Patents by Inventor Hu Kang
Hu Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10665429Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.Type: GrantFiled: September 13, 2017Date of Patent: May 26, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Hu Kang, Adrien LaVoie, Shankar Swaminathan, Jun Qian, Chloe Baldasseroni, Frank Pasquale, Andrew Duvall, Ted Minshall, Jennifer Petraglia, Karl Leeser, David Smith, Sesha Varadarajan, Edward Augustyniak, Douglas Keil
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Publication number: 20200152446Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: ApplicationFiled: January 10, 2020Publication date: May 14, 2020Inventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Publication number: 20200087786Abstract: Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.Type: ApplicationFiled: November 21, 2019Publication date: March 19, 2020Inventors: Purushottam Kumar, Adrien LaVoie, Hu Kang, Jun Qian, Tuan Nguyen, Ye Wang
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Patent number: 10577688Abstract: A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate and supplying a first power level sufficient to promote rearrangement of molecules adsorbed from the reactant gases onto a surface of the substrate. The first power level is supplied in a first predetermined period where the reactant gases are flowing into the process chamber and a second power level is not supplied to the process chamber. The method further includes waiting a second predetermined period subsequent to flowing the reactant gases and supplying the first power level and prior to supplying the second power level to the process chamber and, after the second predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying the second power level to the process chamber for a third predetermined period.Type: GrantFiled: August 3, 2017Date of Patent: March 3, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Adrien LaVoie, Hu Kang, Karl Leeser
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Patent number: 10577691Abstract: Disclosed are methods of depositing films of material on multiple semiconductor substrates in a multi-station processing chamber. The methods may include loading a first set of one or more substrates into the processing chamber at a first set of one or more process stations and depositing film material onto the first set of substrates by performing N cycles of film deposition. Thereafter, the methods may further include transferring the first set of substrates from the first set of process stations to a second set of one or more process stations, loading a second set of one or more substrates at the first set of process stations, and depositing film material onto the first and second sets of substrates by performing N? cycles of film deposition, wherein N? is not equal to N. Also disclosed are apparatuses and computer-readable media which may be used to perform similar operations.Type: GrantFiled: September 13, 2017Date of Patent: March 3, 2020Assignee: Lam Research CorporationInventors: Romuald Nowak, Hu Kang, Adrien LaVoie, Jun Qian
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Patent number: 10566187Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: GrantFiled: March 20, 2015Date of Patent: February 18, 2020Assignee: Lam Research CorporationInventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Patent number: 10526700Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.Type: GrantFiled: September 13, 2018Date of Patent: January 7, 2020Assignee: Lam Research CorporationInventors: Purushottam Kumar, Hu Kang, Adrien LaVoie, Yi Chung Chiu, Frank L. Pasquale, Jun Qian, Chloe Baldasseroni, Shankar Swaminathan, Karl F. Leeser, David Charles Smith, Wei-Chih Lai
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Patent number: 10526701Abstract: Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.Type: GrantFiled: July 30, 2015Date of Patent: January 7, 2020Assignee: Lam Research CorporationInventors: Purushottam Kumar, Adrien LaVoie, Hu Kang, Jun Qian, Tuan Nguyen, Ye Wang
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Publication number: 20190378710Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: ApplicationFiled: June 28, 2019Publication date: December 12, 2019Inventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Publication number: 20190311897Abstract: Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.Type: ApplicationFiled: May 31, 2019Publication date: October 10, 2019Inventors: Hu Kang, Shankar Swaminathan, Jun Qian, Wanki Kim, Dennis M. Hausmann, Bart J. van Schravendijk, Adrien LaVoie
