Abstract: The invention provides a transistor structure and a manufacturing method thereof. The transistor structure includes a substrate, a first gate, a second gate, a first gate dielectric layer, and a second gate dielectric layer. The first gate and the second gate are located on the substrate. The first gate dielectric layer is located between the first gate and the substrate. The first gate dielectric layer has a single thickness. The second gate dielectric layer is located between the second gate and the substrate. The second gate dielectric layer has a plurality of thicknesses. A maximum thickness of the first gate dielectric layer is the same as a maximum thickness of the second gate dielectric layer. The transistor structure may reduce process complexity.

Abstract: A linear guideway, a sliding module thereof, and a circulation seat thereof are provided. The circulation seat has an inherently one-piece structure, which includes two turning portions, a middle retaining portion, and two lateral retaining portions. The middle retaining portion has a two-stepped structure, which includes a connection bar and a limiting bar that is connected to the connection bar. The connection bar is connected to and arranged between the two turning portions, and a distance between two long lateral surfaces of the connection bar gradually increases along a direction away from the limiting bar. The two lateral retaining portions are connected to and arranged between the two turning portions, and the two lateral retaining portions are respectively located at two opposite sides of the middle retaining portion.

Abstract: A beta2-microglobulin concentration analyzing method includes: preparing a sample with dialysate, and putting the sample into a differential mobility analyzing device for analysis to obtain a beta2-microglobulin concentration. The present invention further provides a beta2-microglobulin concentration analyzing system, which includes: a preparation device and a differential mobility analyzing device, wherein the preparation device is configured to prepare a sample with dialysate, and the differential mobility analyzing device is configured to analyze the sample to obtain a beta2-microglobulin concentration.

Abstract: A lithium-ion coin battery having a winding core as an anode lead and a cathode lead is provided in the present invention, including a winding core having a first electrode section, a second electrode section and an insulating section isolating the first electrode section and the second electrode section, an electrode winding having a first electrode sheet, a second electrode sheet and a separator isolating between the first electrode sheet and the second electrode sheet, wherein the electrode winding winds on the winding core, and the first electrode sheet is electrically coupled with the first electrode section of the winding core, the second electrode sheet is electrically coupled with the second electrode section of the winding core, and the separator is coupled with the insulating section of the winding core.

Abstract: A method for fabricating a package structure is provided. The method includes premixing cellulose nanofibrils (CNFs) and a two-dimensional (2D) material in a solvent to form a solution; removing the solvent from the solution to form a composite filler; mixing a prepolymeric material with the composite filler to form a composite material; and performing a molding process using the composite material.

Abstract: A semiconductor device having a standard cell comprises a first bottom transistor, a first top transistor, a second bottom transistor, a second top transistor, and a first bottom-transistor-level metal line. The first bottom transistor is in a first row. The first top transistor is disposed above the first bottom transistor in the first row. The first bottom transistor and the first top transistor share a first gate structure. The second bottom transistor is in a second row next to the first row. The second top transistor is disposed above the second bottom transistor in the second row. The second bottom transistor and the second top transistor share a second gate structure. The first bottom-transistor-level metal line extends laterally from a first source/drain region of the first bottom transistor to a source/drain region of the second bottom transistor.

Abstract: A fabricating method of reducing photoresist footing includes providing a silicon nitride layer. Later, a fluorination process is performed to graft fluoride ions onto a top surface of the silicon nitride layer. After the fluorination process, a photoresist is formed to contact the top surface of the silicon nitride layer. Finally, the photoresist is patterned to remove at least part of the photoresist contacting the silicon nitride layer.

Abstract: A system and method for estimating free space and assigning free space probabilities in point cloud data associated with an autonomous vehicle traveling on a surface, including taking into account sensor noise, sensor availability, obstacle heights, and distance of obstacles from the sensor. System and method can include determining surface planes and classifying point cloud points according to whether or not the points fall on surface planes, among other factors.

Abstract: A vehicle hybrid communication system includes a vehicle communication device and a field communication device. The vehicle communication device includes a vehicle controller and multiple vehicle communication interfaces. The field communication device includes a field controller and multiple field communication interfaces. The vehicle communication device and the field communication device communicate via multiple communication channels established by the vehicle communication interfaces and the field communication interfaces. The vehicle controller respectively defines a bandwidth level and a speed level based on a real-time bandwidth and a real-time connection speed of each of the communication channels. The vehicle controller then creates a score based on the bandwidth level and the speed level of each of the communication channels. The vehicle controller then sets one of the communication channels with the best score as a main communication channel to transfer data to the field communication device.

Abstract: A high electron mobility transistor including a substrate; a channel layer on the substrate; an electron supply layer on the channel layer; a dielectric passivation layer on the electron supply layer; a gate recess in the dielectric passivation layer and the electron supply layer; a surface modification layer on an interior surface of the gate recess; and a P-type GaN layer in the gate recess and on the surface modification layer. The surface modification layer has a gradient silicon concentration.

