Abstract: Provided are resin-based and metal-based anti-thermally-expansive members each having small thermal expansion. More specifically, provided are an anti-thermally-expansive resin and an anti-thermally-expansive metal, each including a resin or a metal having a positive linear expansion coefficient at 20° C. and a solid particle dispersed in the resin or metal, in which the solid particle includes at least an oxide represented by the following general formula (1): (Bi1-xMx)NiO3 (1), where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02?x?0.15.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: Provided are resin-based and metal-based anti-thermally-expansive members each having small thermal expansion. More specifically, provided are an anti-thermally-expansive resin and an anti-thermally-expansive metal, each including a resin or a metal having a positive linear expansion coefficient at 20° C. and a solid particle dispersed in the resin or metal, in which the solid particle includes at least an oxide represented by the following general formula (1): (Bi1-xMx)NiO3??(1), where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02?x?0.15.

Abstract: Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.

Abstract: There is provided a lead-free piezoelectric ceramic having a high and stable piezoelectric constant and a high and stable mechanical quality factor in a wide operating temperature range. A method for manufacturing the lead-free piezoelectric ceramic is also provided. the general formula (1) (Ba1-xCax)a(Ti1-y-zSnyZrz)O3 (0.08?x?0.20, 0.01?y?0.04, 0?z?0.04)??(1) A piezoelectric ceramic includes a main component containing a perovskite type metal oxide having the following general formula (1); and Mn as a first auxiliary component. The amount b (mol) of Mn per mole of the metal oxide is in the range of 0.0048?b?0.0400, and the value a of the general formula (1) or (2) is in the range of 0.9925+b?a?1.0025+b.

Abstract: Provided is a piezoelectric material that achieves both high piezoelectric performance and high Curie temperature. In addition, provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide that is expressed by the following general formula (1): xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5)O3 (1), where M represents at least one type of element selected from the group consisting of Mg and Ni, x satisfies 0.25?x?0.75, y satisfies 0.15?y?0.70, z satisfies 0.05?z?0.60, and x+y+z=1 is satisfied.

Abstract: Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z)??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.

Abstract: Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×1021 atoms/cm3 or less, and the third insulating layer having a hydrogen content of more than 4×1021 atoms/cm3.

Abstract: An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide.

Abstract: Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Ax(ZnjTi(1-j))l(MgkTi(1-k))mMnO3??General formula (1) where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9?x?1.25, 0.4?j?0.6, 0.4?k?0.6, 0.09?l?0.49, 0.19?m?0.64, 0.13?n?0.48, and l+m+n=1 are satisfied.

Abstract: Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.

Abstract: Provided is a piezoelectric ceramics that can achieve both high piezoelectric performance and a high Curie temperature. Also provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric ceramics. The piezoelectric ceramics include a perovskite-type metal oxide expressed by a general formula (1): xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5)O3, where M represents at least one type of element selected from the group consisting of Mg and Ni, x satisfies 0.40?x?0.80, y satisfies O?y?0.30, z satisfies 0.05?z?0.60, and x+y+z=1 is satisfied, and are oriented in a (111) plane in a pseudocubic expression.

Abstract: A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment.

Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z) ??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.

Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z)??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.

Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Abstract: A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.

Abstract: Provided are resin-based and metal-based anti-thermally-expansive members each having small thermal expansion. More specifically, provided are an anti-thermally-expansive resin and an anti-thermally-expansive metal, each including a resin or a metal having a positive linear expansion coefficient at 20° C. and a solid particle dispersed in the resin or metal, in which the solid particle includes at least an oxide represented by the following general formula (1): (Bi1-xMx)NiO3 (1), where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02?x?0.15.