Abstract: An integrated circuit is provided and includes a memory cell array, a plurality of gate electrodes extending in a first direction above a substrate, a plurality of word lines extending in the first direction above the substrate, a plurality of bit lines extending below the substrate in a second direction intersecting the first direction, and a plurality of first contacts passing through the substrate in a vertical direction and respectively connected to the plurality of bit lines.

Abstract: Provided is an integrated circuit including a cell array disposed on a substrate and including a plurality of bit cells, a row decoder including a plurality of word line drivers each providing a plurality of word line signals to the cell array, a backside wiring layer disposed on a back side of the substrate to overlap the row decoder and providing power to the plurality of word line drivers, and a plurality of backside contacts between the row decoder and the backside wiring layer. Each of the plurality of backside contacts extends from a source of at least one transistor included in each of the plurality of word line drivers to the backside wiring layer.

Abstract: An integrated circuit includes a read only memory (ROM) cell which includes an on-cell. The on-cell includes: a first source/drain region and a second source/drain region; a frontside contact between the first source/drain region and a bit line on a front side of the on-cell; and a backside contact between the second source/drain region and a power line on a back side of the on-cell. The bit line is configured to provide a bit line signal to the on-cell, and the power line is configured to provide a power supply voltage signal to the on-cell. The bit line and the power line are vertically aligned with each other.

Abstract: An integrated circuit includes a substrate; a bit cell array including bit cells on the substrate; a frontside wiring layer above the substrate in a vertical direction with respect to a front side of the substrate, the frontside wiring layer including local word lines connected to the bit cells; a row decoder configured to provide word line signals for driving the bit cell array; a backside wiring layer on a backside of the substrate, the backside wiring layer including backside wiring lines configured to receive the word line signals from the row decoder; and a word line rebuffer configured to provide the word line signals received from the backside wiring lines to the local word lines.

Abstract: A semiconductor device including: first and second transistors on a substrate; an isolation transistor provided between the first and second transistors; a lower power line in a lower portion of the substrate; and a back-side gate contact penetrating the substrate and connected to the lower power line and a dummy gate electrode of the isolation transistor.

Abstract: An integrated circuit includes: a substrate including a cell area and a dummy area, wherein a plurality of cells are arranged in the cell area; a front-side wiring layer arranged over a front surface of the substrate in a vertical direction, wherein the front-side wiring layer includes a first pattern extending in a first direction across the cell area and the dummy area and a second pattern extending in a second direction intersecting the first direction and contacting the first pattern; a through via overlapping the front-side wiring layer in the vertical direction in the dummy area and passing through the substrate; and a back-side wiring layer arranged on a rear surface of the substrate, wherein the back-side wiring layer is connected through the through via and the front-side wiring layer to at least one transistor included in the plurality of cells.

Abstract: An integrated circuit may include a bit cell array including a plurality of bit cells and a peripheral region including a peripheral circuit. The peripheral region may include a plurality of devices over a substrate, at least one pattern configured to provide a first voltage to at least one of the plurality of devices, at least one power line extending under the substrate, and at least one first via passing through the substrate in a vertical direction in the peripheral region and electrically connecting the at least one pattern to the at least one power line.

Abstract: Provided is an integrated circuit including a cell region in which a plurality of cells are arranged, and a peripheral region in which a circuit configured to control the plurality of cells is arranged, wherein the cell region further includes a plurality of first gate lines over a substrate, a plurality of first patterns in a first wiring layer above the plurality of first gate lines, a plurality of second patterns extending in a first horizontal direction in a backside wiring layer under the substrate, and a plurality of first vias, each of the plurality of first vias passing through the substrate in a vertical direction, wherein each of the plurality of first vias includes a top surface connected to a respective one of the plurality of first patterns and a bottom surface connected to a respective one of the plurality of second patterns.

Abstract: A dual-port static random access memory (SRAM) cell is provided. The dual-port SRAM cell includes: P-type active patterns that are spaced apart from one another along a first direction, each of the P-type active patterns extending in a second direction perpendicular to the first direction and including at least one transistor. The P-type active patterns include first through sixth P-type active patterns which are sequentially arranged along the first direction. A first cutting area is provided between the second P-type active pattern and a first boundary of the dual-port SRAM cell that extends along the first direction, and a second cutting area is provided between the fifth P-type active pattern and a second boundary that is opposite to the first boundary and extends along the first direction.

Abstract: Provided is a BCH decoder in which a folded multiplier is equipped. The BCH decoder may include a key equation solver including a plurality of multipliers. The multiplier includes a plurality of calculation blocks configured to perform a calculation operation. Each of the calculation blocks repeatedly performs a calculation operation of a calculation stage for a plurality of calculation stages, outputs one output value on the basis of at least one input value in each calculation stage, and is connected to at least one another calculation block to transfer an output value of a current calculation stage as an input value of the at least one another calculation block in a next calculation stage.

Abstract: Provided is a BCH decoder in which a folded multiplier is equipped. The BCH decoder may include a key equation solver including a plurality of multipliers. The multiplier includes a plurality of calculation blocks configured to perform a calculation operation. Each of the calculation blocks repeatedly performs a calculation operation of a calculation stage for a plurality of calculation stages, outputs one output value on the basis of at least one input value in each calculation stage, and is connected to at least one another calculation block to transfer an output value of a current calculation stage as an input value of the at least one another calculation block in a next calculation stage.