Abstract: Herein is database query acceleration from dynamic discovery of whether contents of a persistent column can be stored in an accelerated representation in storage-side memory. In an embodiment, based on data type discovery, a storage server detects that column values in a persistent column have a particular data type. Based on storage-side metadata including a frequency of access of the persistent column as an offload input column for offload computation requests on a certain range of memory addresses, the storage server autonomously decides to generate and store, in storage-side memory in the storage server, an accelerated representation of the persistent column that is based on the particular data type. The storage server receives a request to perform an offload computation for the offload input column. Based on the accelerated representation of the persistent column, execution of the offload computation is accelerated.

Abstract: A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

Abstract: A semiconductor package structure includes a base material, at least one semiconductor chip, an encapsulant, a depression structure, a redistribution layer and at least one conductive via. The semiconductor chip is disposed on the base material. The encapsulant is disposed on the base material and covers the at least one semiconductor chip. The encapsulant has an outer side surface. The depression structure is disposed adjacent to and exposed from of the outer side surface the encapsulant. The redistribution layer is disposed on the encapsulant. The conductive via is disposed in the encapsulant and electrically connects the semiconductor chip and the redistribution layer.

Abstract: A semiconductor device package includes a metal carrier, a passive device, a conductive adhesive material, a dielectric layer and a conductive via. The metal carrier has a first conductive pad and a second conductive pad spaced apart from the first conductive pad. The first conductive pad and the second conductive pad define a space therebetween. The passive device is disposed on top surfaces of first conductive pad and the second conductive pad. The conductive adhesive material electrically connects a first conductive contact and a second conductive contact of the passive device to the first conductive pad and the second conductive pad respectively. The dielectric layer covers the metal carrier and the passive device and exposes a bottom surface of the first conductive pad and the second conductive pad. The conductive via extends within the dielectric layer and is electrically connected to the first conductive pad and/or the second conductive pad.

Abstract: A semiconductor package structure includes a base material, at least one semiconductor chip, an encapsulant, a depression structure, a redistribution layer and at least one conductive via. The semiconductor chip is disposed on the base material. The encapsulant is disposed on the base material and covers the at least one semiconductor chip. The encapsulant has an outer side surface. The depression structure is disposed adjacent to and exposed from of the outer side surface the encapsulant. The redistribution layer is disposed on the encapsulant. The conductive via is disposed in the encapsulant and electrically connects the semiconductor chip and the redistribution layer.

Abstract: A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

Abstract: A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

Abstract: A semiconductor device package includes: (1) a conductive base comprising a sidewall, a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth; (2) a semiconductor die disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface, the second surface of the semiconductor die bonded to the bottom surface of the cavity; and (3) a first insulating material covering the sidewall of the conductive base and extending to a bottom surface of the conductive base.

Abstract: A semiconductor device package includes a metal carrier, a passive device, a conductive adhesive material, a dielectric layer and a conductive via. The metal carrier has a first conductive pad and a second conductive pad spaced apart from the first conductive pad. The first conductive pad and the second conductive pad define a space therebetween. The passive device is disposed on top surfaces of first conductive pad and the second conductive pad. The conductive adhesive material electrically connects a first conductive contact and a second conductive contact of the passive device to the first conductive pad and the second conductive pad respectively. The dielectric layer covers the metal carrier and the passive device and exposes a bottom surface of the first conductive pad and the second conductive pad. The conductive via extends within the dielectric layer and is electrically connected to the first conductive pad and/or the second conductive pad.

Abstract: A semiconductor device package includes a metal carrier, a passive device, a conductive adhesive material, a dielectric layer and a conductive via. The metal carrier has a first conductive pad and a second conductive pad spaced apart from the first conductive pad. The first conductive pad and the second conductive pad define a space therebetween. The passive device is disposed on top surfaces of first conductive pad and the second conductive pad. The conductive adhesive material electrically connects a first conductive contact and a second conductive contact of the passive device to the first conductive pad and the second conductive pad respectively. The dielectric layer covers the metal carrier and the passive device and exposes a bottom surface of the first conductive pad and the second conductive pad. The conductive via extends within the dielectric layer and is electrically connected to the first conductive pad and/or the second conductive pad.

Abstract: A semiconductor device package includes a metal carrier, a passive device, a conductive adhesive material, a dielectric layer and a conductive via. The metal carrier has a first conductive pad and a second conductive pad spaced apart from the first conductive pad. The first conductive pad and the second conductive pad define a space therebetween. The passive device is disposed on top surfaces of first conductive pad and the second conductive pad. The conductive adhesive material electrically connects a first conductive contact and a second conductive contact of the passive device to the first conductive pad and the second conductive pad respectively. The dielectric layer covers the metal carrier and the passive device and exposes a bottom surface of the first conductive pad and the second conductive pad. The conductive via extends within the dielectric layer and is electrically connected to the first conductive pad and/or the second conductive pad.

Abstract: A semiconductor device package includes: (1) a conductive base comprising a sidewall, a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth; (2) a semiconductor die disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface, the second surface of the semiconductor die bonded to the bottom surface of the cavity; and (3) a first insulating material covering the sidewall of the conductive base and extending to a bottom surface of the conductive base.

Abstract: A semiconductor device package includes a conductive base, and a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth. A semiconductor die is disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface. The second surface of the semiconductor die is bonded to the bottom surface of the cavity. A distance between the first surface of the semiconductor die and the first surface of the conductive base is about 20% of the depth of the cavity.

Abstract: A semiconductor device package includes a first conductive base, a first semiconductor die, a dielectric layer, a first patterned conductive layer, and a second patterned conductive layer. The first conductive base defines a first cavity. The first semiconductor die is on a bottom surface of the first cavity. The dielectric layer covers the first semiconductor die, the first surface and the second surface of the first conductive base and fills the first cavity. The first patterned conductive layer is on a first surface of the dielectric layer. The second patterned conductive layer is on a second surface of the dielectric layer.

Abstract: A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

Abstract: A semiconductor device package includes a first conductive base, a first semiconductor die, a dielectric layer, a first patterned conductive layer, and a second patterned conductive layer. The first conductive base defines a first cavity. The first semiconductor die is on a bottom surface of the first cavity. The dielectric layer covers the first semiconductor die, the first surface and the second surface of the first conductive base and fills the first cavity. The first patterned conductive layer is on a first surface of the dielectric layer. The second patterned conductive layer is on a second surface of the dielectric layer.

Abstract: A semiconductor device package includes a conductive base, and a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth. A semiconductor die is disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface. The second surface of the semiconductor die is bonded to the bottom surface of the cavity. A distance between the first surface of the semiconductor die and the first surface of the conductive base is about 20% of the depth of the cavity.