Abstract: A battery pack includes: an assembled battery in which power storage devices are connected; a current application line for applying current to the assembled battery; voltage detection lines for detecting voltages of the power storage devices; and a battery monitoring device that measures internal impedances of the power storage devices via the current application line and the voltage detection lines. Each of the power storage devices includes an electrode assembly in which a positive electrode plate and a negative electrode plate are alternately stacked, and an electrode plate on one principal surface of the electrode assembly and an electrode plate on the other principal surface of the electrode assembly have the same polarity, the direction of current that flows through the positive electrode plate is an opposite direction of the direction of current that flows through the negative electrode plate, and each of the power storage devices is stacked.

Abstract: A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

Abstract: An object of the invention is to provide a plasma processing method for preventing generation of deposition from an underlying metal film and attaining an anisotropic shape in hard mask etching. The plasma processing method for forming a mask using a film to be etched whose underlying layer is a metal film according to the invention includes: a first step of etching, using a plasma generated by mixed gas containing O2 gas, CHF3 gas, NF3 gas, Ar gas, and He gas, while supplying pulse-modulated radio frequency power to a sample stage on which a sample having the film to be etched is placed; and a second step of etching while supplying continuous wave (CW) radio frequency power to the sample stage after the first step. The film to be etched is a TEOS film and a silicon nitride film, and the continuous wave (CW) radio frequency power is smaller than a product of the pulse-modulated radio frequency power and a pulse-modulated duty ratio and is smaller than 50 W.

Abstract: A BMS for managing a battery assembly includes: a BMU that manages the battery assembly; and a plurality of CMUs that monitor the battery assembly. One CMU among the plurality of CMUs includes a wireless communication circuit and a timer circuit, and based on a timing at which the timer circuit times out, repeatedly transitions between a first state in which the wireless communication circuit is supplied with power and therefore capable of receiving a wake-up signal transmitted by the BMU, and a second state in which the wireless communication circuit is not supplied with power.

Abstract: A BMS includes: a BMU that manages a battery assembly; and a plurality of CMUs that monitor the battery assembly. Among the plurality of CMUs, a first CMU includes a first wireless communication circuit and a first communication antenna for communicating with the BMU, and a second CMU includes a second wireless communication circuit and a second communication antenna for communicating with the BMU. The modulation scheme for wireless communication by the first wireless communication circuit is different from the modulation scheme for wireless communication by the second wireless communication circuit.

Abstract: A BMS for managing a battery assembly includes: a BMU that manages the battery assembly; a plurality of CMUs that monitor the battery assembly; and a setting circuit. The BMU wirelessly transmits, to the plurality of CMUs, a first signal including identification information of one CMU among the plurality of CMUs. Each of the plurality of CMUs includes identification information identifying itself, receives the first signal transmitted by the BMU, and outputs a second signal on condition that the first signal received matches the identification information. The setting circuit generates and outputs correspondence information that associates (i) position information of the one CMU, among the plurality of CMUs, that output the second signal with (ii) the identification information included in the first signal transmitted by the BMU.

Abstract: A BMS includes: a BMU that manages a battery assembly; a first CMU that monitors one or more battery cells included in the battery assembly; and a second CMU that monitors the one or more battery cells monitored by the first CMU. The first CMU includes a wireless communication circuit and a communication antenna for communicating with the BMU. The second cell monitoring circuit CMU includes a power line communication circuit, for communicating with the BMU, that uses a power line in the battery assembly.

Abstract: A BMS for managing a battery assembly includes: a BMU that manages the battery assembly and includes a communication antenna; and one or more CMUs that monitor the battery assembly and each include a communication antenna that communicates with the communication antenna. A communication antenna group including the communication antenna and one or more communication antennas is arranged in a straight line. The BMS further includes a conductor that covers at least part of the communication antenna group. The conductor includes a recess that extends in the alignment direction of the communication antenna group and is recessed in a direction away from the communication antenna group in a cross-section orthogonal to the alignment direction.

Abstract: A work content analyzing apparatus of the present embodiment includes a first database storing state information indicating a state of each of one or a plurality of workers in association with time information and identification information of the worker, an estimation unit estimating the work content executed by the worker on the basis of at least two pieces of state information associated with same time in the state information stored in the first database, a specification unit specifying work time spent for the estimated work content on the basis of the state information stored in the first database and the time information associated with the state information, and an analysis unit analyzing the work content on the basis of the estimated work content and the specified work time.

Abstract: A battery pack includes: a cell stack including secondary cells connected in series or parallel; a cell data calculator that calculates the SOC and the SOH of the secondary cells; and a first NFC unit that uses NFC to communicate with an external device regarding cell information related to the SOC and the SOH calculated by the cell data calculator.

