Patents by Inventor Hongxing Jiang
Hongxing Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11747658Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.Type: GrantFiled: August 26, 2022Date of Patent: September 5, 2023Assignee: Texas Tech University SystemInventors: Hongxing Jiang, Changzhi Li, Jing Li, Jingyu Lin
-
Publication number: 20230223741Abstract: Core-cladding planar waveguide (PWG) structures and methods of making and using same. The core-cladding PWG structures can be synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er doping concentration of [Er] between 1×1018 atoms/cm3 and 1×1022 atoms/cm3 can be in the core layer. Such PWGs have a core region that can achieve optical confinement between 96% and 99% and above.Type: ApplicationFiled: March 12, 2020Publication date: July 13, 2023Applicant: TEXAS TECH UNIVERSITY SYSTEMInventors: Hongxing Jiang, Zhenyu Sun, Yaqiong Yan, Jing Li, Jingyu Lin
-
Publication number: 20220404647Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.Type: ApplicationFiled: August 26, 2022Publication date: December 22, 2022Applicant: Texas Tech University SystemInventors: Hongxing Jiang, Changzhi Li, Jing Li, Jingyu Lin
-
Patent number: 11460723Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.Type: GrantFiled: December 4, 2019Date of Patent: October 4, 2022Assignee: TEXAS TECH UNIVERSITY SYSTEMInventors: Hongxing Jiang, Changzhi Li, Jing Li, Jingyu Lin
-
Patent number: 11195968Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.Type: GrantFiled: June 10, 2020Date of Patent: December 7, 2021Assignee: Texas Tech University SystemInventors: Hongxing Jiang, Jingyu Lin, Jing Li, Avisek Maity, Sam Grenadier
-
Publication number: 20210111299Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.Type: ApplicationFiled: June 10, 2020Publication date: April 15, 2021Inventors: Hongxing Jiang, Jingyu Lin, Jing Li, Avisek Maity, Sam Grenadier
-
Patent number: 10714651Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.Type: GrantFiled: October 25, 2018Date of Patent: July 14, 2020Assignee: Texas Tech University SystemInventors: Hongxing Jiang, Jingyu Lin, Jing Li, Avisek Maity, Sam Grenadier
-
Publication number: 20200135958Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.Type: ApplicationFiled: October 25, 2018Publication date: April 30, 2020Inventors: Hongxing Jiang, Jingyu Lin, Jing Li, Avisek Maity, Sam Grenadier
-
Patent number: 9474629Abstract: A device and method for spreading apart adjacent vertebrae bodies for the safe insertion of an IBD into an IVD space said device designed for minimally invasive procedures and posterior or anterior approaches.Type: GrantFiled: August 19, 2010Date of Patent: October 25, 2016Assignee: THE GOVERNORS OF THE UNIVERSITY OF ALBERTAInventor: Hongxing Jiang
-
Publication number: 20150289993Abstract: A device and method for spreading apart adjacent vertebrae bodies for the safe insertion of an IBD into an IVD space said device designed for minimally invasive procedures and posterior or anterior approaches.Type: ApplicationFiled: June 5, 2015Publication date: October 15, 2015Inventor: Hongxing Jiang
-
Patent number: 9093581Abstract: The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.Type: GrantFiled: May 29, 2012Date of Patent: July 28, 2015Assignee: Texas Tech University SystemInventors: Hongxing Jiang, Sashikanth Majety, Rajendra Dahal, Jing Li, Jingyu Lin
-
Patent number: 9047818Abstract: An active matrix microdisplay system is provided. The microdisplay system includes an array of micro-emitters. The microdisplay system also includes an array of CMOS driving circuits. Each of the CMOS driving circuits is coupled to a respective micro-emitter for controlling current to each respective micro-emitter. Each driving circuit includes metal-oxide-semiconductor field-effect transistor (MOSFET) devices, where the MOSFET devices comprise p-type metal-oxide-semiconductors (PMOSs) or n-type metal-oxide-semiconductors (NMOSs).Type: GrantFiled: March 12, 2011Date of Patent: June 2, 2015Assignee: III-N Technology, Inc.Inventors: Jacob Day, Jing Li, Donald Lie, Zhaoyang Fan, Jingyu Lin, Hongxing Jiang
