Patents by Inventor Hongqing Shan

Hongqing Shan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8668422
    Abstract: As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined between the workpiece column and the first and second process stations. The transfer arrangement can simultaneously move untreated and treated workpieces. Vertical motion swing arms and coaxial swing arms are described. A pair of spaced apart swing arms, the workpiece column and the processing stations can cooperatively define a pentagonal shape. Timing belt backlash elimination, a dual degree of freedom slot valve and low point chamber pumping, for removing chamber contaminants, are also described.
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: March 11, 2014
    Assignee: Mattson Technology, Inc.
    Inventors: Leszek Niewmierzycki, David Barker, Daniel J. Devine, Michael Kuhlman, Ryan Pakulski, Hongqing Shan, Martin Zucker
  • Patent number: 7658586
    Abstract: A wafer processing system and method in which a wafer, having a diameter, is movable between a loadlock and a processing chamber. A transfer chamber is arranged for selective pressure communication with the loadlock and the processing chamber. The transfer chamber having a configuration of lateral extents such that the wafer is movable through the transfer chamber between the loadlock and processing chamber along a wafer transfer path and the configuration of lateral extents causes the wafer, having the wafer diameter and moving along the wafer transfer path, to interfere with at least one of the loadlock and the processing chamber for any position along the wafer transfer path. The wafer includes a center and the wafer transfer path cab be defined by movement of the center through the transfer chamber. Swing arms are described that can independently move by different angles in opposing directions from a home position.
    Type: Grant
    Filed: April 1, 2005
    Date of Patent: February 9, 2010
    Assignee: Mattson Technology, Inc
    Inventors: Leszek Niewmierzycki, David Barker, Michael Kuhlman, Ryan Pakulski, Hongqing Shan, Martin Zucker
  • Patent number: 7563068
    Abstract: As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined between the workpiece column and the first and second process stations. The transfer arrangement can simultaneously move untreated and treated workpieces. Vertical motion swing arms and coaxial swing arms are described. A pair of spaced apart swing arms, the workpiece column and the processing stations can cooperatively define a pentagonal shape. Timing belt backlash elimination, a dual degree of freedom slot valve and low point chamber pumping, for removing chamber contaminants, are also described.
    Type: Grant
    Filed: January 11, 2007
    Date of Patent: July 21, 2009
    Assignee: Mattson Technology, Inc.
    Inventors: Leszek Niewmierzycki, David Barker, Daniel J. Devine, Michael Kuhlman, Ryan Pakulski, Hongqing Shan, Martin Zucker
  • Patent number: 7316761
    Abstract: Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.
    Type: Grant
    Filed: February 3, 2003
    Date of Patent: January 8, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Kenny L. Doan, Yunsang Kim, Mahmoud Dahimene, Jingbao Liu, Bryan Pu, Hongqing Shan, Don Curry
  • Publication number: 20070175864
    Abstract: As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined between the workpiece column and the first and second process stations. The transfer arrangement can simultaneously move untreated and treated workpieces. Vertical motion swing arms and coaxial swing arms are described. A pair of spaced apart swing arms, the workpiece column and the processing stations can cooperatively define a pentagonal shape. Timing belt backlash elimination, a dual degree of freedom slot valve and low point chamber pumping, for removing chamber contaminants, are also described.
    Type: Application
    Filed: January 11, 2007
    Publication date: August 2, 2007
    Inventors: Leszek Niewmierzycki, David Barker, Daniel Devine, Michael Kuhlman, Ryan Pakulski, Hongqing Shan, Martin Zucker
  • Publication number: 20070091535
    Abstract: A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
    Type: Application
    Filed: November 17, 2006
    Publication date: April 26, 2007
    Inventors: Hamid Noorbakhsh, Siamak Salimian, Paul Luscher, James Carducci, Evans Lee, Kaushik Vaidya, Hongqing Shan, Michael Welch
  • Publication number: 20060045664
    Abstract: As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined between the workpiece column and the first and second process stations. The transfer arrangement can simultaneously move untreated and treated workpieces. Vertical motion swing arms and coaxial swing arms are described. A pair of spaced apart swing arms, the workpiece column and the processing stations can cooperatively define a pentagonal shape. Timing belt backlash elimination, a dual degree of freedom slot valve and low point chamber pumping, for removing chamber contaminants, are also described.