Abstract: A battery pack management system that manages a battery pack of storage batteries connected in series or parallel, includes: an acquisition unit (for example, a model parameter expander) that acquires respective impedances of the storage batteries corresponding to a first time point; and a generator (for example, an ID converter) that generates identification information of the battery pack based on the acquired impedances of the storage batteries.

Abstract: A battery monitoring device includes a measurement unit and a calculation unit. The measurement unit includes a voltage measurement unit and a current measurement unit. The calculation unit includes: storage that holds first relationship data indicating a relationship between SOC and OCV and second relationship data indicating a relationship between impedance and SOH; an impedance calculation unit that identifies a low current interval, sets a voltage obtained during the low current interval as a provisional OCV, and calculates an impedance of secondary cells from a voltage value and a current value in a transient current response; an SOH estimate unit that estimates an SOH by referencing the second relationship data using the impedance; and an SOC estimate unit that estimates an SOC by referencing the first relationship data based on the provisional OCV.

Abstract: A semiconductor device includes first and second nitride semiconductor layers. The second layer on the first nitride has a first region, a second region, and a third region between the first and second regions. A first gate electrode is in the first region and extends parallel to a surface of a substrate. A first source electrode is in the first region and extends in the first direction. A second gate electrode in the second region and extends in the first direction. A second source electrode is in the second region and extends in the first direction. A drain electrode coupled to a first and a second wiring. The first wiring directly contacts the second nitride semiconductor layer in the first region. The second wiring directly contacts the second nitride semiconductor layer in the second region. An insulation material is in the third region.

Abstract: A battery pack includes: an assembled battery in which a plurality of batteries are connected; a current applying wire for applying an electric current to the assembled battery; a plurality of voltage detecting wires for detecting voltages of the plurality of batteries; and a battery monitoring device that measures internal impedances of the plurality of batteries. The battery monitoring device is located between a positive electrode-side battery terminal and a negative electrode-side battery terminal of each of the plurality of batteries that constitute the assembled battery. The plurality of voltage detecting wires are routed radially from the battery monitoring device.

Abstract: A semiconductor device includes: a lead frame; a first semiconductor chip mounted face-up above the lead frame; and a second semiconductor chip mounted face-down above the first semiconductor chip. The second semiconductor chip has a chip size smaller than a chip size of the first semiconductor chip. The second semiconductor chip includes a bandgap element (an NPN transistor, an N-parallel NPN transistor) including a positive-negative (PN) junction and included in a band gap reference circuit.

Abstract: A conductor layer is positioned between a gate electrode and a drain electrode. The conductor layer contacts a nitride semiconductor layer. The conductor layer is electrically connected with the drain electrode. The drain electrode includes a first part contacting the nitride semiconductor layer, and a second part positioned further toward the conductor layer side than the first part in a first direction. An insulating film includes a portion positioned between the conductor layer and the drain electrode. The second part is located on the portion of the insulating film.

Abstract: A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a conductive part, an insulating part, and a third electrode. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The first electrode includes an electrode part and an electrode extension part. The electrode part contacts the second semiconductor layer. The electrode extension part extends from an upper end portion of the electrode part. The conductive part is positioned between the first electrode and the second electrode. The conductive part contacts an upper surface of the second semiconductor layer and contacting the first electrode. The insulating part is located on the conductive part and is positioned between the conductive part and the electrode extension part.

Abstract: A BMS includes cell supervising circuits connected to an alternating current power line via a transformer, and a BMU connected to the alternating current power line via a transformer. The BMU includes a control microcomputer which instructs at least one of the cell supervising circuits to control the state of charge of a secondary battery cell monitored by the at least one of the cell supervising circuits, based on pieces of information in the cell supervising circuits, the pieces of information indicating states of charge of secondary battery cells monitored by the cell supervising circuits.

Abstract: In a plasma processing method for plasma etching a silicon film or polysilicon film containing boron, the polysilicon film containing boron is etched by using a mixed gas of a halogen gas, a fluorine-containing gas, and a boron trichloride gas. According to plasma processing method, it is possible to improve the etching rate and reduce etching defects when plasma etching a silicon film or polysilicon film containing boron.

Abstract: A semiconductor device according to an embodiment includes: a first nitride semiconductor layer having a first surface and a second surface; a first source electrode provided on the first surface; a first drain electrode provided on the first surface; a first gate electrode provided on the first surface between the first source electrode and the first drain electrode; a second nitride semiconductor layer having a third surface and a fourth surface, the third surface being provided on the second surface and facing the second surface, and the second nitride semiconductor layer having a smaller band gap than the first nitride semiconductor layer; and a first semiconductor device having a fifth surface provided on the fourth surface and facing the fourth surface with a size equal to or smaller than a size of the fourth surface, the first semiconductor device including a first semiconductor material having a smaller band gap than the second nitride semiconductor layer.