Abstract: A semiconductor structure includes a plurality of solder structures between a first substrate and a second substrate. A first encapsulation material is substantially around a first one of the solder structures and a second encapsulation material is substantially around a second one of the solder structures. The first one and the second one of the solder structures are near to each other and a gap is between the first encapsulation material and the second encapsulation material.

Abstract: A semiconductor wafer is fabricated. The wafer has a plurality of dies. The plurality of dies include at least operable dies of a first type and operable dies of a second type different from the first type. The dies of the second type are rendered inoperable, while keeping the dies of the first type operable. The wafer is provided with the operable dies of the first type and the inoperable dies of the second type on it, for testing of the dies of the first type.

Abstract: A method for forming a semiconductor structure includes forming a first connector over at least one pad of a first substrate, the first connector having at least one curved sidewall. An encapsulation layer is formed at least partially over the first connector so as to partially expose a top surface of the first connector. A solder structure is formed, contacting the first connector.

Abstract: A scribe line layout design to reduce the damage caused by sawing the wafer is presented. An embodiment comprises metal plates located within the scribe lines and at least partially within the junctions of the scribe lines. Each of these metal plates has one or more slots to help relieve the pressure. Alternatively, instead of metal plates, grooves that may be filled with metal could be placed into the scribe lines. These metal plates could also be used concurrently with a seal ring for better protection during sawing.

Abstract: A semiconductor package assembly comprises a first conductive pad on a semiconductor substrate; a second conductive pad on a package substrate; a bump physically coupled between the first conductive pad and the second conductive pad, wherein the bump is substantially lead-free or high-lead-containing; the bump has a first interface with the first conductive pad, the first interface having a first linear dimension; the bump has a second interface with the second conductive pad, the second interface having a second linear dimension; and wherein the ratio of the first linear dimension and the second linear dimension is between about 0.7 and about 1.7.

Abstract: A semiconductor package assembly comprises a first conductive pad on a semiconductor substrate; a second conductive pad on a package substrate; a bump physically coupled between the first conductive pad and the second conductive pad, wherein the bump is substantially lead-free or high-lead-containing; the bump has a first interface with the first conductive pad, the first interface having a first linear dimension; the bump has a second interface with the second conductive pad, the second interface having a second linear dimension; and wherein the ratio of the first linear dimension and the second linear dimension is between about 0.7 and about 1.7.

Abstract: A fabrication method of an indium tin oxide (ITO) anode containing nickel for improving injection efficiency of an organic light emitting diode (OLED) includes various processes of preparing an ITO substrate with an anode, of preparing a target source of ITO containing nickel, and of mingling nickel on the anode of the ITO substrate by sputtering. The structure of the ITO anode containing nickel for an OLED includes a substrate with an anode mingled with nickel, a hole transport layer and an electron transport layer. Such an ITO anode is to have a higher work function that can lessen a great potential barrier between the ITO anode and a hole transport layer. So the threshold voltage and the turn-on voltage of OLED can be reduced to advance hole injection efficiency.

Abstract: A multi-layered semiconductor structure with free areas limiting the placement of test keys. First and second scribe lines intersect to define one corner point of a die. The first and second scribe lines are part of the multilayered structure and at least one layer of the multi-layer structure is a low-k dielectric layer. Free area A1 is defined on the first scribe line and is defined by the equation A1=D1×S1, where D1 is the distance from the corner point of the die toward the main area of the die, and S1 is the width of the first scribe line. Free area AS is defined at the intersection of the first scribe line and the second scribe line adjacent the die and is defined by the equation AS=S1×S2, where S2 is the width of the second scribe line.

Abstract: A packaged semiconductor chip comprising an integrated circuit chip including a low-k dielectric layer and a chip substrate, wherein an edge of the integrated circuit chip has a first edge portion and a second edge portion. At least part of the first edge portion being across a same level as the low-k dielectric layer, and the first edge portion having been laser ablated to have a series of rounded recesses formed therein. The second edge portion being across a same level as at least part of the chip substrate, and the second edge portion having a different surface texture than that of the first edge portion. The packaged semiconductor chip also comprises a packaging substrate having the integrated circuit chip attached and a plurality of solder bumps electrically connecting between the packaging substrate and the integrated circuit chip.

Abstract: A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.

Abstract: A method of cutting an integrated circuit chip from a wafer having a plurality of integrated circuit chips is provided. An upper portion of the wafer is ablated using two laser beams to form two substantially parallel trenches that extend into the wafer from a top surface of the wafer through intermetal dielectric layers and at least partially into a substrate of the wafer. After the ablating to form the two trenches, cutting through the wafer between outer sidewalls of the two laser-ablated trenches with a saw blade is performed. A width between the outer sidewalls of the two laser-ablated trenches is greater than a cutting width of the saw blade. This may be particularly useful in lead-free packaging applications and/or applications where the intermetal dielectric layers use low-k dielectric materials, for example.

