Patents by Inventor Hitoshi Sumiya

Hitoshi Sumiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10829379
    Abstract: Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: November 10, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuhiro Ikeda, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya, Takeshi Sato
  • Publication number: 20200340140
    Abstract: In a diamond polycrystal, a value of a ratio (a?/a) of a? to a is less than or equal to 0.99 in a Knoop hardness test performed under a condition defined in JIS Z 2251:2009, where the a represents a length of a longer diagonal line of a first Knoop indentation formed in a surface of the diamond polycrystal when a Knoop indenter with a test load of 4.9 N is pressed onto the surface of the diamond polycrystal, and the a? represents a length of a longer diagonal line of a second Knoop indentation remaining in the surface of the diamond polycrystal after releasing the test load.
    Type: Application
    Filed: July 20, 2018
    Publication date: October 29, 2020
    Inventors: Hitoshi SUMIYA, Katsuko YAMAMOTO
  • Publication number: 20200340139
    Abstract: In a diamond polycrystal, a value of a ratio (d?/d) of d? to d is less than or equal to 0.98 in a Vickers hardness test performed under a condition defined in JIS Z 2244:2009, where the d represents a length of a diagonal line of a first Vickers indentation formed in a surface of the diamond polycrystal when a Vickers indenter with a test load of 4.9 N is pressed onto the surface of the diamond polycrystal, and the d? represents a length of a diagonal line of a second Vickers indentation remaining in the surface of the diamond polycrystal after releasing the test load.
    Type: Application
    Filed: July 20, 2018
    Publication date: October 29, 2020
    Inventors: Hitoshi SUMIYA, Katsuko YAMAMOTO
  • Publication number: 20200325596
    Abstract: A synthetic single crystal diamond contains nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less, and the nitrogen atoms do not include any isolated substitutional nitrogen atom.
    Type: Application
    Filed: August 29, 2018
    Publication date: October 15, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi SUMIYA, Kensei HAMAKI, Minori TERAMOTO, Katsuko YAMAMOTO
  • Publication number: 20200290881
    Abstract: A diamond polycrystal is a diamond polycrystal basically composed of a diamond single phase, wherein the diamond polycrystal is composed of a plurality of diamond grains having an average grain size of less than or equal to 30 nm, and the diamond polycrystal has a carbon dangling bond density of more than or equal to 10 ppm.
    Type: Application
    Filed: November 13, 2018
    Publication date: September 17, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi SUMIYA, Yuh ISHIDA, Kensei HAMAKI, Katsuko YAMAMOTO
  • Patent number: 10774442
    Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: September 15, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Akihiko Ueda, Yutaka Kobayashi
  • Publication number: 20200283927
    Abstract: Provided is a synthetic single crystal diamond containing nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less. The Raman shift ?? (cm?1) of a peak in a primary Raman scattering spectrum of the synthetic single crystal diamond and the Raman shift ? (cm?1) of a peak in a primary Raman scattering spectrum of a synthetic type IIa single crystal diamond containing nitrogen atoms at a content of 1 ppm or less satisfy the following expression (1): ??????0.10??(1).
    Type: Application
    Filed: August 2, 2018
    Publication date: September 10, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi SUMIYA, Kensei HAMAKI, Minori TERAMOTO, Katsuko YAMAMOTO
  • Patent number: 10737943
    Abstract: Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: August 11, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Takuya Nohara, Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya, Yutaka Kobayashi, Akihiko Ueda
  • Patent number: 10703636
    Abstract: A composite polycrystal includes: a polycrystalline diamond phase including a plurality of diamond particles; and non-diamond phases composed of non-diamond carbon. The non-diamond phases are distributed in the polycrystalline diamond phase. An average value of projected area equivalent circle diameters of the non-diamond phases is not more than 1000 nm.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: July 7, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yuh Ishida, Takeshi Sato, Hitoshi Sumiya
  • Patent number: 10697058
    Abstract: In an X-ray topography image for a crystal growth main surface of a single-crystal diamond, a group of crystal defect points are gathered, each of the crystal defect points being a tip point of a crystal defect line reaching the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists. Further, in the single-crystal diamond, a plurality of crystal defect line-like gathered regions exist in parallel. In the plurality of crystal defect line-like gathered regions, groups of crystal defect points are gathered to extend in the form of lines in a direction angled by not more than 30° relative to one arbitrarily specified direction. Accordingly, a single-crystal diamond is provided which is used suitably for a cutting tool, a polishing tool, an optical component, an electronic component, a semiconductor material, and the like.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: June 30, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya
  • Publication number: 20200181800
    Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.
