Abstract: A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas. A first drive-in process is then performed to drive fluorine in the fluorine-containing gas into the gate dielectric. The method further includes performing a second treatment process on the gate dielectric, wherein the second treatment process is performed using the fluorine-containing gas, and performing a second drive-in process to drive fluorine in the fluorine-containing gas into the gate dielectric. After the second drive-in process, conductive layers are formed to fill the trench.

Abstract: A method includes providing a structure having a first channel member and a second channel member over a substrate. The first channel member is located in a first region of the structure and the second channel member is located in a second region of the structure. The method also includes forming a first oxide layer over the first channel member and a second oxide layer over the second channel member, forming a first dielectric layer over the first oxide layer and a second dielectric layer over the second oxide layer, and forming a capping layer over the second dielectric layer but not over the first dielectric layer. The method further includes performing an annealing process to increase a thickness of the second oxide layer under the capping layer.

Abstract: A method of forming a semiconductor device includes: forming, in a first device region of the semiconductor device, first nanostructures over a first fin that protrudes above a substrate; forming, in a second device region of the semiconductor device, second nanostructures over a second fin that protrudes above the substrate, where the first and the second nanostructures include a semiconductor material and extend parallel to an upper surface of the substrate; forming a dielectric material around the first and the second nanostructures; forming a first hard mask layer in the first device region around the first nanostructures and in the second device region around the second nanostructures; removing the first hard mask layer from the second device region after forming the first hard mask layer; and after removing the first hard mask layer, increasing a first thickness of the dielectric material around the second nanostructures by performing an oxidization process.

Abstract: A method of forming a semiconductor device includes: forming, in a first device region of the semiconductor device, first nanostructures over a first fin that protrudes above a substrate; forming, in a second device region of the semiconductor device, second nanostructures over a second fin that protrudes above the substrate, where the first and the second nanostructures include a semiconductor material and extend parallel to an upper surface of the substrate; forming a dielectric material around the first and the second nanostructures; forming a first hard mask layer in the first device region around the first nanostructures and in the second device region around the second nanostructures; removing the first hard mask layer from the second device region after forming the first hard mask layer; and after removing the first hard mask layer, increasing a first thickness of the dielectric material around the second nanostructures by performing an oxidization process.

Abstract: In an embodiment, a semiconductor device includes a first channel region disposed in a first device region over a substrate; a first gate dielectric layer disposed over the first channel region; and a gate electrode disposed over the first gate dielectric layer. The first gate dielectric layer includes a first dipole dopant and a second dipole dopant. The first dipole dopant along a thickness direction of the first gate dielectric layer has a first concentration peak, and the second dipole dopant along the thickness direction of the first gate dielectric layer has a second concentration peak. The second concentration peak is located between the first concentration peak and an upper surface of the first gate dielectric layer. The second concentration peak is offset from the upper surface of the first gate dielectric layer.

Abstract: A method includes providing a structure having a first channel member and a second channel member over a substrate. The first channel member is located in a first region of the structure and the second channel member is located in a second region of the structure. The method also includes forming a first oxide layer over the first channel member and a second oxide layer over the second channel member, forming a first dielectric layer over the first oxide layer and a second dielectric layer over the second oxide layer, and forming a capping layer over the second dielectric layer but not over the first dielectric layer. The method further includes performing an annealing process to increase a thickness of the second oxide layer under the capping layer.

Abstract: A method of forming a semiconductor device includes: forming, in a first device region of the semiconductor device, first nanostructures over a first fin that protrudes above a substrate; forming, in a second device region of the semiconductor device, second nanostructures over a second fin that protrudes above the substrate, where the first and the second nanostructures include a semiconductor material and extend parallel to an upper surface of the substrate; forming a dielectric material around the first and the second nanostructures; forming a first hard mask layer in the first device region around the first nanostructures and in the second device region around the second nanostructures; removing the first hard mask layer from the second device region after forming the first hard mask layer; and after removing the first hard mask layer, increasing a first thickness of the dielectric material around the second nanostructures by performing an oxidization process.

