Patents by Inventor Huazhi Li

Huazhi Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220202608
    Abstract: The present disclosure discloses a non-slip condom, including a sleeve body, where the sleeve body has an open end, a closed end, a male side, and a female side; no less than 5% of a bottom surface of the male side has a primary microstructure capable of increasing a surface area; and an area ratio of a total surface area per unit area of the bottom surface of the male side including the primary microstructure to the unit area is 1.05 to 565.00. The condom provided by the present disclosure can keep fit with a male penis during sexual intercourse to reduce the relative slip between the condom and the penis skin, and is not easy to wrinkle or slip off, thus reducing the mucosal injury and unreality sensation. Moreover, the condom helps to increase the consumers' willingness to use the condom and prevent sexually transmitted diseases (STDs).
    Type: Application
    Filed: April 23, 2020
    Publication date: June 30, 2022
    Inventors: Huazhi Li, Yongling Yuan, Zhijun Lu
  • Patent number: 8343580
    Abstract: Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.
    Type: Grant
    Filed: September 14, 2010
    Date of Patent: January 1, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Qing Min Wang, Deodatta Vinayak Shenai-Khatkhate, Huazhi Li
  • Patent number: 8012536
    Abstract: Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: September 6, 2011
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Huazhi Li, Qing Min Wang
  • Patent number: 7638645
    Abstract: Metal(IV) tetrakis(N,N?-dialkylamidinates) were synthesized and characterized. Exemplary metals include hafnium, zirconium, tantalum, niobium, tungsten, molybdenum, tin and uranium. These compounds are volatile, highly stable thermally, and suitable for vapor deposition of metals and their oxides, nitrides and other compounds.
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: December 29, 2009
    Assignee: President and Fellows of Harvard University
    Inventors: Roy G. Gordon, Jean-Sebastien Lehn, Huazhi Li
  • Publication number: 20080305260
    Abstract: Heteroleptic organometallic compounds containing at least one formamidinate ligand are provided. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.
    Type: Application
    Filed: June 5, 2008
    Publication date: December 11, 2008
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Huazhi Li, Qing Min Wang
  • Publication number: 20080003359
    Abstract: Metal(IV) tetrakis(N,N?-dialkylamidinates) were synthesized and characterized. Exemplary metals include hafnium, zirconium, tantalum, niobium, tungsten, molybdenum, tin and uranium. These compounds are volatile, highly stable thermally, and suitable for vapor deposition of metals and their oxides, nitrides and other compounds.
    Type: Application
    Filed: October 17, 2006
    Publication date: January 3, 2008
    Inventors: Roy G. Gordon, Jean-Sebastien Lehn, Huazhi Li