Patents by Inventor Hong Koo Kim

Hong Koo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11730005
    Abstract: Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: August 15, 2023
    Assignee: University of Pittsburgh—of the Commonwealth System of Higher Education
    Inventors: Hong Koo Kim, Daud Hasan Emon
  • Publication number: 20210399248
    Abstract: Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.
    Type: Application
    Filed: May 26, 2021
    Publication date: December 23, 2021
    Applicant: UNIVERSITY OF PITTSBURGH-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
    Inventors: HONG KOO KIM, DAUD HASAN EMON
  • Patent number: 11050031
    Abstract: Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: June 29, 2021
    Assignee: University of Pittsburgh-Of the Commonwealth System of Higher Education
    Inventors: Hong Koo Kim, Daud Hasan Emon
  • Publication number: 20200052233
    Abstract: Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.
    Type: Application
    Filed: October 17, 2019
    Publication date: February 13, 2020
    Applicant: UNIVERSITY OF PITTSBURGH-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
    Inventors: Hong Koo Kim, Daud Hasan Emon
  • Patent number: 10529938
    Abstract: Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: January 7, 2020
    Assignee: University of Pittsburgh—Of the Commonwealth System of Higher Education
    Inventors: Hong Koo Kim, Daud Hasan Emon
  • Publication number: 20180337359
    Abstract: Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.
    Type: Application
    Filed: May 16, 2018
    Publication date: November 22, 2018
    Applicant: UNIVERSITY OF PITTSBURGH-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
    Inventors: HONG KOO KIM, DAUD HASAN EMON
  • Publication number: 20180210214
    Abstract: A vertical dipole array structure includes a substrate that supports a film, which is not comprised of a negative-index metamaterial. The film includes a plurality of tilt-oriented portions and apertures. At least two of the tilt-oriented portions are separated by an aperture, and the tilt-oriented portions are configured such that incident radiation is redirected into a negative or positive refraction direction.
    Type: Application
    Filed: December 14, 2017
    Publication date: July 26, 2018
    Applicant: University of Pittsburgh - Of the Commonwealth System of Higher Education
    Inventors: Hong Koo KIM, Yun-Suk JUNG, Yonggang XI
  • Patent number: 9880393
    Abstract: A vertical dipole array structure includes a substrate that supports a film, which is not comprised of a negative-index metamaterial. The film includes a plurality of tilt-oriented portions and apertures. At least two of the tilt-oriented portions are separated by an aperture, and the tilt-oriented portions are configured such that incident radiation is redirected into a negative or positive refraction direction.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: January 30, 2018
    Assignee: University of Pittsburgh—Of the Commonwealth System of Higher Education
    Inventors: Hong Koo Kim, Yun-Suk Jung, Yonggang Xi
  • Publication number: 20160196948
    Abstract: An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.
    Type: Application
    Filed: March 11, 2016
    Publication date: July 7, 2016
    Applicant: UNIVERSITY OF PITTSBURGH-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
    Inventors: HONG KOO KIM, SIWAPON SRISONPHAN
  • Patent number: 9331189
    Abstract: An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.
    Type: Grant
    Filed: May 7, 2013
    Date of Patent: May 3, 2016
    Assignee: University of Pittsburgh—Of the Commonwealth System of Higher Education
    Inventors: Hong Koo Kim, Siwapon Srisonphan
  • Publication number: 20130247973
    Abstract: A vertical dipole array structure includes a substrate that supports a film, which is not comprised of a negative-index metamaterial. The film includes a plurality of tilt-oriented portions and apertures. At least two of the tilt-oriented portions are separated by an aperture, and the tilt-oriented portions are configured such that incident radiation is redirected into a negative or positive refraction direction.
    Type: Application
    Filed: July 21, 2011
    Publication date: September 26, 2013
    Inventors: Hong Koo Kim, Yun-Suk Jung, Yonggang Xi
  • Publication number: 20090298193
    Abstract: A method of inducing explosive atomization of materials is provided using a metal-oxide-semiconductor (MOS)-based structure under electrical excitation. Explosive atomization of the gate electrode and surrounding dielectric materials creates a microplasma that is substantially confined with the device at the metal/dielectric interface. The device can generate a microplasma in either the accumulation or inversion regime. The high degree of confinement of the microplasma allows chip-scale implementation of atomic emission spectroscopy and detection using a minimal amount of analyte.
