Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes are stacked with the dielectric layers interposed therebetween, external electrodes disposed on an external surface of the body to be connected to the internal electrodes, and including a first electrode layer disposed on a first surface of the body to which the internal electrodes are exposed, and a second electrode layer covering the first electrode layer, a first insulating coating layer disposed between the first and second electrode layers and having a discontinuous region, and a second insulating coating layer having a discontinuous region to cover at least a portion of a surface of the body. The second insulating coating layer is exposed from the external electrodes.

Abstract: A multilayer electronic component includes a body including a plurality of internal electrodes and a dielectric layer interposed between the plurality of internal electrodes; external electrodes disposed on the body, connected to the plurality of internal electrodes, and including electrode layers and plating layers respectively covering the electrode layers; and coating layers respectively covering the plating layer and including an island region exposing a portion of a surface of the plating layer.

Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes are stacked with the dielectric layers interposed therebetween, external electrodes disposed on an external surface of the body to be connected to the internal electrodes, and including a first electrode layer disposed on a first surface of the body to which the internal electrodes are exposed, and a second electrode layer covering the first electrode layer, a first insulating coating layer disposed between the first and second electrode layers and having a discontinuous region, and a second insulating coating layer having a discontinuous region to cover at least a portion of a surface of the body. The second insulating coating layer is exposed from the external electrodes.

Abstract: A capacitor component includes: a semiconductor substrate including first and second portions, a trench penetrating through the substrate from one surface of the substrate to the other surface of the substrate to separate the first and second portions of the substrate from each other, a dielectric layer disposed in the trench and on the one surface of the substrate; a first pad electrode and a second pad electrode spaced apart from each other, and penetrating through the dielectric layer to be in contact with the first and second portions of the substrate, respectively, and a passivation layer disposed on the dielectric layer, covering portions of the first pad electrode and the second pad electrode, and exposing at least a portion of each of the first pad electrode and the second pad electrode.

Abstract: An aerogel capacitor includes: a substrate including a capacitor structure including an aerogel, a dielectric layer and a conductive layer, and a support surrounding the capacitor structure; and an electrode unit including a first electrode and a second electrode provided on the substrate. The first electrode is connected to the aerogel and the second electrode is connected to the conductive layer.

Abstract: A thin film capacitor includes a body including a lower electrode formed on a substrate, a plurality of first electrode layers, and a plurality of second electrode layers stacked alternately with the plurality of first electrode layers, with one of the dielectric layers interposed therebetween. The lower electrode and the first electrode layer have the same polarity as each other, and surface roughness of the first and second electrode layers is less than that of the dielectric layers, thereby securing capacitance and characteristics of the dielectric layers.

Abstract: A thin film capacitor includes a body including alternately stacked first and second electrode layers and dielectric layers on a substrate, the second electrode layer including a second lower electrode layer and a second upper electrode layer formed on the second lower electrode layer, the second lower electrode layer including a material having a higher band gap energy than the first electrode layer and the second upper electrode layer.

Abstract: A capacitor component includes: a semiconductor substrate including first and second portions, a trench penetrating through the substrate from one surface of the substrate to the other surface of the substrate to separate the first and second portions of the substrate from each other, a dielectric layer disposed in the trench and on the one surface of the substrate; a first pad electrode and a second pad electrode spaced apart from each other, and penetrating through the dielectric layer to be in contact with the first and second portions of the substrate, respectively, and a passivation layer disposed on the dielectric layer, covering portions of the first pad electrode and the second pad electrode, and exposing at least a portion of each of the first pad electrode and the second pad electrode.

Abstract: A thin-film capacitor includes a body having a plurality of dielectric layers and first and second electrode layers alternately stacked on a substrate, first and second electrode pads disposed on one surface of the body, a plurality of vias having a multistage shape being disposed in the body, a first via of the plurality of vias connects the first electrode layer to the first electrode pad, and penetrates from the surface of the body to a first lowermost electrode layer adjacent the substrate, a second via of the plurality of vias connects the second electrode layer to the second electrode pad, and penetrates from the surface of the body to a second lowermost electrode layer adjacent the substrate and an upper surface of the first electrode layer is exposed in the first via, and an upper surface of the second electrode layer is exposed in the second via.

