generating electric discharge inside the vacuum chamber. The apparatus includes an inner chamber which forms an outside space with respect to the vacuum chamber installed between a wall of the vacuum chamber and a plasma generation region and gas supply pipes which supply a gas to the outside space between the wall of the vacuum chamber and a wall of the inner chamber.

Abstract: To provide an apparatus and a method of producing fine particles capable of increasing evaporation efficiency of a material, increasing the production of fine particles and reducing costs by heating the inputted material by a gas heated by thermal plasma. A fine particle production apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a collection device connected to the vacuum chamber and collecting fine particles, which produces the fine particles from the material by generating electric discharge inside the vacuum chamber, in which the collection device and the material feeding device are connected by piping, and a material heating and circulation device which heats the material by heat of a gas inside the chamber heated by the plasma through the piping is provided.

Abstract: An apparatus and a method for producing fine particles capable of increasing the production and producing fine particles at low costs by feeding a large quantity of material efficiently into the plasma. The apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles into the vacuum chamber from material feeing ports, a plurality of electrodes connected to the vacuum chamber, tip ends of which protrude into the vacuum chamber to generate plasma and a collecting device connected to the vacuum chamber and collecting fine particles, which generates discharge inside the vacuum chamber and produces the fine particles from the material, in which the material feeding ports of the material feeding device are arranged in a lower side than the plural electrodes in the vertical direction in the vacuum chamber.

Abstract: A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.

Abstract: A method for fabricating a thin-film semiconductor device for display according to the present disclosure includes: preparing a glass substrate; forming, above the glass substrate, an undercoat layer including a nitride film; forming a molybdenum metal layer above the undercoat layer; forming a gate electrode from the metal layer by an etching process; forming a gate insulating film above the gate electrode; forming a non-crystalline silicon layer as a non-crystalline semiconductor layer above the gate insulating film; forming a polycrystalline semiconductor layer which is a polysilicon layer by annealing the non-crystalline silicon layer at a temperature in a range from 700° C. to 1400° C.; forming a source electrode and a drain electrode above the polysilicon layer; and performing hydrogen plasma treatment at a stage after the metal layer is formed and before the polysilicon layer is formed, using a radio frequency power in a range from 0.098 W/cm2 to 0.262 W/cm2.

Abstract: A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.

Abstract: In the thin-film transistor device: the stacked thickness of either a source electrode or a drain electrode and a corresponding one of silicon layers is the same value or a value close to the same value as the stacked thickness of a first channel layer and a second channel layer; the stacked thickness of the first channel layer and the second channel layer is the same in a region between the source electrode and the drain electrode and above the source electrode and the drain electrode; the first channel layer and the second channel layer are sunken in the region between the source electrode and the drain electrode, following a shape between the source electrode and the drain electrode; and the gate electrode has one region overlapping with the source electrode and an other region overlapping with the drain electrode.

Abstract: Provided is a method of manufacturing a TFT substrate for preventing characteristics of a native oxide layer in a boundary between a microcrystal semiconductor layer and an amorphous semiconductor layer from being degraded. The method includes forming a gate electrode, forming a gate insulating film, modifying the formed first amorphous silicon thin film into a first crystalline silicon thin film, removing a silicon oxide layer on the surface of the first crystalline silicon thin film, forming the second amorphous silicon thin film, and dry etching the first crystalline silicon thin film and the second amorphous silicon thin film, and it is determined whether or not the in-process TFT substrate after the dry etching is returned to the processes after the dry etching by measuring the emission intensity of radicals in plasma during the dry etching and detecting the presence or absence of the silicon oxide layer in the boundary.

Abstract: An organic EL element is provided with a substrate; an electrode set on the substrate; an organic EL layer set on the electrode; and a bank which define the organic EL layer. A lyophilicity at a top of the bank is higher than a lyophilicity at a bottom surface of the bank, and a lyophilicity of the bank gradually changes from the bottom surface of the bank to the top of the bank.