Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first nonmagnetic planar region separated from the semiconductor element in a first direction, a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. The first magnetic planar region includes a first end portion extending along a second direction crossing the first direction. A first magnetization direction of the first magnetic planar region is tilted with respect to the second direction.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: The present inventors successfully introduced genes into stem cells of airway epithelial tissues using simian immunodeficiency virus vectors pseudotyped with F and HN, which are envelope glycoproteins of Sendai virus. Gene transfer into airway epithelial tissue stem cells using a vector of the present invention is useful for gene therapy of genetic respiratory diseases such as cystic fibrosis. Furthermore, it is possible to select respiratory organs such as the lungs as production tissues for providing proteins that are deficient due to genetic diseases.

Abstract: Cost for a direction switching valve (third direction switching valve) is reduced while oil is supplied from two pumps to one actuator (third actuator). A hydraulic circuit 30 for construction machinery includes a first unloading passage 31 connected with a first pump 11, a second unloading passage 32 connected with a second pump 12, a first supply passage 41 connected with the first pump 11, a second supply passage 42 connected with the second pump 12, a third supply passage 43, and third direction switching valves (53E and 53F). The third supply passage 43 is connected with the first supply passage 41 and the second supply passage 42. The third direction switching valves are connected with the third supply passage 43, the first unloading passage 31, the second unloading passage 32, and the tank passage 35, and supply and discharge oil to and from the third actuators (23E and 23F).

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first magnetic planar region separated from the semiconductor element in a first direction, and a first nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. At least a portion of the first magnetic planar region includes Fe1-x1-x2?x1Nx2. ? includes at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al. x1 is not less than 0.5 atomic percent and not more than 10 atomic percent. x2 is not less than 0.5 atomic percent and not more than 8 atomic percent.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: According to one embodiment, a magnetic head includes a magnetic pole, and a first shield, and a stacked body provided between the magnetic pole and the first shield. The stacked body includes a first layer, a second layer and a third layer. The first layer includes at least one first element selected from the group consisting of Fe, Co, and Ni. The second layer is provided between the magnetic pole and the first layer, and includes at least one second element selected from the group consisting of Cr, V, Mn, Ti, and Sc. The third layer is provided between the first layer and the first shield, and includes at least one third element selected from the group consisting of Cr, V, Mn, Ti, and Sc.

Abstract: A recycling passage 71 is configured to perform “pressure oil recycling,” in which the recycling passage 71 feeds boom discharge oil 35Fo (recycling discharge oil) discharged from a boom cylinder 23F (a recycling actuator), to the boom cylinder 23F (an actuator actuated with feeding of discharge oil from a second pump 12). A first sensing pressure rising passage 81 feeds a part of boom discharge oil 35Fo to a first unload passage 31 upstream of a first pressure sensing point 61p when the pressure oil recycling is performed.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first nonmagnetic planar region separated from the semiconductor element in a first direction, a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. The first magnetic planar region includes a first end portion extending along a second direction crossing the first direction. A first magnetization direction of the first magnetic planar region is tilted with respect to the second direction.

Abstract: According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.

Abstract: According to one embodiment, a magnetic head includes a magnetic pole, and a first shield, and a stacked body provided between the magnetic pole and the first shield. The stacked body includes a first layer, a second layer and a third layer. The first layer includes at least one first element selected from the group consisting of Fe, Co, and Ni. The second layer is provided between the magnetic pole and the first layer, and includes at least one second element selected from the group consisting of Cr, V, Mn, Ti, and Sc. The third layer is provided between the first layer and the first shield, and includes at least one third element selected from the group consisting of Cr, V, Mn, Ti, and Sc.

Abstract: In one embodiment, a magnetic sensor has first and second electrode, a magneto-resistive effect element, an insulating layer between the first electrode and the element, a current source portion and a detecting portion. The element has a length in a first direction along a film surface of the element which is larger than that in a second direction along the film surface and perpendicular to the first direction. The element includes first, non-magnetic and second magnetic layers. The magnetization direction of the first magnetic layer is along the first direction. The element is connected to the first and second electrodes. The current source portion is connected to the first and second electrodes. The detecting portion can detect a second harmonic component in an output signal of the element. The first electrode and the element overlap each other in a third direction perpendicular to the first and the second directions.

Abstract: The present inventors successfully introduced genes into stem cells of airway epithelial tissues using simian immunodeficiency virus vectors pseudotyped with F and HN, which are envelope glycoproteins of Sendai virus. Gene transfer into airway epithelial tissue stem cells using a vector of the present invention is useful for gene therapy of genetic respiratory diseases such as cystic fibrosis. Furthermore, it is possible to select respiratory organs such as the lungs as production tissues for providing proteins that are deficient due to genetic diseases.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: In one embodiment, a first magnetoresistive effect element, a current supply unit and a detecting unit is provided. The first magnetoresistive effect element is provided between first and second electrodes and along a first direction which is a current flowing direction between the first and the second electrode. The first magnetoresistive effect element includes first and second magnetic layers and a first intermediate layer provided between the first and the second magnetic layer and along the first direction and a second direction orthogonal to the first direction. The current supply unit is connected to the first and the second electrode and can supply an alternating current. The detecting unit detects a second harmonic component of an alternating current voltage signal outputted from the first magnetoresistive effect element. A length of the first magnetoresistive effect element in the first direction is larger than a length in the second direction.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: According to one embodiment, a sensor includes a nonmagnetic layer and a plurality of magnetic field sensors. The nonmagnetic layer has a first surface and a second surface. The magnetic field sensors are arranged along the second surface. The second surface is between the first surface and the magnetic field sensors. Each of the magnetic field sensors includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the nonmagnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The intermediate layer is nonmagnetic. A distance between the first surface and the second magnetic layer is not more than a pitch of the magnetic field sensors.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer, a second magnetic layer, and an intermediate layer disposed between the first magnetic layer and the second magnetic layer, the intermediate layer including: a first layer containing oxygen and at least one element of Cu, Au, and Ag; and a second layer containing Mg and oxygen, the second layer being disposed between the first layer and the second magnetic layer.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first nonmagnetic layer. The stacked body includes first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and an intermediate layer provided between the first magnetic layer and the second magnetic layer and being nonmagnetic. The first nonmagnetic layer is provided between the second magnetic layer and the magnetic pole. A product of a thickness and a saturation magnetic flux density of the second magnetic layer is larger than a product of a thickness and a saturation magnetic flux density of the first magnetic layer. The length of the first magnetic layer is shorter than a length of the second magnetic layer. A current flows from the second magnetic layer toward the first magnetic layer.