Abstract: A method is presented forming a fully-aligned via (FAV) and airgaps within a semiconductor device. The method includes forming a plurality of copper (Cu) trenches within an insulating layer, forming a plurality of ILD regions over exposed portions of the insulating layer, selectively removing a first section of the ILD regions in an airgap region, and maintaining a second section of the ILD regions in a non-airgap region. The method further includes forming airgaps in the airgap region and forming a via in the non-airgap region contacting a Cu trench of the plurality of Cu trenches.

Abstract: Techniques for forming trapezoidal-shaped interconnects are provided. In one aspect, a method for forming an interconnect structure includes: patterning a trench(es) in a dielectric having a V-shaped profile with a rounded bottom; depositing a liner into the trench(es) using PVD which opens-up the trench(es) creating a trapezoidal-shaped profile in the trench(es); removing the liner from the trench(es) selective to the dielectric whereby, following the removing, the trench(es) having the trapezoidal-shaped profile remains in the dielectric; depositing a conformal barrier layer into and lining the trench(es) having the trapezoidal-shaped profile; depositing a conductor into and filling the trench(es) having the trapezoidal-shaped profile over the conformal barrier layer; and polishing the conductor and the conformal barrier layer down to the dielectric. An interconnect structure is also provided.

Abstract: Systems and techniques associated light detection and ranging (LIDAR) applications are described. In one representative aspect, techniques can be used to implement a packaged semi-conductive apparatus is disclosed. The apparatus includes a substrate; a diode die carried by the substrate and positioned to emit an electromagnetic energy beam; and a shell coupled to the substrate to enclose the diode die. The shell includes an opening or a transparent area to allow the electromagnetic energy beam emitted from the diode die to pass through the shell.

Abstract: A method for manufacturing a semiconductor device includes forming a plurality of trenches in a dielectric layer, wherein the plurality of trenches each comprise a rounded surface, depositing a liner layer on the rounded surface of each of plurality of trenches, and depositing a conductive layer on the liner layer in each of the plurality of trenches, wherein the conductive layer and the liner layer form a plurality of interconnects, and each of the plurality of interconnects has a cylindrical shape.

Abstract: The present invention discloses a receptor inhibitor of formula (I), a pharmaceutical composition comprising the same and the use thereof.

Abstract: Systems and techniques associated light detection and ranging (LIDAR) applications are described. In one representative aspect, techniques can be used to implement a sensor device. The sensor device includes an electromagnetic energy emitter module positioned to emit an electromagnetic energy beam directed to one or more objects, a beam steering module positioned to receive at least a portion of the electromagnetic energy beam that is reflected from the one or more objects, and an array of receiver units positioned to convert the portion of the electromagnetic energy beam into multiple electrical signals. The beam steering module is further positioned to direct the portion of the electromagnetic energy beam to the array of receiver units, with individual receiver units positioned to detect multiple optical signals from the portion of the electromagnetic energy beam and convert the multiple optical signals into electrical signals.

Abstract: This application discloses distance detection apparatuses. The distance detection apparatus includes a light source, a transmitting and receiving lens, a detector, and an optical path change element. The light source is to emit a beam. The transmitting and receiving lens is to collimate the beam emitted by the light source, and converge at least a part of return light of the beam reflected by a to-be-detected object. The detector is placed with the light source on a same side of the transmitting and receiving lens, to convert at least a part of return light that passes through the transmitting and receiving lens into an electrical signal. The optical path change element is to change an optical path of the beam emitted by the light source or the return light that passes through the transmitting and receiving lens.

Abstract: Systems, apparatuses and methods for indicating a moveable device such as an unmanned aerial vehicle (UAV) are disclosed herein. The present technology provides an illumination system having a light source and an illuminating component. In a representative embodiment, the light source is carried by a UAV and positioned to emit a light ray in a first direction. The illuminating component is carried by a propeller of the UAV. The illuminating component can include a light entrance portion, a light transmission portion, and a light exit portion. The light entrance portion is positioned to receive the light ray from the light source, the light transmission portion is positioned to transmit the light ray to the light exit portion, and the light exit portion is positioned to direct the light ray in a second direction so as to form a visual indication corresponding to the UAV.

Abstract: A method for manufacturing a semiconductor device includes forming a first vertical transistor structure in a first device region on a substrate, and forming a second vertical transistor structure in a second device region on the substrate. The first vertical transistor structure includes a first plurality of fins, and the second vertical transistor structure includes a second plurality of fins. A plurality of first source/drain regions are grown from upper portions of the first plurality of fins, and a contact liner layer is formed on the first source/drain regions. The method further includes forming a plurality of first silicide portions from the contact liner layer on the first source/drain regions, and forming a plurality of second silicide portions on a plurality of second source/drain regions extending from upper portions of the second plurality of fins. The second silicide portions have a different composition than the first silicide portions.

