Patents by Inventor Hsueh-Shih Chen
Hsueh-Shih Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9890329Abstract: A quantum dot nanocrystal structure includes: a core of a compound M1A1, wherein M1 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from Se, S, Te, P, As, N, I, and O; an inner shell having a composition containing a compound M1xM21-xA1yA21-y, wherein M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is an element selected from Se, S, Te, P, As, N, I and O; and a multi-pod-structured outer shell of a compound M1A2 or M2A2 enclosing the inner shell and having a base portion and protrusion portions extending from the base portion.Type: GrantFiled: May 14, 2015Date of Patent: February 13, 2018Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Hsueh-Shih Chen, Guan-Hong Chen, Kai-Cheng Wang, Chang-Wei Yeh, Cheng-Wei Chang, Ching-Che Hung
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Publication number: 20170365729Abstract: A nanowire composite structure is provided. The nanowire composite structure includes a nanowire core, wherein a material of the nanowire core includes Se, Te or a combination thereof. The nanowire composite structure also includes a metal layer covering the nanowire core. A method for forming the nanowire composite structure, a protective structure of a nanowire, a sensing device, and a method for forming a sensing device are also provided.Type: ApplicationFiled: June 16, 2017Publication date: December 21, 2017Inventors: Hsueh-Shih Chen, Pin-Ru Chen
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Publication number: 20160369975Abstract: A quantum dot-containing wavelength converter includes a matrix layer and quantum dots dispersed in the matrix layer. Each of the quantum clots includes a core of a compound M1A1, an inner shell, and a multi-pod-structured outer shell of a compound M1A2 or M2A2. Each of M1 and M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and each of A1 and A2 is an element selected from Se, S, Te, P, As, N, I, and O. The inner shell contains a compound M1xM21-xAlyA21-y, wherein M2 is different from M1 and A2 is different from A1. The multi-pod-structured outer shell has a base portion and protrusion portions that extend from the base portion in a direction away from the inner shell.Type: ApplicationFiled: June 22, 2015Publication date: December 22, 2016Applicant: National Tsing Hua UniversityInventors: Hsueh-Shih CHEN, Shih-Jung HO, Guan-Hong CHEN, Ming-Hua YEH
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Publication number: 20160333267Abstract: A quantum dot nanocrystal structure includes: a core of a compound M1A1, wherein M1 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from Se, S, Te, P, As, N, I, and O; an inner shell having a composition containing a compound M1xM21-xA1yA21-y, wherein M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is an element selected from Se, S, Te, P, As, N, I and O; and a multi-pod-structured outer shell of a compound M1A2 or M2A2 enclosing the inner shell and having a base portion and protrusion portions extending from the base portion.Type: ApplicationFiled: May 14, 2015Publication date: November 17, 2016Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Hsueh-Shih CHEN, Guan-Hong CHEN, Kai-Cheng WANG, Chang-Wei YEH, Cheng-Wei CHANG, Ching-Che HUNG
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Publication number: 20160075884Abstract: An inorganic-organic hybrid oxide polymer is provided. The polymer consists of an inorganic molecular cluster MxNyOz and an organic molecular polymer cluster OG, wherein the inorganic molecular cluster MxNyOz consists of a hybrid oxidation based on a first element M and a second element N and has a molecular formula MxNyOz , wherein x=0.01˜0.99, y=0.01˜0.99, z/(x+y)=0.01˜3.99, and the inorganic molecular cluster MxNyOz has a plurality of voids having an averaged characteristic dimension in a range between 0.2 nm˜30 nm and filled with the organic molecular polymer cluster OG, wherein the first element M and the second element N are respectively selected from a group consisting of an intermediate element, a metal element, a semiconductor element and a combination thereof and the first element M is different from the second element N.Type: ApplicationFiled: February 10, 2015Publication date: March 17, 2016Applicant: NATIONAL TSING HUA UNIVERSITYInventor: Hsueh-Shih CHEN
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Publication number: 20160067697Abstract: The present invention relates to a nanoporous thin film and a method for fabricating the same. The nanoporous thin film fabricating method for fabricating a nanoporous thin film with a composite photocatalyst structure for a photodegradation and a water purification includes providing a porous substrate with a plurality of through-nanopores therein, each of which through-nanopores have an inner tube wall; forming an oxide-based photocatalyst layer over the porous substrate and the inner tube wall by using a first chemical-based deposition process; and forming a metal-based photocatalyst layer on a part of the oxide-based photocatalyst layer by using a second chemical-based deposition process.Type: ApplicationFiled: August 27, 2015Publication date: March 10, 2016Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Tsong-Pyng Perng, Hsueh-Shih Chen, Chung-Yi Su, Po-Hsun Chen
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Patent number: 8940244Abstract: The present invention relates to hierarchical structured nanotubes, to a method for preparing the same and to an application for the same, wherein the nanotubes include a plurality of connecting nanotubes for constituting a three-dimensional multi-dendrite morphology; and the method includes the following steps: (A) providing a polymer template including a plurality of organic nanowires; (B) forming an inorganic layer on the surface of the organic nanowires in the polymer template; and (C) performing a heat treatment on the polymer template having the inorganic layer on the surface so that partial atoms of the organic nanowires enter the inorganic layer.Type: GrantFiled: December 17, 2012Date of Patent: January 27, 2015Assignee: National Tsing Hua UniversityInventors: Hsueh-Shih Chen, Po-Hsun Chen, Jeng Liang Kuo, Tsong-Pyng Perng
