Patents by Inventor Hitoshi Sumiya

Hitoshi Sumiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190300439
    Abstract: Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, hydrogen, oxygen, and the remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; hydrogen and oxygen are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.
    Type: Application
    Filed: November 29, 2017
    Publication date: October 3, 2019
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuhiro IKEDA, Keiko ARIMOTO, Katsuko YAMAMOTO, Hitoshi SUMIYA
  • Publication number: 20190293536
    Abstract: An indenter is made of polycrystalline diamond and has a tip having a spherical surface with a radius of 10 to 2000 ?m.
    Type: Application
    Filed: March 29, 2018
    Publication date: September 26, 2019
    Inventors: Kensei Hamaki, Katsuko Yamamoto, Hitoshi Sumiya, Yuh Ishida
  • Patent number: 10421129
    Abstract: A polycrystalline diamond body contains diamond particles, the diamond particles have a mean particle size of 50 nm or less, and a crack initiation load is 10 N or more as measured in a fracture strength test by pressing a diamond indenter D with a tip radius Dr of 50 ?m against a surface of the polycrystalline diamond body at a load rate F of 100 N/min. Accordingly, a polycrystalline diamond body that is tough and has a small diamond particle size, a cutting tool, a wear-resistant tool, a grinding tool, and a method for producing the polycrystalline diamond body are provided.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: September 24, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yuh Ishida, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya
  • Patent number: 10399149
    Abstract: A composite polycrystal contains polycrystalline diamond formed of diamond grains that are directly bonded mutually, and non-diamond carbon dispersed in the polycrystalline diamond, and has a concentration of contained hydrogen of greater than 1000 ppm and less than or equal to 20000 ppm.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: September 3, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi Sumiya, Takeshi Sato
  • Publication number: 20190248652
    Abstract: A method of producing a boron nitride polycrystal includes: a first step of obtaining a thermally treated powder by thermally treating a powder of a high pressure phase boron nitride at more than or equal to 1300° C.; and a second step of obtaining a boron nitride polycrystal by sintering the thermally treated powder under a condition of 8 to 20 GPa and 1200 to 2300° C.
    Type: Application
    Filed: August 25, 2017
    Publication date: August 15, 2019
    Inventors: Yuh Ishida, Hitoshi Sumiya
  • Publication number: 20190218685
    Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
    Type: Application
    Filed: March 20, 2019
    Publication date: July 18, 2019
    Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Akihiko Ueda, Yutaka Kobayashi
  • Patent number: 10316430
    Abstract: Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: June 11, 2019
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Akihiko Ueda, Yutaka Kobayashi
  • Patent number: 10287708
    Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: May 14, 2019
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Akihiko Ueda, Yutaka Kobayashi
  • Patent number: 10280531
    Abstract: A method for producing a diamond single crystal includes implanting an ion other than carbon into a surface of a diamond single crystal seed substrate and thereby decreasing the transmittance of light having a wavelength of 800 nm, the surface having an off-angle of 7 degrees or less with respect to a {100} plane, and homoepitaxially growing a diamond single crystal on the ion-implanted surface of the seed substrate using a chemical vapor synthesis under synthesis conditions where the ratio NC/NH of the number of carbon-containing molecules NC to the number of hydrogen molecules NH in a gas phase is 10% or more and 40% or less, the ratio NN/NC of the number of nitrogen molecules NN to the number of carbon-containing molecules NC in the gas phase is 0.1% or more and 10% or less, and the seed substrate temperature T is 850° C. or more and less than 1000° C.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: May 7, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Akihiko Ueda, Yoshiki Nishibayashi, Hitoshi Sumiya
  • Publication number: 20190060968
    Abstract: A wear-resistant tool includes composite polycrystalline diamond as a core, the composite polycrystalline diamond being composed of polycrystalline diamond in which particulate diamond is directly bonded and non diamond carbon. The polycrystalline diamond in the composite polycrystalline diamond is three-dimensionally continuous in composite polycrystal and primary particles have an average particle size from 10 to 500 nm.
    Type: Application
    Filed: October 19, 2016
    Publication date: February 28, 2019
    Inventors: Hitoshi Sumiya, Takeshi Sato, Makoto Yukawa, Bunya Suemitsu
  • Publication number: 20190031515
    Abstract: Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
    Type: Application
    Filed: January 18, 2017
    Publication date: January 31, 2019
    Inventors: Takuya Nohara, Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya, Yutaka Kobayashi, Akihiko Ueda
  • Patent number: 10118861
    Abstract: A composite polycrystal contains polycrystalline diamond formed of diamond grains that are directly bonded mutually, and non-diamond carbon dispersed in the polycrystalline diamond, and has a concentration of contained hydrogen of less than or equal to 1000 ppm.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: November 6, 2018
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi Sumiya, Takeshi Sato
  • Publication number: 20180304378
    Abstract: Provided is a method for producing a polycrystalline diamond body, the method including a first step of heat-treating a powder of high-pressure-phase carbon at higher than or equal to 1300° C. to obtain a heat-treated carbon powder, and a second step of sintering the heat-treated carbon powder under conditions of greater than or equal to 12 GPa and less than or equal to 25 GPa and higher than or equal to 1200° C. and lower than or equal to 2300° C. to obtain a polycrystalline diamond body.
