Abstract: A light emitting and receiving device having a first region and a second region adjacent to the first region in a plan view, includes: a light absorbing layer formed in the first and second regions; a first cladding layer formed above the light absorbing layer; an active layer formed above the first cladding layer in the first region; and a second cladding layer formed above the active layer, wherein at least part of the active layer forms a gain region, a stepped side surface having an end surface of the gain region is formed at the boundary between the first region and the second region, light produced in the gain region exits through the end surface of the gain region, and part of the light having exited reaches the light absorbing layer in the second region and is received by the light absorbing layer.

Abstract: When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process.

Abstract: When a transistor including a conductive layer having a three-layer structure is manufactured, three-stage etching is performed. In the first etching process, an etching method in which the etching rates for the second film and the third film are high is employed, and the first etching process is performed until the first film is at least exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. In the third etching process, an etching method in which the etching rates for the first to the third films are higher than those in the second etching process is preferably employed.

Abstract: A transistor is manufactured by a method including: forming a first wiring layer; forming a first insulating film to cover the first wiring layer; forming a semiconductor layer over the first insulating film; forming a conductive film over the semiconductor layer; and performing at least two steps of etching on the conductive film to form second wiring layers which are apart from each other, wherein the two steps of etching include at least a first etching process performed under the condition that the etching rate for the conductive film is higher than the etching rate for the semiconductor layer, and a second etching process performed under the condition that the etching rates for the conductive film and the semiconductor layer are higher than those of the first etching process.

Abstract: To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.

Abstract: A light emitting and receiving device having a first region and a second region adjacent to the first region in a plan view, includes: a light absorbing layer formed in the first and second regions; a first cladding layer formed above the light absorbing layer; an active layer formed above the first cladding layer in the first region; and a second cladding layer formed above the active layer, wherein at least part of the active layer forms a gain region, a stepped side surface having an end surface of the gain region is formed at the boundary between the first region and the second region, light produced in the gain region exits through the end surface of the gain region, and part of the light having exited reaches the light absorbing layer in the second region and is received by the light absorbing layer.

Abstract: It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween.

Abstract: To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.

Abstract: To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.

Abstract: A surface-emitting type semiconductor laser includes a substrate; a first mirror disposed above the substrate; an active layer disposed above the first mirror; a second mirror disposed above the active layer; a first columnar section including the active layer, the first columnar section not having anisotropy; a first dielectric layer disposed in the first columnar section, the first dielectric layer including a symmetric opening section; a second columnar section disposed above the first columnar section, the second columnar section having an outer wall that has anisotropy; and a second dielectric layer disposed in the second columnar section, the second dielectric layer including an asymmetric opening section.

Abstract: Provided is a detection method of detecting presence or absence of an object to be detected in an object hold portion that is used together with an irradiation portion that irradiates the object to be detected with a heat ray, holds the object to be detected, and has an opening, the detection method including: imaging an image signal in a predetermined region having the opening by an imaging device; and making an irradiation optical path of the irradiation portion and an imaging optical path of the imaging device substantially coincide with each other within the opening by an optical unit.

Abstract: Disclosed is a method, in which when a liquid material is applied to the application surface of an object of application by using a liquid material supply device having a syringe containing the liquid material and equipped with a needle having at its distal end an ejection hole from which the liquid material is ejected, an image of the distal end of the needle is taken laterally by a horizontal camera together with a height reference mark when an ascent/descent drive system of the liquid material supply device is set to a reference height, and the height position of the distal end of the needle is obtained from the difference between the height of the distal end of the needle and the height of the height reference mark.

Abstract: A pesticide having stabilized high pesticidal effects for crop plants infected with plant diseases, is presented. The pesticide contains a biphenyl derivative represented by the formula (I) or its salt, as an active ingredient: wherein X, Y and Z are each independently a halogen atom, a hydroxyl group, a formyl group, an alkyl group which may be substituted, an alkoxy group which may be substituted, an alkylthio group, an alkylsulfonyl group, an alkylsulfinyl group, or the like, A is a carbonyl group, a thiocarbonyl group, an alkylene group, or a single bond, R1 and R2 are each independently a hydrogen atom, an alkyl group which may be substituted, an alkenyl group which may be substituted, an alkynyl group which may be substituted, an aryl group which may be substituted, a formyl group, an alkylcarbonyl group, a cyano group, or the like, and m and n are each independently 0, 1, 2, 3 or 4.

Abstract: An object of the present invention is to provide an element connecting apparatus with which the position of a core of each element in an optical transmission module in a short time with high accuracy. To attain the object, in a core position detection method according to the present invention, upon detecting a core of a PLC chip, parallel light is made incident on the output side end face of the PLC chip, so that the core position is detected based on an image of the input side end face obtained with the parallel light. In addition, the core position is detected by an image of the output side end face that is obtained while parallel light is made incident on the input side end face.

Abstract: Provided is a method for adjusting static attitude of a magnetic head attached to a flexure that is disposed near a free end of a head support. The free end is a distal end in a longitudinal direction of the head support. The method includes generating an adjustment condition by analyzing an image signal obtained from images of the magnetic head, the images being picked up with at least two image pickup units; bending the flexure for static attitude adjustment based on the adjustment condition; and irradiating a laser beam to a bent area of the flexure.

Abstract: The present invention relates to an electronic part holding apparatus used for an FPC bonding apparatus or the like. An object of the present invention is to provide the structure including an illumination apparatus used for image detection that can illuminate a predetermined area stably and uniformly. To attain that object, in the holding apparatus having functions of holding and illuminating a work piece, the holding position and the illumination position are made different, and the deformation of the work piece is made possible at the illumination position.

Abstract: A wind power generation system capable of outputting generated power at high efficiency with a smoothed output power includes a wind power generator and a laser aerovane mounted on the wind power generator or located near the wind power generator. Direction and velocity of wind blowing toward the wind power generator are observed using the laser aerovane, and a yaw angle and/or a pitch angle of the wind power generator is predicted and controlled based on the observation results. Thus, high-efficiency control of the wind power generation system, including the wind power generator, is achieved. An output-smoothing device connected to the wind power generator predicts and controls electric power input/output of the output-smoothing device based on a predicted power output of the wind power generator and smoothes the power output of the wind power generation system.

Abstract: To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.

Abstract: A reliable surface-emitting type semiconductor laser and a method for manufacturing the same, is capable of controlling polarization planes of laser light without lowering the energy usage efficiency. The surface-emitting type semiconductor laser has a first mirror, an active layer and a second mirror formed above a substrate, a first columnar section formed adjacent to the active layer and including a dielectric layer defining an opening section and a second columnar section formed above the first columnar section. A planar configuration of the second columnar section has anisotropy.

Abstract: Disclosed is a method, in which when a liquid material is applied to the application surface of an object of application by using a liquid material supply device having a syringe containing the liquid material and equipped with a needle having at its distal end an ejection hole from which the liquid material is ejected, an image of the distal end of the needle is taken laterally by a horizontal camera together with a height reference mark when an ascent/descent drive system of the liquid material supply device is set to a reference height, and the height position of the distal end of the needle is obtained from the difference between the height of the distal end of the needle and the height of the height reference mark.