Abstract: In an image processing apparatus, an acquiring unit acquires a document comprising a plurality of images. A display screen includes a plurality of thumbnail images arranged linearly and in a sequence, each of the thumbnail images being generated from a corresponding one of the plurality of images acquired by the acquiring unit. An input unit receives a selection input and a process input. In response to the selection input, a control unit controls the display unit to update the screen so that a displayed size of the selected thumbnail image is larger than a displayed size of the thumbnail image of the subsequent page. The control unit controls the display unit to update the screen as indicated by the process input. The control unit provides the document with the plurality of images in the changed order to a selected destination.

Abstract: In an image processing apparatus, an acquiring unit acquires a document comprising a plurality of images. A display screen includes a plurality of thumbnail images arranged linearly and in a sequence, each of the thumbnail images being generated from a corresponding one of the plurality of images acquired by the acquiring unit. An input unit receives a selection input and a process input. In response to the selection input, a control unit controls the display unit to update the screen so that a displayed size of the selected thumbnail image is larger than a displayed size of the thumbnail image of the subsequent page. The control unit controls the display unit to update the screen as indicated by the process input. The control unit provides the document with the plurality of images in the changed order to a selected destination.

Abstract: An image processing device according to an embodiment includes a display unit that displays a FAX destination registration screen having a destination registration region and a destination input region in which a plurality of selectable FAX destinations are displayed. An input unit configured receives a destination registration input with respect to the destination input region, the destination registration input indicating a selected FAX destination from the plurality of selectable FAX destinations. The input unit also receives a transmission input. In response to the destination registration input, a control unit controls the display unit to display a plurality of FAX destinations, including the selected FAX destination, in the destination registration region. In response to the transmission input, the control unit transmits an image to each FAX destination displayed in the destination registration region.

Abstract: An image processing device according to an embodiment includes a display unit that displays a FAX destination registration screen having a destination registration region and a destination input region in which a plurality of selectable FAX destinations are displayed. An input unit configured receives a destination registration input with respect to the destination input region, the destination registration input indicating a selected FAX destination from the plurality of selectable FAX destinations. The input unit also receives a transmission input. In response to the destination registration input, a control unit controls the display unit to display a plurality of FAX destinations, including the selected FAX destination, in the destination registration region. In response to the transmission input, the control unit transmits an image to each FAX destination displayed in the destination registration region.

Abstract: An image processing device according to an embodiment includes a display unit that displays a FAX destination registration screen having a destination registration region and a destination input region in which a plurality of selectable FAX destinations are displayed. An input unit configured receives a destination registration input with respect to the destination input region, the destination registration input indicating a selected FAX destination from the plurality of selectable FAX destinations. The input unit also receives a transmission input. In response to the destination registration input, a control unit controls the display unit to display a plurality of FAX destinations, including the selected FAX destination, in the destination registration region. In response to the transmission input, the control unit transmits an image to each FAX destination displayed in the destination registration region.

Abstract: An image processing apparatus according to an embodiment includes a display unit that displays a destination selection screen and a destination registration screen. A detection unit detects a selection with respect to the destination selection screen indicating a selected destination from a plurality of selectable destinations. An interface connects an external input device to the image processing apparatus, and receives an input from the external input device. The destination registration screen is updated to display one or more selected destinations. In response to the input being received from the external input device, the display unit changes the first region of the operation screen from the destination selection screen to an input screen in which destination information input using the external input device is displayed. In response to a detected transmission input, an image is transmitted to each destination displayed in the destination registration region.

Abstract: An image processing device according to an embodiment includes a display unit that displays a FAX destination registration screen having a destination registration region and a destination input region in which a plurality of selectable FAX destinations are displayed. An input unit configured receives a destination registration input with respect to the destination input region, the destination registration input indicating a selected FAX destination from the plurality of selectable FAX destinations. The input unit also receives a transmission input. In response to the destination registration input, a control unit controls the display unit to display a plurality of FAX destinations, including the selected FAX destination, in the destination registration region. In response to the transmission input, the control unit transmits an image to each FAX destination displayed in the destination registration region.

Abstract: In an image processing apparatus, an acquiring unit acquires a document comprising a plurality of images. A display screen includes a plurality of thumbnail images arranged linearly and in a sequence, each of the thumbnail images being generated from a corresponding one of the plurality of images acquired by the acquiring unit. An input unit receives a selection input and a process input. In response to the selection input, a control unit controls the display unit to update the screen so that a displayed size of the selected thumbnail image is larger than a displayed size of the thumbnail image of the subsequent page. The control unit controls the display unit to update the screen as indicated by the process input. The control unit provides the document with the plurality of images in the changed order to a selected destination.

Abstract: Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.

Abstract: A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer (H) and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.