Abstract: A substrate structure comprising a substrate; a solder mask is formed over the substrate; and a metal trace structure formed within the solder mask. The metal trace structure including a channel therein for the receipt of underfill. The metal trace structure further including a central portion with arms radiating outwardly therefrom, dividing the solder mask into separate areas. A method of underfilling a chip wherein a chip having a pattern of solder bumps formed on the underside of the chip is placed underside first onto the metal trace structure of the present invention. The solder bump pattern including openings over the metal trace structure. Underfill is introduced into the metal trace structure so that the underfill flows from the metal trace structure and between the solder bumps to underfill the chip.

Abstract: A method provides for dicing a wafer having a base material with a diamond structure. The wafer first undergoes a polishing process, in which a predetermined portion of the wafer is polished away from its back side. The wafer is then diced through at least one line along a direction at a predetermined offset angle from a natural cleavage direction of the diamond structure. A wafer is produced with one or more dies formed thereon with at least one of its edges at an offset angle from a natural cleavage direction of a diamond structure of a base material forming the wafer. At least one dicing line has one or more protection elements for protecting the dies from undesired cracking while the wafer is being diced along the dicing line.

Abstract: Disclosed are techniques that teach the replacement of the typical organic, plastic, or ceramic package substrate used in semiconductor package devices with a low-CTE package substrate. In one embodiment, a semiconductor device implementing the disclosed techniques is provided, where the device comprises an integrated circuit chip having at least one coupling component formed on an exterior surface thereof. Also, the device includes a package substrate having a mounting surface with bonding pads that are configured to receive the at least one coupling component. In such embodiments, the package substrate is selected or manufactured such that it has a coefficient of thermal expansion in a direction perpendicular to its mounting surface that is less than approximately twice a coefficient of thermal expansion along a plane parallel to its mounting surface.

Abstract: A method is disclosed for dicing a wafer having a base material with a diamond structure. The wafer first undergoes a polishing process, in which a predetermined portion of the wafer is polished away from its back side. The wafer is then diced through at least one line along a direction at a predetermined offset angle from a natural cleavage direction of the diamond structure.

Abstract: A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

Abstract: Disclosed are techniques that teach the replacement of the typical organic, plastic, or ceramic package substrate used in semiconductor package devices with a low-CTE package substrate. In one embodiment, a semiconductor device implementing the disclosed techniques is provided, where the device comprises an integrated circuit chip having at least one coupling component formed on an exterior surface thereof. Also, the device includes a package substrate having a mounting surface with bonding pads that are configured to receive the at least one coupling component. In such embodiments, the package substrate is selected or manufactured such that it has a coefficient of thermal expansion in a direction perpendicular to its mounting surface that is less than approximately twice a coefficient of thermal expansion along a plane parallel to its mounting surface.

Abstract: Disclosed are techniques that teach the replacement of the typical organic, plastic, or ceramic package substrate used in semiconductor package devices with a low-CTE package substrate. In one embodiment, a semiconductor device implementing the disclosed techniques is provided, where the device comprises an integrated circuit chip having at least one coupling component formed on an exterior surface thereof. Also, the device includes a package substrate having a mounting surface with bonding pads that are configured to receive the at least one coupling component. In such embodiments, the package substrate is selected or manufactured such that it has a coefficient of thermal expansion in a direction perpendicular to its mounting surface that is less than approximately twice a coefficient of thermal expansion along a plane parallel to its mounting surface.

Abstract: A method for encapsulating an integrated circuit chip is described. An intergrated circuit chip is attached to a substrate; a stress buffering material only covers corners of the integrated circuit chip; and an encapsulation material coats the integated circuit chip and a portion of the substrate.

Abstract: A novel integrated circuit (IC) chip package structure and underfill process which reduces stress applied to corners of a flip chip in an IC package structure during the application of an adhesive material between the flip chip and a carrier substrate is disclosed. The process includes providing a dam structure on a carrier substrate; attaching solder bumps of an inverted flip chip to the carrier substrate; injecting an adhesive material between the flip chip and the carrier substrate at multiple injection points located along adjacent edges of the flip chip; and injecting a sealant material around the adhesive material. During application of the adhesive material and the sealant material to the IC package structure in the underfill process, the dam structure reduces stress applied to the corners of the flip chip. This prevents or at least reduces de-lamination of dielectric layers on the flip chip.