Abstract: A mask structure is provided. The mask structure includes a plurality of mask units arranged in an array. The mask units includes a first mask configured to form a first transparent electrode in a corresponding area of a surface of the array substrate, and a second mask connected with the first mask, and configured to form a second transparent electrode in a corresponding area of the surface of the array substrate. The first mask and the second mask have different light transmittances, and light transmittance of the second mask is less than light transmittance of the first mask, to allow in different amounts of light.

Abstract: A TFT substrate and a manufacturing method thereof provided, including: depositing a metal thin film and a transparent conductive thin film on TFTs sequentially; coating a photoresist on the transparent conductive thin film, exposing and developing the photoresist via a half-tone mask to obtain a first photoresist layer and a second photoresist layer; etching the transparent conductive thin film and the metal thin film not covered by the first photoresist layer and the second photoresist layer; ashing the first photoresist layer and the second photoresist layer to remove the second photoresist layer; etching the transparent conductive thin film to expose the metal thin film not covered by the first photoresist layer; oxidizing the metal thin film to form a metal oxide thin film as a passivation layer; and stripping off the first photoresist layer to expose the metal thin film and the transparent conductive thin film as the pixel electrode.

Abstract: The present disclosure provides a method for manufacturing a thin-film transistor array substrate including: providing substrate, disposing a gate electrode, a gate insulation layer, and a semiconductor thin film in sequence; depositing a photoresist layer on the semiconductor thin film and pattern the photoresist layer; stripping the photoresist layer to form a source-drain electrode. The present disclosure further provides a thin-film transistor array substrate manufactured by the above method.

Abstract: An organic thin film transistor array substrate and manufacture method thereof, display device are provided. The method of manufacturing organic thin film transistor array substrate, comprising: providing substrate; depositing first metal layer, transparent electrode layer and photoresist layer on substrate by sequentially; using first half transparent photo mask for patterning treatment, and forming data line, source, drain and pixel electrode, wherein channel region is forming between source and drain; depositing semiconducting layer, insulating layer and second metal layer by sequentially; using second photo mask for patterning treatment, and forming active layer, grid insulating layer, grid on channel region, grid is connecting to scan line; depositing passivation layer; using third photo mask for patterning treatment and exposing pixel electrode; forming OLED material on pixel electrode. According to the method above could effectively reduce photo mask process and reduce cost.

Abstract: The present disclosure provides a manufacturing method for an array substrate and a liquid crystal display device. The manufacturing method for an array substrate may include: providing a substrate; forming a thin film transistor device comprising a source and a drain on the substrate; covering a passivation layer, a blocking layer, and a photoresist layer on the thin film transistor device, sequentially; processing the photoresist layer to divide the blocking layer and the passivation layer into a first region and a second region corresponding to positions of an active area, and a third region corresponding to a position of the thin film transistor device. By the above-mentioned manufacturing method, on one hand, a number of mask processes may be reduced, and the manufacturing efficiency may be improved. On the other hand, peeling efficiency of the photoresist may be improved.

Abstract: A manufacturing method of a thin film transistor array substrate is provided in the present disclosure. A third mask of the present disclosure is configured to perform a hydrophobic treatment on a surface of a photoresist to form a hydrophobic group. Presence of the hydrophobic group makes a solution type transparent metal and an OLED material not covered on the surface of the photoresist, thereby facilitating photoresist stripping, and promoting stripping efficiency and process efficiency. Existence of the photoresist makes the OLED material form a fixed pattern. One of the masks can be saved to lower product costs.

Abstract: The present disclosure provides a method for manufacturing an array substrate. An ashing treatment is performed on the first photoresist pattern to remove the photoresist layer in the photoresist-partially-retained-region and to thin the photoresist layer in the photoresist-entirely-retained-region, so that a second photoresist pattern is generated. Thereafter, the passivation layer is etched using the second photoresist pattern as a mask to thin the passivation layer in the photoresist-partially-retained-region and to reduce roughness of the rough top surface in the photoresist-partially-retained-region. Therefore, process stability is raised.

Abstract: The present disclosure provides a method for manufacturing an array substrate. An ashing treatment is performed on the first photoresist pattern to remove the photoresist layer in the photoresist-partially-retained-region and to thin the photoresist layer in the photoresist-entirely-retained-region, so that a second photoresist pattern is generated. Thereafter, the passivation layer is etched using the second photoresist pattern as a mask to thin the passivation layer in the photoresist-partially-retained-region and to reduce roughness of the rough top surface in the photoresist-partially-retained-region. Therefore, process stability is raised.

Abstract: The invention provides an OTFT and manufacturing method thereof. The OTFT comprises: a substrate; a source/drain electrode layer, formed on the substrate; an organic semiconductor layer, formed on the source/drain electrode layer; an organic insulating layer, formed on the organic semiconductor layer; a charge injection layer, formed on the organic insulating layer; a gate electrode layer, formed on the charge injection layer. The invention also provides a corresponding manufacturing method. The OTFT of the invention provides a novel structure for organic thin film transistor to improve the OTFT device stability; the OTFT prepared by the manufacturing method of OTFT of the present invention improves the OTFT device stability.

Abstract: An array substrate and a method of manufacturing the array substrate are provided. The method includes providing a substrate, sequentially forming a light-shielding layer, a buffer layer, an active layer, a source, a drain, a gate insulating layer, and a gate on the substrate, performing a first conductorization process on a corresponding region of the active layer opposite to the source and the drain, and performing a second conductorization process on another corresponding region of the active layer between the source and the gate and between the drain and the gate.

