Patents by Inventor Hongli Yang

Hongli Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11081539
    Abstract: A display substrate and a display device are disclosed. The display substrate (10) includes a plurality of repeating units (100), a plurality of primary signal lines (21) and an auxiliary signal line (22). Each of the repeating units (100) includes a first sub-pixel (R1), a second sub-pixel (B1) and two third sub-pixels (G1, G2). The two third sub-pixels (G1, G2) are located between two adjacent primary signal lines (21). In each of the repeating units (100), the first sub-pixel (R1) and the second sub-pixel (B1) are arranged in a first direction (X), and the two third sub-pixels (G1, G2) are arranged in a second direction (Y). The first direction (X) and the second direction (Y) are different directions. At least one auxiliary signal line (22) is disposed between the two adjacent primary signal lines (21). Two ends of the auxiliary signal line (22) are respectively connected to the two adjacent primary signal lines (21).
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: August 3, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Libin Liu, Qian Yang, Hongli Wang, Lujiang Huangfu
  • Patent number: 8933544
    Abstract: An integrated circuit system includes a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide. A frontside of the first device wafer is bonded to a frontside of the second device wafer at a bonding interface. A conductive path couples the first conductor to the second conductor through the bonding interface. A first metal EMI shield is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: January 13, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Hsin-Chih Tai, Yin Qian, Tiejun Dai, Howard E. Rhodes, Hongli Yang
  • Publication number: 20140014813
    Abstract: An integrated circuit system includes a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide. A frontside of the first device wafer is bonded to a frontside of the second device wafer at a bonding interface. A conductive path couples the first conductor to the second conductor through the bonding interface. A first metal EMI shield is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface.
    Type: Application
    Filed: July 12, 2012
    Publication date: January 16, 2014
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Duli Mao, Hsin-Chih Tai, Yin Qian, Tiejun Dai, Howard E. Rhodes, Hongli Yang
  • Publication number: 20130264688
    Abstract: An integrated circuit system includes a first device wafer that has a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer that has a second semiconductor layer proximate to a second metal layer including a second conductor disposed within a second metal layer oxide is also included. A frontside of the first metal layer oxide is bonded to a frontside of the second metal layer oxide at an oxide bonding interface between the first metal layer oxide and the second metal layer oxide. A conductive path couples the first conductor to the second conductor with conductive material formed in a cavity etched between the first conductor and the second conductor and etched through the oxide bonding interface and through the second semiconductor layer from a backside of the second device wafer.
    Type: Application
    Filed: April 6, 2012
    Publication date: October 10, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Yin Qian, Hsin-Chih Tai, Duli Mao, Tiejun Dai, Howard E. Rhodes, Hongli Yang
  • Patent number: 8022994
    Abstract: An image sensor has an array of photo-sensitive pixels and supports a line-by-line read out of rows. In a normal resolution each row has the same nominal gain and exposure time. In a down-sampling mode the exposure times of the rows are varied according to an alternating sequence having at least two different exposure times. During down-sampling, raw pixel data from rows with different exposure times is combined to simultaneously achieve down-sampling and a high dynamic range.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: September 20, 2011
    Assignee: OmniVision Technologies, Inc.
    Inventors: Xiaodong Luo, Hongli Yang
  • Publication number: 20100209359
    Abstract: The present invention provides a chewing gum composition comprising a chewing gum base, a biologically active ingredient, a polymeric material and one or more sweetening and flavouring agents, wherein the polymeric material is amphiphilic, has a straight or branched chain carbon-carbon backbone and a multiplicity of side chains attached to the backbone. A method of making the chewing gum composition is also provided.
    Type: Application
    Filed: February 26, 2008
    Publication date: August 19, 2010
    Applicant: REVOLYMER LIMITED
    Inventors: Beth M Foster, Hongli Yang, Terence Cosgrove, Erol A. Hasan
  • Patent number: 7667169
    Abstract: Embodiments of the present invention are directed to a plurality of light sensor cells disposed in a substrate in a shared pixel arrangement. Common readout circuitry is used to simultaneously read out image information from a group of light sensor cells. The image information from the group of light sensor cells is added together simultaneously and coupled to auto-focus circuitry and/or preview circuitry to provide for better lens adjustments and preview display.
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: February 23, 2010
    Assignee: OmniVision Technologies, Inc.
