Patents by Inventor Hong-Je Cho

Hong-Je Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11498062
    Abstract: Methods and phosphorus-containing solid catalysts for catalyzing dehydration of cyclic ethers (e.g., furans, such as 2,5-dimethylfuran) and alcohols (e.g., ethanol and isopropanol). The alcohols and cyclic ethers may be derived from biomass. One example includes a tandem Diels-Alder cycloaddition and dehydration of biomass-derived 2,5-dimethyl-furan and ethylene to renewable p-xylene. The phosphorus-containing solid catalysts are also active and selective for dehydration of alcohols to alkenes.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: November 15, 2022
    Assignees: Regents of the University of Minnesota, University of Massachusetts Amherst, University of Delaware
    Inventors: Hong Je Cho, Wei Fan, Michael Tsapatsis, Paul J. Dauenhauer, Limin Ren, Raul Lobo
  • Publication number: 20190344252
    Abstract: Methods and phosphorus-containing solid catalysts for catalyzing dehydration of cyclic ethers (e.g., furans, such as 2,5-dimethylfuran) and alcohols (e.g., ethanol and isopropanol). The alcohols and cyclic ethers may be derived from biomass. One example includes a tandem Diels-Alder cycloaddition and dehydration of biomass-derived 2,5-dimethyl-furan and ethylene to renewable p-xylene. The phosphorus-containing solid catalysts are also active and selective for dehydration of alcohols to alkenes.
    Type: Application
    Filed: September 29, 2017
    Publication date: November 14, 2019
    Inventors: Hong Je Cho, Wei Fan, Michael Tsapatsis, Paul J. Dauenhauer, Limin Ren, Raul Lobo
  • Patent number: 7605091
    Abstract: The present invention provides a method for manufacturing a thin film transistor (TFT) array panel by forming a gate line having a gate electrode on an insulating substrate; sequentially depositing a gate insulating layer and a semiconductor layer on the gate line; forming a drain electrode and a data line having a source electrode on the gate insulating and semiconductor layers; and forming a pixel electrode connected to the drain electrode. These elements can be formed by photo-etching using an etchant containing 65 wt % to 75 wt % of phosphoric acid, 0.5 wt % to 15 wt % of nitric acid, 2 wt % to 15 wt % of acetic acid, 0.1 wt % to 8.0 wt % of a potassium compound, and deionized water. Each element of the TFT array panel can be patterned with the etchant of the invention under similar conditions, which simplifies a manufacturing process and saves costs and results in TFT elements having a good profile.
    Type: Grant
    Filed: November 2, 2005
    Date of Patent: October 20, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sick Park, Sung-Ho Kang, Hong-Je Cho
  • Publication number: 20080224093
    Abstract: Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)xLy, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
    Type: Application
    Filed: April 18, 2008
    Publication date: September 18, 2008
    Inventors: Hong-Sick Park, Hong-Je Cho, Sung-Chul Kang, Pong-Ok Park, An-Na Park
  • Patent number: 7371622
    Abstract: Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)XLY, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
    Type: Grant
    Filed: February 6, 2004
    Date of Patent: May 13, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sick Park, Hong-Je Cho, Sung-Chul Kang, Pong-Ok Park, An-Na Park
  • Patent number: 7329365
    Abstract: An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.
    Type: Grant
    Filed: August 23, 2005
    Date of Patent: February 12, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Je Cho, Seung-Yong Lee, Joon-Woo Lee, Jae-Yeon Lee, Seung-Hwan Chon, Yong-Suk Choi, Young-Chul Park, Jin-Su Kim, Kyu-Sang Kim, Dong-Uk Choi, Kwan-Tack Lim
  • Patent number: 7141180
    Abstract: A method of manufacturing a TFT array panel according to the present invention forms a gate wire on an insulating substrate. The gate wire includes a plurality of gate lines and a plurality of gate electrodes connected to the gate lines. A semiconductor layer and a gate insulating layer are sequentially formed and a data wire is formed thereon. The data wire includes a plurality of data lines intersecting the gate lines, a plurality of source electrodes connected to the data lines and placed close to the gate electrodes, and a plurality of drain electrodes opposite the source electrodes with respect to the gate electrodes. A passivation layer is deposited and patterned to form a plurality of contact holes exposing the drain electrodes at least.
    Type: Grant
    Filed: June 25, 2003
    Date of Patent: November 28, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sick Park, Sung-Chul Kang, Hong-Je Cho
  • Publication number: 20060163207
    Abstract: Disclosed is a substrate treating apparatus including a treatment solution dispenser supplying a treatment solution on a substrate, a transporting unit transporting the substrate, and a controller controlling the transporting unit so that the substrate is transported in an inclined position. The substrate is inclined sideways through a rotation with respect to an axis extending parallel to a transportation direction of the substrate. The rotation may be made in both directions in an alternating manner. The apparatus is useful for treating the substrate uniformly regardless of substrate size.