Abstract: An array substrate and a manufacturing method thereof are provided. The manufacturing method comprises: depositing a passivation material layer on a TFT layer, wherein the passivation material layer includes a first film layer and a second film layer made of different materials alternatively arranged; using a photoresist layer as a mask to etch the passivation material layer until the first film layer is exposed so as to form a patterned structure; depositing an ITO film on the photoresist layer and the exposed first film layer; and stripping the photoresist layer to form the array substrate. By using different materials with different etching speed, a greater gap between the boundary of the spacer and the boundary of the photoresist structure would be formed to facilitate the photoresist stripping process. Thereby, the stripping efficiency and the stripping uniformity can be enhanced to reduce the probability of photoresist residue.

Abstract: An array substrate and a method of manufacturing the array substrate are provided. The method includes providing a substrate, sequentially forming a light-shielding layer, a buffer layer, an active layer, a source, a drain, a gate insulating layer, and a gate on the substrate, performing a first conductorization process on a corresponding region of the active layer opposite to the source and the drain, and performing a second conductorization process on another corresponding region of the active layer between the source and the gate and between the drain and the gate.

Abstract: The invention provides an OTFT and manufacturing method thereof. The OTFT comprises: a substrate; a source/drain electrode layer, formed on the substrate; an organic semiconductor layer, formed on the source/drain electrode layer; an organic insulating layer, formed on the organic semiconductor layer; a charge injection layer, formed on the organic insulting layer; a gate electrode layer, formed on the charge injection layer. The invention also provides a corresponding manufacturing method. The OTFT of the invention provides a novel structure for organic thin film transistor to improve the OTFT device stability; the OTFT prepared by the manufacturing method of OTFT of the present invention improves the OTFT device stability.

Abstract: Disclosed are a field effect transistor and method for manufacturing the same, and a display device. The field effect transistor includes: a source and a drain which are spaced apart from each other; a semi-conductor layer arranged between the source and the drain; a first gate layer located on a side of the semi-conductor layer; and a second gate layer located on the other side of the semi-conductor layer. The field effect transistor provided by the present disclosure is less energy-consuming; a method for manufacturing the same is low costing; and a display device using the same is also less energy-consuming.

Abstract: A manufacturing method of a thin film transistor array substrate is provided in the present disclosure. A third mask of the present disclosure is configured to perform a hydrophobic treatment on a surface of a photoresist to form a hydrophobic group. Presence of the hydrophobic group makes a solution type transparent metal and an OLED material not covered on the surface of the photoresist, thereby facilitating photoresist stripping, and promoting stripping efficiency and process efficiency. Existence of the photoresist makes the OLED material form a fixed pattern. One of the masks can be saved to lower product costs.

Abstract: The present disclosure provides a pixel driving circuit and a liquid crystal display (LCD) panel. A first terminal, a second terminal, and a third terminal of the second switch are connected with a data line, a common electrode line, a second pixel electrode, respectively. The first terminal, the second terminal, and the third terminal of the second switch are turned on, and a voltage of the second pixel electrode is between a data voltage provided by the data line and a common voltage provided by the common electrode line, such that a predetermined voltage difference is formed between the first pixel electrode and the second pixel electrode.

Abstract: The present invention discloses a GOA circuit, comprising a plurality of GOA units which are cascade coupled, and the Nth stage GOA unit is employed to control charge to the Nth level scan line G(N), and the pull-down holding circuit of the Nth stage GOA unit comprises a Nth control circuit, a Nth holding circuit and a Nth shared circuit; the pull-down holding circuit of the (N+4)th stage GOA unit comprises a (N+4)th control circuit, a (N+4)th holding circuit and a Nth shared circuit; a first control end Q(N) of the Nth control circuit and a second control end receiving the first control signal regulates and controls a voltage level of the output end P(N) thereof; a first control end Q(N+4) of the (N+4)th control circuit and a second control end receiving the low frequency control signal regulates and controls a voltage level of the output end P(N+4) thereof.

Abstract: A mask structure is provided. The mask structure includes a plurality of mask units arranged in an array. The mask units includes a first mask configured to form a first transparent electrode in a corresponding area of a surface of the array substrate, and a second mask connected with the first mask, and configured to form a second transparent electrode in a corresponding area of the surface of the array substrate. The first mask and the second mask have different light transmittances, and light transmittance of the second mask is less than light transmittance of the first mask, to allow in different amounts of light.

Abstract: A thin film transistor array panel and a manufacturing method are disclosed herein. The thin film transistor array panel includes a data line, a first block of a source electrode, a third block of a drain electrode, and an electrode layer which are formed by a first metal layer disposed on a baseplate; a second block of the source electrode, a fourth block of the drain electrode are formed by a second metal layer which is disposed on the first metal layer. The first block and the second block overlap to combine integrally. The third block and the fourth block overlap to combine integrally. The present invention can decrease the electrical resistance of each of the source electrode and the drain electrode.

Abstract: Disclosed is a voltage conversion circuit, display panel, and method for driving the display panel. The voltage conversion circuit comprises: a voltage-dividing unit which receives a voltage of a data signal of a main pixel region, and divides the voltage of the data signal of the main pixel region so as to output an intermediate voltage, and a reverse unit which, under control of a first clock signal and a second clock signal, inversely converts the intermediate voltage to a voltage of the data signal of a sub pixel region, rendering polarity of a pixel voltage of the sub pixel region and polarity of a pixel voltage of the main pixel region opposite to each other.