Patents by Inventor Hongxing Jiang

Hongxing Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11747658
    Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.
    Type: Grant
    Filed: August 26, 2022
    Date of Patent: September 5, 2023
    Assignee: Texas Tech University System
    Inventors: Hongxing Jiang, Changzhi Li, Jing Li, Jingyu Lin
  • Publication number: 20230223741
    Abstract: Core-cladding planar waveguide (PWG) structures and methods of making and using same. The core-cladding PWG structures can be synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er doping concentration of [Er] between 1×1018 atoms/cm3 and 1×1022 atoms/cm3 can be in the core layer. Such PWGs have a core region that can achieve optical confinement between 96% and 99% and above.
    Type: Application
    Filed: March 12, 2020
    Publication date: July 13, 2023
    Applicant: TEXAS TECH UNIVERSITY SYSTEM
    Inventors: Hongxing Jiang, Zhenyu Sun, Yaqiong Yan, Jing Li, Jingyu Lin
  • Publication number: 20220404647
    Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.
    Type: Application
    Filed: August 26, 2022
    Publication date: December 22, 2022
    Applicant: Texas Tech University System
    Inventors: Hongxing Jiang, Changzhi Li, Jing Li, Jingyu Lin
  • Patent number: 11460723
    Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: October 4, 2022
    Assignee: TEXAS TECH UNIVERSITY SYSTEM
    Inventors: Hongxing Jiang, Changzhi Li, Jing Li, Jingyu Lin
  • Patent number: 11195968
    Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: December 7, 2021
    Assignee: Texas Tech University System
    Inventors: Hongxing Jiang, Jingyu Lin, Jing Li, Avisek Maity, Sam Grenadier
  • Publication number: 20210111299
    Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.
    Type: Application
    Filed: June 10, 2020
    Publication date: April 15, 2021
    Inventors: Hongxing Jiang, Jingyu Lin, Jing Li, Avisek Maity, Sam Grenadier
  • Patent number: 10714651
    Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: July 14, 2020
    Assignee: Texas Tech University System
    Inventors: Hongxing Jiang, Jingyu Lin, Jing Li, Avisek Maity, Sam Grenadier
  • Publication number: 20200135958
    Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.
    Type: Application
    Filed: October 25, 2018
    Publication date: April 30, 2020
    Inventors: Hongxing Jiang, Jingyu Lin, Jing Li, Avisek Maity, Sam Grenadier
  • Patent number: 9474629
    Abstract: A device and method for spreading apart adjacent vertebrae bodies for the safe insertion of an IBD into an IVD space said device designed for minimally invasive procedures and posterior or anterior approaches.
    Type: Grant
    Filed: August 19, 2010
    Date of Patent: October 25, 2016
    Assignee: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventor: Hongxing Jiang
  • Publication number: 20150289993
    Abstract: A device and method for spreading apart adjacent vertebrae bodies for the safe insertion of an IBD into an IVD space said device designed for minimally invasive procedures and posterior or anterior approaches.
    Type: Application
    Filed: June 5, 2015
    Publication date: October 15, 2015
    Inventor: Hongxing Jiang
  • Patent number: 9093581
    Abstract: The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: July 28, 2015
    Assignee: Texas Tech University System
    Inventors: Hongxing Jiang, Sashikanth Majety, Rajendra Dahal, Jing Li, Jingyu Lin
  • Patent number: 9047818
    Abstract: An active matrix microdisplay system is provided. The microdisplay system includes an array of micro-emitters. The microdisplay system also includes an array of CMOS driving circuits. Each of the CMOS driving circuits is coupled to a respective micro-emitter for controlling current to each respective micro-emitter. Each driving circuit includes metal-oxide-semiconductor field-effect transistor (MOSFET) devices, where the MOSFET devices comprise p-type metal-oxide-semiconductors (PMOSs) or n-type metal-oxide-semiconductors (NMOSs).
    Type: Grant
    Filed: March 12, 2011
    Date of Patent: June 2, 2015
    Assignee: III-N Technology, Inc.