    Type: Application
    Filed: July 18, 2005
    Publication date: July 27, 2006
    Inventors: Young-sig Lee, Ki-hyun Kim, Hong-je Cho, Kwan-Tack Lim, Jae-kyeong Lee
  • Publication number: 20060094241
    Abstract: The present invention provides a method for manufacturing a thin film transistor (TFT) array panel by forming a gate line having a gate electrode on an insulating substrate; sequentially depositing a gate insulating layer and a semiconductor layer on the gate line; forming a drain electrode and a data line having a source electrode on the gate insulating and semiconductor layers; and forming a pixel electrode connected to the drain electrode. These elements can be formed by photo-etching using an etchant containing 65 wt % to 75 wt % of phosphoric acid, 0.5 wt % to 15 wt % of nitric acid, 2 wt % to 15 wt % of acetic acid, 0.1 wt % to 8.0 wt % of a potassium compound, and deionized water. Each element of the TFT array panel can be patterned with the etchant of the invention under similar conditions, which simplifies a manufacturing process and saves costs and results in TFT elements having a good profile.
    Type: Application
    Filed: November 2, 2005
    Publication date: May 4, 2006
    Inventors: Hong-Sick Park, Sung-Ho Kang, Hong-Je Cho
  • Publication number: 20060043332
    Abstract: An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.
    Type: Application
    Filed: August 23, 2005
    Publication date: March 2, 2006
    Inventors: Hong-Je Cho, Seung-Yong Lee, Joon-Woo Lee, Jae-Yeon Lee, Seung-Hwan Chon, Yong-Suk Choi, Young-Chul Park, Jin-Su Kim, Kyu-Sang Kim, Dong-Uk Choi, Kwan-Tack Lim
  • Publication number: 20060011912
    Abstract: With a metal pattern formation process and a method of manufacturing a thin film transistor array panel using the metal pattern formation process, an organometallic layer is formed by coating an organometallic complex containing metal. The organometallic layer is exposed to light through a photo mask, and developed to form a metal pattern.
    Type: Application
    Filed: July 24, 2002
    Publication date: January 19, 2006
    Inventors: Hong-Sick Park, Sung-Chul Kang, Hong-Je Cho, An-Na Park, Pong-ok Park, Chang-Oh Jeong
  • Publication number: 20050074558
    Abstract: A process solution supply system and method for advantageously supplying process solution are provided. A process solution supply device provides process solution at a controlled temperature to a processing unit for injection of the process solution onto substrates through a plurality of nozzles. The process solution is transported to the nozzles through a pathway, which in one example can include a piping arrangement. The pathway advantageously uses temperature control through contact piping, a thermo-sensor, and piping arrangement, such that the process solution injected through the plurality of nozzles is substantially equal to the temperature of the process solution originally supplied from the process solution supply device.
    Type: Application
    Filed: June 7, 2004
    Publication date: April 7, 2005
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hong-Je Cho, Jin-Su Kim, Sung-Chul Kang
  • Publication number: 20040242017
    Abstract: Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)XLY, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
    Type: Application
    Filed: February 6, 2004
    Publication date: December 2, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sick Park, Hong-Je Cho, Sung-Chul Kang, Pong-Ok Park, An-Na Park
  • Patent number: 6783919
    Abstract: The invention relates to a TFT-LCD high-performance stripper composition for a photoresist, and more particularly to a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, 15-50 wt % of carbitol, and 0.1-10 wt % of gallic acid. The invention also provides a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, and 15-50 wt % of carbitol. The stripper composition for a photoresist of the invention significantly reduces stripping time when applied to the TFT-LCD manufacturing process and leaves no impurity particles. By allowing the hard baking and ashing processes to be omitted, the gate process line can be simplified, which enables cost reduction. In addition, when it is applied to a process wherein silver (Ag) is used as reflective/transflective layer, it offers stripping ability and corrosion resistance of the pure Ag layer.
    Type: Grant
    Filed: November 21, 2002
    Date of Patent: August 31, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sik Park, Sung-Chul Kang, Hong-Je Cho, An-Na Park
  • Publication number: 20040101788
    Abstract: The invention relates to a TFT-LCD high-performance stripper composition for a photoresist, and more particularly to a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, 15-50 wt % of carbitol, and 0.1-10 wt % of gallic acid. The invention also provides a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, and 15-50 wt % of carbitol.
    Type: Application
    Filed: November 21, 2002
    Publication date: May 27, 2004
    Inventors: Hong-Sik Park, Sung-Chul Kang, Hong-Je Cho, An-Na Park
  • Publication number: 20040072444
    Abstract: A method of manufacturing a TFT array panel according to the present invention forms a gate wire on an insulating substrate. The gate wire includes a plurality of gate lines and a plurality of gate electrodes connected to the gate lines. A semiconductor layer and a gate insulating layer are sequentially formed and a data wire is formed thereon. The data wire includes a plurality of data lines intersecting the gate lines, a plurality of source electrodes connected to the data lines and placed close to the gate electrodes, and a plurality of drain electrodes opposite the source electrodes with respect to the gate electrodes. A passivation layer is deposited and patterned to form a plurality of contact holes exposing the drain electrodes at least.
    Type: Application
    Filed: June 25, 2003
    Publication date: April 15, 2004
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hong-Sick Park, Sung-Chul Kang, Hong-Je Cho