    Type: Application
    Filed: September 12, 2017
    Publication date: October 25, 2018
    Inventors: Yuh Ishida, Hitoshi Sumiya
  • Publication number: 20180265416
    Abstract: It is an object to provide a cubic boron nitride polycrystalline material excellent in toughness. A cubic boron nitride polycrystalline material containing fine cubic boron nitride which is granular, has a maximum grain size not greater than 100 nm, and has an average grain size not greater than 70 nm and at least one of plate-shaped cubic boron nitride in a form of a plate having an average major radius not smaller than 50 nm and not greater than 10000 nm and coarse cubic boron nitride which is granular, has a minimum grain size exceeding 100 nm, and has an average grain size not greater than 1000 nm is provided.
    Type: Application
    Filed: January 13, 2016
    Publication date: September 20, 2018
    Inventors: Yuh Ishida, Katsuko Yamamoto, Hitoshi Sumiya
  • Publication number: 20180257992
    Abstract: Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.
    Type: Application
    Filed: May 15, 2018
    Publication date: September 13, 2018
    Inventors: Kazuhiro Ikeda, Keiko Arimoto, Katsuko Yamamoto, Hitoshi Sumiya, Takeshi Sato
  • Publication number: 20180207697
    Abstract: A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.
    Type: Application
    Filed: July 22, 2016
    Publication date: July 26, 2018
    Inventors: Makoto Yukawa, Bunya Suemitsu, Takuya Kinoshita, Shigetoshi Sumimoto, Yutaka Kobayashi, Akihiko Ueda, Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya
  • Publication number: 20180141818
    Abstract: The present diamond single crystal is a diamond single crystal containing nitrogen atoms, in which a concentration of the nitrogen atoms changes periodically along a crystal orientation of the diamond single crystal, and an arithmetic average value Aave, a maximum value Amax, and a minimum value Amin of the distance of one period along the crystal orientation satisfy the relationship expressed by the following equation (I): (Amax)/1.25?(Aave)?(Amin)/0.75??(I).
    Type: Application
    Filed: June 1, 2016
    Publication date: May 24, 2018
    Inventors: Katsuko Yamamoto, Keiko Arimoto, Hitoshi Sumiya
  • Patent number: 9963801
    Abstract: A single crystal diamond (10) is provided as a single crystal diamond into which a defect portion (11) is introduced. The defect portion (11) can be detected by a phase difference occurring when the single crystal diamond (10) is irradiated with circularly polarized light. In the single crystal diamond (10), a maximum value of average values of the phase differences measured within a measurement region (M) formed in a shape of a square having a side length of 1 mm is 30 nm or more.
    Type: Grant
    Filed: April 2, 2014
    Date of Patent: May 8, 2018
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Yoshiki Nishibayashi, Akihiko Ueda, Hitoshi Sumiya, Yutaka Kobayashi, Yuichiro Seki, Toshiya Takahashi
  • Patent number: 9957640
    Abstract: A single crystal diamond has a surface. In the single crystal diamond, a measurement region is defined in the surface, the measurement region includes a portion exhibiting a transmittance that is highest in the single crystal diamond and a portion exhibiting a transmittance that is lowest in the single crystal diamond, the measurement region has a plurality of square regions that are continuously arranged and each have a side having a length of 0.2 mm, and an average value of transmittances in each of the plurality of square regions is measured, wherein assuming that the average value of the transmittances in one square region is defined as T1 and the average value of the transmittances in another square region adjacent to the one square region is defined as T2, a relation of ((T1?T2)/((T1+T2)/2)×100)/0.2?20 (%/mm) is satisfied throughout the measurement region.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: May 1, 2018
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Yoshiki Nishibayashi, Akihiko Ueda, Hitoshi Sumiya, Yutaka Kobayashi, Yuichiro Seki, Toshiya Takahashi
  • Patent number: 9950960
    Abstract: A composite sintered body includes a first phase and a second phase. The first phase is a diamond phase, and the second phase is a phase formed of one or more types of elements or compounds or both thereof and applying strain to the first phase. A contained amount of the second phase is larger than 0 ppm and not larger than 1000 ppm. As a result, there is provided a high wear-resistant, high local wear-resistant, and high chipping-resistant diamond-containing composite sintered body.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: April 24, 2018
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takeshi Satoh, Hitoshi Sumiya