Abstract: A deposition apparatus includes a processing chamber internally having a reduced-pressure space for deposition process to be carried out therein, a base material holding member for holding a base material to be subjected to the deposition process, a target support member for supporting a target thereon, and a power supply unit for applying electric power to the target support member to generate a plasma in the reduced-pressure space. In the deposition apparatus, deposition process is carried out by using the target, which has a recess portion in its surface and in which a powder target formed of a powder material is placed in an inner surface of the recess portion. Thus, the in-plane uniformity of deposition rate is improved and a stable film deposition is fulfilled.

Abstract: Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.

Abstract: Disclosed is a process for producing a silicon powder, which comprises the steps of: powderizing a silicon ingot having a grade of 99.999% or more into a crude silicon powder having a particle diameter of 3 mm or less by means of high-pressure purified-water cutting; and reducing the crude silicon powder into a silicon powder having a particle diameter ranging from 0.01 to 10 [mu]m inclusive by means of at least one method selected from jet milling, wet granulation, ultrasonic wave disruption and shock wave disruption. The process is a technique for producing a silicon powder rapidly from a silicon ingot without reducing purity.

Abstract: A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.

Abstract: The present invention is to provide a sputtering apparatus and a sputtering method, specifically, a magnetron sputtering apparatus having a magnetron electrode capable of generating plasma in a wide region near the surface of a target, and a sputtering method using the apparatus. Thereby, a magnetic field shape enabling to generate plasma in a wide region near the surface of a target is realized, the use efficiency of the target material is increased, and dusts and abnormal electric discharges may be prevented. Magnetic circuit 10 of a magnetron electrode is set as “magnetic circuit 10 in which center perpendicular magnet 101, inside parallel magnet 103, outside parallel magnet 104, and perimeter perpendicular magnet 102 are arranged” from the central part of target 2 toward the perimeter part, and inside parallel magnet 103 is brought close to target 2.

Abstract: An electrode on a first surface of a semiconductor substrate and a second surface of the semiconductor substrate are connected with each other by a through electrode. A through hole is formed through the semiconductor substrate from the second surface of the semiconductor substrate to an interlayer insulating film on the first surface, and an insulating film is formed on a side surface and a bottom surface of the through hole as well as on the second surface of the semiconductor substrate, so that by simultaneously etching the insulating film on the bottom surface of the through hole and the interlayer insulating film, thus formed, the through hole is formed so as to reach the electrode on the first surface of the semiconductor substrate.

Abstract: Provided is a partial pressure measuring method and a partial pressure measuring apparatus by which a partial pressure distribution is easily measured in a vacuum chamber. The partial pressure measuring method and the partial pressure measuring apparatus includes: moving a local plasma source dedicated to partial pressure measuring provided in the vacuum chamber, to a location at which the measuring is to be performed; and measuring a partial pressure distribution in the vacuum chamber, by receiving emission of plasma generated by the local plasma source through a window which is formed in a wall part of the vacuum chamber and through which the emission passes, and thereby performing emission spectral analysis on intensity of the emission.

Abstract: The present invention is to provide a sputtering apparatus and a sputtering method, specifically, a magnetron sputtering apparatus having a magnetron electrode capable of generating plasma in a wide region near the surface of a target, and a sputtering method using the apparatus. Thereby, a magnetic field shape enabling to generate plasma in a wide region near the surface of a target is realized, the use efficiency of the target material is increased, and dusts and abnormal electric discharges may be prevented. Magnetic circuit 10 of a magnetron electrode is set as “magnetic circuit 10 in which center perpendicular magnet 101, inside parallel magnet 103, outside parallel magnet 104, and perimeter perpendicular magnet 102 are arranged” from the central part of target 2 toward the perimeter part, and inside parallel magnet 103 is brought close to target 2.

Abstract: Provided is a partial pressure measuring method and a partial pressure measuring apparatus by which a partial pressure distribution is easily measured in a vacuum chamber. The partial pressure measuring method and the partial pressure measuring apparatus includes: moving a local plasma source dedicated to partial pressure measuring provided in the vacuum chamber, to a location at which the measuring is to be performed; and measuring a partial pressure distribution in the vacuum chamber, by receiving emission of plasma generated by the local plasma source through a window which is formed in a wall part of the vacuum chamber and through which the emission passes, and thereby performing emission spectral analysis on intensity of the emission.

Abstract: A deposition apparatus includes a processing chamber internally having a reduced-pressure space for deposition process to be carried out therein, a base material holding member for holding a base material to be subjected to the deposition process, a target support member for supporting a target thereon, and a power supply unit for applying electric power to the target support member to generate a plasma in the reduced-pressure space. In the deposition apparatus, deposition process is carried out by using the target, which has a recess portion in its surface and in which a powder target formed of a powder material is placed in an inner surface of the recess portion. Thus, the in-plane uniformity of deposition rate is improved and a stable film deposition is fulfilled.