Patents by Inventor Hubert Moriceau

Hubert Moriceau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10755967
    Abstract: A method is provided, including successive steps of a) providing a donor substrate covered with a layer of oxide; b) implanting gaseous species in the donor substrate, through the layer to form an embrittlement zone, and at the end of step b), the layer has an absorbance peak with a maximum at a first wavenumber, and with a full width at half maximum; c) applying ultraviolet radiation to the free surface of the layer under an ozone atmosphere and according to a thermal budget for: shifting the maximum by at least 3 cm?1 towards increasing wavenumbers, reducing the full width at half maximum by at least 3 cm?1, and allowing direct adhesion with the free surface; d) assembling the donor substrate on the supporting substrate by direct adhesion with the free surface; and e) splitting the donor substrate along the embrittlement zone to expose a useful layer.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: August 25, 2020
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert Moriceau, Christophe Morales
  • Patent number: 10727106
    Abstract: This method comprises the successive steps of providing a donor substrate comprising a first surface; smoothing the first surface of the donor substrate until a reconstructed surface topology is obtained; forming a first dielectric film on the smoothed first surface of the donor substrate, in such a way that the first dielectric film has a surface that preserves the reconstructed surface topology; implanting gaseous species in the donor substrate, through the first dielectric film, so as to form an embrittlement zone, the useful layer being delimited by the embrittlement zone and by the first surface of the donor substrate; assembling the donor substrate on the supporting substrate by direct adhesion; and splitting the donor substrate along the embrittlement zone so as to expose the useful layer.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: July 28, 2020
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert Moriceau, Christophe Morales
  • Patent number: 10651032
    Abstract: The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: May 12, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert Moriceau, Matthew Charles, Christophe Morales
  • Patent number: 10586783
    Abstract: A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: March 10, 2020
    Assignees: Commissariat A L'Energie Atomique et aux Energies Alternatives, SOITEC
    Inventors: Hubert Moriceau, Bruno Imbert, Xavier Blot
  • Patent number: 10497609
    Abstract: A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: December 3, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank Fournel, Christophe Morales, Hubert Moriceau, Francois Rieutord
  • Patent number: 10483111
    Abstract: A method for assembling a first substrate and a second substrate by metal-metal direct bonding, includes providing a first layer of a metal at the surface of the first substrate and a second layer of the metal at the surface of the second substrate, the first and second metal layers having a tensile stress (?i) between 30% and 100% of the tensile yield strength (?e) of the metal; assembling the first and second substrates at a bonding interface by directly contacting the first and second tensile stressed metal layers; and subjecting the assembly of the first and second substrates to a stabilization annealing at a temperature lower than or equal to a temperature threshold beyond which the first and second tensile stressed metal layers are plastically compressively deformed.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: November 19, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Paul Gondcharton, Bruno Imbert, Hubert Moriceau
  • Publication number: 20190206721
    Abstract: A method is provided, including successive steps of a) providing a donor substrate covered with a layer of oxide; b) implanting gaseous species in the donor substrate, through the layer to form an embrittlement zone, and at the end of step b), the layer has an absorbance peak with a maximum at a first wavenumber, and with a full width at half maximum; c) applying ultraviolet radiation to the free surface of the layer under an ozone atmosphere and according to a thermal budget for: shifting the maximum by at least 3 cm?1 towards increasing wavenumbers, reducing the full width at half maximum by at least 3 cm?1, and allowing direct adhesion with the free surface; d) assembling the donor substrate on the supporting substrate by direct adhesion with the free surface; and e) splitting the donor substrate along the embrittlement zone to expose a useful layer.
    Type: Application
    Filed: December 19, 2018
    Publication date: July 4, 2019
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert MORICEAU, Christophe MORALES
  • Publication number: 20190206678
    Abstract: The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.
    Type: Application
    Filed: July 25, 2017
    Publication date: July 4, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert MORICEAU, Matthew CHARLES, Christophe MORALES
  • Publication number: 20190198385
    Abstract: This method comprises the successive steps of providing a donor substrate comprising a first surface; smoothing the first surface of the donor substrate until a reconstructed surface topology is obtained; forming a first dielectric film on the smoothed first surface of the donor substrate, in such a way that the first dielectric film has a surface that preserves the reconstructed surface topology; implanting gaseous species in the donor substrate, through the first dielectric film, so as to form an embrittlement zone, the useful layer being delimited by the embrittlement zone and by the first surface of the donor substrate; assembling the donor substrate on the supporting substrate by direct adhesion; and splitting the donor substrate along the embrittlement zone so as to expose the useful layer.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 27, 2019
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert MORICEAU, Christophe MORALES
  • Patent number: 10283364
    Abstract: The invention concerns an assembly method comprising the following steps: a) providing a first substrate comprising a first face made from crystalline indium phosphide, b) providing a second substrate comprising a second crystalline face different from the indium phosphide, c) forming an intermediate layer of crystalline indium phosphide on the second face of the second substrate, d) forming an assembly, via a direct bonding step, by bringing the first face of the first substrate into contact with the intermediate layer, the direct bonding step being carried out in an atmosphere having a pressure greater than 10?4 Pa, and preferably higher than 10?3 Pa, e) subjecting the assembly formed in step d) to heat treatment.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: May 7, 2019
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITEC
    Inventors: Bruno Imbert, Hubert Moriceau, Xavier Blot
  • Patent number: 10276738
    Abstract: A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.