Abstract: The present disclosure relates to an antibody or antigen-binding fragment thereof that is specific for a spike protein of SARS-CoV-2. The present disclosure also relates to a pharmaceutical composition for treating and/or preventing diseases and/or disorders caused by a coronavirus in a subject in need thereof, and a method for detecting a coronavirus in a sample.

Abstract: A wireless communication system includes a transceiver circuit, a memory circuit, and a processor circuit. The transceiver circuit transmits data through subchannels that includes a first subchannel and a second subchannel. The memory circuit stores a lookup table that indicates corresponding relations between transmission rates and channel indicators.

Abstract: A wireless communication device includes a processor, a baseband signal processing circuit and a wireless transceiver circuit. The processor determines a transmission need, determines a transmission rate according to the transmission need and a channel condition, and provides data and information regarding the transmission rate to the baseband signal processing circuit. The information regarding the transmission rate includes at least one of a selected transmission standard, a selected physical layer data transmission rate and a selected modulation and coding scheme. The baseband signal processing circuit is coupled to the processor and processes the data according to the information regarding the transmission rate to accordingly generate a packet. The wireless transceiver circuit is coupled to the baseband signal processing circuit and transmits the packet.

Abstract: A wireless communication device for a transmission end of a wireless communication system is provided. The wireless communication device includes a wireless analog transmission unit, for transmitting a data packet on a data transmission channel; and a packet generating unit, for generating the data packet and at least one protection packet; wherein before transmitting the data packet on the data transmission channel, the wireless communication device transmits the at least one protection packet on at least one adjacent channel of the data transmission channel to indicate to at least one user of the at least one adjacent channel to stop using the at least one adjacent channel before transmission of the data packet is completed, and at least one frequency band of the at least one adjacent channel overlaps a frequency band of the data transmission channel.

Abstract: A fabricating method of a middle voltage transistor includes providing a substrate. A gate predetermined region is defined on the substrate. Next, a mask layer is formed to cover only part of the gate predetermined region. Then, a first ion implantation process is performed to implant dopants into the substrate at two sides of the mask layer to form two first lightly doping regions. After removing the mask layer, a gate is formed to overlap the entirety gate predetermined region. Subsequently, two second lightly doping regions respectively formed within one of the first lightly doping regions. Next, two source/drain doping regions are respectively formed within one of the second lightly doping regions. Finally, two silicide layers are formed to respectively cover one of the source/drain doping regions.

Abstract: A wearable ultrasonic therapeutic device controlled by a mobile electronic device is provided, which includes a mobile device, at least one ultrasonic probe module and a strap. The mobile device has a mobile device control interface for setting ultrasonic parameters and displaying an echo wave through a specific software interface of the mobile device. The ultrasonic probe module includes at least one ultrasonic transducer and a control circuit corresponding thereto. The ultrasonic transducer generates and receives an ultrasonic wave. The control circuit has the functions of generating/receiving signals, phase regulation, power amplification and matching. One end of the ultrasonic probe module is electrically connected to the mobile device and the other end of the ultrasonic probe module is connected to the strap.

Abstract: A method for forming a high electron mobility transistor is disclosed. A substrate is provided. A channel layer is formed on the substrate. An electron supply layer is formed on the channel layer. A dielectric passivation layer is formed on the electron supply layer. A gate recess is formed into the dielectric passivation layer and the electron supply layer. A surface modification layer is conformally deposited on an interior surface of the gate recess. The surface modification layer is first subjected to the nitride treatment and is then subjected to the oxidation treatment. A P-type GaN layer is formed in the gate recess and on the surface modification layer.

Abstract: A gaming system for card games is provided. The gaming system includes a plurality of gaming cards and a processor. Each of the gaming cards has a recognition code. The processor is configured to: generate a correspondence between the recognition codes of the gaming cards and a plurality of card faces; obtain an image of the gaming card placed in a recognition area captured by an image capturing device; recognize the recognition code in the image to generate game data according to a recognition result and the correspondence; and generate a game screen to be displayed by a display according to the game data. In addition, a gaming table is also provided.

Abstract: A method for forming a high electron mobility transistor is disclosed. A substrate is provided. A channel layer is formed on the substrate. An electron supply layer is formed on the channel layer. A dielectric passivation layer is formed on the electron supply layer. A gate recess is formed into the dielectric passivation layer and the electron supply layer. A surface modification layer is conformally deposited on an interior surface of the gate recess. The surface modification layer is then subjected to an oxidation treatment or a nitridation treatment. A P-type GaN layer is formed in the gate recess and on the surface modification layer.

Abstract: An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from the composition of the second III-V compound layer. A trench is disposed within the first III-V compound layer and the second III-V compound layer. The trench has a first corner and a second corner. The first corner and the second corner are disposed in the first III-V compound layer. A first dielectric layer contacts a sidewall of the first corner. A second dielectric layer contacts a sidewall of the second corner. The first dielectric layer and the second dielectric layer are outside of the trench. A gate is disposed in the trench. A source electrode and a drain electrode are respectively disposed at two sides of the gate. A gate electrode is disposed directly on the gate.