    Type: Application
    Filed: August 17, 2004
    Publication date: March 2, 2006
    Inventors: Leszek Niewmierzycki, David Barker, Daniel Devine, Michael Kuhlman, Ryan Pakulski, Hongqing Shan, Martin Zucker
  • Publication number: 20060039781
    Abstract: A wafer processing system and method in which a wafer, having a diameter, is movable between a loadlock and a processing chamber. A transfer chamber is arranged for selective pressure communication with the loadlock and the processing chamber. The transfer chamber having a configuration of lateral extents such that the wafer is movable through the transfer chamber between the loadlock and processing chamber along a wafer transfer path and the configuration of lateral extents causes the wafer, having the wafer diameter and moving along the wafer transfer path, to interfere with at least one of the loadlock and the processing chamber for any position along the wafer transfer path. The wafer includes a center and the wafer transfer path cab be defined by movement of the center through the transfer chamber. Swing arms are described that can independently move by different angles in opposing directions from a home position.
    Type: Application
    Filed: April 1, 2005
    Publication date: February 23, 2006
    Inventors: Leszek Niewmierzycki, David Barker, Michael Kuhlman, Ryan Pakulski, Hongqing Shan, Martin Zucker
  • Patent number: 6913652
    Abstract: A system for processing substrates includes a first process chamber configured to perform a given process on a first substrate. A second process chamber is configured to perform the same process as the first chamber on a second substrate. A gas source system is configured to output a process gas. A gas flow system includes a flow channel coupled to the gas source system and the first and second process chambers to provide the process gas into the first and second process chambers. The gas source system further includes a gas flow controller to regulate flow rates of the process gas provided into the first and second chambers in order to provide the first and second substrates with substantially uniform process results.
    Type: Grant
    Filed: June 17, 2002
    Date of Patent: July 5, 2005
    Assignee: Applied Materials, Inc.
    Inventor: Hongqing Shan
  • Patent number: 6905624
    Abstract: A method of etching a substrate includes placing a substrate in a process zone. The substrate has a material with a thickness, and the material has exposed regions between features of a patterned mask. An etchant gas is introduced into the process zone. The etchant gas is energized to etch the material. An endpoint of etching the material of the substrate is determined by (i) reflecting a light beam from the substrate, the light beam having a wavelength selected to have a coherence length in the substrate of from about 1.5 to about 4 times the thickness of the material, and (ii) detecting the reflected light beam to determine an endpoint of the substrate etching process. Additionally, the wavelength of the light beam can be selected to maximize an absorption differential that is a difference between the absorption of the light beam in the patterned mask and the absorption of the light beam in the material.
    Type: Grant
    Filed: July 7, 2003
    Date of Patent: June 14, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Coriolan I. Frum, Zhifeng Sui, Hongqing Shan
  • Patent number: 6863835
    Abstract: A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field.
    Type: Grant
    Filed: April 25, 2000
    Date of Patent: March 8, 2005
    Inventors: James D. Carducci, Hamid Noorbakhsh, Evans Y. Lee, Hongqing Shan, Siamak Salimian, Paul E. Luscher, Michael D. Welch
  • Publication number: 20050023694
    Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
    Type: Application
    Filed: August 24, 2004
    Publication date: February 3, 2005
    Inventors: Claes Bjorkman, Melissa Yu, Hongqing Shan, David Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Chapra, Gerald Yin, Farhad Moghadam, Judy Huang, Dennis Yost, Betty Tang, Yunsang Kim
  • Patent number: 6849193
    Abstract: An oxide etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention uses a heavy perfluorocarbon, for example, hexafluorobutadiene (C4F6) or hexafluorobenzene (C6F6). The fluorocarbon together with a substantial amount of a noble gas such as argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. A more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner. Oxygen or nitrogen may be added to counteract the polymerization. The same chemistry can be used in a magnetically enhanced reactive ion etcher (MERIE) or with a remote plasma source.