    Type: Application
    Filed: April 30, 2009
    Publication date: December 3, 2009
    Inventors: Hong Koo Kim, Sung Jun Yoon
  • Publication number: 20090073434
    Abstract: A nanostructured optical device includes a metal film or a plurality of metal islands having an array of a plurality of openings having a width that is less than at least one first predetermined wavelength of incident radiation to be provided onto the film or the islands. The metal film or islands are configured such that the incident radiation is resonant with at least one plasmon mode on the metal film or metal islands.
    Type: Application
    Filed: November 20, 2008
    Publication date: March 19, 2009
    Inventors: Hong Koo Kim, Zhijun Sun, Yun Suk Jung
  • Patent number: 7492530
    Abstract: A nano-optic device comprises a plurality of subwavelength apertures in a metal film or between metal islands. The device is adapted to shape a radiation beam transmitted there through. For example, beam shaping includes at least one of beam focusing, beam bending and beam collimating.
    Type: Grant
    Filed: June 11, 2007
    Date of Patent: February 17, 2009
    Assignee: University of Pittsburgh-Of The Commonwealth System Of Higher Education
    Inventors: Hong Koo Kim, Zhijun Sun, Christopher C. Capelli
  • Patent number: 7456383
    Abstract: A nanostructured optical device includes a metal film or a plurality of metal islands having an array of a plurality of openings having a width that is less than at least one first predetermined wavelength of incident radiation to be provided onto the film or the islands. The metal film or islands are configured such that the incident radiation is resonant with at least one plasmon mode on the metal film or metal islands.
    Type: Grant
    Filed: July 22, 2004
    Date of Patent: November 25, 2008
    Assignee: University of Pittsburgh
    Inventors: Hong Koo Kim, Zhijun Sun, Yun Suk Jung
  • Patent number: 7426040
    Abstract: A Fabry-Perot cavity filter includes a first mirror and a second mirror. A gap between the first and the second mirror monotonically varies as a function of width of the filter. This filter may be used with photodetector and a channel selection filter in an optical device, such as a spectrum analyzer. The channel selection filter may be a metal nanooptic filter array which includes plurality of subwavelength apertures in a metal film or between metal islands.
    Type: Grant
    Filed: August 19, 2005
    Date of Patent: September 16, 2008
    Assignee: University of Pittsburgh
    Inventors: Hong Koo Kim, Zhijun Sun, Yun Suk Jung
  • Patent number: 7420156
    Abstract: A metal nanowire array acts as a band pass filter in the visible to IR range. The filter may be used in a monochromator, spectrometer, color camera, analyte detector or other devices.
    Type: Grant
    Filed: February 2, 2006
    Date of Patent: September 2, 2008
    Assignee: University of Pittsburgh
    Inventors: Hong Koo Kim, Zhijun Sun, Yun Suk Jung
  • Publication number: 20080135739
    Abstract: A metal nanowire array acts as a band pass filter in the visible to IR range. The filter may be used in a monochromator, spectrometer, color camera, analyte detector or other devices.
    Type: Application
    Filed: February 2, 2006
    Publication date: June 12, 2008
    Inventors: Hong Koo Kim, Zhijun Sun, Yun Suk Jung
  • Patent number: 7315426
    Abstract: A nano-optic device comprises a plurality of subwavelength apertures in a metal film or between metal islands. The device is adapted to shape a radiation beam transmitted there through. For example, beam shaping includes at least one of beam focusing, beam bending and beam collimating.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: January 1, 2008
    Assignee: University of Pittsburgh
    Inventors: Hong Koo Kim, Zhijun Sun, Christopher C. Capelli
  • Patent number: 7227210
    Abstract: A method for fabricating a non-volatile memory device. The method includes providing a substrate, e.g., silicon. The method also includes forming an oxide layer overlying the substrate; and forming a buffer layer overlying the oxide layer. A ferroelectric material is formed overlying the substrate and is formed preferably overlying the buffer layer. The method also includes forming a gate layer overlying the ferroelectric material, where the gate layer is overlying a channel region. The method further includes forming first source/drain region adjacent to a first side of the channel region and a second source/drain region adjacent to a second side of the channel region. In other embodiments, the method can also include other steps.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: June 5, 2007
    Assignee: Hynix Semiconductor, Inc.
    Inventor: Hong Koo Kim