Patents by Inventor Huatan Qiu

Huatan Qiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190185999
    Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.
    Type: Application
    Filed: April 16, 2018
    Publication date: June 20, 2019
    Inventors: Damodar Shanbhag, Guangbi Yuan, Thadeous Bamford, Curtis Warren Bailey, Tony Kaushal, Krishna Birru, William Schlosser, Bo Gong, Huatan Qiu, Fengyuan Lai, Leonard Wai Fung Kho, Anand Chandrashekar, Andrew H. Breninger, Chen-Hua Hsu, Geoffrey Hohn, Gang Liu, Rohit Khare
  • Publication number: 20180251893
    Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.
    Type: Application
    Filed: March 3, 2017
    Publication date: September 6, 2018
    Inventors: Geoffrey Hohn, Huatan Qiu, Rachel Batzer, Guangbi Yuan, Zhe Gui
  • Publication number: 20180233326
    Abstract: A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. A pedestal with a support for the substrate is disposed in the lower chamber portion and oriented below the showerhead, such that a processing region is defined between the support of the pedestal and the showerhead. A spacer is disposed between the showerhead and the lower chamber wall of the lower chamber portion. The spacer is defined by an annular body that includes a vertical component. The annular body also includes a side extension that is disposed outside of the processing region and projects radially away from the vertical component. The annular body includes a groove that is formed in the side extension so as to surround the vertical component of the annular body. A heating element is embedded in the groove of the side extension.
    Type: Application
    Filed: February 14, 2017
    Publication date: August 16, 2018
    Inventors: Taide Tan, Huatan Qiu, Ryan Senff
  • Publication number: 20180163305
    Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
    Type: Application
    Filed: December 14, 2016
    Publication date: June 14, 2018
    Inventors: Rachel Batzer, Huatan Qiu, Bhadri Varadarajan, Patrick Girard Breiling, Bo Gong, Will Schlosser, Zhe Gui, Taide Tan, Geoffrey Hohn
  • Publication number: 20180044791
    Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates.
    Type: Application
    Filed: October 26, 2017
    Publication date: February 15, 2018
    Inventors: Bhadri N. Varadarajan, Bo Gong, Rachel E. Batzer, Huatan Qiu, Bart J. van Schravendijk, Geoffrey Hohn
  • Patent number: 9828672
    Abstract: Methods and apparatus for remote plasma processing are provided. In various embodiments, a reaction chamber is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs within the reaction chamber when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: November 28, 2017
    Assignee: Lam Research Corporation
    Inventors: Bhadri N. Varadarajan, Bo Gong, Rachel E. Batzer, Huatan Qiu, Bart J. van Schravendijk, Geoffrey Hohn
  • Patent number: 9591738
    Abstract: Systems and methods of forming plasma are provided. In an embodiment, a plasma generator system is provided including a container, a single coil disposed around the container, the single coil being a single member and having a first end, a second end, a first winding, and a second winding, wherein the first winding extends from the first end, and the second winding is integrally formed as part of the first winding and extends to the second end, an energy source electrically coupled directly to the first end of the single member, and a capacitor electrically coupled directly to the second end of the single member.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: March 7, 2017
    Assignee: Novellus Systems, Inc.
    Inventors: Huatan Qiu, David Cheung, Prashanth Kothnur
  • Publication number: 20160281230
    Abstract: Certain embodiments herein relate to methods of conditioning a reaction chamber that is used for remote plasma processing. Other embodiments herein relate to apparatus used for remote plasma processing. In various embodiments, a reaction chamber is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs within the reaction chamber when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating.
    Type: Application
    Filed: May 14, 2015
    Publication date: September 29, 2016
    Inventors: Bhadri N. Varadarajan, Bo Gong, Rachel E. Batzer, Huatan Qiu, Bart J. van Schravendijk, Geoffrey Hohn
  • Patent number: 9209000
    Abstract: Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.
    Type: Grant
    Filed: January 3, 2012
    Date of Patent: December 8, 2015
    Assignee: Novellus Systems, Inc.
    Inventors: Huatan Qiu, Woody Chung, Anirban Guha, David Cheung
  • Patent number: 9194045
    Abstract: Methods of processing a substrate include supplying process gas to a processing chamber including the substrate. Plasma is created in the processing chamber. After performing a first substrate processing step, the plasma is maintained in the processing chamber and at least one operating parameter is adjusted. The operating parameters may include RF bias to a pedestal, a plasma voltage bias, a gas admixture, a gas flow, a gas pressure, an etch to deposition (E/D) ratio and/or combinations thereof. One or more additional substrate processing steps are performed without an interruption in the plasma between the first substrate processing step and the one or more additional substrate processing steps.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: November 24, 2015
    Assignee: Novellus Systems, Inc.
