Abstract: A method of manufacturing a semiconductor structure includes the following steps: providing a first semiconductor wafer, wherein the first semiconductor wafer includes a first dielectric layer and at least one first top metallization structure embedded in the first dielectric layer, and a top surface of the first dielectric layer is higher than a top surface of the first top metallization structure by a first distance; providing a second semiconductor wafer, wherein the second semiconductor wafer includes a second dielectric layer and at least one second top metallization structure embedded in the second dielectric layer, and a top surface of the second top metallization structure is higher than a top surface second dielectric layer of the by a second distance; and hybrid-bonding the first semiconductor wafer and the second semiconductor wafer.

Abstract: An electronic fuse device includes a substrate, an insulating layer on the substrate, a first fuse gate, a first pass gate, and a first readout electrode. The substrate includes a first doping region, a second doping region, and a third doping region having a first conductivity type, and a highly doped region having a second conductivity type different from the first conductivity type. The first doping region is between the second doping region and the highly doped region. The second doping region is between the first doping region and the third doping region. The first fuse gate is on the insulating layer and between the first doping region and the second doping region. The first pass gate is on the insulating layer and between the second doping region and the third doping region. The first readout electrode is electrically connected to the third doping region.

Abstract: An electrical fuse matrix includes a plurality of anti-fuse structures, a plurality of top metal plates, and a plurality of bottom metal plates. The anti-fuse structures are arranged in a matrix, and each of the anti-fuse structure includes a top conductive structure, a bottom conductive structure, and a dielectric film disposed between the top conductive structure and the bottom conductive structure. The anti-fuse structure has an hourglass shape. The top metal plates are disposed on the top conductive structures. The bottom metal plates are disposed on the bottom conductive structures.

Abstract: A semiconductor device and a circuit are provided. The semiconductor device includes a substrate, a first gate structure, a first doped region, and a capacitor structure. The substrate includes a first well region having a first conductive type. The first gate structure is disposed on the substrate. The first doped region is in the substrate and has a second conductive type different from the first conductive type. The first gate structure and the first doped region are included in a first transistor. The capacitor structure includes a first electrode electrically coupled to the first doped region. The second doped region is in the substrate and has the second conductive type. The second doped region is electrically coupled to the first electrode of the capacitor structure and the first doped region.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, a semiconductor layer, and a word line. The bit line is disposed over the substrate. The semiconductor layer is disposed over the bit line. The word line abuts the semiconductor layer. The word line has a lower surface facing the substrate and an upper surface opposite to the lower surface. The semiconductor layer includes a first doped region with a first conductive type, a second doped region with a second conductive type opposite to the first conductive type. The first doped region is disposed between the second doped region and the bit line. The first boundary between the first doped region and the second doped region is substantially aligned with the lower surface of the word line.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, a semiconductor layer, and a word line. The bit line is disposed over the substrate. The semiconductor layer is disposed over the bit line. The word line abuts the semiconductor layer. The word line has a lower surface facing the substrate and an upper surface opposite to the lower surface. The semiconductor layer includes a first doped region with a first conductive type, a second doped region with a second conductive type opposite to the first conductive type. The first doped region is disposed between the second doped region and the bit line. The first boundary between the first doped region and the second doped region is substantially aligned with the lower surface of the word line.

Abstract: The present disclosure provides a semiconductor structure including a substrate; a redistribution layer (RDL) disposed over the substrate, and including a dielectric layer over the substrate, a conductive plug extending within the dielectric layer, and a bonding pad adjacent to the conductive plug and surrounded by the dielectric layer; and a conductive bump disposed over the conductive plug, wherein the bonding pad is at least partially in contact with the conductive plug and the conductive bump. Further, a method of manufacturing the semiconductor structure is also provided.

Abstract: A semiconductor structure includes a substrate, an anti-fuse, first and second transistors, a contact structure, and a dielectric layer. The substrate includes a well region and first and second conductivity type doped regions in the well region, in which the second conductivity type doped region surrounds the first conductivity type doped region and includes a first portion and a second portion perpendicular to the first portion in a top view. The anti-fuse is in an anti-fuse region of the first conductivity type doped region. The first and second transistors are in the well region. The anti-fuse is disposed between the first and second transistors, and the anti-fuse is electrically connected to the first and second transistors. The contact structure is above the anti-fuse. The dielectric layer is between the contact structure and the anti-fuse region of the first conductivity type doped region.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bonding structure, a bit line, and a word line. The bonding structure is disposed on the substrate. The bit line is disposed on the bonding structure. The channel layer is disposed on the bit line. The word line surrounds the channel layer. The bonding structure includes a dielectric material.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bonding structure, a bit line, and a word line. The bonding structure is disposed on the substrate. The bit line is disposed on the bonding structure. The channel layer is disposed on the bit line. The word line surrounds the channel layer. The bonding structure includes a dielectric material.

Abstract: A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate; a transistor disposed over the substrate; and a trench fuse disposed in the substrate and penetrating a source/drain (S/D) region of the transistor. A method for manufacturing the semiconductor structure is also provided.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate; a transistor disposed over the substrate; and a trench fuse disposed in the substrate and penetrating a source/drain (S/D) region of the transistor. A method for manufacturing the semiconductor structure is also provided.

Abstract: The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and a function of the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.

Abstract: The present disclosure provides a mothed of method of manufacturing a semiconductor device. The method includes steps of forming a dielectric layer on a substrate; etching the dielectric layer to create a plurality of openings in the dielectric layer; applying a sacrificial layer in at least one of the openings to cover at least a portion of the dielectric layer; forming at least one first conductive feature in the openings where the sacrificial layer is disposed and a plurality of bases in the openings where the sacrificial layer is not disposed; removing the sacrificial layer to form at least one air gap in the dielectric layer; and forming a plurality of protrusions on the bases.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first dielectric layer on a substrate; first/second upper short axis portions extending along a first direction, separated from each other, and on the first dielectric layer; a common source region in the substrate and adjacent to the first/second upper short axis portions; a first branch drain region in the substrate, adjacent to the first upper short axis portion, and opposite to the common source region; a second branch drain region in the substrate, adjacent to the second upper short axis portion, and opposite to the common source region; and a top electrode on the first dielectric layer and topographically above the first branch drain region and the second branch drain region. The top electrode, the first dielectric layer, and the first/second branch drain regions together configure a programmable unit.

Abstract: A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

Abstract: The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a fusion-bonding interface is formed between the first device wafer and the second device wafer, wherein the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having an active area and a fuse component. The fuse component has a bottom electrode in the active area, a first dielectric layer on the active area and a top electrode on the first dielectric layer. The semiconductor device also includes a second dielectric layer on the active area and surrounding the first dielectric layer.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a substrate having an active area and forming a first diffusion area in the active area. The method also includes disposing a nitride layer on the active area and forming an opening in the nitride layer to expose the first diffusion area. The method also includes disposing an oxide layer in the opening to contact the first diffusion area.