    Inventors: Hongli Yang, Hongjun Li, Xinping He
  • Publication number: 20090289169
    Abstract: Embodiments of the present invention are directed to a plurality of light sensor cells disposed in a substrate in a shared pixel arrangement. Common readout circuitry is used to simultaneously read out image information from a group of light sensor cells. The image information from the group of light sensor cells is added together simultaneously and coupled to auto-focus circuitry and/or preview circuitry to provide for better lens adjustments and preview display.
    Type: Application
    Filed: May 22, 2008
    Publication date: November 26, 2009
    Applicant: OmniVision Technologies, Inc.
    Inventors: Hongli Yang, Hongjun Li, Xinping He
  • Publication number: 20090201400
    Abstract: A backside illuminated imaging sensor pixel includes a photodiode region, a pixel circuitry region, and a storage capacitor. The photodiode region is disposed within a semiconductor die for accumulating an image charge. The pixel circuitry region is disposed on the semiconductor die between a frontside of the semiconductor die and the photodiode region. The pixel circuitry region overlaps at least a portion of the photodiode region. The storage capacitor is included within the pixel circuitry region overlapping the photodiode region and is selectively coupled to the photodiode region to temporarily store image charges accumulated thereon.
    Type: Application
    Filed: February 8, 2008
    Publication date: August 13, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Guangbin Zhang, Tiejun Dai, Hongli Yang
  • Publication number: 20090137688
    Abstract: The present invention relates to a pharmaceutical product comprising porous silicon, a beneficial substance, and an excipient, the beneficial substance being located in at least some of the pores of the porous silicon, and the excipient having a structure and composition such that it has a melting point between 25 C and 45 C. The invention allows improved control over the release of a beneficial substance from porous silicon.
    Type: Application
    Filed: December 6, 2006
    Publication date: May 28, 2009
    Inventor: Hongli Yang
  • Publication number: 20090086074
    Abstract: A camera solution includes an image sensor and an image processing and control system. At least two different operating modes are supported, with one of the modes having a higher dynamic range. Control of the dynamic range is provided at the system level. The system supports statically or dynamically selecting an operating mode that determines the dynamic range of a camera. In one implementation, the system supports the use of either a conventional image sensor that does not natively support a high dynamic range or a dual-mode image sensor.
    Type: Application
    Filed: September 27, 2007
    Publication date: April 2, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Hongjun LI, James Xinping HE, Henry Hongli YANG
  • Publication number: 20090059048
    Abstract: An image sensor has an array of photo-sensitive pixels and supports a line-by-line read out of rows. In a normal resolution each row has the same nominal gain and exposure time. In a down-sampling mode the exposure times of the rows are varied according to an alternating sequence having at least two different exposure times. During down-sampling, raw pixel data from rows with different exposure times is combined to simultaneously achieve down-sampling and a high dynamic range.
    Type: Application
    Filed: August 31, 2007
    Publication date: March 5, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Xiaodong LUO, Hongli YANG
  • Publication number: 20070018264
    Abstract: An image sensor that has a pixel array using an isolation structure between pixels that reduce electrical cross-talk is disclosed. The pixel array is formed on a substrate that has a thin (less than 5 microns) epitaxial layer. The isolation structure uses a deep p-well to surround a shallow trench isolation. The deep p-well is formed using an implant energy of typically over 700 keV.
    Type: Application
    Filed: August 24, 2005
    Publication date: January 25, 2007
    Applicant: OmniVision Technologies, Inc.
    Inventors: Howard Rhodes, Hidetoshi Nozaki, Sohei Manabe, Hsin-chih Tai, Satyadev Nagaraja, Ashish Shah, William Qian, Hongli Yang, Tiejun Dai
  • Publication number: 20060208163
    Abstract: A CMOS image sensor that has reduced transistor count is disclosed. The individual pixels are formed by a photodiode and a transfer transistor. An output node receives the signal from the photodiode via the transfer transistor. The output node is shared between multiple pixels. Further, a reset transistor is coupled between a selectable low voltage rail Vss or a high voltage reference Vref and the output node. The gate of an output transistor is then coupled to the output node. Both the reset transistor and output transistors are shared between multiple pixels. Further, the pixels have a mirror symmetry about the output transistor or output node.