    Inventors: Liqi Wu, Huatan Qiu, Yung Yi Lee
  • Publication number: 20140127912
    Abstract: Plasma deposition in which properties of a discharge plasma are controlled by modifying the grounding path of the plasma is potentially applicable in any plasma deposition environment, but finds particular use in ionized physical vapor deposition (iPVD) gapfill applications. Plasma flux ion energy and E/D ratio can be controlled by modifying the grounding path (grounding surface's location, shape and/or area). Control of plasma properties in this way can reduce or eliminate reliance on conventional costly and complicated RF systems for plasma control. For a high density plasma source, the ionization fraction and ion energy can be high enough that self-sputtering may occur even without any RF bias. And unlike RF induced sputtering, self-sputtering has narrow ion energy distribution, which provides better process controllability and larger process window for integration.
    Type: Application
    Filed: November 8, 2012
    Publication date: May 8, 2014
    Inventors: Liqi Wu, Ishtak Karim, Huatan Qiu
  • Publication number: 20130260057
    Abstract: Systems and methods include supplying process gas to a processing chamber including a substrate. Plasma is created in the processing chamber. After performing a first substrate processing step, the plasma is maintained in the processing chamber and at least one operating parameter is adjusted. The operating parameters may include RF bias to a pedestal, a plasma voltage bias, a gas admixture, a gas flow, a gas pressure, an etch to deposition (E/D) ratio and/or combinations thereof. One or more additional substrate processing steps are performed without an interruption in the plasma between the first substrate processing step and the one or more additional substrate processing steps.
    Type: Application
    Filed: April 1, 2013
    Publication date: October 3, 2013
    Applicant: Novellus Systems, Inc.
    Inventors: Liqi Wu, Huatan Qiu, Yung Yi Lee
  • Patent number: 8431033
    Abstract: A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: April 30, 2013
    Assignee: Novellus Systems, Inc.
    Inventors: Chunming Zhou, Liqi Wu, Karthik Colinjivadi, Emery Kuo, Huatan Qiu, KieJin Park
  • Patent number: 8273259
    Abstract: Ashing of organic material is conducted initially at a low temperature and then at a high temperature. A low flow rate of ashing gas maximizes ashing rate at the low temperature, and a high flow rate of ashing gas maximizes ashing rate at a high temperature. Preferably, a crossover temperature of a particular organic material in a given ashing system is determined, the crossover temperature characterized in that below the crossover temperature, a decrease in ashing gas flow rate results in an increase of ashing rate, and above the crossover temperature, an increase in ashing gas flow rate results in an increase of ashing rate.
    Type: Grant
    Filed: January 17, 2009
    Date of Patent: September 25, 2012
    Assignee: Novellus Systems, Inc.
    Inventors: Huatan Qiu, David Wingto Cheung
  • Publication number: 20120228125
    Abstract: A physical vapor deposition (PVD) system includes N coaxial coils arranged in a first plane parallel to a substrate-supporting surface of a pedestal in a chamber of a PVD system and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. Plasma is created in the chamber. A magnetic field well is created above a substrate by supplying N currents to the N coaxial coils, respectively, and M currents to the M coaxial coils, respectively. The N currents flow in a first direction in the N coaxial coils and the M second currents flow in a second direction in the M coaxial coils that is opposite to the first direction. A recessed feature on the substrate arranged on the pedestal is filled with a metal-containing material by PVD using at least one operation with high density plasma having a fractional ionization of metal greater than 30%.
    Type: Application
    Filed: March 21, 2012
    Publication date: September 13, 2012
    Inventors: Liqi Wu, Ishtak Karim, Huatan Qiu, Kie-Jin Park, Chunming Zhou, Karthik Colinjivadi
  • Publication number: 20120152896
    Abstract: A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.
    Type: Application
    Filed: December 21, 2010
    Publication date: June 21, 2012
    Inventors: Chunming Zhou, Liqi Wu, Karthik Colinjivadi, Emery Kuo, Huatan Qiu, KieJin Park
  • Publication number: 20120097331
    Abstract: Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.
    Type: Application
    Filed: January 3, 2012
    Publication date: April 26, 2012
    Applicant: NOVELLUS SYSTEMS, INC.
    Inventors: Huatan Qiu, Woody Chung, Anirban Guha, David Cheung
  • Publication number: 20120070589
    Abstract: A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively.
    Type: Application
    Filed: September 1, 2011
    Publication date: March 22, 2012
    Inventors: Liqi Wu, Ishtak Karim, Huatan Qiu, Kie-Jin Park, Chunming Zhou, Karthik Colinjivadi
  • Patent number: 8110068
    Abstract: Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.
    Type: Grant
    Filed: March 20, 2008
    Date of Patent: February 7, 2012
    Assignee: Novellus Systems, Inc.
    Inventors: Huatan Qiu, Woody Chung, Anirban Guha, David Cheung
  • Publication number: 20090250334
    Abstract: Systems and methods of forming plasma are provided. In an embodiment, a plasma generator system is provided including a container, a single coil disposed around the container, the single coil being a single member and having a first end, a second end, a first winding, and a second winding, wherein the first winding extends from the first end, and the second winding is integrally formed as part of the first winding and extends to the second end, an energy source electrically coupled directly to the first end of the single member, and a capacitor electrically coupled directly to the second end of the single member.
    Type: Application
    Filed: April 3, 2008
    Publication date: October 8, 2009
    Applicant: NOVELLUS SYSTEMS, INC.
    Inventors: Huatan Qiu, David Cheung, Prashanth Kothnur