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Patent number: 7935388Abstract: A method for manufacturing a quantum-dot element utilizes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on a substrate. A substrate-supporting base is located inside the reaction chamber for fixing the substrate. An atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The method for manufacturing a quantum-dot element forms a quantum dot layer with uniformly distributed quantum dots and integrates the processes for forming the quantum-dot layer, the buffer layer, and the electrode layer together in the same chamber.Type: GrantFiled: June 30, 2009Date of Patent: May 3, 2011Assignee: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Dai-Luon Lo, Gwo-Yang Chang, Chien-Ming Chen
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Publication number: 20090263580Abstract: An apparatus for manufacturing a quantum-dot element is disclosed. The apparatus includes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on the substrate. The substrate-supporting base is located inside the reaction chamber for fixing the substrate. The atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The apparatus of the present invention can form a quantum dot layer with uniformly distributed quantum dots and integrate the processes for forming a quantum-dot layer, a buffer layer, and an electrode layer together at the same chamber. Therefore, the quality of produced element can be substantially improved.Type: ApplicationFiled: June 30, 2009Publication date: October 22, 2009Applicant: Industrial Technology Research InstituteInventors: Hsueh-Shih CHEN, Dai-Luon Lo, Gwo-Yang Chang, Chien-Ming Chen
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Patent number: 7566435Abstract: A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.Type: GrantFiled: August 22, 2006Date of Patent: July 28, 2009Assignee: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Shu-Ru Chung, Gwo-Yang Chang, Shih-Jung Tsai
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Patent number: 7507599Abstract: A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.Type: GrantFiled: December 9, 2004Date of Patent: March 24, 2009Assignee: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Gwo-Yang Chang, Chien-Ming Chen
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Publication number: 20090074653Abstract: A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.Type: ApplicationFiled: December 9, 2004Publication date: March 19, 2009Inventors: Hsueh-Shih Chen, Gwo-Yang Chang, Chien-Ming Chen
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Patent number: 7342260Abstract: A light emitting diode. The light emitting diode comprises a lead frame and an LED chip therein. Packaging material in the lead frame is covers the LED chip. A plurality of ZnX quantum dots dispersed in the packaging material, wherein X is S, Se, Te or a combination thereof. A plurality of organic molecules covers each ZnX quantum dot.Type: GrantFiled: December 23, 2004Date of Patent: March 11, 2008Assignee: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Gwo-Yang Chang, Chien-Ming Chen, Jun-Ren Lo, Shyh-Yang Lee
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Patent number: 7303937Abstract: A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.Type: GrantFiled: July 25, 2005Date of Patent: December 4, 2007Assignee: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Dai-Luon Lo, Gwo-Yang Chang, Chien-Ming Chen
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Publication number: 20070151597Abstract: A nanocrystal with high light absorption efficiency and a broad absorption spectrum, and a photovoltaic device comprising the nanocrystal are disclosed. The nanocrystal of the present invention comprises a core, a first shell grown and formed on the surface of the core, and a second shell grown and formed on the surface of the core or the surface of the first shell. Besides, the core, the first shell, and the second shell are a low energy gap material, a middle energy gap material, and a high energy gap material, respectively. Therefore, the nanocrystal has a great absorption in the ultraviolet range, the visible light range, and the infrared range; and the solar spectrum can be converted effectively to improve the light conversion efficiency thereof.Type: ApplicationFiled: September 5, 2006Publication date: July 5, 2007Applicant: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Shu-Ru Chung, Gwo-Yang Chang, Shih-Jung Tsai
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Publication number: 20070155173Abstract: A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.Type: ApplicationFiled: August 22, 2006Publication date: July 5, 2007Applicant: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Shu-Ru Chung, Gwo-Yang Chang, Shih-Jung Tsai
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Patent number: 7192850Abstract: A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II–VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.Type: GrantFiled: December 30, 2004Date of Patent: March 20, 2007Assignee: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Dai-Luon Lo, Chien-Ming Chen, Gwo-Yang Chang
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Publication number: 20060289853Abstract: An apparatus for manufacturing a quantum-dot element is disclosed. The apparatus includes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on the substrate. The substrate-supporting base is located inside the reaction chamber for fixing the substrate. The atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The apparatus of the present invention can form a quantum dot layer with uniformly distributed quantum dots and integrate the processes for forming a quantum-dot layer, a buffer layer, and an electrode layer together at the same chamber. Therefore, the quality of produced element can be substantially improved.Type: ApplicationFiled: July 25, 2005Publication date: December 28, 2006Applicant: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Dai-Luon Lo, Gwo-Yang Chang, Chien-Ming Chen
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Publication number: 20060046330Abstract: A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.Type: ApplicationFiled: July 25, 2005Publication date: March 2, 2006Applicant: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Dai-Luon Lo, Gwo-Yang Chang, Chien-Ming Chen
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Publication number: 20050287691Abstract: A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II-VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.Type: ApplicationFiled: December 30, 2004Publication date: December 29, 2005Applicant: Industrial Technology Research InstituteInventors: Hsueh-Shih Chen, Dai-Luon Lo, Chien-Ming Chen, Gwo-Yang Chang