Patents by Inventor Hsueh-Shih Chen
Hsueh-Shih Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11685861Abstract: A quantum dot structure includes a core and an inner shell. The core is a single crystal of a compound M1C1, and has a core surface having a first region and a second region. The first region has a crystal plane that is inactive with oxygen, and the second region has a crystal plane that is easily reactive with oxygen. The inner shell is a single crystal of a compound M2C2, and is formed on the first region of the core surface. A method for making the quantum dot structure is also disclosed.Type: GrantFiled: July 21, 2021Date of Patent: June 27, 2023Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Chang-Wei Yeh, Hsueh-Shih Chen
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Patent number: 11584995Abstract: A clustered reaction system includes multiple reaction devices, a cooling device and a gas supply device. Each of the reaction devices includes a reaction tank unit defining a reaction space, multiple through holes extending through the reaction tank unit, a heat exchange module including a heat exchange passage surrounding the reaction tank, and an injection module extending through one of the through hole. The cooling device is connected to the heat exchange passages of the reaction devices for supplying a coolant into the heat exchange passages. The gas supply device is communicated fluidly with one of the through holes of each of the reaction devices for supplying a gas to the reaction devices.Type: GrantFiled: October 22, 2020Date of Patent: February 21, 2023Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Shih-Jung Ho, Hsueh-Shih Chen
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Publication number: 20220267672Abstract: A quantum dot structure includes a core and an inner shell. The core is a single crystal of a compound M1C1, and has a core surface having a first region and a second region. The first region has a crystal plane that is inactive with oxygen, and the second region has a crystal plane that is easily reactive with oxygen. The inner shell is a single crystal of a compound M2C2, and is formed on the first region of the core surface. A method for making the quantum dot structure is also disclosed.Type: ApplicationFiled: July 21, 2021Publication date: August 25, 2022Inventors: Chang-Wei YEH, Hsueh-Shih CHEN
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Patent number: 11401466Abstract: A nanocrystal with a large Stokes shift includes a matrix domain having a composition of M1xM2yAz, and a plurality of seed domains which are distributed in the matrix domain and each of which has a composition of M1x?M2y?Az?, wherein M1, M2, A, x, y, z, x?, y?, and z? are as defined herein.Type: GrantFiled: August 17, 2018Date of Patent: August 2, 2022Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Hsueh-Shih Chen, Yi-Ching Yang
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Patent number: 11341895Abstract: A method for application in a QLED display device is provided for cancelling optical crosstalk occurring in a QLED display panel consisting of M number of anode wires, N number of cathode wires, and M×N number of QLED elements. In case of the method being implemented in the QLED display device, a control unit is configured for controlling a column driver unit to supply a positive bias voltage to at least one QLED element that is addressingly selected. In the meantime, the control unit also controls a low driver unit to supply a reverse bias voltage to each of the QLED elements that are not selected. In such case, when the addressingly-selected QLED element achieves a light emission normally, each of the QLED elements that are not selected is reversely biased for failing to produce optical crosstalk.Type: GrantFiled: July 2, 2020Date of Patent: May 24, 2022Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Kuo-Yang Lai, Hsueh-Shih Chen
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Patent number: 11342522Abstract: A white-light QLED component, comprising: a transparent substrate, an anode layer, a HI layer, a HT layer, an emission layer, an ET layer, and a cathode layer. The emission layer is incorporated with a plurality of yellow QDs and a plurality of blue QDs, wherein the yellow QDs and the blue QDs have a mixing ratio in a range between 1:4 and 1:8. Experimental data have revealed that, a color temperature of a white light radiated from the white-light QLED component is modulatable by adjusting the weight percent of the yellow QDs in the emission layer, such that the QLED component can be decided to provide a cold white light, a pure white light or a warm white light. It can also control the white-light QLED component to optionally emit cold white light, pure white light or warm white light by modulating a bias voltage.Type: GrantFiled: July 2, 2020Date of Patent: May 24, 2022Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Hsueh-Shih Chen, Shuan Yang
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Patent number: 11279874Abstract: A quantum dot is represented by Zn0.5-xCdxS0.5-ySey and has a size ranging from 7 nm to 20 nm, wherein 0<x<0.2, 0.005?y<0.2, and Zn, Cd, S, and Se are non-uniformly distributed therein.Type: GrantFiled: July 23, 2020Date of Patent: March 22, 2022Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Hsueh-Shih Chen, Chang-Wei Yeh
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Publication number: 20210363641Abstract: A clustered reaction system includes multiple reaction devices, a cooling device and a gas supply device. Each of the reaction devices includes a reaction tank unit defining a reaction space, multiple through holes extending through the reaction tank unit, a heat exchange module including a heat exchange passage surrounding the reaction tank, and an injection module extending through one of the through hole. The cooling device is connected to the heat exchange passages of the reaction devices for supplying a coolant into the heat exchange passages. The gas supply device is communicated fluidly with one of the through holes of each of the reaction devices for supplying a gas to the reaction devices.Type: ApplicationFiled: October 22, 2020Publication date: November 25, 2021Inventors: Shih-Jung HO, Hsueh-Shih CHEN