    Type: Grant
    Filed: May 13, 2002
    Date of Patent: February 1, 2005
    Inventors: Hoiman Hung, Joseph P Caulfield, Hongqing Shan, Ruiping Wang, Gerald Zheyao Yin
  • Publication number: 20050006341
    Abstract: A method of etching a substrate includes placing a substrate in a process zone. The substrate has a material with a thickness, and the material has exposed regions between features of a patterned mask. An etchant gas is introduced into the process zone. The etchant gas is energized to etch the material. An endpoint of etching the material of the substrate is determined by (i) reflecting a light beam from the substrate, the light beam having a wavelength selected to have a coherence length in the substrate of from about 1.5 to about 4 times the thickness of the material, and (ii) detecting the reflected light beam to determine an endpoint of the substrate etching process. Additionally, the wavelength of the light beam can be selected to maximize an absorption differential that is a difference between the absorption of the light beam in the patterned mask and the absorption of the light beam in the material.
    Type: Application
    Filed: July 7, 2003
    Publication date: January 13, 2005
    Inventors: Coriolan Frum, Zhifeng Sui, Hongqing Shan
  • Publication number: 20050003675
    Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
    Type: Application
    Filed: June 7, 2004
    Publication date: January 6, 2005
    Inventors: James Carducci, Hamid Noorbakhsh, Evans Lee, Bryan Pu, Hongqing Shan, Claes Bjorkman, Siamak Salimian, Paul Luscher, Michael Welch
  • Patent number: 6831742
    Abstract: A substrate processing apparatus 27 comprises a chamber 35 capable of processing a substrate 20, a radiation source 58 to provide a radiation, a radiation polarizer 59 adapted to polarize the radiation to one or more polarization angles that are selected in relation to an orientation 33 of a feature 25 being processed on the substrate 20, a radiation detector 54 to detect radiation reflected from the substrate 20 during processing and generate a signal, and a controller 100 to process the signal.
    Type: Grant
    Filed: October 23, 2000
    Date of Patent: December 14, 2004
    Assignee: Applied Materials, Inc
    Inventors: Zhifeng Sui, Hongqing Shan, Nils Johansson, Hamid Noorbakhsh, Yu Guan
  • Patent number: 6829056
    Abstract: A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.
    Type: Grant
    Filed: August 21, 2003
    Date of Patent: December 7, 2004
    Inventors: Michael Barnes, John Holland, Hongqing Shan, Bryan Y. Pu, Mohit Jain, Zhifeng Sui, Michael D. Armacost, Neil E. Hanson, Diana Xiaobing Ma, Ashok K. Sinha, Dan Maydan
  • Patent number: 6797189
    Abstract: A plasma etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. A primary fluorine-containing gas, preferably hexafluorobutadiene (C4F6), is combined with a significantly larger amount of the diluent gas xenon (Xe) enhance nitride selectivity without the occurrence of etch stop. The chemistry is also useful for etching oxides in which holes and corners have already been formed, for which the use of xenon also reduces faceting of the oxide. For this use, the relative amount of xenon need not be so high. The invention may be used with related heavy fluorocarbons and other fluorine-based etching gases.
    Type: Grant
    Filed: March 25, 1999
    Date of Patent: September 28, 2004
    Inventors: Hoiman (Raymond) Hung, Joseph P. Caulfield, Hongqing Shan, Michael Rice, Kenneth S Collins, Chunshi Cui
  • Patent number: 6773544
    Abstract: The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.
    Type: Grant
    Filed: January 31, 2001
    Date of Patent: August 10, 2004
    Inventors: James D. Carducci, Hamid Noorbakhsh, Evans Y. Lee, Hongqing Shan, Siamak Salimian, Paul E. Luscher, Michael D. Welch
  • Publication number: 20040149394
    Abstract: Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.
    Type: Application
    Filed: February 3, 2003
    Publication date: August 5, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Kenny L. Doan, Yunsang Kim, Mahmoud Dahimene, Jingbao Liu, Bryan Y. Pu, Hongqing Shan