    Type: Grant
    Filed: January 26, 2011
    Date of Patent: April 30, 2019
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Pierre Mur, Hubert Moriceau, Pierre-Jean Ribeyron
  • Publication number: 20180330950
    Abstract: The invention concerns an assembly method comprising the following steps: a) providing a first substrate comprising a first face made from crystalline indium phosphide, b) providing a second substrate comprising a second crystalline face different from the indium phosphide, c) forming an intermediate layer of crystalline indium phosphide on the second face of the second substrate, d) forming an assembly, via a direct bonding step, by bringing the first face of the first substrate into contact with the intermediate layer, the direct bonding step being carried out in an atmosphere having a pressure greater than 10?4 Pa, and preferably higher than 10?3 Pa, e) subjecting the assembly formed in step d) to heat treatment.
    Type: Application
    Filed: November 7, 2016
    Publication date: November 15, 2018
    Applicants: COMMISSARIA A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITEC
    Inventors: Bruno IMBERT, Hubert MORICEAU, Xavier BLOT
  • Patent number: 10100400
    Abstract: A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: October 16, 2018
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank Fournel, Hubert Moriceau, Marc Zussy
  • Publication number: 20180158719
    Abstract: A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.
    Type: Application
    Filed: May 10, 2016
    Publication date: June 7, 2018
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank FOURNEL, Christophe MORALES, Hubert MORICEAU, Francois RIEUTORD
  • Patent number: 9922953
    Abstract: A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.
    Type: Grant
    Filed: February 26, 2015
    Date of Patent: March 20, 2018
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Paul Gondcharton, Lamine Benaissa, Bruno Imbert, Hubert Moriceau
  • Patent number: 9922954
    Abstract: This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10?2 mbar.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: March 20, 2018
    Assignee: COMMISARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert Moriceau, Frank Fournel, Christophe Morales
  • Patent number: 9899217
    Abstract: A method is provided for producing a microelectronic device provided with different strained areas in a superficial layer of a semi-conductor on insulator type substrate, including amorphizing a region of the superficial layer and then a lateral recrystallization of the region from crystalline areas adjoining the region.
    Type: Grant
    Filed: November 28, 2014
    Date of Patent: February 20, 2018
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, STMICROELECTRONICS SA
    Inventors: Shay Reboh, Yves Morand, Hubert Moriceau
  • Publication number: 20180019124
    Abstract: A method for assembling a first substrate and a second substrate by metal-metal direct bonding, includes providing a first layer of a metal at the surface of the first substrate and a second layer of the metal at the surface of the second substrate, the first and second metal layers having a tensile stress (?i) between 30% and 100% of the tensile yield strength (?e) of the metal; assembling the first and second substrates at a bonding interface by directly contacting the first and second tensile stressed metal layers; and subjecting the assembly of the first and second substrates to a stabilization annealing at a temperature lower than or equal to a temperature threshold beyond which the first and second tensile stressed metal layers are plastically compressively deformed.
    Type: Application
    Filed: July 14, 2017
    Publication date: January 18, 2018
    Inventors: Paul GONDCHARTON, Bruno IMBERT, Hubert MORICEAU
  • Patent number: 9842742
    Abstract: A method for thinning samples including the steps of: a) providing at least one sample having a front and a rear face, b) providing a frame substrate having a first face and a second face opposite the first, including a through-opening which opens into the first and second face, which is configured to receive the sample, c) positioning the sample so it is disposed in the through-opening, the front face being oriented to the same side as the first face, and d) thinning the frame substrate and the sample simultaneously from the first face and the front face, respectively, so that at the end of thinning, the faces extend substantially in the same plane, the thinning being carried out using a grinder, the frame substrate and the sample being disposed on a rotary disk held in place by aspiration, the flanks of the sample remaining free during the thinning.
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: December 12, 2017
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jérôme Dechamp, Hubert Moriceau, Marc Zussy
  • Publication number: 20170179073
    Abstract: This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10?2 mbar.
    Type: Application
    Filed: December 22, 2016
    Publication date: June 22, 2017
    Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert MORICEAU, Frank FOURNEL, Christophe MORALES