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Patent number: 10407773Abstract: Disclosed are methods of depositing films of material on semiconductor substrates employing the use of a secondary purge. The methods may include flowing a film precursor into a processing chamber and adsorbing the film precursor onto a substrate in the processing chamber such that the precursor forms an adsorption-limited layer on the substrate. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed precursor by purging the processing chamber with a primary purge gas, and thereafter reacting adsorbed film precursor while a secondary purge gas is flowed into the processing chamber, resulting in the formation of a film layer on the substrate. The secondary purge gas may include a chemical species having an ionization energy and/or a disassociation energy equal to or greater than that of O2. Also disclosed are apparatuses which implement the foregoing processes.Type: GrantFiled: February 28, 2017Date of Patent: September 10, 2019Assignee: Lam Research CorporationInventors: Adrien LaVoie, Hu Kang, Purushottam Kumar, Shankar Swaminathan, Jun Qian, Frank L. Pasquale, Chloe Baldasseroni
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Patent number: 10378107Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.Type: GrantFiled: September 10, 2015Date of Patent: August 13, 2019Assignee: Lam Research CorporationInventors: Ramesh Chandrasekharan, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Hu Kang, Adrien LaVoie, Edward Augustyniak, Yukinori Sakiyama, Chloe Baldasseroni, Seshasayee Varadarajan, Basha Sajjad, Jennifer L. Petraglia
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Patent number: 10361076Abstract: Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.Type: GrantFiled: July 19, 2017Date of Patent: July 23, 2019Assignee: Lam Research CorporationInventors: Hu Kang, Shankar Swaminathan, Jun Qian, Wanki Kim, Dennis Hausmann, Bart J. van Schravendijk, Adrien LaVoie
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Publication number: 20190040528Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.Type: ApplicationFiled: September 13, 2018Publication date: February 7, 2019Inventors: Purushottam Kumar, Hu Kang, Adrien LaVoie, Yi Chung Chiu, Frank L. Pasquale, Jun Qian, Chloe Baldasseroni, Shankar Swaminathan, Karl F. Leeser, David Charles Smith, Wei-Chih Lai
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Publication number: 20190024233Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.Type: ApplicationFiled: September 20, 2018Publication date: January 24, 2019Inventors: Purushottam Kumar, Adrien LaVoie, Jun Qian, Hu Kang, Ishtak Karim, Fung Suong Ou
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Patent number: 10100407Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.Type: GrantFiled: December 19, 2014Date of Patent: October 16, 2018Assignee: Lam Research CorporationInventors: Purushottam Kumar, Hu Kang, Adrien LaVoie, Yi Chung Chiu, Frank L. Pasquale, Jun Qian, Chloe Baldasseroni, Shankar Swaminathan, Karl F. Leeser, David Charles Smith, Wei-Chih Lai
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Patent number: 10094018Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.Type: GrantFiled: October 30, 2015Date of Patent: October 9, 2018Assignee: Lam Research CorporationInventors: Purushottam Kumar, Adrien LaVoie, Jun Qian, Hu Kang, Ishtak Karim, Fung Suong Ou
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Publication number: 20180247875Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.Type: ApplicationFiled: April 27, 2018Publication date: August 30, 2018Inventors: Hu Kang, Shankar Swaminathan, Adrien LaVoie, Jon Henri
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Patent number: 10008428Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.Type: GrantFiled: July 14, 2017Date of Patent: June 26, 2018Assignee: Novellus Systems, Inc.Inventors: Hu Kang, Shankar Swaminathan, Adrien LaVoie, Jon Henri
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Patent number: 9970108Abstract: A vapor delivery system includes an ampoule to store liquid precursor and a heater to partially vaporize the liquid precursor. A first valve communicates with a push gas source and the ampoule. A second valve supplies vaporized precursor to a heated injection manifold. A valve manifold includes a first node in fluid communication with an outlet of the heated injection manifold, a third valve having an inlet in fluid communication with the first node and an outlet in fluid communication with vacuum, a fourth valve having an inlet in fluid communication with the first node and an outlet in fluid communication with a second node, a fifth valve having an outlet in fluid communication with the second node, and a sixth valve having an outlet in fluid communication with the second node. A gas distribution device is in fluid communication with the second node.Type: GrantFiled: July 14, 2015Date of Patent: May 15, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Jun Qian, Hu Kang, Purushottam Kumar, Chloe Baldasseroni, Heather Landis, Andrew Kenichi Duvall, Mohamed Sabri, Ramesh Chandrasekharan, Karl Leeser, Shankar Swaminathan, David Smith, Jeremiah Baldwin, Eashwar Ranganathan, Adrien LaVoie, Frank Pasquale, Jeongseok Ha, Ingi Bae