Abstract: A piezoelectric oscillator, and method of making the same, includes an oscillation substrate comprising an oscillating part and a surrounding part, wherein the surrounding part is thinner than the oscillating part, and oscillating electrodes disposed on an upper surface and a lower surface of the oscillating part. The oscillation substrate is configured according to H=400.59×S+1.75±1.5, wherein H=100×(T2/T1) and S=T2/(L1?L2), wherein L1 represents an entire length of the oscillation substrate, L2 represents a length of the oscillating part, T1 represents a thickness of the oscillating part, and T2 represents a step height between the oscillating part and the surrounding part.

Abstract: An aerogel capacitor includes: a substrate including a capacitor structure including an aerogel, a dielectric layer and a conductive layer, and a support surrounding the capacitor structure; and an electrode unit including a first electrode and a second electrode provided on the substrate. The first electrode is connected to the aerogel and the second electrode is connected to the conductive layer.

Abstract: A thin film capacitor includes a body having first and second electrode layers and first and second dielectric layers alternately stacked on a substrate. A thickness of the first dielectric layer is 1.2 to 3 times that of the second dielectric layer. Therefore, leakage current characteristics of the dielectric layers may be improved, and capacitance of the thin film capacitor may be secured.

Abstract: A thin film capacitor includes a body including alternately stacked first and second electrode layers and dielectric layers on a substrate, the second electrode layer including a second lower electrode layer and a second upper electrode layer formed on the second lower electrode layer, the second lower electrode layer including a material having a higher band gap energy than the first electrode layer and the second upper electrode layer.

Abstract: A thin-film capacitor includes a body having a plurality of dielectric layers and first and second electrode layers alternately stacked on a substrate, first and second electrode pads disposed on one surface of the body, a plurality of vias having a multistage shape being disposed in the body, a first via of the plurality of vias connects the first electrode layer to the first electrode pad, and penetrates from the surface of the body to a first lowermost electrode layer adjacent the substrate, a second via of the plurality of vias connects the second electrode layer to the second electrode pad, and penetrates from the surface of the body to a second lowermost electrode layer adjacent the substrate and an upper surface of the first electrode layer is exposed in the first via, and an upper surface of the second electrode layer is exposed in the second via.

Abstract: A thin film capacitor includes a body having first and second electrode layers and first and second dielectric layers alternately stacked on a substrate. A thickness of the first dielectric layer is 1.2 to 3 times that of the second dielectric layer. Therefore, leakage current characteristics of the dielectric layers may be improved, and capacitance of the thin film capacitor may be secured.

Abstract: A thin-film capacitor includes: a body in which a plurality of dielectric layers and first and second internal electrodes are alternately disposed on a substrate; and first and second external electrode disposed on an external surface of the body. A plurality of vias are disposed in the body, a first via connects first internal electrodes to each other, and penetrates from the external surface of the body to the lowermost first internal electrode, a second via connects second internal electrodes to each other, and penetrates from the external surface of the body to the lowermost second internal electrode, and the plurality of vias have a multistage shape, and at least one internal electrode has an etched portion of 0.3 to 0.7 layer in relation to one layer of the internal electrode.

Abstract: A thin film capacitor includes a body including a lower electrode formed on a substrate, a plurality of first electrode layers, and a plurality of second electrode layers stacked alternately with the plurality of first electrode layers, with one of the dielectric layers interposed therebetween. The lower electrode and the first electrode layer have the same polarity as each other, and surface roughness of the first and second electrode layers is less than that of the dielectric layers, thereby securing capacitance and characteristics of the dielectric layers.

Abstract: Embodiments of the invention provide a quartz crystal vibrator including an AT-cut quartz crystal piece having a long side in an X axis direction and including first and second crystal planes formed on at least one side surface thereof in a Y? axis direction, and an electrode layer formed on the AT-cut quartz crystal piece.

Abstract: Embodiments of the invention provide a quartz vibrator, including a long side in a Y? axis direction, a side in the Y? axis direction including a first crystal face and a second crystal face formed thereon, and another side including an AT-cut quartz piece including a first crystal face and a second crystal face formed thereon and electrode layers formed on the AT-cut quartz piece.

Abstract: A piezoelectric oscillator, and method of making the same, includes an oscillation substrate comprising an oscillating part and a surrounding part, wherein a the surrounding part is thinner than the oscillating part, and oscillating electrodes disposed on an upper surface and a lower surface of the oscillating part. The oscillation substrate is configured according to H=400.59×X+1.75±1.5, wherein H=100×(T2/T1) and S=T2/(L1?L2), wherein L1 represents an entire length of the oscillation substrate, L2 represents a length of the oscillating part, T1 represents a thickness of the oscillating part, and T2 represents a step height between the oscillating part and the surrounding part.