Abstract: An integrated thin film transistor on insulator circuit made up of a number of thin film transistors formed with small feature size and densely packed so as to allow interconnection as a complex circuit. An insulating substrate, preferably flexible, serves as the support layer for the integrated circuit. Control gate metallization is carried on the insulating substrate, a dielectric layer is deposited over the control gate, and an amorphous silicon layer with doped source and drain regions deposited on the dielectric layer. Trenches are formed to remove the amorphous silicon material between transistors to allow highly dense circuit packing. An upper interconnect level which forms connections to the source and drain and gate regions of the thin film transistors, also interconnects the transistors to form more complex circuit structures. Due to the dense packing of the transistors allowed by the trench isolation, the interconnecting foils can be relatively short, increasing the speed of the circuit.

Abstract: A method and system for detecting material bound on a surface of a piezoelectric resonator introduces a signal of a constant frequency through the sensing resonator and detects a change in the insertion phase shift of the resonator as a result of the binding of the material being detected on the surface of the resonator. Environmental effects on the measurement are effectively canceled by the use of a reference resonator driven by the same input signal. A multiple-port sensing device is provided which includes thin-film sensing and reference resonators monolithically formed on a substrate.

Abstract: A thin film floating gate transistor with improved dielectric structure. The dielectric structure serves the purpose of encapsulating the floating gate and also interfacing with the semiconductor material, .alpha.-Si:H. It thus must meet a variety of requirements. In order to provide long memory retention times, the dielectric material, at least in the regions encapsulating the floating gate, must have a high resistivity, on the order of 10.sup.17 ohm-cm or better. Silicon dioxide is the preferred material for encapsulating the floating gate. However, since silicon dioxide creates a high density of defect state when interfaced with the .alpha.-Si:H layer. An interface layer, substantially free of oxide, is interposed between the high resistivity layer and the .alpha.-Si:H. Preferably, the interface portion of the dielectric layer is silicon nitride. In some cases, it is desirable to replace the entire dielectric structure, or at least the interface layer with aluminum nitride.

Abstract: A non-planar electronic light-emitting display has a display area divided into a matrix of pixels. Each pixel includes two primary elements, an electronic driver and a light-emitting diode based on a light-emitting polymer. The electronic driver is a thin film transistor device of amorphous silicon formed on the insulating substrate. The diode has a first electrode connected to and driven by the electronic transistor, a layer of light-emitting polymer deposited on the electrode, and an overlying electrode normally biased on. Energization of the driver biases the diode to cause the polymer to emit light. Each pixel is configured with the two-component structure described above, and row and column lines to the matrix of pixels are decoded by the drivers to cause selective illumination of the pixels.

Abstract: A non-planar electronic light-emitting display has a display area divided into a matrix of pixels. Each pixel includes two primary elements, an electronic driver and a light-emitting diode based on a light-emitting polymer. The electronic driver is a thin film transistor device of amorphous silicon formed on the insulating substrate. The diode has a first electrode connected to and driven by the electronic transistor, a layer of light-emitting polymer deposited on the electrode, and an overlying electrode normally biased on. Energization of the driver biases the diode to cause the polymer to emit light. Each pixel is configured with the two-component structure described above, and row and column lines to the matrix of pixels are decoded by the drivers to cause selective illumination of the pixels.

Abstract: An integrated thin film transistor on insulator circuit made up of a number of thin film transistors formed with small feature size and densely packed so as to allow interconnection as a complex circuit. An insulating substrate, preferably flexible, serves as the support layer for the integrated circuit. Control gate metallization is carried on the insulating substrate, a dielectric layer is deposited over the control gate, and an amorphous silicon layer with doped source and drain regions deposited on the dielectric layer. Trenches are formed to remove the amorphous silicon material between transistors to allow highly dense circuit packing. An upper interconnect level which forms connections to the source and drain and gate regions of the thin film transistors, also interconnects the transistors to form more complex circuit structures. Due to the dense packing of the transistors allowed by the trench isolation, the interconnecting foils can be relatively short, increasing the speed of the circuit.

Abstract: A nuclear battery for supplying low level electrical energy for a relatively long period of time. The battery includes a low-energy beta emitter and phosphor dispersed sufficient proximate the beta emitter to capture the low energy betas before decay. A photovoltaic receptor is configured to have a peaked response near the wavelength of the photons emitted by the phosphor. In a preferred embodiment, the photovoltaic, phosphor and beta source are formed into flexible layers which are rolled into a cylinder in order to maximize the capture of photons emitted by the beta-excited phosphor.

Abstract: A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Abstract: An oxygen electrode for a fuel cell utilizing an acid electrolyte has a substrate of an alkali metal tungsten bronze of the formula: A.sub.x WO.sub.3 where A is an alkali metal and x is at least 0.2, which is covered with a thin layer of platinum tungsten bronze of the formula: Pt.sub.y WO.sub.3 where y is at least 0.8.