Patents by Inventor Hu YOUCUN

Hu YOUCUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and method for forming a semiconductor structure
    Patent number: 10998396
    Abstract: A semiconductor structure and a forming method thereof are disclosed. The forming method includes: providing a base; forming a first electrode layer on the base; forming a capacitance dielectric layer on a top and a sidewall of the first electrode layer; and forming a second electrode layer conformally covering the capacitance dielectric layer. Compared with a solution in which the capacitance dielectric layer only covers the top of the first electrode layer, in the present disclosure, an effective area between the second electrode layer and the first electrode layer is increased, the second electrode layer, the first electrode layer, and the capacitance dielectric layer located on the top of the first electrode layer construct one capacitance, and the second electrode layer, the first electrode layer, and the capacitance dielectric layer located on the sidewall of the first electrode layer construct other four capacitances. That is, the formed capacitor structure includes five parallel capacitances.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: May 4, 2021
    Assignees: Semiconductor Manufacturing (Beijing) international Corporation, Semiconductor Manufacturing (Shanghai) International Corporation
    Inventors: Hu Lianfeng, Hu Youcun, Yang Ming, Bei Duohui, Ni Baibing
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE
    Publication number: 20200168699
    Abstract: A semiconductor structure and a forming method thereof are disclosed. The forming method includes: providing a base; forming a first electrode layer on the base; forming a capacitance dielectric layer on a top and a sidewall of the first electrode layer; and forming a second electrode layer conformally covering the capacitance dielectric layer. Compared with a solution in which the capacitance dielectric layer only covers the top of the first electrode layer, in the present disclosure, an effective area between the second electrode layer and the first electrode layer is increased, the second electrode layer, the first electrode layer, and the capacitance dielectric layer located on the top of the first electrode layer construct one capacitance, and the second electrode layer, the first electrode layer, and the capacitance dielectric layer located on the sidewall of the first electrode layer construct other four capacitances. That is, the formed capacitor structure includes five parallel capacitances.
    Type: Application
    Filed: August 9, 2019
    Publication date: May 28, 2020
    Applicants: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Hu LIANFENG, Hu YOUCUN, YANG MING, Bei DUOHUI, Ni Baibing LING