Abstract: A photovoltaic device includes an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate. It further includes a top contact formed in contact with a transparent conductive layer opposite the back contact and a stressor layer forming a superstrate on the absorber layer opposite the back contact.

Abstract: A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

Abstract: A photoelectric conversion element comprises: a first electrode layer 12; a compound-based photoelectric conversion layer 13 disposed on the first electrode layer 12; a buffer layer 15 disposed on the compound-based photoelectric conversion layer 13 comprising a mixed crystal of ZnO and ZnS, wherein a ratio of the number of S atoms to the number of Zn atoms is in a range of 0.290 to 0.493; and a second electrode layer 16 disposed on the buffer layer 15.

Abstract: A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

Abstract: A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

Abstract: A method for manufacturing a solar cell includes the following steps: a step in which a first electrode layer is formed on top of a substrate; a step in which a selenium-containing p-type CZTS light-absorbing layer is formed on top of the first electrode layer; a step in which the surface of the CZTS light-absorbing layer is brought into contact with an aqueous solution containing an organic sulfur compound, increasing the concentration of sulfur on the surface of the CZTS light-absorbing layer, and an n-type buffer layer is formed on top of CZTS light-absorbing layer; and a step in which a second electrode layer is formed on top of said buffer layer.

Abstract: A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

Abstract: A thin film solar cell comprises a metal rear surface electrode layer formed on a substrate, a p-type CZTS light-absorbing layer formed on the electrode layer, an n-type high-resistance buffer layer containing a zinc compound as a material and formed on the p-type CZTS light-absorbing layer, and an n-type transparent electroconductive film formed on the n-type high-resistance buffer layer. When the Cu—Zn—Sn composition ratio (atom ratio) of the p-type CZTS light-absorbing layer is represented by coordinates with the Cu/(Zn+Sn) ratio shown on the horizontal axis and the Zn/Sn ratio shown on the vertical axis, the ratio is within the region formed by connecting point A (0.825, 1.108), point B (1.004, 0.905), point C (1.004, 1.108), point E (0.75, 1.6), and point D (0.65, 1.5), and the Zn/Sn ratio of the p-type CZTS light-absorbing layer surface in the n-type high-resistance buffer layer is 1.11 or less.

Abstract: A compound-based thin film solar cell which has a high photovoltaic conversion efficiency is obtained. The compound-based thin film solar cell is provided with substrate (1), back surface electrode layer (2) formed on substrate (1), p-type light absorption layer (3) formed on back surface electrode layer (2), n-type high resistance buffer layer (4) formed on p-type light absorption layer (3), and ZnO film (5) formed on n-type high resistance buffer layer (4), where n-type high resistance buffer layer (4) includes a first buffer layer (4A) formed on the p-type light absorption layer (3) and a second buffer layer (4B) formed on the first buffer layer (4A) and where the second buffer layer (4B) is formed by a material which has a lattice constant closer to the lattice constant of the ZnO film (5) than the first buffer layer (4A).

Abstract: A compound-based thin film solar cell which has a high photovoltaic conversion efficiency is obtained. The compound-based thin film solar cell is provided with substrate (1), back surface electrode layer (2) formed on substrate (1), p-type light absorption layer (3) formed on back surface electrode layer (2), n-type high resistance buffer layer (4) formed on p-type light absorption layer (3), and ZnO film (5) formed on n-type high resistance buffer layer (4), where n-type high resistance buffer layer (4) includes a first buffer layer (4A) formed on the p-type light absorption layer (3) and a second buffer layer (4B) formed on the first buffer layer (4A) and where the second buffer layer (4B) is formed by a material which has a lattice constant closer to the lattice constant of the ZnO film (5) than the first buffer layer (4A).

Abstract: A thin-film solar cell which uses an InS-based buffer layer is produced by forming a metal back electrode layer on a substrate, forming a p-type light absorption layer on the metal back electrode layer, oxidizing the p-type light absorption layer surface, forming an InS-based buffer layer as an n-type high resistance buffer layer on the oxidized p-type light absorption layer, and forming an n-type transparent conductive film on the InS-based buffer layer.

Abstract: A thin film solar cell comprises a metal rear surface electrode layer formed on a substrate, a p-type CZTS light-absorbing layer formed on the electrode layer, an n-type high-resistance buffer layer containing a zinc compound as a material and formed on the p-type CZTS light-absorbing layer, and an n-type transparent electroconductive film formed on the n-type high-resistance buffer layer. When the Cu—Zn—Sn composition ratio (atom ratio) of the p-type CZTS light-absorbing layer is represented by coordinates with the Cu/(Zn+Sn) ratio shown on the horizontal axis and the Zn/Sn ratio shown on the vertical axis, the ratio is within the region formed by connecting point A (0.825, 1.108), point B (1.004, 0.905), point C (1.004, 1.108), point E (0.75, 1.6), and point D (0.65, 1.5), and the Zn/Sn ratio of the p-type CZTS light-absorbing layer surface in the n-type high-resistance buffer layer is 1.11 or less.