-
Publication number: 20130292687Abstract: The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.Type: ApplicationFiled: May 29, 2012Publication date: November 7, 2013Applicant: TEXAS TECH UNIVERSITY SYSTEMInventors: Hongxing Jiang, Sashikanth Majety, Rajendra Dahal, Jing Li, Jingyu Lin
-
Publication number: 20130292685Abstract: The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III-nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.Type: ApplicationFiled: May 5, 2012Publication date: November 7, 2013Applicant: TEXAS TECH UNIVERSITY SYSTEMInventors: Hongxing Jiang, Sashikanth Majety, Rajendra Dahal, Jing Li, Jingyu Lin
-
Patent number: 8272757Abstract: A solid-state LED lighting lamp (SSL-LED lamp), based on AC or DC-emitters, which runs under a high AC or DC voltage, with high light generation capability, high reliability and long lifespan, is disclosed. A plurality of AC or DC-emitter chips are integrated on a thermally conductive submount and the electrically conductive element pathways on the submount provide electrical interconnections between the mounted chips and also between the individual LEDs on each chip. The conducting elements also provide redundant current paths at the AC or DC-emitter chip level and individual LED level. Depending on the detail design, the LED SSL-lamp may be directly powered by an AC voltage (i.e. 110/120V or 220/240V power grid) or a high DC voltage. With this design, the LED SSL-lamp can provide sufficient illumination to replace the incandescent or florescent light bulbs for general lighting purpose. The distributed emitter array design ensures the heat dissipation.Type: GrantFiled: June 3, 2005Date of Patent: September 25, 2012Assignee: AC LED Lighting, L.L.C.Inventors: Zhaoyang Fan, Hongxing Jiang, Jingyu Lin
-
Patent number: 8227328Abstract: This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 ?m. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.Type: GrantFiled: August 24, 2007Date of Patent: July 24, 2012Inventors: Hongxing Jiang, Jingyu Lin, Cris Ugolini, John Zavada
-
Patent number: 8058663Abstract: Disclosed is a semiconductor micro-emitter array for use in a full-color microdisplay. Each pixel includes three vertically-stacked red, green, and blue micro-emitters which minimizes pixel size. The microdisplay may be exclusively based on Group III-nitride semiconductors, with differing indium concentrations in three respective InGaN/GaN active regions for emitting the three RGB colors. Alternatively the microdisplay may be based on hybrid integration of InGaN based III-nitride semiconductors for blue and green emissions, and AlGaInP based (e.g., Group III-V) semiconductors for red emissions.Type: GrantFiled: September 26, 2008Date of Patent: November 15, 2011Assignee: III-N Technology, Inc.Inventors: Zhaoyang Fan, Jing Li, Jingyu Lin, Hongxing Jiang
-
Publication number: 20110071634Abstract: A device and method for spreading apart adjacent vertebrae bodies for the safe insertion of an IBD into an IVD space said device designed for minimally invasive procedures and posterior or anterior approaches.Type: ApplicationFiled: August 19, 2010Publication date: March 24, 2011Applicant: The Governors of the University of AlbertaInventor: Hongxing Jiang
-
Publication number: 20100320443Abstract: This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 ?m. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.Type: ApplicationFiled: August 24, 2007Publication date: December 23, 2010Inventors: Hongxing Jiang, Jingyu Lin, Cris Ugolini, John Zavada
-
Patent number: 7714348Abstract: A highly reliable, high voltage AC/DC LED device with integrated protection mechanism is disclosed. The protection element can be a current-limiting resistor, monolithically integrated on LED chip, or a discrete resistor assembled in the lamp package or submount. The protection elements may also include other parts integrated on a submount.Type: GrantFiled: March 7, 2007Date of Patent: May 11, 2010Assignee: AC-LED Lighting, L.L.C.Inventors: Zhaoyang Fan, Jing Li, Jingyu Lin, Hongxing Jiang