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Publication number: 20210340438Abstract: A composite quantum dot includes a quantum dot and a protecting unit. The quantum dot includes a dot body containing a first layer having a composition of M1A1, and a passivating unit containing a passivating metal ion and bound to the dot body. M1 is one of Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is one of Se, S, Te, P, As, N, I and O. The protecting unit adsorbs on the quantum dot and includes an amine compound and/or a primary ammonium salt thereof. A method for preparing the composite quantum dot and a method for detecting metal ions in an analyte aqueous solution using the composite quantum dot, as well as a passivated quantum dot and a preparation thereof, are also disclosed.Type: ApplicationFiled: January 11, 2021Publication date: November 4, 2021Inventors: Hsueh-Shih CHEN, Pin-Ju CHEN
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Publication number: 20210340440Abstract: A quantum dot is represented by Zn0.5-xCdxS0.5-ySey and has a size ranging from 7 nm to 20 nm, wherein 0<x<0.2, 0.005?y<0.2, and Zn, Cd, S, and Se are non-uniformly distributed therein.Type: ApplicationFiled: July 23, 2020Publication date: November 4, 2021Applicant: National Tsing Hua UniversityInventors: Hsueh-Shih CHEN, Chang-Wei YEH
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Publication number: 20210319741Abstract: A method for application in a QLED display device is provided for cancelling optical crosstalk occurring in a QLED display panel consisting of M number of anode wires, N number of cathode wires, and M×N number of QLED elements. In case of the method being implemented in the QLED display device, a control unit is configured for controlling a column driver unit to supply a positive bias voltage to at least one QLED element that is addressingly selected. In the meantime, the control unit also controls a low driver unit to supply a reverse bias voltage to each of the QLED elements that are not selected. In such case, when the addressingly-selected QLED element achieves a light emission normally, each of the QLED elements that are not selected is reversely biased for failing to produce optical crosstalk.Type: ApplicationFiled: July 2, 2020Publication date: October 14, 2021Inventor: HSUEH-SHIH CHEN
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Publication number: 20210320271Abstract: A white-light QLED component, comprising: a transparent substrate, an anode layer, a HI layer, a HT layer, an emission layer, an ET layer, and a cathode layer. The emission layer is incorporated with a plurality of yellow QDs and a plurality of blue QDs, wherein the yellow QDs and the blue QDs have a mixing ratio in a range between 1:4 and 1:8. Experimental data have revealed that, a color temperature of a white light radiated from the white-light QLED component is modulatable by adjusting the weight percent of the yellow QDs in the emission layer, such that the QLED component can be decided to provide a cold white light, a pure white light or a warm white light. It can also control the white-light QLED component to optionally emit cold white light, pure white light or warm white light by modulating a bias voltage.Type: ApplicationFiled: July 2, 2020Publication date: October 14, 2021Inventor: HSUEH-SHIH CHEN
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Publication number: 20210320092Abstract: A method for making inkjet-printed encapsulated quantum dots and a light conversion unit using the inkjet-printed encapsulated quantum dots are disclosed. The light conversion unit comprises: a substrate, a light convertor carrying layer having several accommodating grooves, several first micro encapsulated QD structures, and several second micro encapsulated QD structures. In case of letting the substrate has a hydrophobic surface, at least one inkjet-printing nozzle is utilized for injecting a first QDs solution and a second QDs solution into the accommodating grooves by a form of droplet, such that one third of the accommodating grooves are formed with the first micro encapsulated QD structure, and another one third of the accommodating grooves formed with the second micro encapsulated QD structure. Moreover, a micro LED display panel having the light conversion unit exhibits a color gamut that is approximately 110% NTSC.Type: ApplicationFiled: July 2, 2020Publication date: October 14, 2021Inventor: HSUEH-SHIH CHEN
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Patent number: 11145636Abstract: A method for making inkjet-printed encapsulated quantum dots and a light conversion unit using the inkjet-printed encapsulated quantum dots are disclosed. The light conversion unit comprises: a substrate, a light convertor carrying layer having several accommodating grooves, several first micro encapsulated QD structures, and several second micro encapsulated QD structures. In case of letting the substrate has a hydrophobic surface, at least one inkjet-printing nozzle is utilized for injecting a first QDs solution and a second QDs solution into the accommodating grooves by a form of droplet, such that one third of the accommodating grooves are formed with the first micro encapsulated QD structure, and another one third of the accommodating grooves formed with the second micro encapsulated QD structure. Moreover, a micro LED display panel having the light conversion unit exhibits a color gamut that is approximately 110% NTSC.Type: GrantFiled: July 2, 2020Date of Patent: October 12, 2021Assignee: National Tsing Hua UniversityInventors: Hsueh-Shih Chen, Shih-Jung Ho
