Abstract: An imprint mold including a substrate of transparent material having a first principal surface having a pattern region and a second principal surface; a first light shielding film provided on the first principal surface, along a periphery of the pattern region; and a second light shielding film provided on the second principal surface, having an opening including an opposite region to the pattern region, a part of the second light shielding film opposite to the first light shielding film. In a cross section perpendicular to the substrate, the maximum incident angle of the light for curing a transfer layer to the second principal surface is less than an angle between a perpendicular line of the second principal surface and a line connecting an end of the second light shielding film on a side of the opening and a farthest end of the first light shielding film from the pattern region.

Abstract: An imprint mold including a substrate of transparent material having a first principal surface having a pattern region and a second principal surface; a first light shielding film provided on the first principal surface, along a periphery of the pattern region; and a second light shielding film provided on the second principal surface, having an opening including an opposite region to the pattern region, a part of the second light shielding film opposite to the first light shielding film. In a cross section perpendicular to the substrate, the maximum incident angle of the light for curing a transfer layer to the second principal surface is less than an angle between a perpendicular line of the second principal surface and a line connecting an end of the second light shielding film on a side of the opening and a farthest end of the first light shielding film from the pattern region.

Abstract: It is an object of the present invention to effectively manufacture a charged-particle beam lithography mask, an X-ray lithography mask, or an extreme ultraviolet beam lithography mask by using, for example, an existing writer such as an electron beam writer for photomasks, while achieving improvement in processing accuracy of a mask pattern. A lithography mask (1) comprises a substrate (2) which has a lower surface provided substantially at the center thereof with an opening (3) and a self-supporting membrane (m) having a pattern region (4) substantially at the center of an upper surface of the substrate (2) corresponding to the opening (3). The self-supporting membrane (m) is provided with through-holes (h) of a mask pattern in it or an absorber or scatterer of a mask pattern on it, and the pattern region (4) and a peripheral region around the pattern region (5) are in one plane.

Abstract: It is an object of the present invention to effectively manufacture a charged-particle beam lithography mask, an X-ray lithography mask, or an extreme ultraviolet beam lithography mask by using, for example, an existing writer such as an electron beam writer for photomasks, while achieving improvement in processing accuracy of a mask pattern. A lithography mask (1) comprises a substrate (2) which has a lower surface provided substantially at the center thereof with an opening (3) and a self-supporting membrane (m) having a pattern region (4) substantially at the center of an upper surface of the substrate (2) corresponding to the opening (3). The self-supporting membrane (m) is provided with through-holes (h) of a mask pattern in it or an absorber or scatterer of a mask pattern on it, and the pattern region (4) and a peripheral region around the pattern region (5) are in one plane.