    Inventors: Jacob Day, Jing Li, Donald Lie, Zhaoyang Fan, Jingyu Lin, Hongxing Jiang
  • Publication number: 20130292687
    Abstract: The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
    Type: Application
    Filed: May 29, 2012
    Publication date: November 7, 2013
    Applicant: TEXAS TECH UNIVERSITY SYSTEM
    Inventors: Hongxing Jiang, Sashikanth Majety, Rajendra Dahal, Jing Li, Jingyu Lin
  • Publication number: 20130292685
    Abstract: The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III-nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
    Type: Application
    Filed: May 5, 2012
    Publication date: November 7, 2013
    Applicant: TEXAS TECH UNIVERSITY SYSTEM
    Inventors: Hongxing Jiang, Sashikanth Majety, Rajendra Dahal, Jing Li, Jingyu Lin
  • Patent number: 8272757
    Abstract: A solid-state LED lighting lamp (SSL-LED lamp), based on AC or DC-emitters, which runs under a high AC or DC voltage, with high light generation capability, high reliability and long lifespan, is disclosed. A plurality of AC or DC-emitter chips are integrated on a thermally conductive submount and the electrically conductive element pathways on the submount provide electrical interconnections between the mounted chips and also between the individual LEDs on each chip. The conducting elements also provide redundant current paths at the AC or DC-emitter chip level and individual LED level. Depending on the detail design, the LED SSL-lamp may be directly powered by an AC voltage (i.e. 110/120V or 220/240V power grid) or a high DC voltage. With this design, the LED SSL-lamp can provide sufficient illumination to replace the incandescent or florescent light bulbs for general lighting purpose. The distributed emitter array design ensures the heat dissipation.
    Type: Grant
    Filed: June 3, 2005
    Date of Patent: September 25, 2012
    Assignee: AC LED Lighting, L.L.C.
    Inventors: Zhaoyang Fan, Hongxing Jiang, Jingyu Lin
  • Patent number: 8227328
    Abstract: This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 ?m. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.
    Type: Grant
    Filed: August 24, 2007
    Date of Patent: July 24, 2012
    Inventors: Hongxing Jiang, Jingyu Lin, Cris Ugolini, John Zavada
  • Patent number: 8058663
    Abstract: Disclosed is a semiconductor micro-emitter array for use in a full-color microdisplay. Each pixel includes three vertically-stacked red, green, and blue micro-emitters which minimizes pixel size. The microdisplay may be exclusively based on Group III-nitride semiconductors, with differing indium concentrations in three respective InGaN/GaN active regions for emitting the three RGB colors. Alternatively the microdisplay may be based on hybrid integration of InGaN based III-nitride semiconductors for blue and green emissions, and AlGaInP based (e.g., Group III-V) semiconductors for red emissions.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: November 15, 2011
    Assignee: III-N Technology, Inc.
    Inventors: Zhaoyang Fan, Jing Li, Jingyu Lin, Hongxing Jiang
  • Publication number: 20110071634
    Abstract: A device and method for spreading apart adjacent vertebrae bodies for the safe insertion of an IBD into an IVD space said device designed for minimally invasive procedures and posterior or anterior approaches.
    Type: Application
    Filed: August 19, 2010
    Publication date: March 24, 2011
    Applicant: The Governors of the University of Alberta
    Inventor: Hongxing Jiang
  • Publication number: 20100320443
    Abstract: This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 ?m. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.
    Type: Application
    Filed: August 24, 2007
    Publication date: December 23, 2010
    Inventors: Hongxing Jiang, Jingyu Lin, Cris Ugolini, John Zavada
  • Patent number: 7714348
    Abstract: A highly reliable, high voltage AC/DC LED device with integrated protection mechanism is disclosed. The protection element can be a current-limiting resistor, monolithically integrated on LED chip, or a discrete resistor assembled in the lamp package or submount. The protection elements may also include other parts integrated on a submount.
    Type: Grant
    Filed: March 7, 2007
    Date of Patent: May 11, 2010
    Assignee: AC-LED Lighting, L.L.C.
    Inventors: Zhaoyang Fan, Jing Li, Jingyu Lin, Hongxing Jiang