    Type: Application
    Filed: April 14, 2006
    Publication date: September 21, 2006
    Applicant: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Xinping He, Hongli Yang
  • Patent number: 7105878
    Abstract: The active pixel includes a photodiode, a reset transistor, and a pixel output transistor. The photodiode is substantially covered with a protective structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. The protective structure has a photodiode contact formed therein to electrically connect the photodiode to the pixel output transistor.
    Type: Grant
    Filed: September 20, 2004
    Date of Patent: September 12, 2006
    Assignee: OmniVision Technologies, Inc.
    Inventors: Xinping He, Chih-Huei Wu, Hongli Yang
  • Publication number: 20060181635
    Abstract: Mechanical shutter devices for image sensors and associated methods are disclosed. In one aspect of the invention, an imaging system includes an image sensor having an array of pixels with photosensitive elements. The imaging system can further include a signal processing device coupled to the image sensor to receive signals from the image sensor. The system can still further include a shutter device having an open and a closed position. The shutter device can be located proximate to the photosensitive elements of the pixels so that when the shutter device is in the open position, light is allowed to reach the photosensitive elements of the pixels, and when the shutter device is in the closed position, all substantial amounts of light are prevented from reaching the photosensitive elements of the pixels. The image sensor can be configured to store the signals until the signal processing device can receive the signals.
    Type: Application
    Filed: February 17, 2005
    Publication date: August 17, 2006
    Applicant: OmniVision Technologies, Inc.
    Inventors: Xinping He, Hongli Yang
  • Patent number: 7087883
    Abstract: A CMOS image sensor that has reduced transistor count is disclosed. The individual pixels are formed by a pinned photodiode and a transfer transistor. An output node receives the signal from the photodiode via the transfer transistor. The output node is shared between multiple pixels. Further, a reset transistor is coupled between a selectable low voltage rail Vss or a high voltage reference Vref and the output node. The gate of an output transistor is then coupled to the output node. Both the reset transistor and output transistors are shared between multiple pixels.
    Type: Grant
    Filed: February 4, 2004
    Date of Patent: August 8, 2006
    Assignee: OmniVision Technologies, Inc.
    Inventors: Xinping He, Hongli Yang
  • Patent number: 6982403
    Abstract: A method of reading out a pixel signal from a pixel is disclosed. The method comprises first capturing a first black reference signal from the pixel prior to the pixel starting an integration period. Next, after completion of the integration period, a pixel signal is captured. Next, a second black reference signal is captured following completion of the integration period. Finally, the first black reference signal, second black reference signal, and pixel signal is output.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: January 3, 2006
    Assignee: OmniVision Technologies, Inc.
    Inventors: Hongli Yang, Xinping He, Qingwei Shan
  • Patent number: 6953923
    Abstract: The image sensor includes a first group and a second group of column readout circuits for reading out pixel signals from said pixels. The total number of column readout circuits in each group is substantially less than the number of columns in the image sensor pixel array. Further included is a multiplexer bus system having selection switches for selectively switching pixel signals from a block of pixels in a column as input into the first group of column readout circuits. The multiplexer bus system also selectively switches pixel signals from another block of pixels in a column as input into a second group of column readout circuits. However, when the first group of column readout circuits is reading and storing said pixel signals, the second group of column readout circuits is transferring out the processed signals. Thus, the first and second groups work alternately.
    Type: Grant
    Filed: February 18, 2003
    Date of Patent: October 11, 2005
    Assignee: OmniVision Technologies, Inc.
    Inventors: Hongli Yang, Xinping He
  • Patent number: 6937270
    Abstract: A CMOS camera image sensor that may be combined with additional CMOS camera image sensors to form a multiple-camera security monitoring system. Each CMOS image sensor includes phase-locked loop circuitry. The phase-locked loop circuitry receives a reference input signal and in response thereto synchronizes the video output of the CMOS image sensor to the reference input signal. In one configuration, one of the CMOS image sensors provides the reference signal, while in another configuration, the reference input signal may come from an external circuit. Each CMOS image sensor also includes state selection circuitry. The state selection circuitry allows the video output from the CMOS image sensor to be displayed on ¼, ½, or all of a display. Thus, the video signals from multiple CMOS image sensors may be displayed on a video monitor simultaneously.
    Type: Grant
    Filed: May 3, 1999
    Date of Patent: August 30, 2005
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kimble Dong, Xinping He, Hongli Yang