Patents by Inventor Hsin-Hsuan Lee

Hsin-Hsuan Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11380542
    Abstract: Embodiments disclosed herein relate generally to capping processes and structures formed thereby. In an embodiment, a conductive feature, formed in a dielectric layer, has a metallic surface, and the dielectric layer has a dielectric surface. The dielectric surface is modified to be hydrophobic by performing a surface modification treatment. After modifying the dielectric surface, a capping layer is formed on the metallic surface by performing a selective deposition process. In another embodiment, a surface of a gate structure is exposed through a dielectric layer. A capping layer is formed on the surface of the gate structure by performing a selective deposition process.
    Type: Grant
    Filed: September 4, 2020
    Date of Patent: July 5, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chien Chi, Pei-Hsuan Lee, Hung-Wen Su, Hsiao-Kuan Wei, Jui-Fen Chien, Hsin-Yun Hsu
  • Publication number: 20220149116
    Abstract: A photosensitive device including a microlens substrate, a photosensitive element substrate, and an optical glue is provided. The microlens substrate includes a first substrate and microlenses. The first substrate has a first side and a second side opposite to the first side. The microlenses are located on the first side of the first substrate. The photosensitive element substrate includes a second substrate, active components, first electrodes, a second electrode, and an organic photosensitive material layer. The second substrate has a third side and a fourth side opposite to the third side. The second side of the first substrate faces the third side of the second substrate. The active components are located on the fourth side of the second substrate. The first electrodes are respectively electrically connected to the active components. The organic photosensitive material layer is located between the first electrodes and the second electrode.
    Type: Application
    Filed: June 18, 2021
    Publication date: May 12, 2022
    Applicant: Au Optronics Corporation
    Inventors: Yi-Huan Liao, Chun Chang, Hsin-Hsuan Lee