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Patent number: 10935694Abstract: Light scattering particles made of TiO2, BaSO4, SiO2, or Al2O3 have been used in a QD layer of a QD-LED for enhancing luminous intensity. However, the light scatters are found to decline the light conversion efficiency of the QD layer. In view of that, the present invention particularly discloses a light conversion material with high conversion efficiency for use in the QD-LED. The light conversion material mainly comprises a polymer matrix, a plurality of 3D photonic crystals dispersed in the polymer matrix, and a plurality of quantum dots dispersed in the polymer matrix, wherein each of the plurality of 3D photonic crystals is formed by applying a self-assembly process to a plurality of polymer beads. Moreover, a variety of experimental data have proved that, this light conversion material indeed exhibits outstanding photoluminescence intensity and light conversion efficiency both superior than that of the conventionally-used QD layer.Type: GrantFiled: June 23, 2018Date of Patent: March 2, 2021Inventors: Hsueh-Shih Chen, Shih-Jung Ho
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Patent number: 10896997Abstract: The present invention discloses a light-diffusion quantum dot nanostructure and an LED component having the same. The quantum dot nanostructure comprises an optical core, an organic ligand layer, a hydrophobic layer, an inorganic encapsulation layer, and a multi-layered water vapor barrier layer. In the present invention, the multi-layered water vapor barrier layer is particularly designed to an onion skin-like structure, so as to facilitate photoluminescence rays radiated from the optical core can emit out of the barrier layer via voids or pores of the onion skin-like structure, such that the uniformity of the spatial light output distribution of the LED component having the quantum dot nanostructures can be obviously enhanced. On the other hand, because the multi-layered water vapor barrier layer can also improve the dispersibility of the light-diffusion quantum dot nanostructures in a colloidal encapsulation of the LED component, the luminous intensity of the LED component is therefore increased.Type: GrantFiled: October 31, 2017Date of Patent: January 19, 2021Inventor: Hsueh-Shih Chen
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Patent number: 10781365Abstract: Differing from commercial solution of colloidal quantum dots being often composed of a non-polar organic solvent and a plurality of quantum dots, the present invention discloses a combination solution of colloidal quantum dots comprising a liquid monomer with low glass transition temperature and a plurality of quantum dot units, wherein the quantum dot unit comprises a polar carrier particle, a plurality of quantum dots and an enclosure layer with high glass transition temperature. It is worth explaining that, after applying an aging treatment to the combination solution of colloidal quantum dots and the commercial solution of colloidal quantum dots for 200 minutes, measurement data of UV-VIS spectrophotometer have proved that the combination solution of colloidal quantum dots provided by the present invention is 1.6 times as stable as the commercial solution of colloidal quantum dots.Type: GrantFiled: October 31, 2017Date of Patent: September 22, 2020Assignee: NATIONAL TSING HUA UNIVERSITYInventor: Hsueh-Shih Chen
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Patent number: 10713977Abstract: Disclosures of the present invention describe an anti-counterfeit security verification method and device using quantum dots, wherein the anti-counterfeit security verification device consists of a base, a plurality of receiving recesses formed on the base, and a plurality of optical members. After being illuminated by a short-wavelength light, the optical members irradiate a plurality of photoluminescent light, and each of the photoluminescent lights comprises at least one wavelength value, one (x, y) coordinate position, one value of integrated photoluminescence intensity area, one photoluminescence color, and one color scale value.Type: GrantFiled: January 3, 2019Date of Patent: July 14, 2020Assignee: National Tsing Hua UniversityInventor: Hsueh-Shih Chen
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Publication number: 20200202751Abstract: Disclosures of the present invention describe an anti-counterfeit security verification method and device using quantum dots, wherein the anti-counterfeit security verification device consists of a base, a plurality of receiving recesses formed on the base, and a plurality of optical members. After being illuminated by a short-wavelength light, the optical members irradiate a plurality of photoluminescent light, and each of the photoluminescent lights comprises at least one wavelength value, one (x, y) coordinate position, one value of integrated photoluminescence intensity area, one photoluminescence color, and one color scale value.Type: ApplicationFiled: January 3, 2019Publication date: June 25, 2020Inventor: Hsueh-Shih Chen
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Patent number: 10670231Abstract: The present invention discloses a light conversion material with light reflective structure, comprises: a transparent substrate, a plurality of first light conversion films and second light conversion films. Particularly, the second light conversion film is disposed between two of the first light conversion films, and has a refractive index greater than that of the first light conversion film. By such design, when a short-wavelength light is incident on the first light conversion films and the second light conversion films, parts of the short-wavelength light have a reflected light forming at the junction between the two light conversion films, and the reflected light would bounce back to the first light conversion film and/or the second light conversion film, thereby those unconverted short-wavelength light being prevented from directly passing the light conversion material. Briefly speaking, this light conversion material exhibits an outstanding performance on short-wavelength light recycling.Type: GrantFiled: May 31, 2018Date of Patent: June 2, 2020Assignee: National Tsing Hua UniversityInventor: Hsueh-Shih Chen