Abstract: A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.

Abstract: A method is presented forming a fully-aligned via (FAV) and airgaps within a semiconductor device. The method includes forming a plurality of copper (Cu) trenches within an insulating layer, forming a plurality of ILD regions over exposed portions of the insulating layer, selectively removing a first section of the ILD regions in an airgap region, and maintaining a second section of the ILD regions in a non-airgap region. The method further includes forming airgaps in the airgap region and forming a via in the non-airgap region contacting a Cu trench of the plurality of Cu trenches.

Abstract: The present disclosure provides a ranging system. The system includes a first transmitter configured to emit a first optical signal to an object; a receiver corresponding to the first transmitter, configured to receive a reflected signal corresponding to the first optical signal; a second transmitter configured to emit a second optical signal to the object; a receiver corresponding to the second transmitter, configured to receive a reflected signal corresponding to the second optical signal; a controller configured to control the first transmitter to emit the first optical signal and the second transmitter to emit the second optical signal; and a measuring device configured to acquire indication information based on the received reflected signal corresponding to the first optical signal and the reflected signal corresponding to the second optical signal, and to determine a distance of the object based on the indication information.

Abstract: A sensor system includes an optical aperture, a light source configured to generate a light pulse along a first optical path, a reflective surface configured to reflect the light pulse from the first optical path to a second optical path for passing through the optical aperture, a beam steering device positioned in the optical aperture and configured to steer the light pulse along different directions to one or more objects in an angle of view of the sensor system, a detector configured to receive a reflected light pulse and convert the reflected light pulse into an electrical signal, the reflected light pulse being reflected back from the one or more objects and passed through the beam steer device, and a spatial filtering device positioned between the beam steering device and the detector to block undesirable light in both the light pulse and the reflected light pulse.

Abstract: Techniques are provided to fabricate semiconductor devices. For example, a semiconductor device can include an alternating arrangement of vertical metallic lines defining openings therebetween on a substrate. An interlevel dielectric layer is disposed on a consecutive first opening and a second opening to seal an air gap between a top surface of the substrate and a bottom surface of the interlevel dielectric layer.

Abstract: A method for manufacturing a semiconductor device includes forming a plurality of trenches in a dielectric layer, wherein the plurality of trenches each comprise a rounded surface, depositing a liner layer on the rounded surface of each of plurality of trenches, and depositing a conductive layer on the liner layer in each of the plurality of trenches, wherein the conductive layer and the liner layer form a plurality of interconnects, and each of the plurality of interconnects has a cylindrical shape.

Abstract: A conductive line structure comprises a first conductive line arranged in a first dielectric layer, a second conductive line arranged in the first dielectric layer, a cap layer arranged on the first conductive line and the second conductive line, and an airgap arranged between the first conductive line and the second conductive line, the airgap defined by the first dielectric layer and the cap layer.

Abstract: Techniques are provided to fabricate semiconductor devices. For example, a semiconductor device can include a substrate including a central portion and a pair of outer portions. A first self-assembled monolayer is attached to the central portion of the substrate. A second self-assembled monolayer is attached to the first self-assembled monolayer. A first dielectric layer is disposed on each of the outer portions. A second dielectric layer is disposed on the first dielectric layer.

Abstract: Techniques are provided to fabricate semiconductor devices. For example, a semiconductor device can include an alternating arrangement of vertical metallic lines defining openings therebetween on a substrate. An interlevel dielectric layer is disposed on a consecutive first opening and a second opening to seal an air gap between a top surface of the substrate and a bottom surface of the interlevel dielectric layer.

Abstract: The present invention provides interconnects with self-forming wrap-all-around graphene barrier layer. In one aspect, a method of forming an interconnect structure is provided. The method includes: patterning at least one trench in a dielectric; forming an interconnect in the at least one trench embedded in the dielectric; and forming a wrap-all-around graphene barrier surrounding the interconnect. An interconnect structure having a wrap-all-around graphene barrier is also provided.

Abstract: A sensor system can comprise a light source generating a light pulse that is collimated, and a plurality of optical elements. Each of the plurality of optical elements is configured to rotate independently about an axis that is substantially common, and the plurality of optical elements operate to collectively direct the light pulse to one or more objects in an angle of view of the sensor system. Furthermore, the sensor system can comprise a detector configured to receive, via the plurality of optical elements, at least a portion of photon energy of the light pulse that is reflected back from the one or more objects in the angle of view of the sensor system, and convert the received photon energy into at least one electrical signal.