    Type: Application
    Filed: January 29, 2020
    Publication date: June 11, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Kazuo Nakamae
  • Patent number: 10584428
    Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: March 10, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Kazuo Nakamae
  • Publication number: 20200062601
    Abstract: Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, at least either of nitrogen and silicon, and a remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; the nitrogen and the silicon are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.
    Type: Application
    Filed: November 29, 2017
    Publication date: February 27, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuhiro IKEDA, Keiko ARIMOTO, Katsuko YAMAMOTO, Hitoshi SUMIYA
  • Patent number: 10562822
    Abstract: It is an object to provide a cubic boron nitride polycrystalline material excellent in toughness. A cubic boron nitride polycrystalline material containing fine cubic boron nitride which is granular, has a maximum grain size not greater than 100 nm, and has an average grain size not greater than 70 nm and at least one of plate-shaped cubic boron nitride in a form of a plate having an average major radius not smaller than 50 nm and not greater than 10000 nm and coarse cubic boron nitride which is granular, has a minimum grain size exceeding 100 nm, and has an average grain size not greater than 1000 nm is provided.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: February 18, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yuh Ishida, Katsuko Yamamoto, Hitoshi Sumiya
  • Patent number: 10562776
    Abstract: The present diamond single crystal is a diamond single crystal containing nitrogen atoms, in which a concentration of the nitrogen atoms changes periodically along a crystal orientation of the diamond single crystal, and an arithmetic average value Aave, a maximum value Amax, and a minimum value Amin of the distance of one period along the crystal orientation satisfy the relationship expressed by the following equation (I): (Amax)/1.25?(Aave)?(Amin)/0.75??(I).
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: February 18, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Katsuko Yamamoto, Keiko Arimoto, Hitoshi Sumiya
  • Patent number: 10519068
    Abstract: A cubic boron nitride polycrystal includes cubic boron nitride, the cubic boron nitride having an average grain size of not more than 150 nm, the cubic boron nitride polycrystal having a crack generation load of not less than 25 N in a breaking strength test in which an R200 ?m diamond indenter is used to apply a load at a rate of 100 N/min.
    Type: Grant
    Filed: January 18, 2016
    Date of Patent: December 31, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yuh Ishida, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya
  • Patent number: 10457606
    Abstract: A composite sintered body includes a diamond phase and a non-diamond carbon phase. A non-diamond carbon phase occupancy rate is higher than 0% and not higher than 30%. The non-diamond carbon phase occupancy rate is a percentage of an area of the non-diamond carbon phase to a total area of one arbitrarily specified cross section of the composite sintered body. As a result, there is provided a high wear-resistant, high local wear-resistant and high chipping-resistant diamond-containing composite sintered body suitably used as a material for a wear-resistant tool, a cutting tool and the like.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: October 29, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takeshi Satoh, Hitoshi Sumiya
  • Patent number: 10442007
    Abstract: A composite polycrystal contains polycrystalline diamond formed of diamond grains that are directly bonded mutually, and compressed graphite dispersed in the polycrystalline diamond.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: October 15, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi Sumiya, Takeshi Sato
  • Publication number: 20190300439
    Abstract: Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, hydrogen, oxygen, and the remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; hydrogen and oxygen are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.
    Type: Application
    Filed: November 29, 2017
    Publication date: October 3, 2019
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuhiro IKEDA, Keiko ARIMOTO, Katsuko YAMAMOTO, Hitoshi SUMIYA
  • Publication number: 20190293536
    Abstract: An indenter is made of polycrystalline diamond and has a tip having a spherical surface with a radius of 10 to 2000 ?m.
    Type: Application
    Filed: March 29, 2018
    Publication date: September 26, 2019
    Inventors: Kensei Hamaki, Katsuko Yamamoto, Hitoshi Sumiya, Yuh Ishida