Abstract: Methods of fabricating semiconductor devices are provided. The method includes forming a first fin and a second fin over a substrate, and conformally forming a silicon oxide layer over the first fin using a first atomic layer deposition (ALD) process. The method also includes conformally forming a silicon nitride layer over the silicon oxide layer using a second ALD process, and forming an insulating layer to fill the trench between the first fin and the second fin over the substrate. The method further includes recessing the insulating layer, the silicon oxide layer, and the silicon nitride layer to form an isolation structure with a liner. In addition, the method includes forming a gate structure over the first fin, and forming a source region and a drain region in the first fin and on opposite sides of the gate structure.

Abstract: Methods of fabricating semiconductor devices are provided. The method includes forming a first fin and a second fin over a substrate, and conformally forming a silicon oxide layer over the first fin using a first atomic layer deposition (ALD) process. The method also includes conformally forming a silicon nitride layer over the silicon oxide layer using a second ALD process, and forming an insulating layer to fill the trench between the first fin and the second fin over the substrate. The method further includes recessing the insulating layer, the silicon oxide layer, and the silicon nitride layer to form an isolation structure with a liner. In addition, the method includes forming a gate structure over the first fin, and forming a source region and a drain region in the first fin and on opposite sides of the gate structure.

Abstract: An optical assembly, a backlight module and a liquid crystal display are provided. The optical assembly includes a light guide plate and a frame. The light guide plate has at least one first circular-arc structure disposed on a side of the light guide plate. The frame is disposed around the light guide plate, in which the frame has at least one second circular-arc structure interlocked with the first circular-arc structure. A radius of the first circular-arc structure is substantially equal to a radius of the second circular-arc structure.

Abstract: An optical assembly, a backlight module and a liquid crystal display are provided. The optical assembly includes a light guide plate and a frame. The light guide plate has at least one first circular-arc structure disposed on a side of the light guide plate. The frame is disposed around the light guide plate, in which the frame has at least one second circular-arc structure interlocked with the first circular-arc structure. A radius of the first circular-arc structure is substantially equal to a radius of the second circular-arc structure.

Abstract: An optical assembly, a backlight module and a liquid crystal display are provided. The optical assembly includes a light guide plate and a frame. The light guide plate has at least one first circular-arc structure disposed on a side of the light guide plate. The frame is disposed around the light guide plate, in which the frame has at least one second circular-arc structure interlocked with the first circular-arc structure. A radius of the first circular-arc structure is substantially equal to a radius of the second circular-arc structure.

Abstract: A light guide plate and a light source module are provided. Light guide plate includes a main body and microstructures disposed on the main body. The main body includes a light-incident surface and a light-emitting surface. Each of the microstructures includes a first optical surface, a second optical surface, a third optical surface and a fourth optical surface. The first optical surface and the second optical surface are inclined in relation to the light-incident surface. A first angle is included between the first optical surface and the light-emitting surface. A second angle is included between the second optical surface and the light-emitting surface. The third optical surface and the fourth optical surface connect the first optical surface and the second optical surface. A third angle is included between the third optical surface and the light-emitting surface. A fourth angle is included between the fourth optical surface and the light-emitting surface.

Abstract: An optical assembly, a backlight module and a liquid crystal display are provided. The optical assembly includes a light guide plate and a frame. The light guide plate has at least one first circular-arc structure disposed on a side of the light guide plate. The frame is disposed around the light guide plate, in which the frame has at least one second circular-arc structure interlocked with the first circular-arc structure. A radius of the first circular-arc structure is substantially equal to a radius of the second circular-arc structure.

Abstract: A light guide device includes a light guide plate and a reflector. The light guide plate includes a light transmissive body with opposite first and second surfaces, and a plurality of first and second light guide structures extending along a first direction. The first light guide structures are disposed on the first surface, and the second light guide structures are disposed on the second surface. The reflector includes a reflector body and a plurality of reflecting structures formed on the reflector body and extending along a second direction. The first and second directions are perpendicular to each other. The reflecting structures are formed on one side of the reflector body facing the first surface.