Abstract: Provided is a method of preparing a nanocomposite material plated with a network-type metal layer through silica self-cracks and a wearable electronics carbon fiber prepared therefrom. The present disclosure provides a nanocomposite material having excellent electrical conductivity and bending resistance by plating a network-type metal layer on a substrate having a flat surface and/or a curved surface through a method of preparing the nanocomposite material in which the network-type metal layer is plated on silica self-cracks by applying a silica coating solution on the substrate having a flat or curved surface, performing drying after the applying of the silica coating solution to form the silica self-cracks having random crack directions and sizes, and performing electroless metal plating on the surface of the substrate. Further, the present disclosure provides a wearable electronics carbon fiber having excellent electrical conductivity and bending resistance.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: The present disclosure relates to a metal nanoparticles impregnated activated carbon fiber for removing harmful substances, and a method of manufacturing the same. A method of manufacturing a metal nanoparticles impregnated activated carbon fiber for removing harmful substances according to the present disclosure includes an activation step of manufacturing an activated carbon fiber by heat-treating a precursor including a waste carbon fiber under a mixed atmosphere of activation gases including water vapor, carbon monoxide, nitrogen, argon, helium, or combinations thereof, and a metal containing step of containing metal in the activated carbon fiber. According to the present disclosure, a carbonization process is unnecessary since a precursor including the waste carbon fiber is used, and the metal nanoparticles impregnated activated carbon fiber may have remarkably improved adsorptive power compared to an activated carbon fiber with the same specific surface area by controlling the micropore distribution.

Abstract: Provided is a method of preparing a nanocomposite material plated with a network-type metal layer through silica self-cracks and a wearable electronics carbon fiber prepared therefrom. The present disclosure provides a nanocomposite material having excellent electrical conductivity and bending resistance by plating a network-type metal layer on a substrate having a flat surface and/or a curved surface through a method of preparing the nanocomposite material in which the network-type metal layer is plated on silica self-cracks by applying a silica coating solution on the substrate having a flat or curved surface, performing drying after the applying of the silica coating solution to form the silica self-cracks having random crack directions and sizes, and performing electroless metal plating on the surface of the substrate. Further, the present disclosure provides a wearable electronics carbon fiber having excellent electrical conductivity and bending resistance.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.

Abstract: A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.

Abstract: Methods include sequentially forming a first mold film, a first support film, a second mold film, and a second support film on a substrate, forming a contact hole through the second support film, the second mold film, the first support film and the first mold film, forming an electrode in the contact hole, and removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode.

Abstract: A semiconductor device and a method of fabricating the same, the device including a substrate having a transistor formed thereon; a plurality of lower electrodes formed on the substrate; a first supporter and a second supporter on the plurality of lower electrodes; a dielectric film formed on the lower electrode, the first supporter, and the second supporter; and an upper electrode formed on the dielectric film, wherein the first and second supporters are positioned between the lower electrodes, and the first and second supporters include a first material and a second material.

Abstract: A semiconductor device and a method of fabricating the same, the device including a substrate having a transistor formed thereon; a plurality of lower electrodes formed on the substrate; a first supporter and a second supporter on the plurality of lower electrodes; a dielectric film formed on the lower electrode, the first supporter, and the second supporter; and an upper electrode formed on the dielectric film, wherein the first and second supporters are positioned between the lower electrodes, and the first and second supporters include a first material and a second material.

Abstract: Methods include sequentially forming a first mold film, a first support film, a second mold film, and a second support film on a substrate, forming a contact hole through the second support film, the second mold film, the first support film and the first mold film, forming an electrode in the contact hole, and removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode.

Abstract: A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the second trench, and forming a second insulator on the first insulator in the second trench.

Abstract: A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the second trench, and forming a second insulator on the first insulator in the second trench.

Abstract: A method of manufacturing a semiconductor device includes an improved technique of filling a trench to provide the resulting semiconductor device with better characteristics and higher reliability. The method includes forming a trench in a semiconductor layer, forming a first layer on the semiconductor layer using a silicon source and a nitrogen source to fill the trench, curing the first layer using an oxygen source, and annealing the second layer. The method may also be used to form other types of insulating layers such as an interlayer insulating layer.